200327B.pdf

Application Note
A Wideband CATV Attenuator
Introduction
PI Attenuator Fundamentals
In cable TV line amplifiers and set-top applications, a variable
attenuator is used in front of an LNA as an AGC. Figure 1 shows
a block diagram of a typical transceiver used in a set-top box.
The attenuator’s purpose is to normalize the level of the high
dynamic range multichannel TV signal. The input signal level may
vary from 0 to 20 dBmV (-49 to -29 dBm) depending on the local
cable network layout and standards. Thus, the attenuator should
provide at least 20 dB of low distortion attenuation.
PIN diode designs are commonly used for matched broadband
applications, especially those covering low RF frequencies (to
5 MHz) through frequencies greater than 1 GHz. The most
popular circuits are the TEE, bridged TEE and PI configurations.
These designs use PIN diodes as current controlled RF resistors
whose resistance values are set by a DC control established by
an AGC loop.
Application note APN1003, A Wideband General-Purpose PIN
Diode Attenuator, describes a PI attenuator design using four
individually packaged SMP1307-011 PIN diodes with coverage
from 10 MHz to 3 GHz. This application note describes a
four-diode PI-type attenuator specifically designed for CATV
applications with coverage to 1 GHz. The benefits of this design
are the cost and space savings resulting from the SMP1320027, a single package, four PIN diode array configured as a PI
attenuator in a SOT-5 plastic package.
Figure 2 shows a basic PI attenuator that uses three PIN diodes.
It also shows the expressions that determine the resistor values
for each PIN diode as a function of attenuation.
RF
Input
D3 (RS3)
RF
Output
D1 (RS1)
D2 (RS2)
Figure 2. PI Attenuator
AGC
75 W
54-860 MHz
0...20 dBm V
LPF
HPF
Upstream
filter
LPF
20 dB
0 dBm V
1st Mixer
BPF
LNA
dB
2nd Mixer
1100 MHz
PLL
BPF
PLL
1154-1960 MHz
Upstream
45.75/44 MHz
PLL
Control
1145/1144 MHz
PLL
Control
Figure 1. Block Diagram of Typical Dual-Conversion Cable Transceiver
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200327 Rev. B • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • October 14, 2008
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Application Note • A Wideband CATV Attenuator
Figure 3 displays the value of PIN diode resistance for a 50 W PI
attenuator. Note that the minimum value for the shunt diodes, R1
and R2, is 50 W.
Diode Resistance (W)
10000
Figure 4 shows a PI attenuator that uses four PIN diodes and is
the subject of this application note. The benefit of the four-diode
circuit is that its symmetry allows for a simpler bias network and
a reduction of distortion due to cancellation of harmonic signals
resulting from the back-to-back configuration of the series
connected diodes.
1000
RS1 = RS2
RF
Input
D3 (RS3)
RF
Output
100
10
RS3
D1 (RS1)
D2 (RS2)
1
0.1
1
10
100
Attenuation (dB)
Figure 4. Four Diode PI Attenuator
Figure 3. Attenuation of PI Attenuators
D1–D4
SMP1307-027
CFB
RF
Input
D1
RF
Output
ITH
D3
D4
D2
IOUT = ITH + ISH - IRES
M
ISH
ISH
CB
LB
C1
IRES
PIN 1
PIN 3
RB
Leadframe
C2
IRES
LC1
PIN 2
Diode
Chip
Bond
Wire
LC2
PIN 4
PIN 5
Figure 5. SOT-5 Package Assembly Couplings
2
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Application Note • A Wideband CATV Attenuator
SOT-5 Package Assembly Model and
Feedthrough Compensation Circuitry
Figure 5 shows the model for the RF couplings that exist within
the fourdiode SOT-5 package. The effect of these couplings is
most noticeable at high attenuation where the series diodes,
D1 and D3, are in a high impedance state, and shunt diodes, D2
and D4, are in a low impedance state. The capacitive coupling
between the RF input and output, designated as CFB, is the
result of the diode junction capacitance (about 0.3 pF) and the
inter-terminal package capacitance (about 0.1–0.15 pF). This
results in a capacitance of approximately 0.4–0.45 pF. There is
also magnetic coupling between the shunt connected diodes,
caused by the proximity of bond wires and package leadframe
pads, shown as the transformer M. This provides a circulating
feed-through current path (Ish). Without compensating for these
internal couplings, the maximum isolation at 1 GHz was less than
25 dB, compared to greater than 40 dB achieved using separate
packaged diodes demonstrated in APN1003.
