BRO376_09A.pdf

Applications
• Mixer and detector
Features
• Low capacitance for
usage beyond 40 GHz
• ZBD and low barrier
designs
• P-type and N-type
junctions
• Large bond pad chip
design
• Chip products are
Skyworks Green™
Silicon Schottky Diodes
Skyworks broad product portfolio includes Schottky diodes as packaged and bondable
silicon chips, in addition to ceramic hermetic, chip on board, beam-lead, flip chip and
plastic surface mount packaged devices for mixer or detector applications.
Skyworks series of Silicon Schottky diodes, CDB7619-000, CDB7620-000, CDB7630000, CDB7631-000, CDB7621-000 and CDB7623-000 are optimized for use as detector
and mixer diodes at frequencies from below 100 MHz to higher than 40 GHz. This family
of products includes low and “zero bias detector (ZBD)” barrier height Schottky junctions
with low junction capacitance and low series resistance. Schottky junctions are formed by
depositing specific metals on either n-type-doped silicon (low barrier height) or on p-typedoped silicon (low or ZBD barrier height). The characteristics of the diode are determined
by the type of metal deposited on the semiconductor material as well as the type of
dopant in the semiconductor layer, among other parameters
Skyworks “Universal Chip” design features a 4-mil-diameter bond pad that is offset from
the Schottky junction, preventing damage to the active junction that might occur as a
result of wire bonding.
Applications
As power-sensing detectors, these Schottky diode chips all have the same voltage
sensitivity so long as the output video impedance is much higher than the video
resistance of the diode. Figure 1 shows the expected detected voltage sensitivity
as a function of RF source impedance in an untuned circuit. Note that sensitivity is
substantially increased by transforming the source impedance from 50 W to higher values.
Maximum sensitivity occurs when the source impedance equals the video resistance. In
a detector circuit operating at zero bias, depending on the video load impedance, a ZBD
device with RV less than 10 kW may be more sensitive than a low-barrier diode with
RV greater than 100 kW. Applying forward bias reduces the diode video resistance as
shown in Figure 2. Lower video resistance also increases the video bandwidth but does
not increase voltage sensitivity, as shown in Figure 3. Biased Schottky diodes have better
temperature stability and also may be used in temperature compensated detector circuits.
P-type Schottky diodes generate lower 1/F noise and are preferred for Doppler mixers
and biased detector applications. The bond pad for the P-type Schottky diode is the
cathode. N-type Schottky diodes have lower parasitic resistance, RS, and will perform with
lower conversion loss in mixer circuits. The bond pad for the N-type Schottky diode is the
anode.
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Electrical Specifications at 25 °C
Barrier
ZBD
Junction Type
P
CJ(1)
(pF)
Max.
0.25
CDC7631-000
ZBD
P
0.15
80
150–300
2
7.2
571-006
CDB7619-000
Low
P
0.1
40
275–375
2
735
571-006
CDB7620-000
Low
P
0.15
30
250–350
2
537
571-006
CDF7621-000
Low
N
0.1
20
270–350
2
680
571-011
CDF7623-000
Low
N
0.3
10
240–300
2
245
571-011
Part Number
CDC7630-000
RT(2)
(W)
Max.
30
VF @ 1 mA (mV)
Min.–Max.
135–240
VB(3)
(V)
Min.
1
RV @ Zero Bias
(kW)
Typ.
5.5
Outline
Drawing
571-006
1. CJ for low barrier diodes specified at 0 V. CJ for ZBDs specified at 0.15 V reverse bias.
2. RT is the slope resistance at 10 mA. RS Max. may be calculated from: RS = RT - 2.6 x N.
3. VB for low barrier diodes is specified at 10 µA. VB for ZBDs is specified at 100 µA.
Typical Performance Data
10000
0 dBm
+10 dBm
1000
1000
Detected Voltage (mV)
Detected Voltage (mV)
10000
500 W
100
200 W
100 W
50 W
10
25 W
1
100
10
1
-20 dBm
-30 dBm
0.1
-10dBm
0.01
0.1
-40
-30
-20
-10
0
10
0.001
0.001
0.01
0.1
1
10
Forward Current (mA)
Input Power (dBm)
vs. Forward
FigureDetected
3. Detected Voltage
Voltage vs. Forward
Current
Detected
Voltage
vs.
