200137H.pdf

data sheet
DSG9500-000: Planar Beam-Lead PIN Diode
Applications
l
Designed for switching applications
Features
Low capacitance
Low resistance
l Fast switching
l Oxide-nitride passivated
l Durable construction
l High voltage
l
Lead (Pb)-free, RoHS-compliant, and Green™
l
l
Absolute Maximum Ratings
Description
The DSG9500-000 silicon planar beam-lead PIN diode is designed
for low resistance, low capacitance and fast switching time.
The oxide-nitride passivation layers protect the diode junction to
provide excellent reliability and stable electrical performance,
especially when the diode is housed in a hermetically sealed
assembly to further protect the junction from moisture.
Operating temperature
-65 °C to +150 °C
Storage temperature -65 °C to +200 °C
The DSG9500-000 is designed for microstrip or stripline circuits
and for circuits requiring high isolation from a series-mounted
diode such as broadband multithrow switches, phase shifters,
limiters, attenuators and modulators.
NEW
Skyworks Green™ products are RoHS (Restriction
of Hazardous Substances)-compliant, conform to
the EIA/EICTA/JEITA Joint Industry Guide (JIG)
Level A guidelines, are halogen free according to
IEC-61249-2-21, and contain <1,000 ppm antimony
trioxide in polymeric materials.
Characteristic
Power dissipation (derate
linearly to zero @ 175 °C)
Value
250 mW
Typical lead strength
8 grams pull
Reverse voltage
100 V
Performance is guaranteed only under the conditions listed in the specifications table and is
not guaranteed under the full range(s) described by the Absolute Maximum Ratings. Exceeding
any of the absolute maximum/minimum specifications may result in permanent damage to the
device and will void the warranty.
CAUTION: A lthough these devices are designed to be robust, ESD
(Electrostatic Discharge) can cause permanent damage.
Static charges may easily produce potentials of several
kilovolts on the human body or equipment, which can
discharge without detection. Industry-standard ESD
precautions must be employed at all times.
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
200137 Rev. H • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • December 29, 2008
1
Data Sheet • DSG9500-000
Electrical Specifications
Part
Number
Voltage
Rating(1) (V)
CT
50 V, 1 MHz
(pF)
Max.
0.025
DSG9500-000
100
RSTL
RF Switching
50 mA, 100 MHz
IF = 10 mATime Outline
(Ω)
(ns)TS (ns)(2)Drawing
Max.Typ.Typ.
4
250
25
169-001
1. Reverse current is specified at 10 µA maximum at the voltage rating. This voltage should not be exceeded.
2. TS measured from RF transition, 90% to 10%, in series configuration.
Performance Data for DSG9500-000
38
SPDT isolation curves are shown in Figure 3, and insertion loss in
Figures 4 and 5. With proper transitions and bias circuits, VSWR
is better than 2.0 to 1 through 18 GHz.
36
32
28
Isolation (dB)
Figures 1 and 2 show a single pole double throw 1–18 GHz
switch. These diodes are mounted on Alumina, Duroid, or Teflon
fiberglass 50 Ω microstrip circuits. Typical bonding methods
include thermal compression bonding, parallel gap welding, and
soldering.
24
20
16
12
8
4
0
0
Switching Considerations
50 Ω
Transmission LIne
Figure 1. Typical SPDT Circuit Arrangement
8
10
12
14
16
18
2.5
50 Ω
Glass Bead
Connecting
Lead
6
Figure 3. Isolation vs. Frequency, sPdt
2.0
Insertion Loss (dB)
Duroid Substrate
4
Frequency (GHz)
The typical minority carrier lifetime of the DSG9500 diodes is
250 ns. With suitable drivers, the individual diodes can be
switched from high impedance (off) to low RS (on) in about 10 ns.
Beam-Lead Pin
2
1.5
1.0
0.5
0
0
10
50
100
Bias Current (mA)
Beam-Lead Pin
Metal Conductor
0.005"
Preferred BeamLead Orientation
Figure 4. diode Insertion Loss vs. Bias,
SPSt 18 Ghz
Duroid
Figure 2. Typical Beam-Lead Mounting
2
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
December 29, 2008 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • 200137 Rev. H
Data Sheet • DSG9500-000
100
Power Handling for DSG9500–000
1.4
Isolation Loss (dB)
1.2
1.0
80
Peak Power (W)
Beam-lead diodes are not suitable for high-power operation
because of high internal thermal impedance of about 600 °C/W.