To improve the high-frequency isolation, a simple and robust
compensation circuit was developed, as shown in Figure 5. The
compensation circuit requires only one or possibly two additional components and uses existing parasitic components of
a PI attenuator. The series connected C1–LC1 and C2–LC2 are
the existing RF ground capacitors with their respective parasitic
inductors, LC1 and LC2. Since the values of C1 and C2 are usually
very large at the high-frequency end of the CATV band, they may
be neglected. Capacitor CB, a necessary addition for the compensation circuit to work, is represented with its parasitic inductance
LB. Resistor RB represents the loss of capacitors C1, C2, CB (about
0.6 W) which may be added to the compensation circuit if more
flatness at the high-frequency response is desired.
Compensation occurs when capacitors C1, C2, CB resonate with
LC1 and LC2 at a frequency near or above the highest frequency
of the band. As shown in Figure 5, a portion of the resonating
current component, Ires, flows in the opposite direction of the
feedthrough currents, Ith + Ish, resulting in cancellation when
balanced. Resistor RB may be used to regulate the depth and
flatness of the cancellation across the frequency range.
Attenuator Circuit Model
In the circuit in Figure 6, the PIN diode pairs X2/X4 and X1/X3 are
symmetrically biased from two DC sources. The reference DC
voltage source (5 V) provides adequate biasing to keep shunting
diodes X3 and X4 at approximately 75 W (for the 75 W system
analyzed in the case below) during “shut-down” of series diodes
X1 and X2. The values of biasing resistors SRL1, SRL2, SRL3, R1,
SRL5 and SRL4 were selected to provide minimum VSWR for the
whole range of the attenuation changes. Attenuation is controlled
by the control voltage source, Vctl, which ranges from 1 to 5 V.
This source supplies control current to the series diodes X1 and
X2 through the wideband high impedance ferrite inductor X5 (FBM
H4525, Taiyoyuden) and resistors SRL4, SRL5, and SRL6.
Capacitors SRLC5 and SRLC7 provide RF grounding for the shunt
diodes. The separation of the biasing path into two branches,
SRL1 and SRL2, reduces RF coupling between input and
output. This will affect maximum attenuation, especially at high
frequencies, due to the parasitic series inductances.
Capacitors C6 and C7 reflect the total effect of the 50 W SMA
coaxial connectors used on the test board.
The values of all biasing resistors were optimized for the best
SWR performance over the attenuation range. The values of SRL5
and SRL4 were kept as small as possible to ensure maximum
forward current for the series diodes X1 and X2 and high enough
not to affect insertion loss of the whole attenuator.
Capacitors C4 and C5 reflect the interterminal parasitic capacitive
interactions. The effect of magnetic coupling between shunting
branches was modeled with coupled microstrip lines CLIN1. Its
parameters were established empirically.
The compensation circuitry, consisting of capacitor CBAL (2 pF),
was optimized for the highest attenuation at the high end of the
band, while keeping frequency response reasonably smooth.
Lower values of CBAL improve flatness at the cost of less attenuation at the high-frequency range.
SMP1307 SPICE Model
The SMP1307-027 is a four-diode assembly specifically designed
for PI-type attenuator applications based on the SMP1307 die.
The SMP1307 is a silicon PIN diode with a thick I region (175
mm) and a long carrier lifetime (TL = 1.5 ms). This results in a
variable resistance device capable of attenuating frequencies
below 10 MHz with low distortion while providing high dynamic
range of resistance variation.
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Application Note • A Wideband CATV Attenuator
Figure 6. SMP1307 Model for Libra IV
The SPICE model for the SMP1307-011 varactor diode defined
for the Libra IV environment is shown in Figure 7, with a
description of the parameters employed. In this model, two
diodes were used to fit both the DC and RF properties of the PIN
diode. The built-in PIN diode model of Libra IV was used to model
behavior of RF resistance vs. DC current. The P-N junction diode
model was used to model DC voltage-current response. Both
diodes were connected in series to ensure the same current flow,
while the PN-junction diode was effectively RF short-circuited
with capacitor C2 = 1E11 pF. The portion of the RF resistance,
reflecting residual series resistance, was modeled with R2 = 2.2
W, which was shunted with the ideal inductor L1 = 1E19 nH to
avoid affecting DC performance. Capacitors CG, CP and inductor
L2 reflect junction and mounting properties of the SMP1307 die.
