5059H_ND12033E01

5059H series
32kHz output Crystal Oscillator Module ICs
OVERVIEW
The 5059H series are 32.768kHz output and 125°C operation crystal oscillator module ICs with divide-by-512 (or divide-by-1024)
frequency, AT-cut crystal 16.777216MHz (or 33.554432MHz) oscillator circuit built-in.
It is possible to generate a 32.768kHz output crystal oscillator with excellent temperature characteristics by using AT-cut crystal.
There are 3 pad layout package options available for optimized mounting, making these devices ideal for miniature crystal oscillators.
FEATURES
▪ Wide range of operating supply voltage: 1.6 to 5.5V
▪ Oscillation frequency(fundamental oscillator):16.777216MHz or 33.554432MHz
▪ Output frequency: 32.768kHz (oscillation frequency divided by 512 or 1024)
▪ -40 to +125°C operating temperature range
▪ Regulated voltage drive oscillator circuit for reduced power consumption
and crystal drive current
▪ 3 pad layout options for mounting
5059HAx : for Flip Chip Bonding
5059HBx : for Wire Bonding(Type I)
5059HCx : for Wire Bonding(Type II)
▪ Oscillation capacitors CG,CD built-in
▪ Standby function
High impedance in standby mode, oscillator stops
▪ Power-saving pull-up resistor built-in
▪ ±1mA output drive capability (Ta=-40 to +85°C)
±0.8mA output drive capability (Ta=-40 to +125°C)
▪ 50±5% output duty (1/2VDD)
▪ Wafer form (WF5059Hxx)
▪ Chip form (CF5059Hxx)
APPLICATIONS
▪ 32.768kHz output crystal oscillator modules
SERIES CONFIGURATION
Version*1
Oscillation frequency[MHz]
（fundamental oscillator）
Oscillation capacitors*2[pF]
CG
Output
frequency[kHz]
CD
5059HAA
5059HBA
16.777216
3
5059HAB
33.554432
2
Wire Bonding TypeⅠ
(fOSC/512)
5059HCA
5059HBB
Flip Chip Bonding
32.768
2
Wire Bonding TypeⅡ
Flip Chip Bonding
32.768
1
(fOSC/1024)
5059HCB
PAD layout
Wire Bonding TypeⅠ
Wire Bonding TypeⅡ
*1. It becomes WF5059Hxx in case of the wafer form and CF5059Hxx in case of the chip form.
*2. The oscillation capacitors do not contain parasitic capacitance.
ORDERING INFORMATION
Device
Package
WF5059Hxx-4
Wafer form
Version Name
WF5059H□□-4
Form WF:Wafer form
CF:Chip(Die) form
CF5059Hxx-4
Chip form
Oscillation frequency A:16.777216MHz
B:33.554432MHz
PAD layout
A:For Flip Chip Bonding
B:For Wire Bonding(Type I)
C:For Wire Bonding(Type II)
SEIKO NPC CORPORATION - 1
5059H series
PAD LAYOUT
▪ WF5059HAx
(For Flip Chip Bonding)
▪ CF5059HBx
(For Wire Bonding (Type I))
(375,345)
VSS
Y
INHN
5
4
(0,0)
6
1
(375,345)
Q
3
5
Q
Y
VDD
4
(0,0)
6
VDD
2
(-375,-345) XT
▪ CF5059HCx
(For Wire Bonding (Type II))
1
INHN
5
VDD
VSS
Y
4
(0,0)
6
INHN
2
(-375,-345) XTN
XTN
3
(375,345)
1
XTN
X
X
X
Chip size: 0.75×0.69mm
Chip size: 0.75×0.69mm
Chip size: 0.75×0.69mm
Chip thickness : 130m
Chip thickness : 130m
Chip thickness : 130m
PAD size : 80m
PAD size : 80m
PAD size : 80m
Chip base : Vss level
Chip base : Vss level
Chip base : Vss level
PAD COORDINATES
PAD
No.
VSS
2
(-375,-345) XT
XT
3
Q
PIN DESCRIPTION
PAD coordinates[μm]
PAD No.
Pin
Function
X
Y
5059HAx
5059HBx
5059HCx
1
-146
-235
1
2
1
XT
2
146
-235
2
1
2
XTN
Crystal is connected between XT and XTN.
