AOS Semiconductor Product Reliability Report AO4600/AO4600L, rev D Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com Mar 7, 2007 This AOS product reliability report summarizes the qualification result for AO4600. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO4600 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. V. Product Description Package information Environmental Stress Test Summary and Result Reliability Evaluation Quality Assurance Information I. Product Description: The AO4600 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Units Max p-channel Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±12 ±12 V ID 6.9 -5 5.8 -4.2 40 -30 2 2 1.44 1.44 -55 to 150 -55 to 150 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Power Dissipation IDM TA=25°C TA=70°C Junction and Storage Temperature Range PD TJ, TSTG A W °C Thermal Characteristics : n-channel and p-channel Parameter Maximum Junctionto-Ambient Maximum Junctionto-Ambient Maximum Junctionto-Lead Symbol t ≤ 10s SteadyState SteadyState RθJA RθJL Device Typ Max n-ch 48 62.5 n-ch 74 110 n-ch 35 40 Units °C/W II. Package Information: AO4600 AO4600L (Green Compound) Standard sub-micron Standard sub-micron low voltage N/P channel process low voltage N/P channel process Package Type 8 lead SOIC 8 lead SOIC Lead Frame Copper with Ag spot Copper with Ag spot Die Attach Silver epoxy Silver epoxy Bond wire 2 mils Au wire 2 mils Au wire Mold Material Epoxy resin with silica filler Epoxy resin with silica filler Filler% (Spherical/Flake) 90/10 100/0 Flammability Rating UL-94 V-0 UL-94 V-0 Backside Metallization Ti / Ni / Ag Ti / Ni / Ag Moisture Level Up to Level 1 * Up to Level 1* Process Note * based on info provided by assembler and mold compound supplier III. Result of Reliability Stress for AO4600 (Standard) & AO4600L (Green) Test Item Test Condition Time Point Solder Reflow Precondition Standard: 1hr PCT+3 cycle reflow@260°C Green: 168hr 85°C /85%RH+3 cycle reflow@260 °C Temp = 150°C, Vgs=100% of Vgsmax 0hr HTGB 168 / 500 hrs 1000 hrs Lot Attribution Standard: 83 lots Green: 29 lots 6 lots (Note A*) HTRB Temp = 150°C, Vds=80% of Vdsmax 168 / 500 hrs 1000 hrs 6 lots (Note A*) HAST Pressure Pot 130 +/- 2°C, 85%RH, 33.3 psi, Vgs = 80% of Vgs max 121°C, 29.7psi, RH=100% 100 hrs Standard: 81 lots Green: 16 lots Total Sample size 17380 pcs 492 pcs Number of Failures 0 0 77+5 pcs / lot 492 pcs 0 77+5 pcs / lot 5335 pcs 0 50+5 pcs / lot 96 hrs (Note B**) Standard: 83 lots Green: 20 lots 5665 pcs 0 50+5 pcs / lot Temperature Cycle -65°C to 150°C, air to air, 250 / 500 cycles (Note B**) Standard: 87 lots Green: 29 lots 6380 pcs 0 50+5 pcs / lot (Note B**) High Temperature Storage Temp = 150°C 500/1000hrs Standard: 24 lots Green: 0 lot 1968 pcs 77+5 pcs / lot (Note B**) 0 III. Result of Reliability Stress for AO4600 (Standard) & AO4600L (Green) Continues DPA Internal Vision Cross-section X-ray CSAM NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°C bake 150°C bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 245°C 5 sec 15 15 leads 0 Note A: The HTGB and HTRB reliability data presents total of available AO4600 and AO4600L burn-in data up to the published date. Note B: The pressure pot, temperature cycle, HAST and HTS reliability data for AO4600 and AO4600L comes from the AOS generic package qualification data. IV. Reliability Evaluation FIT rate (per billion): 9.9 MTTF = 11530 years In general,500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability group also routinely monitors the product reliability up to 1000 hr at and performs the necessary failure analysis on the units failed for reliability test(s). The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO4600). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)] = 1.83 x 109 / 2[(4×164) (168) (258) + (164) (500) (258) + (164) (1000) (258)] = 9.9 MTTF = 109 / FIT = 1.01 x 108hrs = 11530years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K V. Quality Assurance Information Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual. Guaranteed Outgoing Defect Rate: < 25 ppm Quality Sample Plan: conform to Mil-Std-105D