4
This is a linear model emulating the DC and RF properties of
the PIN diode when the signal frequency is higher than 0.0425
MHz. For more details on the properties of the PIN diode, see
Reference 1.
Tables 1 and 2 describe the model parameters. Default values
are shown that are appropriate for silicon PIN diodes that may be
used by the Libra IV simulator. Some built-in Libra IV PIN diode
values were not used. They are marked “not used” in the tables.
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Application Note • A Wideband CATV Attenuator
Figure 7. Libra IV CATV/Modem PIN Attenuator Model
Parameter
DescriptionUnitDefault
IS
Saturation current (not used)
A
1.9E-9
VI
I region forward bias voltage drop
V
0.08
UN
Electron mobility cm**2/(V*S) (not used)
cm**2/(V*S)
900
WI
I region width (not used)
M
1.2e-4
RR
I region reverse bias resistance W
4E5
CMIN
PIN punchthrough capacitance
F
0
TAU
Ambipolar lifetime within I region (not used)
S
1E-12
RS
Ohmic resistance
CJO
Zero-bias junction capacitance
VJ
Junction potential
M
KF
W
0
F
1.8E-15
V
1
Grading coefficient
-
1.01
Flicker noise coefficient (Not used)
-
0
AF
Flicker noise exponent (Not used)
-
1
FC
Coefficient for forward-bias depletion capacitance (not used)
-
0.5
FFE
Flicker noise frequency exponent (not used)
-
1
Table 1. Silicon PIN Diode Values in Libra IV (Assumed for SMP1307 Model)
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Application Note • A Wideband CATV Attenuator
Parameter
IS
DescriptionUnitDefault
Saturation current A
1.1E-8
RS
Series resistance
W
1.48
N
Emission coefficient (not used)
-
2.2
TT
Transit time (not used)
S
0
CJO
Zero-bias junction capacitance (not used)
F
0
VJ
Junction potential (not used)
V
1
M
Grading coefficient (not used)
-
0.5
EG
Energy gap (with XTI, helps define the dependence of IS on temperature)
EV
1.11
XTI
Saturation current temperature exponent (with EG, helps define the dependence of
IS on temperature)
-
3
KF
Flicker noise coefficient (not used)
-
0
AF
Flicker noise exponent (not used)
-
1
FC
Forward bias depletion capacitance coefficient (not used)
-
0.5
BV
Reverse breakdown voltage (not used)
V
Infinity
IBV
Current at reverse breakdown voltage (not used)
A
1e-3
ISR
Recombination current parameter (not used)
A
0
NR
Emission coefficient for ISR (not used)
-
0
IKF
High injection knee current (not used)
A
Infinity
NBV
Reverse breakdown ideality factor (not used)
-
1
IBVL
Low-level reverse breakdown knee current (not used)
A
0
NBVL
Low-level reverse breakdown ideality factor (not used)
-
1
TNOM
Nominal ambient temperature at which these model parameters were derived
ÞC
27
FFE
Flicker noise frequency exponent (not used)
1
Table 2. Silicon Diode Values in Libra IV (Assumed for SMP1307 Model)
10000
100
Measured
Simulated
10
Resistance (W)
Current (mA)
Measured
1
1000
Simulated
100
10
0.1
0.01
0.4
0.6
0.8
1.0
Voltage (V)
Figure 8a. DC Current-Voltage Response of SMP1307
1
0.01
0.1
1
10
100
Figure 8b. RF Resistance vs. Current for SMP1307
The model DC voltage-current response calculated by Libra IV
is shown in Figure 8a, with the measured data. It shows very
good compliance of our model’s DC properties with measured
results. Figure 8b shows internal RF resistance with the parasitic
capacitors CG, CP and inductor L2 unembedded.
