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AS5410
3D-Hall Absolute Linear Position
Sensor
General Description
The chip can measure magnetic field components in two
different orientation directions and converts the magnetic field
information into absolute position information. The AS5410
supports absolute linear position measurement applications.
Only a simple 2-pole magnet is required as the magnetic field
source.
Using two 3D-Hall cells allows both absolute as well as
differential 3D magnetic field measurement.
The differential measurement makes the AS5410 ideal for use
in rough industrial position sensing applications that include
not only dust, dirt or moisture but also unwanted magnetic
stray fields.
All the signal conditioning, including compensation of
temperature effects, linearization of the output is included in
the IC.
The absolute position information of the magnet is directly
accessible over a SPI interface and PWM output. A cycle
redundancy check (CRC) allows verification of the received
data.
The AS5410 is available in a 14-pin TSSOP package and is
qualified for an ambient temperature range from -40°C to
105°C.
It operates at a supply voltage of 3.3V ±10%.
Ordering Information and Content Guide appear at end of
datasheet.
ams Datasheet
[v2-04] 2015-Oct-07
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AS5410 − General Description
Key Benefits & Features
The benefits and features of AS5410, 3D-Hall Absolute Linear
Position Sensor are listed below:
Figure 1:
Added Value of Using AS5410
Benefits
Features
• High flexibility in magnet selection
• Wide magnetic input range
• Suppression against magnetic stray fields
• Dual 3D sensor pixel principle
• Flexibility in choice of interface
• SPI and PWM output
• Contactless position sensing
• Absolute linear position sensing
• Flexible mechanical arrangement of
magnet
• Flexible configuration registers
• External calculations of raw data
• Bx and Bz raw data assessment possible
• High linearity after teaching
• 33 linearization points to achieve high precision
• Ideal for applications in harsh
environments
• Integrated diagnostic functions
• Temperature range from -40°C to 105°C (ambient)
Applications
AS5410 is ideal for:
• Plunger position
• Pedal position
• Pneumatic and hydraulic cylinder position
• Automation with linear position stages through cascading
of several AS5410 devices.
Figure 2:
AS5410 Linear Position Sensing of the Magnet
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ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − General Description
Block Diagram
The functional blocks of this device are shown below.
Figure 3:
AS5410 Block Diagram
VDD
Temperature
Sensor
Diagnostics
RESET_N
SPI
CS_N
SCK
MISO
MOSI
READY
PWM
PWM
E²PROM
3DHall
Cell
#0
X
3DHall
Cell
#1
X
Z
M
U
X
signal
conditioning
ADC
Bi
Bj
ATAN
(CORDIC)
State
Machine
Z
Linearization
Configuration
VSS
ams Datasheet
[v2-04] 2015-Oct-07
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AS5410 − General Description
3D Hall cells:
The AS5410 contains two 3D Hall cells, spaced 2.5mm apart.
MUX:
The multiplexer selects two magnetic field components Bx and Bz as the inputs
for the CORDIC. The selected inputs can either be absolute sensor signals or
differential sensor signals.
ADC:
The Sigma-Delta ADC samples the Hall sensors signals selected by the MUX. The
sampling of the sensors is done sequentially.
Signal conditioning:
This block includes offset and temperature compensation as well as amplitude
matching.
Bi/Bj values:
This block represents the registers containing the input sensor signals of the
CORDIC inputs.
ATAN:
Coordinate to Rotation Digital Computer: This block converts rectangular
coordinates (sine and cosine signals from the Hall sensors) into polar coordinates
(angle/distance and magnitude).
Linearization:
A 33-point linearization of the CORDIC output data is available to accommodate a
variety of different magnet sizes and applications.
Temperature sensor:
An on-chip temperature sensor is available. It can be read over the SPI interface.
This sensor is also used for signal conditioning.
PWM interface:
The linearized measurement data is available over a single pin in the form of a
pulse width modulated (PWM) signal.
SPI interface:
A bi-directional SPI interface allows communication with the chip, including
reading measurement data, E²PROM contents or writing configuration data.
E²PROM:
The on-chip E²PROM contains the configuration data of the chip.
State machine:
The state machine (sequencer) controls the automatic sequencing of
measurements. Once it is configured for a certain measurement, the state
machine executes all necessary steps to perform a complete measurement cycle.
Configuration:
The configuration is pre-defined in the AS5410. Mode selection.
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ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Pin Assignment
Pin Assignment
Pin Diagram
Figure 4:
AS5410 Pin Configuration, TSSOP-14 Package (Top View)
3:0
&6B1
966
7(67
966
6&(
9''
6&.
AS5410
/2&.B1
7(67
5(6(7B1
026,
5($'<
0,62
Note(s) and/or Footnote(s):
1. X indicates the axis of lateral position measurement; z axis is perpendicular to the package surface
Pin Description
Figure 5:
Pin Description
Pin
TSSOP
Symbol
Type
1
PWM
DO
2
VSS2
S
Ground (0V) (1)
3
VSS1
S
Ground (0V)(1)
4
VDD
S
Positive supply voltage (3.0V to 3.6V)
5
LOCK_N
DI_ST
6
RESET_N
DIO_ST
7
READY
DO
8
MISO
DO_T
Master in / Slave out (SPI interface data output)
9
MOSI
DI_ST
Master out / Slave in (SPI interface data input)
10
TEST
DIO
ams Datasheet
[v2-04] 2015-Oct-07
Description
PWM output. The linearized output data is available on this pin.
Test pin, must be connected to VSS in normal operation
Reset input (active low) to be connected with open drain driver. In case
of output application leave open
Measurement ready signal is set high when a measurement cycle is
completed and the results in the output registers are valid
Must be connected to VSS.
Page 5
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AS5410 − Pin Assignment
Pin
TSSOP
Symbol
Type
11
SCK
DI_ST
SPI interface clock input (max. 1 MHz)
12
SCE
DI_ST
Test pin, must be connected to VSS in normal operation
13
TEST
DI_ST
Test pin, must be connected to VSS in normal operation
14
CS_N
DI_ST
Chip select (active low)
Description
Note(s) and/or Footnote(s):
1. Both VSS1 and VSS2 must be connected.
2. CS_N is active low and activates data transmission. If only a single device is used, CS_N may remain low for several commands, for
example while reading the output registers.
Abbreviations for Pin Types in Figure 5:
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DO
: Digital output
DIO
: Digital input & output
DI_ST
: Digital Schmitt-Trigger input
DO_T
: Digital output /tri-state
S
: Supply pin
DIO_ST
: Digital Schmitt-Trigger input & output
ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Electrical Characteristics
Electrical Characteristics
Absolute Maximum Ratings
Stresses beyond those listed in Absolute Maximum Ratings
may cause permanent damage to the device. These are stress
ratings only. Functional operation of the device at these or any
other conditions beyond those indicated in Operating
Conditions is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device
reliability.