60
40
20
0.8
0.6
0
0.4
10
50
100
Reverse Bias (V)
0.2
0
0
0
2
4
6
8
10
12
14
16
Figure 6. Peak Power handling,
SPSt 1 Ghz
18
Frequency (GHz)
Figure 5. diode Insertion Loss vs. Frequency,
sPst, IF = 50 ma
169-001
Cathode End Has
Blunted Point
0.004 (0.10 mm)
0.002 (0.05 mm)
0.007
(0.18 mm)
Max.
With maximum CW power dissipation of 250 mW, the
DSG9500-000 diodes are normally rated at 2 W incident CW
with linear derating between 25 °C and 150 °C.
For pulsed operation, the total RF plus bias voltage must not
exceed the rated breakdown. Skyworks has made high-power
tests at 1 GHz with 1 µs pulses, 0.001 duty, with 100 V diodes.
With 50 mA forward bias, there is no increase in insertion loss
over the 0 dBm level with a peak power input of 50 W. In the open
state, reverse bias voltage is required to minimize distortion, which
may decrease isolation and cause possible failure. Figure 6 shows
allowed peak power versus reverse bias at 1 GHz.
0.010
(0.25 mm)
Min.
0.011
(0.28 mm)
Max.
0.035 (0.89 mm)
0.033 (0.84 mm)
0.010
(0.25 mm)
Min.
0.004 (0.10 mm)
0.002 (0.05 mm)
0.0005
(0.013 mm)
Max.
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
200137 Rev. H • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • December 29, 2008
3
Data Sheet • DSG9500-000
Beam-Lead Diodes
Handling
Due to their small size, beam-lead devices are fragile and should
be handled with extreme care. The individual plastic packages should be handled and opened carefully, so that no undue
mechanical strain is applied to the packaged device. It is recommended that the beam-lead devices be handled through use of
a vacuum pencil using an appropriate size vacuum needle or a
pointed wooden stick such as a sharpened Q-tip or match stick.
The device will adhere to the point and can easily be removed
from the container and positioned accurately for bonding without
damage. Such handling should be done under a binocular microscope with magnification in the range of 20X to 30X.
Special handling precautions are also required to avoid electrical
damage, such as static discharge.
Bonding
The DSG9500-000 can best be bonded to substrates by means
of thermocompression bonding. Essentially this type of bonding
involves pressing the gold beam of the device against the goldplated metalized substrate under proper conditions of heat and
pressure so that a metallurgical bond joint between the two occurs.
Procedure
The beam-lead devices to be bonded should be placed on a
clean, hard surface such as a microscope slide. It is recommended that the beam side of the device be down so that this
side will be toward the substrate when bonded. The device can
be picked up by pressing lightly against one beam with the
heated tip. The substrate can then be appropriately positioned
under the tip and the device brought down against the substrate,
with proper pressure applied by means of the weld head.
A bonding tip temperature in the 350 °C to 450 °C range is recommended along with a bonding force of 50 to 70 grams. The
bonding time is in the range of 2 to 3 seconds. Optimum bonding
conditions should be determined by trial and error to compensate
for slight variations in the condition of the substrate, bonding tip,
and the type of device being bonded.
4
Equipment
The heat and pressure are obtained through use of a silicon
carbide bonding tip with a radius of two to three mils. Such an
item is available from several commercial sources. In order to
supply the required tip-travel and apply proper pressure, a standard miniature weld head can be used. Also available is a heated
wedge shank which is held by the weld head and in turn holds
the tip and supplies heat to it. The wedge shank is heated by
means of a simple AC power supply or a pulse-type heated tool.
Substrate
For optimum bonding, a gold-plated surface at least 100-microinches thick is necessary. Although it is possible to bond to
relatively soft metalized substrate material such as epoxy-fiberglass, etc., optimum bonding occurs when a hard material such
as ceramic can be used.
Quality
If a good bond has been obtained, it is impossible to separate the
beam-lead device from the metalized substrate without damage.
If the device is destructively removed, the beam will tear away,
leaving the bonded portion attached to the substrate.
Beam–Lead Packaging
The DSG9500-000 is shipped in 2” x 2” black gel packs. The
beam-leads are mounted on the gel, and the devices are covered
with a piece of lint-free release paper, on top of which is placed
a piece of conductive foam.
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
December 29, 2008 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • 200137 Rev. H
Data Sheet • DSG9500-000
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Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
200137 Rev. H • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • December 29, 2008
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