6
1000
Current (mA)
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Application Note • A Wideband CATV Attenuator
The major difference between the 50 W and 75 W PCB design is
the width of the main throughline. A remarkable fact about this
design is that to minimize return loss of the attenuator at the higher
frequencies of the CATV band (especially in the lowest attenuation
modes), the width of the main throughline is made smaller than
required for the matching characteristic impedance of the input/
output system. Thus, the optimum width for the 50 W version is
about 1.5 mm (60 mils), and about 0.8 mm (32 mils) for the 75 W
version. The thinner lines introduce some inductance, which help
compensate for the miscellaneous parasitic capacitance resulting
from the numerous pads and discontinuities.
Attenuator Design, Materials, Layout and
Performance
Both 50 and 75 W versions of the four-diode PIN attenuator were
designed and tested. The schematic diagram is shown in Figure 9
with values for the 75 W design; the 50 W
design schematic differs only by the value of R5 (= 560 W).
The 50 W PCB layout shown in Figure 10a was designed for the
0402 size components, and the 75 W PCB layout shown in Figure
10b was designed for the 0805 size components. The boards are
made of standard FR4 material, 62 mil thick for both the 50 W
and 75 W versions.
Table 3 lists the bill of materials based on the 0402
size components.
D1–D4
SMP1307-027
R2
30
C1
22,000 pF
RF
Input
L1
FBM H4525
D1
R1
510
C2
22,000 pF
C6
22,000 pF
C5
22,000 pF
D3
D2
D4
C7
2 pF
R3
1k
R8
5.6 k
VTUNE
0–20 V
R7
0
R4
1k
R6
510
RF
Output
C4
22,000 pF
R5
1.5 k
C3
22,000 pF
VREF
5V
Figure 9. CATV/Modem PIN Attenuator Schematic Diagram (75 W Design)
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Application Note • A Wideband CATV Attenuator
Designator
Footprint
Manufacturer
C1
22,000 p
CM05CG223K10AB
0402
AVX/KYOCERA
C2
22,000 p
CM05CG223K10AB
0402
AVX/KYOCERA
C3
22,000 p
CM05CG223K10AB
0402
AVX/KYOCERA
C4
22,000 p
CM05CG223K10AB
0402
AVX/KYOCERA
C5
22,000 p
CM05CG223K10AB
0402
AVX/KYOCERA
C6
22,000 p
CM05CG223K10AB
0402
AVX/KYOCERA
C7
2 p
CM05CG2R0K10AB
0402
AVX/KYOCERA
D1–D4
SMP1307-027
SMP1307-027
SOT-5
Skyworks Solutions
L1
FBMH4525
FBMH4525_HM162NT
1810
TAIYO-YUDEN
R1
510
CR05-511J-T
0402
AVX
R2
30
CR05-300J-T
0402
AVX
R3
1 k
CR05-102J-T
0402
AVX
R4
1 k
CR05-102J-T
0402
AVX
R5
1.5 k
CR05-102J-T
0402
AVX
R6
510
CR05-511J-T
0402
AVX
R7
Optional
Optional
0402
AVX
R8
5.6 k
CR05-562J-T
0402
AVX
ValuePart Number
Table 3. Attenuator Bill of Materials
10a
10b
Figures 10a and 10b. PCB Layouts for 50 and 75 W CATV/Modem PIN Attenuator
The measured and simulated results are shown in Figures 11
through 13. Figures 11 and 12 show measured results and
simulated performances for the 50 W attenuator using 0402 size
components. Figure 13 shows measured results for the 75 W
attenuator using 0805 size components.
8
For attenuation less than 15 dB, shown in Figure 11, flatness
of ±1 dB up to 900 MHz was demonstrated. Attenuation starts
to increase faster at higher frequencies as the control voltage
drops below 1.5 V. This occurs partially due to the effect of the
correction circuit.
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Application Note • A Wideband CATV Attenuator
The correction circuit (C7/R7) for the 50 W design consisted of
C7 = 2 pF and R7 = 20 W. For the 75 W design, where C7 =
1.6 pF and R7 = 50 W, the effect was substantially subdued to
improve the frequency response smoothness. As a result, the
high-frequency insertion loss response in Figure 13 doesn’t show
the characteristic “dip” observed in Figures 11 and 12, where
the compensation circuit effect is much stronger. As a result, the
attenuation flatness stays within ±2 dB to the 30 dB range.