Figure 6:
Absolute Maximum Ratings
Parameter
Min
DC supply voltage at pin VDD
Max
Unit
5
V
Comments
Input pin voltage
-0.3
VDD +0.3
V
Input current
(latchup immunity)
-100
100
mA
Norm: JEDEC 78
kV
Norm: MIL 883 E method 3015
150
°C
Min – 67°F; Max 257°F
260
°C
IPC/JEDEC J-Std-020 Lead finish
100% Sn “matte tin”
85
%
Electrostatic discharge
Storage temperature
±2
-55
Body temperature
Relative humidity
(non-condensing)
Moisture sensitivity level (MSL)
EEPROM read/write cycles
ams Datasheet
[v2-04] 2015-Oct-07
5
Represents a maximum floor time of
168h
3
100
cycles
Page 7
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AS5410 − Electrical Characteristics
Operating Conditions
Operating conditions: operating temperature = -40°C to 105°C,
VDD = 3.0-3.6V unless otherwise noted.
Figure 7:
Electrical Characteristics
Symbol
Parameter
VDD
Positive supply voltage
Isupp
Supply current
T AMB
Operating ambient temperature
Min
Typ
Max
Unit
3.0
3.3
3.6
V
15
-40
105
twu
2
Wake up time
twlp
200
Note
mA
Active operation,
continuous mode
°C
-40°F to 221°F
ms
From cold start
μs
From standby; see
Single Loop Mode
System Performance Specifications
Operating conditions: magnet placement as specified in
Figure 2, operating temperature = -40°C to 105°C,
VDD = 3.0V to 3.6V, unless otherwise noted.
Figure 8:
System Parameters
Symbol
Parameter
Min
Typ
Max
Unit
BIR_x
Magnetic Range X
±5 (1)
±60
mT
BIR_z
Magnetic Range Z
±5 (1)
±50
mT
Svar_x
Sensitivity Variation absolute X
±1.85(2)
%
Svar_z
Sensitivity Variation absolute Z
±1.05(2)
%
Sensitivity Ratio Drift X/Z
±1.00(3)
%
dSx/dSz
TS0
Sampling rate configuration 0(4)
1
1.08
ms
TS1
Sampling rate configuration 1(4)
2
2.15
ms
Note
Note(s) and/or Footnote(s):
1. Minimum condition is valid if both input components are above 5mT.
2. Maximum value of 1 sigma (static variation). Sensitivity variation absolute from part to part. Better performance can be reached
with linearization step at end of line.
3. Over temperature. Value in % (1 sigma).
4. Configurable in register 000Bh.
Page 8
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ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Electrical Characteristics
DC Characteristics for Digital Inputs and
Outputs
CMOS Schmitt-Trigger Inputs: LOCK_N, RESET_N, CLK,
MOSI, SCK, CS_N
Operating conditions: operating temperature = -40°C to 105°C,
VDD = 3.0V to 3.6V unless otherwise noted.
Figure 9:
CMOS Schmitt-Trigger Inputs
Symbol
VIH
VIL
Parameter
Min
Max
1.77
1.87
High level input voltage
Note
VDD = 3.0V
V
2.07
2.23
1.12
1.27
Low level input voltage
VDD = 3.6V
VDD = 3.0V
V
1.42
Iin
Unit
Input current
1.52
10
VDD = 3.6V
mA
for Vin >VDD (1)
Note(s) and/or Footnote(s):
1. Input pin voltages higher than VDD (e.g. 5V TTL levels) must be limited by a series resistor to ensure that the maximum input current
(Iin) is not exceeded.
CMOS Outputs: READY, MISO, PWM
Operating conditions: operating temperature = -40°C to 105°C,
VDD = 3.0V to 3.6V unless otherwise noted.
Figure 10:
CMOS Outputs: READY, MISO, PWM
Symbol
Parameter
VOH
Output high level
IOH
Output current, source
VOL
Output low level
IOL
Output current, sink
ams Datasheet
[v2-04] 2015-Oct-07
Min
Max
Unit
2.5
VDD
V
8
mA
0.4
V
8
mA
0
Note
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AS5410 − Electrical Characteristics
Power On Reset
Operating conditions: operating temperature = -40°C to 105°C
Figure 11:
Power On Reset
Symbol
Parameter
Min
Typ
Max
Unit
VON
Reset threshold; VDD level rising
1.4
2.38
2.97
V
VOFF
Reset threshold; VDD level falling
1.18
2.2
2.79
V
Tpwrmin
Minimum reset pulse duration
1.8
7.1
μs
Note
RESET_N
The RESET_N pin can work as an output to monitor the internal
power on reset signal (see Figure 12).
The RESET_N can also work as an input and trigger an internal
reset. While power on cycle is not finished, communication is
not allowed until the READY pin is high.
Figure 12:
Power On Reset
PWRN
10kO
Power On
Reset
RESET_N
RESN
Page 10
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Digital
Block
ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Electrical Characteristics
On-Chip Temperature Measurement
The AS5410 provides a linear on-chip temperature sensor which
is use for automatic compensation of sensitivity and offset drifts
for the Hall-In-One sensors.
The measured chip temperature is available in a register (0110h)
and can be used for monitoring purposes.
Operating conditions: operating temperature = -40°C to 105°C
Figure 13:
Temperature Sensor
Symbol
D temp
Restemp
Parameter
Min
Temperature signal at 25°
Resolution
ams Datasheet
[v2-04] 2015-Oct-07
Typ
Max
0
185
200
Unit
Note
LSB
210
LSB/K
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AS5410 − Detailed Description
Detailed Description
Power Modes
The AS5410 can be configured for two power modes:
• Continuous mode
• Single loop mode
Continuous Mode
In this mode, the AS5410 is always active. The chip continuously
updates the output registers. The completion of a new
measurement is signalled with pin READY.
Single Loop Mode
The AS5410 features an automatic power down mode. After
completion of a measurement, the chip automatically suspends
to standby. The SPI interface remains active. The control of this
mode is possible over register 000Eh (see Register Description).
A high on the Ready output indicates that a measurement is
completed. The AS5410 suspends to stand-by state after the
Ready output has been set.
Serial Interface (SPI)
The SPI interface provides data transfer between AS5410 and
the external microcontroller.
The minimum number of connections between microcontroller
and AS5410 is three:
1. MOSI: Master Out – Slave In; data transfer from
microcontroller to AS5410 (Write)
2. MISO: Master In – Slave Out; data transfer from AS5410
to microcontroller (Read)
3. SCK: Serial clock; Data is written and read with the rising
edge of SCK
Optionally, two further connections may be used:
1. CS_N: Chip select; this connection is mandatory when
multiple AS5410 devices are connected in parallel. In
electrically “noisy” environment it is recommended to
use the CS_N connection in order to maintain safe data
transfer.
For a single unit, this connection is optional as the data
transmission is synchronized automatically by the
number of SCK cycles. In this case it is recommended to
verify the synchronization by CRC, Data readback or
repeated reading and cross-checking of subsequent
measurements.
2. Ready: this output indicates when data is ready, it is
cleared by reading data from address 0100h or 0122h.
