SAMWIN SW601Q N-channel SOT-23 MOSFET BVDSS : 600V SOT-23 Features ID 3 : 0.185A RDS(ON) : 700Ω ■ RDS(ON) (Max 700Ω)@VGS=0V,ID=3mA ■ High Switching Speed 1 3 2 2 1. Source 2. Gate 3. Drain General Description 1 The SW601Q is an N-channel power MOSFET using SAMWIN’s Advanced technology to provide the customers with high switching speed. Order Codes Item 1 Sales Type SW E 601Q Marking SW601Q Package SOT-23 Packaging REEL Absolute maximum ratings Symbol Parameter Value Unit VDSS Drain to Source Voltage (Note 2) 600 V VDGX Drain to Gate Voltage (Note 2) 600 V 0.185 A 0.740 A ± 20 V ID Continuous Drain Current IDM Drain current pulsed VGSS PD (@TC=25oC) Gate to Source Voltage Total power dissipation (@TC=25oC) 0.5 W TJ Junction Temperature + 150 oC TSTG, Storage Temperature -55 ~ + 150 oC Value Unit 250 oC/W Thermal characteristics Symbol Rthja Parameter Thermal resistance, Junction to ambient Notes: 1. Absolute maximum ratings are those valuesbeyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. TJ=+25°C~+150°C Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev. 1.0 1/4 SAMWIN SW601Q Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=-5V, ID=250uA ID(OFF) Drain to source leakage current VDS=600V, VGS=-5V 0.1 uA Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA -1.5 V IGSS 600 V On characteristics VGS(OFF) Gate to Source Cut Off Voltage VDS=3V, ID=8uA IDSS Drain to source leakage current VDS=25V, VGS=0V Drain to source on state resistance VGS=0V, ID = 3mA RDS(ON) -2.7 7 mA 330 700 Ω Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 4 td(on) Turn on delay time 40 tr td(off) tf Rising time Turn off delay time 15 VGS=0V, VDS=25V, f=1MHz 145 pF 20 VGS=-5~5V, VDD=30V, ID=5mA, RG=20Ω ns 45 Fall time 280 Qg Total gate charge 1300 Qgs Gate-source charge Qgd Gate-drain charge VGS=-5~5V, VDD=30V, ID=5mA 300 nC 45 Source to drain diode ratings characteristics Symbol VSD Parameter Diode forward voltage drop. Test conditions ISD=3mA, VGS=-10V Min. Typ. Max. Unit 1.4 V Notes: 1. Repetitive rating, pulse width limited by maximum junction temperature. 2. Pulse width≤380μs; duty cycle≤2%. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev. 1.0 2/4 SAMWIN Fig. 1. On-state characteristics Fig 3. Breakdown Voltage Variation vs. Junction Temperature SW601Q Fig. 2. transfer characteristics Fig. 4. On resistance variation vs. junction temperature Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev. 1.0 3/4 SAMWIN SW601Q Fig. 10. Gate charge test circuit & waveform VGS QG 10V VDS QGD QGS DUT VGS Charge nC Fig. 11. Switching time test circuit & waveform VDS RL 90% VDS RGS VDD VIN DUT 10% 10% VIN td(on) tf td(off) tr tON tOFF Fig. 13. Peak diode recovery dv/dt test circuit & waveform DU T + VDS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev. 1.0 4/4