The input SWR shown in Figures 11 and 12 show some deterioration in the low-frequency area, which is the result of
optimization to benefit the higher frequency end. However, that
balance could be easily changed by trimming either the reference
voltage or the value of the resistor R5. In Figure 11, the SWR for
the 50 W attenuator was kept well below 1.6. The SWR for the
75 W attenuator was higher, but still below 2. The cause for the
75 W system degradation was the integrated effect of multiple
parasitic capacitances from the component’s pad placement,
biasing lines, etc. Also, reducing the overall transmission line
width to 0.8 mm would significantly improve the return loss
performance.
A comparison of the simulated and measured curves shows that
the model is able to accurately predict attenuator performance.
There is a discrepancy of approximately 0.1 V in the vicinity of
1 V control voltages. However, this uncertainty may be neglected
because in most CATV/modem set-top applications, the attenuator is part of a closed loop level control.
1.6
0
0V
-5
1.5
-15
5.0 V
-20
3.0 V
2.0 V
1.5 V
1.2 V
-25
1.1 V
-30
-35
0.9 V
1.4
SWR
Attenuation (dB)
-10
1.0 V
1.0 V
1.3
5.0 V
1.2
0.9 V
-40
3.0 V
1.1
-45
1.2 V
1.5 V
1.1 V
2.0 V
0V
1.0
-50
0.0
0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Frequency (GHz)
Frequency (GHz)
Figure 11. Measured Insertion Loss and SWR for 50 W Attenuator
1.6
0
-5
-10
-15
1.1 V
0V
0.9 V
1.4
-20
5.0 V
3.0 V
-25
-30
1.1 V
-35
1.0 V
-40
2.0 V
1.5 V
1.2 V
0.0
1.5 V
5.0 V
1.1
0V
-50
1.2 V
1.3
1.2
0.9 V
-45
SWR
Attenuation (dB)
1.0 V
1.5
3.0 V
1.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Frequency (GHz)
0.0
2.0 V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Frequency (GHz)
Figure 12. Simulated Insertion Loss and SWR for 50 W Attenuator
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Application Note • A Wideband CATV Attenuator
References
0
Attenuation (dB)
-5
1. Gerald Hiller, “Design with PIN Diodes,” Application Note,
Skyworks Solutions, Inc.
-10
-15
10.0 V
5.0 V
4.0 V
2.7 V
-20
2. Gerald Hiller, “Predict Intercept Points in PIN Diode Switches,”
Microwaves & RF, Dec. 1985.
1.9 V
1.5 V
-25
1.3 V
-30
3. Robert Caverly and Gerald Hiller, “Distortion in PIN Diode
Control Circuits,” IEEE Trans. Microwave Theory Tech.,
May 1987.
1.2 V
-35
1.134 V
1.000
4. Gerald Hiller and Peter Shveshkeyev, “A Wideband General
Purpose PIN Diode Attenuator,” Application Note, Skyworks
Solutions, Inc., 1999.
Figure 13. Measured Insertion Loss for 75 W Attenuator
5. Gerald Hiller and Peter Shveshkeyev “5.8 GHz Switch Using
Plastic Package PIN Diodes,” Application Note, Skyworks
Solutions, Inc., 1999.
-40
-45
0.010
0.100
Frequency (GHz)
Conclusions
A four-diode PI attenuator was designed and constructed in both
50 W and 75 W environments suitable for CATV service using
a single package, SMP1307-27 PIN diode array. The attenuator
performed with an attenuation range of greater than 25 dB and
with an insertion loss of below 3 dB. The measurements show
that for attenuation levels lower than 15 dB, a flatness of better
than ±1 dB to 900 MHz was recorded. This performance appears
to be consistent with most CATV set-top system requirements.
10
List of Available Documents
1. CATV/Modem PIN Attenuator Simulation Project Files for Libra IV.
2. CATV/Modem PIN Attenuator Circuit Schematic and PCB Layout
for Protel, EDA Client, 1998 Version.
3. CATV/Modem PIN Attenuator PCB Gerber Photo-plot Files.
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
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Application Note • A Wideband CATV Attenuator
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incorporated by reference.
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
200327 Rev. B • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • October 14, 2008
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