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ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Detailed Description
Figure 14:
Hardware Connection Between AS5410 and Microcontroller
mandatory
wiring
AS5410
MOSI
MOSI
MISO
MISO
SCK
SCK
CS_N
SS/
Ready
Ready
µC
optional wiring
Figure 15:
SPI Timing Diagram
The data bits sent to the chip via MOSI and the data bits received
from the chip via MISO are defined as follows (see also
Figure 15):
ams Datasheet
[v2-04] 2015-Oct-07
A15 … A00
: 16-bit register address
W15 … W00
: 16-bit write data (in write mode)
X15 … X00, Y15
: 16-bit read data or previous command
(depending on mode)
R15 … R0
: 16-bit read data in read mode or previous
data in write mode
Page 13
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AS5410 − Detailed Description
Figure 16:
SPI Timing
Symbol
fsck
Parameter
Min
SCK frequency
Typ
Max
Unit
1
MHz
tSCKhi
SCK pulse width HI
15
ns
tSCKlo
SCK pulse width LO
15
ns
tCSEs
CS_N enable setup time before SCK
10
ns
tCSEh
CS_N enable hold time after SCK
10
ns
tCSDs
CS_N disable setup time before
SCK
10
ns
tCSDh
CS_N disable hold time after SCK
10
ns
tMOSIs
MOSI setup time before SCK
10
ns
tMOSIh
MOSI hold time after SCK
10
ns
tMISOd
MISO delay after SCK
10
ns
tMISOEd
MISO enable delay after CS_N
10
ns
tMISOZd
MISO high Z delay after CS_N
10
ns
tOr
Output edge rise time
3
ns
tOf
Output edge fall time
3
ns
Page 14
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Note
ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Detailed Description
Data Transfer Between AS5410 and
Microcontroller
Data is transferred to the AS5410 via the MOSI pin
(Master Out – Slave In) with the rising edge of SCK.
Data is read from the AS5410 from the MISO pin (Master In –
Slave Out) with the rising edge of SCK.
The data format consists of data streams with 32 bit in length.
The first 16 bits define a 16-bit address and the subsequent 16
bits contain read or write data.
The MSB of the address word A<15> defines the direction of
data transfer:
A<15> = 0 READ; data transfer from AS5410 to microcontroller;
read measurement data
A<15> = 1 WRITE; data transfer from microcontroller to AS5410;
write configuration data
Figure 17:
Data Transfer Between AS5410 and Microcontroller
MOSI
„0" + 15-bit
address
MISO
„0" + 15-bit
address
„0" + 15-bit
address
Data 1
Data 2
Read mode
MOSI
MISO
„1" + 15-bit
address
Data 1
„1" + 15-bit
address
Data 2
Previous
Command
Data 1
Previous
Command
Write mode & readback
Read Mode
For reading a register, the 16-bit Read address (with A<15>=0)
is sent to the MOSI pin. After 16 SCK cycles, data of the specified
address is read from the MISO pin (see Figure 17). At the same
time, the new address may be clocked into the MOSI pin.
ams Datasheet
[v2-04] 2015-Oct-07
Page 15
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AS5410 − Detailed Description
Continuous Measurement
It is possible to continuously read data from the AS5410 even
if a new measurement is not yet finished. In this case, the last
measurement data will be read. As soon as a new measurement
is completed, it will be available at the SPI interface.
Write Mode and Readback
For additional safety and detection of communication errors,
the actual contents of a register may be read at the same time
as new data is written to this register.
In case of a Write command, the 16-bit Write address (with
A<15>=1) is sent to the MOSI pin. After 16 SCK cycles, data
following the address bits is written to the specified address via
MOSI in (see Figure 17) At the same time, the present data of
that register may be read from the MISO pin. Following the
16-bit of data (Data 1 in Figure 17), a new address may be
written to the AS5410. While the new address is written, the
address from the previous command is available at the MISO
output.
Checksum
To avoid reading errors, the IC calculates a Checksum at every
read cycle from the register content. The Checksum value is
built by an XOR operation of the previous Checksum value and
the read register content. The CRC is calculated every time a
register is read.
By choosing how often the Checksum is read and rechecked by
the master it is possible to adjust the communication speed and
safety level.
The Checksum value is stored in register 0108h (see Register
Description).
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ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Detailed Description
PWM Data Transmission
In addition to the SPI interface, the AS5410 offers a PWM output
that provides data transmission of the linearized output data
over a single wire. The base frequency of the PWM is the system
clock frequency, so one PWM digit always corresponds to
approx. 125ns. The PWM resolution is set by 3 bits
(PWMPreScale) which shift the 16 bit wide angle value by 0 to
7 digits.
The duty cycle of the PWM signal lies between 0% to 100%. In
case of an error, the duty cycle is 0%.
If register 0122h value increases the duty cycle decreases. If
register 0122h value decreases the duty cycle increases.
Figure 18:
Register 000Dh
Register
Access
000Dh:
PWM
settings
Bit
Function
Default
D15-10
PWMLimitHi <5:0>
0
PWM Limit High,
Limits the PWM duty cycle to a
maximum value
D9-4
PWMLimitLo <5:0>
0
PWM Limit Low,
Limits the PWM duty cycle to a
minimum value
D3
PWMEn
0
PWM Enable,
Enables the PWM output
D2-0
PWMPreScale <2:0>
0
PWM PreScale,
Sets PWM frequency and resolution
R/W
Note
Figure 19:
Single Pin Data Transmission Connection Diagram
VDD= 3.0 - 3.6V
100nF
AS5410
ams Datasheet
[v2-04] 2015-Oct-07
VDD
VDD
PWM
PWM
VSS
GND
µC
Page 17
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AS5410 − Detailed Description
Figure 20:
PWM Duty Cycle Information
PWM Duty Cycle
[%]
Register 122h
(Linear Angle) [LSB]
0
32767
50
0
100
-32768
Between 0% to 100% the duty cycle is linear to the Linear Angle.
PWM Enable: Must be set high to enable the PWM mode.
PWMPreScale0 to PWMPreScale3: The PWM resolution is set
by those 3 Bits.
Figure 21:
PWM Resolution
PWMPreScale0 to
PWMPreScale3
Resolution
(bit)
PWM (kHz)
000
16
0.122
001
15
0.244
010
14
0.488
011
13
0.977
100
12
1.953
101
11
3.906
110
10
7.813
111
9
15.63
PWMLimitHi5 to PWMLimitHi0: Limits the PWM duty cycle.
Figure 22:
PWM Upper Clamping Limits
Page 18
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Duty Cycle
PWMLimitHi0 to PWMLimitHi5
Minimum 50%
000000
Minimum 0%
111111
ams Datasheet
[v2-04] 2015-Oct-07
Between 0% to 50% the duty cycle limit is linear to the binary
values selected by PWMLimitHi5 to PWMLimitHi0.
The limits are clamping limits (by selecting limits the resolution
decreases).
PWMLimitLo5 to PWMLimitLo0: Limits the PWM duty cycle.
Figure 23:
PWM Lower Clamping Limits
Duty Cycle
PWMLimitLo0 to PWMLimitLo5
Maximum 50%
111111
Maximum 100%
000000
Between 50% to 100% the duty cycle limit is linear to the binary
values selected by PWMLimitLo5 to PWMLimitLo0. The limits
are clamping limits (by selecting limits the resolution
decreases).