3
265
-41
3
6
5
VDD
(+)supply voltage
4
265
186
4
5
4
Q
5
-265
186
5
4
3
VSS
6
-265
-41
6
3
6
INHN
Crystal connection pins.
Output(32.768kHz)
(-)ground
Input pin controlled output state(oscillator stops when
LOW),Power-saving pull-up resistor built-in
BLOCK DIAGRAM
INHN
VRG
RF
XT
DIVIDER
1/512
or
1/1024
RD
CG
CD
CMOS
Q
VDD
VSS
XTN
SEIKO NPC CORPORATION - 2
5059H series
SPECIFICATIONS
Absolute Maximum Ratings
Vss=0V
Parameter
Symbol
Condition
Rating
Unit
-0.3 to +7.0
V
Input pins
-0.3 to VDD+0.3
V
-0.3 to VDD+0.3
V
±3
mA
150
°C
-55 to +150
°C
*1
VDD
Between VDD and VSS
*1*2
VIN
Supply voltage range
Input voltage range
*1*2
Output voltage range
VOUT
Output pins
Output current*3
IOUT
Q pin
Junction temperature*3
Tj
*4
Storage temperature range
TSTG
Chip form, Wafer form
*1. This parameter rating is the values that must never exceed even for a moment. This product may suffer breakdown if this parameter rating is exceeded.
Operation and characteristics are guaranteed only when the product is operated at recommended operating conditions.
*2. VDD is a VDD value of recommended operating conditions.
*3. Do not exceed the absolute maximum ratings. If they are exceeded, a characteristic and reliability will be degraded.
*4. When stored in nitrogen or vacuum atmosphere applied to IC itself only (excluding packaging materials).
Recommended Operating Conditions
Vss=0V
Parameter
Symbol
Condition
Rating
MIN
TYP
5059HxA ver.
16.777216
5059HxB ver.
33.554432
Oscillator frequency
fOSC
VDD=1.6 to 5.5V
Output frequency
fOUT
VDD=1.6 to 5.5V, CLOUT=15pF
*1
MAX
Unit
MHz
32.768
kHz
Operating supply voltage
VDD
Between VDD and VSS
1.6
5.5
V
Input voltage
VIN
Input pins
VSS
VDD
V
Operating temperature
Ta
-40
+125
°C
Output load capacitance
CLOUT
15
pF
Q output
*1. Mount a ceramic chip capacitor that is larger than 0.01μF proximal to IC (within approximately 3mm) between VDD and VSS in order to obtain
stable operation of 5059H series. In addition, the wiring pattern between IC and capacitor should be as wide as possible.
Note. Since it may influence the reliability if it is used out of range of recommended operating conditions, this product should be used within this range.
SEIKO NPC CORPORATION - 3
5059H series
Electrical Characteristics
DC Characteristics
VDD=1.6 to 5.5V, VSS=0V, Ta= -40 to +125°C unless otherwise noted.
