STZ6.2N Diodes Zener diode STZ6.2N zExternal dimensions (Units : mm) zApplications Constant voltage control Noise suppression on signal line 1.1+0.2 −0.1 2.9±0.2 1.9±0.2 0.8±0.1 2.8±0.2 0~0.1 6B Week manufactured 0.4 +0.1 −0.05 0.15+0.1 −0.06 Each lead has same dimensions zConstruction Silicon epitaxial planar ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 zCircuit zAbsolute maximum ratings (Ta = 25°C) Parameter Power dissipation∗ Symbol Limits Unit P 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗Total of 2 elements zElectrical characteristics (Ta = 25°C) Parameter Zener voltage 0.3~0.6 zFeatures 1) Small surface mounting type. (SMD3) 2) Multiple diodes with common anode configuration. 3) High reliability. +0.2 1.6 −0.1 0.95 0.95 Symbol Min. Typ. Max. Unit VZ 5.81 − 6.40 V IZ=5mA Conditions Reverse current IR − − 1.00 µA VR=3.0V Operating resistance ZZ − − 60 Ω IZ=5mA Rising operating resistance ZZK − − 100 Ω IZ=0.5mA STZ6.2N Diodes zElectrical characteristic curves (Ta = 25°C) 300 POWER DISSIPATION : Pd (mW) ZENER CURRENT : IZ (A) 100m 10m 1m 100µ 10µ 1µ 100n 0 2 4 6 8 10 12 14 ZENER VOLTAGE : VZ (V) Fig. 1 Zener voltage characteristics 200 100 0 0 25 50 100 AMBIENT TEMPERATURE : Ta (°C) Fig. 2 Derating curve 150