Figure 24:
PWM Setting Example
Clamping Range
0% – 100% PWM
Duty Cycle
10% – 90% PWM
Duty Cycle
50% – 50% PWM
Duty Cycle
PWMLimitHi5
1
1
0
PWMLimitHi4
1
1
0
PWMLimitHi3
1
0
0
PWMLimitHi2
1
0
0
PWMLimitHi1
1
1
0
PWMLimitHi0
1
0
0
PWMLimitLo5
0
0
1
PWMLimitLo4
0
0
1
PWMLimitLo3
0
1
1
PWMLimitLo2
0
1
1
PWMLimitLo1
0
0
1
PWMLimitLo0
0
1
1
ams Datasheet
[v2-04] 2015-Oct-07
Page 19
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AS5410 − Register Description
The following registers can be addressed by the user via the SPI
interface. Each register is 16-bit wide.
Register Description
Registers not listed in the table below must not be modified
from their factory programmed setting.
Note(s): “r” are reserved bits, they must not be modified (unless
otherwise noted)
Register 000Bh
This register controls the sequencer
Figure 25:
Register 000Bh
Register
Access
Bit
Function
Default
D15
(MSB)
r
0
D14
r
0
D13
r
0
D12
r
0
D11
000Bh:
Sequencer
control
0
“Magnet Range Extension”
Enable the algorithm for an extended
position range.
1 = Magnet Range Extension enabled
0 = Magnet Range Extension disabled
“Coordinate System Selection”
1 = The sign of the Lin Ang
(Register 0122h) gets changed if MagDir
(Register 000Bh) = 1
0 = Lin Ang (Register 0122h) gets not
changed
D10
CoordSel
0
D9
r
0
D8
r
0
D7
Table
Select 0
0
D6
Table
Select 1
0
R/W
D5
Page 20
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MgRangExt
MagDir
Note
0
These bits allow the selection of 4
different operating modes, stored in 4
individual sequencer tables
This bit allows to switch the magnet
direction
MagDir = 0: North pole must point in +x
direction (pin 7 to pin1) Default/powerup
mode.
MagDir = 1: North pole must point in -x
direction (pin1 to pin7). Preferred
orientation to permit use of CoordSel bit.
ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Register Description
Register
Access
000Bh:
Sequencer
control
Bit
Function
Default
Note
D4
DiffMd
0
Differential mode:
0 = Absolute measurement of Hall cells,
1 = Differential measurement of Hall cells
D3
r
0
D2
r
0
R/W
D1
RdyHZ
0
D0
(LSB)
r
0
READY Tri-State:
0: The READY pin is always active. It must
NOT be connected in parallel
1: The READY output may be connected in
parallel. It is normally in high Z and only
active (high) if the IC is selected. (1)
Note(s) and/or Footnote(s):
1. A 10k pull down resistor is mandatory at the common READY signal line if RdyHz = 1.
Figure 26:
Possible Table Selection
Table 0
Table 1
Differential Mode
Table 2
Table 3
Absolute Pixel1
1kHz Sample Rate
0.5kHz Sample Rate
1kHz Sample Rate
0.5kHz Sample Rate
CORDIC
Input
Values
Pixelcell0, Bz0 = 0x112h
-Pixelcell1, Bz1 = 0x111h
Pixelcell0, Bx0 = 0x114h
-Pixelcell1, Bx1 = 0x113h
Pixelcell0, Bz0 = 0x112h
-Pixelcell1, Bz1 = 0x111h
Pixelcell0, Bx0 = 0x114h
-Pixelcell1, Bx1 = 0x113h
Pixelcell1, Bz1 = 0x111h
Pixelcell1, Bx1 = 0x113h
Pixelcell1, Bz1 = 0x111h
Pixelcell1, Bx1 = 0x113h
Register B
Settings
Table Select 1…
Table Select 0 = 00
(mandatory)
DiffMd = 1 (mandatory)
MgRangExt = 0 or 1
depending on
application
Table Select 1…
Table Select 0 = 01
(mandatory)
DiffMd = 1 (mandatory)
MgRangExt = 0 or 1
depending on
application
Table Select 1…
Table Select 0 = 10
(mandatory)
DiffMd = 0 (mandatory)
MgRangExt = 0
(mandatory)
ams Datasheet
[v2-04] 2015-Oct-07
Table Select 1…
Table Select 0 = 11
(mandatory)
DiffMd = 0 (mandatory)
MgRangExt = 0
(mandatory)
Page 21
Document Feedback
AS5410 − Register Description
Register 000Dh
Figure 27:
Register 000Dh
Register
Access
000Dh:
R/W
Bit
Function
Default
D15 (MSB)
PWMLimitHi 5
1
D14
PWMLimitHi 4
1
D13
PWMLimitHi 3
0
D12
PWMLimitHi 2
0
D11
PWMLimitHi 1
1
D10
PWMLimitHi 0
1
D9
PWMLimitLo 5
0
D8
PWMLimitLo 4
0
D7
PWMLimitLo 3
1
D6
PWMLimitLo 2
1
D5
PWMLimitLo 1
0
D4
PWMLimitLo 0
1
D3
PWMEn
0
D2
PWM PreScale 2
0
D1
PWM PreScale 1
1
D0 (LSB)
PWM PreScale 0
1
Note
PWM Limit High,
Limits the PWM duty cycle to a
maximum value
PWM Limit Low,
Limits the PWM duty cycle to a
minimum value
PWM Enable,
Enables the PWM output
PWM PreScale,
Sets PWM frequency and resolution
Register 000Eh
This register holds the sequencer control bits.
Figure 28:
Register 000Eh
Register
000Eh:
Sequencer
control
Access
R/W
Page 22
Document Feedback
Bit
Function
Default
D15 (MSB)
– D2
r
0
Note
D1
Seq
1
1 = Sequencer enabled
(to be set to activate the state
machine)
0 = Sequencer disabled
D0 (LSB)
SL
0
1 = Single loop mode enabled
0 = Single loop mode disabled
ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Register Description
Register 000Fh
This register holds the threshold and hysteresis of the CORDIC
magnitude value (see Register 0120h), at which the “Magnet
Lost” flag in register 0107h is set/cleared.
Figure 29:
Register 000Fh
Register
Access
000Fh:
Bit
Function
Default
D15 (MSB)
r
0
D14
r
0
D13
r
0
D12
r
0
D11
r
0
H2
Hyst
0
H1
Hyst
0
H0
Hyst
1
V7
MgnLostLmt
0
V6
MgnLostLmt
0
V5
MgnLostLmt
0
V4
MgnLostLmt
0
V3
MgnLostLmt
0
V2
MgnLostLmt
0
V1
MgnLostLmt
1
V0 (LSB)
MgnLostLmt
1
Note
Reserved
Hysteresis for “magnet lost”
R/W
Magnet lost threshold value
compared to register 0121h
Note(s) and/or Footnote(s):
1. V7 to V0: The minimum allowed Magnitude of CORDIC can be selected. The binary number, represented by V7 to V0 must be
multiplied with 64 to calculate the minimum allowed Magnitude of CORDIC.
ams Datasheet
[v2-04] 2015-Oct-07
Page 23
Document Feedback
AS5410 − Register Description
Figure 30:
Example: Select V0 and V1.