Parameter
Symbol
Q pin
HIGH-level output voltage
VOH
Q pin
LOW-level output voltage
VOL
INHN pin
HIGH-level input voltage
INHN pin
LOW-level input voltage
Q pin
Output leakage current
Measurement circuit 3, IOL=1mA, Ta=-40 to +85°C
Measurement circuit 3, IOH=0.8mA, Ta=-40 to +125°C
VIL
Measurement circuit 4
IZ
Measurement circuit 5,
INHN=“Low”
IDD1_2.5V
IDD1_1.8V
IＤＤ２_5.0V
IＤＤ２_3.3V
IＤＤ２_2.5V
IＤＤ２_1.8V
IDD3_5.0V
IDD3_3.3V
IDD3_2.5V
Current consumption
(HxB ver. : divide-by-1024
frequency output)
Measurement circuit 3, IOH=-0.8mA, Ta=-40 to +125°C
Measurement circuit 4
IDD1_3.3V
IDD3_1.8V
IＤＤ4_5.0V
IＤＤ4_3.3V
IＤＤ4_2.5V
IＤＤ4_1.8V
MIN
Measurement circuit 3, IOH=-1mA, Ta=-40 to +85°C
VIH
IDD1_5.0V
Current consumption
(HxA ver. : divide-by-512
frequency output)
Conditions
Measurement circuit 1,
INHN=“OPEN”,
output load=15pF,
fOSC=16.777216MHz,
fOUT=32.768kHz,
Ta=-40 to +125°C
Measurement circuit 1,
INHN=“OPEN”,
output load=15pF,
fOSC=16.777216MHz,
fOUT=32.768kHz,
Ta=-40 to +85°C
Measurement circuit 1,
INHN=“OPEN”,
output load=15pF,
fOSC=33.554432MHz,
fOUT=32.768kHz,
Ta=-40 to +125°C
Measurement circuit 1,
INHN=“OPEN”,
output load=15pF,
fOSC=33.554432MHz,
fOUT=32.768kHz,
Ta=-40 to +85°C
Rating
TYP
MAX
VDD-0.4
VDD
V
0
0.4
V
0.7VDD
V
0.3VDD
Q=VDD
Q=VSS
Unit
10
-10
VDD=5.0V
70
175
VDD=3.3V
65
163
VDD=2.5V
63
158
VDD=1.8V
60
150
VDD=5.0V
70
140
VDD=3.3V
65
130
VDD=2.5V
63
126
VDD=1.8V
60
120
VDD=5.0V
140
280
VDD=3.3V
130
260
VDD=2.5V
126
252
VDD=1.8V
120
240
VDD=5.0V
140
245
VDD=3.3V
130
228
VDD=2.5V
126
221
VDD=1.8V
120
210
Measurement circuit 1,INHN=“Low”,Ta=-40 to +85°C
10
Measurement circuit 1,INHN=“Low”,Ta=-40 to +125°C
20
V
A
A
A
A
A
A
Standby current
IST
INHN pin
pull-up resistance
RPU1
Measurement circuit 6
0.6
2
20
M
RPU2
Measurement circuit 6
50
100
200
k
150
300
600
k
Design value (a monitor pattern on a wafer is tested),
Excluding parasitic capacitance.
2.25
3.00
3.75
1.50
2.00
2.50
Design value (a monitor pattern on a wafer is tested),
Excluding parasitic capacitance.
1.50
2.00
2.50
0.75
1.00
1.25
Oscillator feedback resistance
Rf
Oscillator capacitance
(HxA ver. : divide-by-512
frequency output)
Oscillator capacitance
(HxB ver. : divide-by-1024
frequency output)
CG
CD
CG
CD
pF
pF
SEIKO NPC CORPORATION - 4
5059H series
AC Characteristics
VDD=1.6 to 5.5V, VSS=0V, Ta=-40 to +125°C unless otherwise noted
Parameter
Rating
Conditions
Symbol
MIN
TYP
MAX
Unit
Q pin
Output rise time
tr
Measurement circuit 1, CLOUT=15pF,
0.1VDD  0.9VDD
50
200
ns
Q pin
Output fall time
tf
Measurement circuit 1, CLOUT=15pF,
0.9VDD  0.1VDD
50
200
ns
50
55
%
1
s
Q pin
Output duty cycle
DUTY
Q pin
Output disable delay time
tOD
Measurement circuit 1, Ta=25°C,
CLOUT=15pF
45
Measurement circuit 2, Ta=25°C, CLOUT≤15pF
Timing chart
0.9VD D
0.9VDD
Q
0.1VD D
DUTY measurement
voltage 0.5VDD
DUTY = Tw/T×100 (%)
0.1VD D
Tw
T
tr
tf
Figure 1.Output switching waveform
VDD
VIH
INHN
VIL
VSS
tOD
VDD
0.1V
0.5VDD
Q
VSS
0.1V
fOUT
Hi-Z
Low
fOUT
When INHN goes HIGH to LOW, the Q output becomes high impedance.
When INHN goes LOW to HIGH, the Q output goes LOW once and then becomes normal output operation after having detected oscillation signals.
Figure 2.Output disable and oscillation start timing chart
SEIKO NPC CORPORATION - 5
5059H series
FUNCTIONAL DESCRIPTION
INHN Function
Q output is stopped and becomes high impedance.
