ROHM RFX10TF6S_11

Data Sheet
Super Fast Recovery Diode
RFX10TF6S
Dimensions (Unit : mm)
Series
Ultra Fast Recovery
Structure
+0.3
-0.1
+0.3
-0.1
+0.2
-0.1
Features
1)Single type.(TO-220)
2)High switching speed
3)Soft Recovery
RFX10
TF6S
(1)
(3)
1.6MAX
+0.4
-0.2
Applications
General rectification
(3)
(1)
+0.1
-0.05
Construction
Silicon epitaxial planer
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty  0.5
600
V
Reverse voltage
VR
Direct voltage
Average rectified forward current
Io
60Hz half sin wave, Resistance load, Tc=57C
600
10
V
A
Forward current surge peak
IFSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
100
A
Junction temperature
Storage temperature
Tj
Tstg
150
55 to 150
C
C
Electrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
IR
Reverse current
Reverse recovery time
Thermal Resistance
Conditions
Min.
Typ.
Max.
IF=10A
VR=600V
-
2
2.5
10
30
3.5
trr
IF=0.5A,IR=1A,Irr=0.25×IR
Rth(j-c)
junction to case
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1/3
0.15
16
-
Unit
V
A
ns
C / W
2011.06 - Rev.A
Data Sheet
RFX10TF6S
Electrical characteristics curves
100
1000000
Tj=150
10
Tj=25
Tj=75
1
10000
Tj=75C
1000
Tj=25C
100
10
0
1000
2000
3000
4000
0
5000
100
200
300
400
500
10
600
0
2000
1900
AVE : 1976mV
100
AVE : 140.3nA
10
220
AVE : 224.6pF
210
Ct DISPERSION MAP
1000
AVE : 163.5A
100
1cyc
IFSM
8.3ms
REVERSE RECOVERY TIME : trr(ns)
30
150
Tｊ=25C
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
25
20
15
10
AVE : 15.8ns
5
100
10
IFSM
8.3ms
1
1
10
time
100
8
6
AVE : 5.80kV
4
2
AVE : 1.08kV
0
10
1
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
10
C=100pF
R=1.5k
C=200pF
R=0
ESD DISPERSION MAP
2/3
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
IFSM
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISRESION MAP
1000
8.3ms
1cyc.
0
0
30
230
PEAK SURGE
FORWARD CURRENT : I FSM(A)
200
25
Ta=25C
f=1MHz
VR=0V
n=10pcs
240
IR DISPERSION MAP
VF DISPERSION MAP
20
200
1
1800
15
250
Tｊ=25C
VR=600V
n=20pcs
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
2100
REVERSE CURRENT : IR(nA)
Tｊ=25C
IF=10A
n=20pcs
50
10
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
1000
2300
2200
5
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
FORWARD VOLTAGE : V F(mV)
100
1
0.1
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT : I FSM(A)
f=1MHz
Tj=25C
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
100000
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(A)
Tj=125
1000
Tj=125C
Tj=150C
Rth(j-c)
1
0.1
0.001
0.01
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
2011.06 - Rev.A
45
40
D=0.8
35
D=0.5
half sin wave
D=0.2
25
D=0.1
20
D.C.
14
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
FORWARD POWER
DISSIPATION : Pf(W)
16
D.C.
30
Data Sheet
RFX10TF6S
D=0.05
15
10
5
Io
0V
VR
t
D=0.8
12
0A
D=t/T
VR=480V
T
D=0.5
Tj=150C
10
half sin wave
8
6
D=0.2
4
D=0.1
2
D=0.05
0
0
0
3
6
9
12
15
18
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
0
30
60
90
120
150
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
3/3
2011.06 - Rev.A
Notice
Notes
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R1120A