Binary
Decimal
V7
V6
V5
V4
V3
V2
V1
V0
0
0
0
0
0
0
1
1
3
The corresponding dual number to 00000011 is 3 this number
multiplied with 64 is the minimum allowed magnitude of
CORDIC.
64 * 3 = 192 = Threshold limit
If the magnitude of CORDIC turns under 192 the MagLost bit in
register 0107h will turn form 0 to 1.
H2…H0: The hysteresis around the minimum allowed
magnitude of CORDIC can be selected.
The hysteresis Hystd is calculated by the formula
(EQ1)
Hyst
: Hysteresis value in Register 000Fh
Hystd
: Decimal hysteresis value around the
minimum allowed magnitude of CORDIC
MgnLostLmt
: The threshold limit as calculated in the
example above.
1
Hystd = MgnLostLmt × -----------2 Hyst
Figure 31:
Example: Select H0
Binary
Decimal
(EQ2)
H2
H1
H0
0
0
1
1
1
1 = 192 × ----1- = 96
Hystd = MgnLostLmt × -----------2
2 Hyst
Now the MagLost bit in register 0107h will turn form 0 to 1 at a
magnitude of CORDIC value lower than 192. After the MagLost
bit is 0 it turns back to 1 at a value higher than 288, because
192 + 96 = 288.
Page 24
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ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Register Description
Register 0030h
E²PROM address
Figure 32:
Register 0030h
Register
Access
0030h:
E²PROM
address
Bit
Function
D15 (MSB)
A15
D14
A14
D13
A13
D12
A12
D11
A11
D10
A10
D9
A9
D8
A8
D7
A7
D6
A6
D5
A5
D4
A4
D3
A3
D2
A2
D1
A1
D0 (LSB)
A0
R/W
Note
To read/write E²PROM contents,
the selected E²PROM address must be specified in
this register.
The corresponding data is available in register 0031h.
For write operations, status bit ED in register 0107h
which indicates the completion of a write operation
must be verified before starting a new write cycle.
Writing 16 bits of data requires ~10ms
Note(s) and/or Footnote(s):
1. 1LSB=4mT.
ams Datasheet
[v2-04] 2015-Oct-07
Page 25
Document Feedback
AS5410 − Register Description
Register 0031h
E²PROM data
Figure 33:
Register 0031h
Register
0031h:
E²PROM
data
Access
Bit
Function
D15 (MSB)
D15
D14
D14
D13
D13
D12
D12
D11
D11
D10
D10
D9
D9
D8
D8
D7
D7
D6
D6
D5
D5
D4
D4
D3
D3
D2
D2
D1
D1
D0 (LSB)
D0
R/W
Page 26
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Note
This register holds the E²PROM contents of the
address selected in register 0030h
ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Register Description
Register 0032h
Figure 34:
Register 0032h
Register
Access
0032h:
Page WRITE
E²PROM
address
ams Datasheet
[v2-04] 2015-Oct-07
Bit
Function
D15 (MSB)
A15
D14
A14
D13
A13
D12
A12
D11
A11
D10
A10
D9
A9
D8
A8
D7
A7
D6
A6
D5
A5
D4
A4
D3
A3
D2
A2
D1
A1
D0 (LSB)
A0
R/W
Note
To page write E²PROM contents, the selected
E²PROM address must be specified in this register.
Page 27
Document Feedback
AS5410 − Register Description
Register 0033h
Figure 35:
Register 0033h
Register
Access
0033h:
Page WRITE
E²PROM data
Page 28
Document Feedback
Bit
Function
D15 (MSB)
D15
D14
D14
D13
D13
D12
D12
D11
D11
D10
D10
D9
D9
D8
D8
D7
D7
D6
D6
D5
D5
D4
D4
D3
D3
D2
D2
D1
D1
D0 (LSB)
D0
R/W
Note
To page write E²PROM contents, the E²PROM data
must be specified in this register.
ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Register Description
Register 0107h
Status register; this register holds various status flags
Figure 36:
Register 0107h
Register
Access
0107h:
Status
ams Datasheet
[v2-04] 2015-Oct-07
R
Bit
Function
Note
Indicates completion of a new measurement;
same function as the “Ready” output pin.
0 = calculation is in progress or chip not ready
1 = measurement completed, new measurement
data is stored in register 0110h-0114h and
0120h-0122h
D15 (MSB)
RDY
D14
MagLost
1 = Magnetic field values are too low for position
measurement; the threshold level can be selected at
Register 000Fh Bit D7 to D0
D13
CorrOvfl
Ambiguous angle correction overflow
D12
NormOvfl
Normalizing scale overflow
D11
SensOvfl
Overflow during sensitivity correction over
temperature
D10
RngWarn
ADC overflow
D9
HistWarn
Histogram failure during ADC operation
D8
CalcError
Or wired combination of RngWarn, HistWarn,
NormOvfl, SensOvfl
D7
D7
Reserved
D6
D6
Reserved
D5
D5
Reserved
D4
D4
Reserved
D3
D3
Reserved
D2
D2
Reserved
D1
MagDir
D0 (LSB)
ED
Detected or chosen orientation of magnet
E²PROM write cycle:
0 = E²PROM write cycle in progress
1= E²PROM write cycle completed
Page 29
Document Feedback
AS5410 − Register Description
Register 0108h
Cycle Redundancy Check (CRC):
Figure 37:
Register 0108h
Register
Access
0108h: CRC
Page 30
Document Feedback
Bit
Function
D15 (MSB)
CRC15
D14
CRC14
D13
CRC13
D12
CRC12
D11
CRC11
D10
CRC10
D9
CRC9
D8
CRC8
D7
CRC7
D6
CRC6
D5
CRC5
D4
CRC4
D3
CRC3
D2
CRC2
D1
CRC1
D0 (LSB)
CRC0
R
Note
Checksum reading check
ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Register Description
Register 0110h
On-chip temperature sensor
Figure 38:
Register 0110h
Register
Access
0110h:
Temperature
ams Datasheet
[v2-04] 2015-Oct-07
Bit
Function
D15 (MSB)
T15
D14
14
D13
T13
D12
T12
D11
T11
D10
T10
D9
T9
D8
T8
D7
T7
D6
T6
D5
T5
D4
T4
D3
T3
D2
T2
D1
T1
D0 (LSB)
T0
R
Note
On-chip temperature sensor
Temperature [°C] = (Register 0110h / 200) + 25
Page 31
Document Feedback
AS5410 − Register Description
Register 0111h
Magnetic field of Pixel cell 1; Z field sensor cell
Figure 39:
Register 0111h
Register
Access
Bit
Function
Note
D15 (MSB)
D14
D13
D12
D11
D10
D9
0111h:
Magnetic
field value
D8
R
Bz1
D7
Magnetic field Bz of Pixel-cell 1
(1LSB=~4mT)
D6
D5
D4
D3
D2
D1
D0 (LSB)
Page 32
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ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Register Description
Register 0112h
Magnetic field of Pixel cell 0; Z field sensor cell
Figure 40:
Register 0112h
Register
Access
Bit
Function
Note
D15 (MSB)
D14
D13
D12
D11
D10
D9
0112h: Magnetic
field value
D8
R
Bz0
D7
Magnetic field Bz of Pixel-cell 0
(1LSB=~4mT)
D6
D5
D4
D3
D2
D1
D0 (LSB)
ams Datasheet
[v2-04] 2015-Oct-07
Page 33
Document Feedback
AS5410 − Register Description
Register 0113h
Magnetic field of Pixel cell 1; X field sensor cell
Figure 41:
Register 0113h
Register
Access
Bit
Function
Note
D15 (MSB)
D14
D13
D12
D11
D10
D9
0113h: Magnetic
field value
D8
R
Bx1
D7
Magnetic field Bx of Pixel-cell 1
(1LSB=~4mT)
D6
D5
D4
D3
D2
D1
D0 (LSB)
Page 34
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ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Register Description
Register 0114h
Magnetic field of Pixel cell 0; X field sensor cell
Figure 42:
Register 0114h
Register
Access
Bit
Function
Note
D15 (MSB)
D14
D13
D12
D11
D10
D9
0114h: Magnetic
field value
D8
R
Bx0
D7
Magnetic field Bx of Pixel-cell 0
(1LSB=~4mT)
D6
D5
D4
D3
D2
D1
D0 (LSB)
ams Datasheet
[v2-04] 2015-Oct-07
Page 35
Document Feedback
AS5410 − Register Description
Register 0120h
CORDIC magnitude value; this is representing the strength of
the magnetic field, as calculated by the CORDIC.