INHN
Q
Oscillator
HIGH(Open)
fOUT
Operating
LOW
Hi-Z
Stopped
Power Saving Pull-up Resistor
The INHN pin pull-up resistance changes its value to RPU1 or RPU2 in response to the input level (HIGH or LOW).
When INHN is tied to LOW level, the pull-up resistance becomes large (RPU1), thus reducing the current consumed by the resistance.
When INHN is left open circuit or tied to HIGH level, the pull-up resistance becomes small (RPU2), thus internal circuit of INHN becomes
HIGH level.
Consequently, the IC is less susceptible to the effects of noise, helping to avoid problems such as the output stopping suddenly.
Oscillation Detection Function
The 5059H series have an oscillation detection circuit.
The oscillation detection circuit disables the output until crystal oscillation becomes stable when oscillation circuit starts up. This function
avoids the abnormal oscillation in the initial power up and in a reactivation by INHN.
SEIKO NPC CORPORATION - 6
5059H series
MEASUREMENT CIRCUITS
MEASUREMENT CIRCUIT 1
Measurement Parameters : IDD, IST, DUTY, tr, tf
*AC characteristics observed on the Qpin
using an oscilloscope.
A
IDD,IST
VDD
0.1μF
X'tal
XT
SW1
Q
Parameter
XTN
INHN
VSS
SW1
SW2
IDD
ON
OFF
IST
ON or OFF
ON
DUTY, tr, tf
ON
OFF
CLOUT
(Including probe capacitance)
SW2
MEASUREMENT CIRCUIT 2
Measurement Parameters : tOD
0.1μF
VDD
X'tal
RL1=1kΩ
XT
Q
XTN
INHN
RL2=1kΩ
CLOUT
VSS
Function
Generator
(Including probe capacitance)
Input Signal:VDD→VSS
50Ω
MEASUREMENT CIRCUIT 3
Measurement Parameters : VOH, VOL
0.1μF
VDD
Signal
Generator
0.001μF
2kΩ
Q
XTN
50Ω
VOH
VOL
VSS
0.1μF
V
VS
XTN input signal:1Vp-p,sine wave
Q
ΔV
VOH
VS
VS adjusted so that ΔV=2k×IOH
Q
ΔV
VS
VOL
VS adjusted so that ΔV=2k×IOL
SEIKO NPC CORPORATION - 7
5059H series
MEASUREMENT CIRCUIT 4
Measurement Parameters : VIH, VIL
VDD
XT
X'tal
0.1μF
Q
XTN
INHN
VIH
VIL
VSS
V
VIH:VSS→VDD voltage that changes output state
VIL:VDD→VSS voltage that changes output state
MEASUREMENT CIRCUIT 5
Measurement Parameters : IZ
VDD
0.1μF
Q
INHN
VSS
A
VDD
or
VSS
IZ
MEASUREMENT CIRCUIT 6
Measurement Parameters : RPU1, RPU2
VDD
0.1μF
INHN
VIN
V
A
VSS
IPU
VDD
RPU1 = I
PU
VDD−0.7VDD
RPU2 =
IPU
※VIN=0V
※VIN=0.7VDD
SEIKO NPC CORPORATION - 8
5059H series
REFERENCE DATA
The following characteristics are measured using the crystal below. Note that the characteristics will vary with the crystal used.
Crystal used for measurement
Crystal parameters
Parameter
f0=16MHz
f0=32MHz
C0(pF)
R1(Ω)
1.1698
16.824
1.5927
13.476
L1
C1
R1
C0
Current Consumption
5059HxA I DD
(fosc=16MHz, T a=25℃ , CLOU T=15pF)
5059HxB I DD
(fosc=32MHz, T a=25℃ , CLOUT=15pF)
175
175
150
150
125
125
I D D [uA]
200
I D D [uA]
200
100
100
75
75
50
50
25
25
0
0
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V D D [V]
4.5
5.0
5.5
6.0
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V DD [V]
4.5
5.0
5.5
6.0
Negative Resistance
C0=0pF
C0=1pF
C0=2pF
5059HxA Negative Re sistance
(VDD=3.3V, C0=0～ 2pF, Ta=25℃ )
C0=0pF
C0=1pF
C0=2pF
0
-200
-200
-400
-400
Negative Resistance[Ω]
Negative Resistance[Ω]
0
5059Hx B Negative Resistance
(V DD =3.3V, C0=0～ 2pF, T a=25℃ )
-600
-800
-1000
-1200
-1400
-1600
-1800
-600
-800
-1000
-1200
-1400
-1600
-1800
-2000
-2000
0
10
20
30
40
Frequency[MHz]
50
60
0
10
20
30
40
50
60
Frequency[MHz]
The figures show the measurement result of the crystal equivalent circuit C0 capacitance, connected between the XT and XTN
pins. They were performed with Agilent 4396B using the NPC test jig.