Input
Figure
1. Detected
Voltage vs.
Input
Power and RF Source Impedance
Current
Power and RF Source Impedance
Video Resistance (W)
100000
RF Source
Impedance
Low Barrier
PINPUT
Detector
Voltage
RFC
10000
ZBD
Video Load
Impedance
Zero Biased Detector
1000
100
1
10
100
RF Source
Impedance
PINPUT
RFC
Forward Bias (µA)
Video Resistance vs.
Figure 2. Video Resistance vs. Forward Bias Current
Forward Bias Current
Biased Detector
Detector
Voltage
Video Load
Impedance
Outline Drawings
-203
571-006 (Cathode Bond Pad),
571-011 (Anode Bond Pad)
Schematic
N-Type
Cathode/Bonding Pad
Diameter 0.0035–0.0045
0.050 (1.27 mm)
0.040 (1.02 mm)
0.013 (0.33 mm)
0.011 (0.28 mm)
0.055 (1.40 mm)
0.051 (1.30 mm)
Dia.
247-001
-109
0.013 (0.33 mm)
0.011 (0.28 mm)
0.35 Max. Typ.
0.43 ± 0.05
0.0085 (0.216 mm)
0.0065 (0.165 mm)
Backside Contact (Andode)
Gold Metallization
0.60 Typ.
2
1
0.35 Max. Typ.
-108
Cathode
Pin 1 Indicator
0.35 Max. Typ.
0.45 ± 0.05 2 Plcs.
0.43 ± 0.05
Bottom View
Cathode
Indicator
1
0.60 Typ.
1.83 ± 0.10
2
1.00 (Max.)
Gold-Plated
Kovar Lid
0.35 Max. Typ.
1.43 ± 0.10
0.45 ± 0.05 2 Plcs.
XX
Bottom View
1
1.83 ± 0.10
1.43 ± 0.10
0.15 Typ.
2
1.00 (Max.)
Top View
Gold-Plated
Kovar Lid
XX
0.15 Typ.
Cathode Indicator
All dimensions in mm
Top View
Side View
586-011
All dimensions in mm
Side View
585-006
-207
0.064 (1.63 mm)
0.060 (1.52 mm)
Dia. 2 Plcs.
0.086 (2.18 mm)
Max. Dia.
Schematic
P-type
Schematic
N-type
Metal
Ceramic
0.200 (5.08 mm)
Nom.
0.076 (2.10 mm)
±0.006 (1.78 mm)
Metal
0.062 (1.63 mm)
±0.002 (1.52 mm)
2 Plcs
207-001
Application Notes
For additional information, please refer to the following Application Notes.
Diode Chips, Beam-Lead Diodes, Capacitors: Bonding Methods and Packaging
ESD Compliance Testing and Recommended Protection Circuits for GaAs Devices
Handling Precautions for Schottky Barrier Mixer and Detector Diodes
Mixer and Detector Diodes
Quality/Reliability
Green Initiative™
Through our Green Initiative,™ we are committed to manufacturing products that comply with global
government directives and industry requirements.
Skyworks is continuously innovating RF, analog and mixed-signal ICs. For the latest product introductions and
information about Skyworks, visit our Web site at www.skyworksinc.com
For additional information on our broad overall product portfolio, please contact your local sales office or email us at
[email protected]
Skyworks Solutions, Inc.
20 Sylvan Road, Woburn, MA 01801
USA: (781) 376-3000 • Asia: 886 2 2735 0399 x 990
Europe: 33 (0)1 41443660 • Fax: (781) 376-3100
Email: [email protected] • www.skyworksinc.com
BRO376-09A
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