These values may for example be used to check the magnet for
out-of-range conditions, or to issue a “weak magnetic field”
warning when the value gets below a certain threshold.
(EQ3)
0120h = 0.82338 × 0111h + 0113h
(EQ4)
0120h = 0.82338 × ( 0112h – 0111h ) + ( 0114h – 0113h )
2
2
2
2
Figure 43:
Register 0120h
Register
Access
Bit
Function
Note
D15 (MSB)
D14
D13
D12
D11
D10
Magnitude value of CORDIC
D9
D8
0120h: Magnitude
R
Mag
Calculation in absolute mode (DiffMd = 0)
See EQ 3
D7
D6
D5
Calculation in differential mode (DiffMd = 1)
See EQ 4
D4
D3
D2
D1
D0 (LSB)
Page 36
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ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Register Description
Register 0121h
CORDIC angle value; this is representing the (non-linearized)
angle or direction of the magnetic field, as calculated by the
CORDIC.
(EQ5)
360
Ang [ ° ] = --------------- × 0121h
65536
(EQ6)
576
Ang [ ° ] = --------------- × 0121h
65536
Figure 44:
Register 0121h
Register
Access
Bit
Function
Note
D15 (MSB)
D14
D13
D12
D11
D10
Ang [°]…angle value of CORDIC [°]
0121h … angle value of CORDIC [LSB]
D9
D8
0121h: Angle
R
Ang
MgRangExt = 0:
See EQ 5
D7
D6
MgRangExt = 1:
See EQ 6
D5
D4
D3
D2
D1
D0 (LSB)
ams Datasheet
[v2-04] 2015-Oct-07
Page 37
Document Feedback
AS5410 − Register Description
Register 0122h
This register holds the final, calculated and linearized position
information
(EQ7)
(EQ8)
360
LinAng [ ° ] = --------------- × 0122h
65536
576
LinAng [ ° ] = --------------- × 0122h
65536
Figure 45:
Register 0122h
Register
Access
Bit
Function
Note
D15 (MSB)
D14
D13
D12
D11
This register holds the linearized 16-bit position
information.
D10
LinAng [°]…linearized 16-bit position information [ °]
0121h … linearized 16-bit position information [LSB]
D9
0122h:
Position
D8
R
LinAng
D7
D6
D5
D4
MgRangExt = 0:
See EQ 7
MgRangExt = 1:
See EQ 8
D3
D2
D1
D0 (LSB)
Page 38
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ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Register Description
E²PROM
AS5410 is equipped with a 1kx8 E²PROM memory to store the
factory settings and the customer configuration data. The
device can be configured using the 4wire Serial Peripheral
Interface (SPI).
Figure 46:
E²PROM Memory Map
Address (hex)
E²PROM Location Name
000Bh
Sequencer control
000Dh
PWM configuration
000Fh
Magnet lost threshold and hysteresis
005Fh
Angle linearization Table entry 16
0060h
Angle linearization Table entry 0
0061h
Angle linearization Table entry 1
0062h
Angle linearization Table entry 2
0063h
Angle linearization Table entry 3
0064h
Angle linearization Table entry 4
0065h
Angle linearization Table entry 5
0066h
Angle linearization Table entry 6
0067h
Angle linearization Table entry 7
0068h
Angle linearization Table entry 8
0069h
Angle linearization Table entry 9
006Ah
Angle linearization Table entry 10
006Bh
Angle linearization Table entry 11
006Ch
Angle linearization Table entry 12
006Dh
Angle linearization Table entry 13
006Eh
Angle linearization Table entry 14
006Fh
Angle linearization Table entry 15
0070h
Angle linearization Table entry -16
0071h
Angle linearization Table entry -15
0072h
Angle linearization Table entry -14
0073h
Angle linearization Table entry -13
ams Datasheet
[v2-04] 2015-Oct-07
Notes
Applied to CORDIC
output
Page 39
Document Feedback
AS5410 − Register Description
Address (hex)
E²PROM Location Name
0074h
Angle linearization Table entry -12
0075h
Angle linearization Table entry -11
0076h
Angle linearization Table entry -10
0077h
Angle linearization Table entry -9
0078h
Angle linearization Table entry -8
0079h
Angle linearization Table entry -7
007Ah
Angle linearization Table entry -6
007Bh
Angle linearization Table entry -5
007Ch
Angle linearization Table entry -4
007Dh
Angle linearization Table entry -3
007Eh
Angle linearization Table entry -2
007Fh
Angle linearization Table entry -1
Notes
Applied to CORDIC
output
Note(s) and/or Footnote(s):
1. The Angle linearization points can be used to achieve higher precision at the angle output.
Page 40
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ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Register Description
E²PROM WRITE/READ
Figure 47:
E²PROM WRITE/READ Cycle
WRITE EEPROM
READ EEPROM
Disable sequencer by
setting Bit 1"Seq“ in
register 000Eh to 0.
Disable sequencer by
setting Bit 1 in register
000Eh to 0.
Write EEPROM address to
register 0030h
Write EEPROM address to
register 0030h
Write EEPROM data to
register 0031h
Read register 0031h to
read the value standing in
EEPROM data
ED = 0
Read register
0107h
Bit 0 „ED“
ED = 1
Reset AS5410 at pin
RESET_N
For reading from the E²PROM the E²PROM address is written to
register 0030h and the stored E²PROM data can be read from
register 0031h.