They may vary in a measurement jig, and measurement environment.
SEIKO NPC CORPORATION - 9
5059H series
Frequency Deviation by Voltage
5059HxB Frequency deviation characteristics
(fout=32kHz, VDD=3.3V std., Ta=25℃ , CLOUT=15pF)
1.0
1.0
0.8
0.8
Frequency deviation[ppm]
Frequency deviation[ppm]
5059HxA Fre quency deviation characteristics
(fout=32kHz, V DD =3.3V std., T a=25℃ , CLOUT=15pF)
0.6
0.4
0.2
0.0
-0.2
-0.4
-0.6
-0.8
0.6
0.4
0.2
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.0
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V D D [V]
4.5
5.0
5.5
1.0
6.0
1.5
2.0
2.5
3.0
3.5 4.0
V DD [V]
4.5
5.0
5.5
6.0
4.5
5.0
5.5
6.0
Drive Level
5059HxB Drive level
(fosc=32MHz, Ta=25℃ )
5.0
5.0
4.5
4.5
4.0
4.0
3.5
3.5
Drive level[uW]
Drive level[uW]
5059HxA Drive level
(fosc=16MHz, T a=25℃ )
3.0
2.5
2.0
1.5
3.0
2.5
2.0
1.5
1.0
1.0
0.5
0.5
0.0
0.0
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V DD [V]
4.5
5.0
5.5
6.0
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V D D [V]
Output Waveform
5059HxA, VDD=3.3V, CLOUT=15pF, Ta=25°C
5059HxB, VDD=3.3V, CLOUT=15pF, Ta=25°C
SEIKO NPC CORPORATION - 10
5059H series
Please pay your attention to the following points at time of using the products shown in this document.
1. The products shown in this document (hereinafter ”Products”) are designed and manufactured to the generally accepted standards of
reliability as expected for use in general electronic and electrical equipment, such as personal equipment, machine tools and
measurement equipment. The Products are not designed and manufactured to be used in any other special equipment requiring
extremely high level of reliability and safety, such as aerospace equipment, nuclear power control equipment, medical equipment,
transportation equipment, disaster prevention equipment, security equipment. The Products are not designed and manufactured to be
used for the apparatus that exerts harmful influence on the human lives due to the defects, failure or malfunction of the Products.
If you wish to use the Products in that apparatus, please contact our sales section in advance.
In the event that the Products are used in such apparatus without our prior approval, we assume no responsibility whatsoever for any
damages resulting from the use of that apparatus.
2. NPC reserves the right to change the specifications of the Products in order to improve the characteristics or reliability thereof.
3. The information described in this document is presented only as a guide for using the Products. No responsibility is assumed by us for any
infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise
under any patents or other rights of the third parties. Then, we assume no responsibility whatsoever for any damages resulting from that
infringements.
4. The constant of each circuit shown in this document is described as an example, and it is not guaranteed about its value of the mass
production products.
5. In the case of that the Products in this document falls under the foreign exchange and foreign trade control law or other applicable laws and
regulations, approval of the export to be based on those laws and regulations are necessary. Customers are requested appropriately take
steps to obtain required permissions or approvals from appropriate government agencies.
SEIKO NPC CORPORATION
1-9-9, Hatchobori, Chuo-ku,
Tokyo 104-0032, Japan
Telephone: +81-3-5541-6501
Facsimile: +81-3-5541-6510
http://www.npc.co.jp/
Email:[email protected]
ND12033-E-01 2013.02
SEIKO NPC CORPORATION - 11