For writing to the E²PROM the E²PROM address is written to
register 0030h and the E²PROM data can be written to register
0031h. The write cycle is completed when the ED (E²PROM
Done) bit is set to 1.
ams Datasheet
[v2-04] 2015-Oct-07
Page 41
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AS5410 − Register Description
E²PROM Page WRITE
Figure 48:
Page E²PROM WRITE Cycle
Page WRITE EEPROM
Disable sequencer by setting
Bit 1"Seq“ in register 000Eh to
0.
Write EEPROM address + k to
register 0032h
Write EEPROM data + k to
register 0033h
k=k+1
k<7
k=7
Write EEPROM address + k to
register 0032h
Write EEPROM data + k to
register 0031h
Wait 10ms
ED = 0
Read register
0107h
Bit 0 „ED“
ED = 1
Reset AS5410 at pin
RESET_N
Page 42
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ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Register Description
Figure 49:
E²PROM Page Index
PAGE
ADDRESS
0
0000h-0007h
1
0008h-000Fh
2
0010h-0017h
…
…
64
01F8h-01FFh
In order to write E²PROM content faster it is possible to use page
WRITE. A page is 8 words of 16bit width tall and can be stored
in the E²PROM during one WRITE cycle.
For page writing to the E²PROM the first 7 E²PROM addresses of
one page are written to register 0032h and the appropriate
E²PROM data can be written to register 0033h. The 8 th EEPROM
address of the page is written to register 0032h and the
appropriate E²PROM data can be written to register 0031h.
(Note: First 7 th data parts are stored to the volatile memory.
Only a write to register 0031h initiates the load cycle and the
data is stored in the E²PROM.)
The write cycle is completed when the ED (E²PROM Done) bit is
set to 1.
ams Datasheet
[v2-04] 2015-Oct-07
Page 43
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AS5410 − Magnet Features
Magnet Features
Magnet Range Extension
If the magnet is far away from the sensor, the field vectors in
the sensor position can generate false angle information. By
exploiting the magnetic field behavior it is still possible to
calculate correct position information. As absolute field values
are used during this calculation external disturbance fields
must not exceed a maximum of approximately ten times the
terrestrial magnetic field. The position range extending
calculation method can be disabled if large disturbance fields
occur during operation.
MgRangExt = 0: Angles between -180° and +180° can be
measured
MgRangExt = 1: Angles between -288° and +288° can be
measured
Figure 50:
Register 000Bh
Register
000Bh:
Sequencer
control
Access
Bit
Function
D11
MgRangExt
Note
“Magnet Range Extension”
Enable the algorithm for an extended position
range.
“Coordinate System Selection”
R/W
D10
CoordSel
1 = The sign of the LinAng (Register 0122h) gets
changed if MagDir (Register 000Bh) = 1
0 = LinAng (Register 0122h) gets not changed
Note(s) and/or Footnote(s):
1. Pins LOCK_N and SCE are test pins for factory testing. They must be connected to VSS in normal operation to prevent accidental
enabling of a test mode
2. Output READY is set high when a measurement cycle is completed and the results in the output registers are valid. It is cleared by
reading data from address 0100h or 0122h
3. CLK allows monitoring of the internal clock or applying an external clock.
4. Output MISO is only activated when CS_N is low. It is in high impedance state otherwise, this allows parallel operation of multiple ICs.
5. CS_N is active low and activates data transmission. If only a single device is used, CS_N may remain low for several commands, for
example while reading the output registers.
Page 44
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ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Application Information
Application Information
The AS5410 can be used in linear sensing applications.
Figure 51:
Reference Setup for Absolute Linear Displacement Measurement
side view: X-axis, TSSOP-14:
side view: Y-axis, TSSOP-14:
X
20mm
20mm
S
-X
N
top view, TSSOP14:
S
N
AS5401A
Pin 1 indicator
ams Datasheet
[v2-04] 2015-Oct-07
Page 45
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AS5410 − Application Information
Sensor Placement
Two pixel cells each with an X-/Z-Sensor are arranged in a line
on the X Axis parallel to the chip edge, 2.5mm distant from each
other. Pixel positions relative to chip centre are:
Pixel 0: -1250 μm
Pixel 1: 1250 μm
Figure 52:
Pixel Cell Arrangement
1.25mm
Tolerance:±0.235mm
3DHall
Pixel0
1.25mm
2.5mm
3DHall
Pixel1
1
Tolerance:±0.235mm
Page 46
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ams Datasheet
[v2-04] 2015-Oct-07
AS5410 − Package Drawings & Markings
Package Drawings & Markings
Figure 53:
Pixel Cell Placement
Note(s) and/or Footnote(s):
1. All dimensions in mm.
2. Die thickness 203μm nom.
3. Adhesive thickness 30 ± 15μm.
4. Leadframe downest 152 ± 25μm.
5. Leadframe thickness 125 ± 8μm.
ams Datasheet
[v2-04] 2015-Oct-07
Page 47
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AS5410 − Package Drawings & Mark ings
Figure 54:
14-Lead Thin Shrink Small Outline Package TSSOP-14
Symbol
Min
Typ
Max
Symbol
Min
Typ
A
A1
A2
b
c
D
E
E1
e
L
L1
0.05
0.80
0.19
0.09
4.90
1.00
5.00
6.40 BSC
4.40
0.65 BSC
0.60
1.00 REF
1.20
0.15
1.05
0.30
0.20
5.10
R
R1
S
Θ1
Θ2
Θ3
aaa
bbb
ccc
ddd
N
0.09
0.09
0.20
0°
12 REF
12 REF
0.10
0.10
0.05
0.20
14
4.30
0.45
4.50
0.75
-
Max
8°
-
RoHS
Green
Note(s) and/or Footnote(s):
1. Dimensioning and tolerancing conform to ASME Y14.5M-1994.
2. All dimensions are in millimeters (angles are in degrees).
3. N is the total number of terminals.
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AS5410 − Package Drawings & Markings
Figure 55:
AS5410 Marking
Figure 56:
Packaging Code: YYWWMZZ@
YY
WW
M
ZZ
@
Year
Manufacturing week
Plant identifier
Free choice/traceability code
Sublot identifier
ams Datasheet
[v2-04] 2015-Oct-07
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AS5410 − Ordering & Contact Information
Ordering & Contact Information
The devices are available as standard products, shown in
Figure 57.
Figure 57:
Ordering Information
Model
Package
Marking
Delivery Form
Delivery Quantity
AS5410-ZTST
TSSOP-14
AS5410
13" Tape & Reel in dry pack
4500
AS5410-ZTSM
TSSOP-14
AS5410
7" Tape & Reel in dry pack
500
Buy our products or get free samples online at:
www.ams.com/ICdirect
Technical Support is available at:
www.ams.com/Technical-Support
Provide feedback about this document at:
www.ams.com/Document-Feedback
For further information and requests, e-mail us at:
[email protected]
For sales offices, distributors and representatives, please visit:
www.ams.com/contact
Headquarters
ams AG
Tobelbaderstrasse 30
8141 Unterpremstaetten
Austria, Europe
Tel: +43 (0) 3136 500 0
Website: www.ams.com
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AS5410 − RoHS Compliant & ams Green Statement
RoHS Compliant & ams Green
Statement
RoHS: The term RoHS compliant means that ams AG products
fully comply with current RoHS directives. Our semiconductor
products do not contain any chemicals for all 6 substance
categories, including the requirement that lead not exceed
0.1% by weight in homogeneous materials. Where designed to
be soldered at high temperatures, RoHS compliant products are
suitable for use in specified lead-free processes.
ams Green (RoHS compliant and no Sb/Br): ams Green
defines that in addition to RoHS compliance, our products are
free of Bromine (Br) and Antimony (Sb) based flame retardants
(Br or Sb do not exceed 0.1% by weight in homogeneous
material).
Important Information: The information provided in this
statement represents ams AG knowledge and belief as of the
date that it is provided. ams AG bases its knowledge and belief
on information provided by third parties, and makes no
representation or warranty as to the accuracy of such
information. Efforts are underway to better integrate
information from third parties. ams AG has taken and continues
to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or
chemical analysis on incoming materials and chemicals. ams AG
and ams AG suppliers consider certain information to be
proprietary, and thus CAS numbers and other limited
information may not be available for release.
ams Datasheet
[v2-04] 2015-Oct-07
Page 51
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AS5410 − Copyrights & Disclaimer
Copyrights & Disclaimer
Copyright ams AG, Tobelbader Strasse 30, 8141
Unterpremstaetten, Austria-Europe. Trademarks Registered. All
rights reserved. The material herein may not be reproduced,
adapted, merged, translated, stored, or used without the prior
written consent of the copyright owner.
Devices sold by ams AG are covered by the warranty and patent
indemnification provisions appearing in its General Terms of
Trade. ams AG makes no warranty, express, statutory, implied,
or by description regarding the information set forth herein.
ams AG reserves the right to change specifications and prices
at any time and without notice. Therefore, prior to designing
this product into a system, it is necessary to check with ams AG
for current information. This product is intended for use in
commercial applications. Applications requiring extended
temperature range, unusual environmental requirements, or
high reliability applications, such as military, medical
life-support or life-sustaining equipment are specifically not
recommended without additional processing by ams AG for
each application. This product is provided by ams AG “AS IS”
and any express or implied warranties, including, but not
limited to the implied warranties of merchantability and fitness
for a particular purpose are disclaimed.
ams AG shall not be liable to recipient or any third party for any
damages, including but not limited to personal injury, property
damage, loss of profits, loss of use, interruption of business or
indirect, special, incidental or consequential damages, of any
kind, in connection with or arising out of the furnishing,
performance or use of the technical data herein. No obligation
or liability to recipient or any third party shall arise or flow out
of ams AG rendering of technical or other services.
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AS5410 − Document Status
Document Status
Document Status
Product Preview
Preliminary Datasheet
Datasheet
Datasheet (discontinued)
ams Datasheet
[v2-04] 2015-Oct-07
Product Status
Definition
Pre-Development
Information in this datasheet is based on product ideas in
the planning phase of development. All specifications are
design goals without any warranty and are subject to
change without notice
Pre-Production
Information in this datasheet is based on products in the
design, validation or qualification phase of development.
The performance and parameters shown in this document
are preliminary without any warranty and are subject to
change without notice
Production
Information in this datasheet is based on products in
ramp-up to full production or full production which
conform to specifications in accordance with the terms of
ams AG standard warranty as given in the General Terms of
Trade
Discontinued
Information in this datasheet is based on products which
conform to specifications in accordance with the terms of
ams AG standard warranty as given in the General Terms of
Trade, but these products have been superseded and
should not be used for new designs
Page 53
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AS5410 − Revision Information
Revision Information
Changes from 2.1 (2015-Aug-15) to current revision 2-04 (2015-Oct-07)
Page
2.1 (2015-Aug-15) to 2-01 (2015-Aug-28)
Content was updated to the latest ams design, altered content structure
Added figures 53 and 54
49
2-01 (2015-Aug-28) to 2-02 (2015-Sep-18)
Removed E²PROM Linearization Table 005Fh to 007Fh
Updated General Description section
1
Updated Pin Assignment section
5
Updated Electrical Characteristics section
7
Updated Figure 14
13
Updated Figure 17
15
Updated Figure 18
17
Updated Figure 19
17
Updated Figure 32 and added note under it
25
Added Registers 0032h and 0033h
27; 28
Updated Figure 39
32
Updated Figure 40
33
Updated Figure 41
34
Updated Figure 42
35
Added E²PROM section
39
2-02 (2015-Sep-18) to 2-03 (2015-Sep-30)
Updated Figure 6
7
2-03 (2015-Sep-30) to 2-04 (2015-Oct-07)
Updated Figure 15
13
Updated Figure 16
14
Updated Figure 19
17
Note(s) and/or Footnote(s):
1. Page and figure numbers for the previous version may differ from page and figure numbers in the current revision
2. Correction of typographical errors is not explicitly mentioned.
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AS5410 − Content Guide
Content Guide
ams Datasheet
[v2-04] 2015-Oct-07
1
2
2
3
General Description
Key Benefits & Features
Applications
Block Diagram
5
5
5
Pin Assignment
Pin Diagram
Pin Description
7
7
8
8
9
9
9
10
10
11
Electrical Characteristics
Absolute Maximum Ratings
Operating Conditions
System Performance Specifications
DC Characteristics for Digital Inputs and Outputs
CMOS Schmitt-Trigger Inputs: LOCK_N, RESET_N, CLK,
MOSI, SCK, CS_N
CMOS Outputs: READY, MISO, PWM
Power On Reset
RESET_N
On-Chip Temperature Measurement
12
12
12
12
12
15
15
16
16
16
17
Detailed Description
Power Modes
Continuous Mode
Single Loop Mode
Serial Interface (SPI)
Data Transfer Between AS5410 and Microcontroller
Read Mode
Continuous Measurement
Write Mode and Readback
Checksum
PWM Data Transmission
20
20
22
22
23
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
41
42
Register Description
Register 000Bh
Register 000Dh
Register 000Eh
Register 000Fh
Register 0030h
Register 0031h
Register 0032h
Register 0033h
Register 0107h
Register 0108h
Register 0110h
Register 0111h
Register 0112h
Register 0113h
Register 0114h
Register 0120h
Register 0121h
Register 0122h
E²PROM
E²PROM WRITE/READ
E²PROM Page WRITE
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AS5410 − Content Guide
Page 56
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44
44
Magnet Features
Magnet Range Extension
45
46
Application Information
Sensor Placement
47
50
51
52
53
54
Package Drawings & Markings
Ordering & Contact Information
RoHS Compliant & ams Green Statement
Copyrights & Disclaimer
Document Status
Revision Information
ams Datasheet
[v2-04] 2015-Oct-07