Datasheet

AO4900
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AO4900 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further. Standard Product AO4900 is Pbfree (meets ROHS & Sony 259 specifications).
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 2.5V)
SCHOTTKY
VDS (V) = 30V, I F = 3A, [email protected]
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D2
S2/A
G2
S1
G1
1
2
3
4
D2/K
D2/K
D1
D1
8
7
6
5
K
A
G2
SOIC-8
S2
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain Current
Pulsed Drain Current
AF
TA=70°C
B
ID
IDM
VKA
Schottky reverse voltage
TA=25°C
Continuous Forward Current AF
Pulsed Forward Current
D1
TA=70°C
B
G1
S1
MOSFET
TA=70°C
Power Dissipation
Avalanche Current B
±12
6.9
V
5.8
A
40
IF
Repetitive avalanche energy 0.3mH
B
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
Thermal Characteristics Schottky
Steady-State
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
A
Steady-State
Alpha Omega Semiconductor, Ltd.
Steady-State
PD
Units
V
IFM
TA=25°C
Schottky
30
30
3
V
2
A
2
40
2
1.44
1.44
W
IAR
15
A
EAR
34
mJ
TJ, TSTG
-55 to 150
-55 to 150
°C
Typ
Max
Units
48
62.5
74
35
110
40
47.5
62.5
71
32
110
40
Symbol
RθJA
RθJL
RθJA
RθJL
°C/W
°C/W
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AO4900
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
30
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.7
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
25
TJ=55°C
5
100
nA
1.4
V
22.6
27
33
40
VGS=4.5V, ID=6.0A
27
32
mΩ
VGS=2.5V, ID=5A
42
50
mΩ
TJ=125°C
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=5A
12
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
A
16
0.71
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
µA
1
VGS=10V, ID=6.9A
Static Drain-Source On-Resistance
Max Units
V
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
846
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=6.9A
S
1
V
3
A
1050
pF
96
0.7
mΩ
pF
67
94
pF
1.4
2
Ω
9.6
12
nC
1.65
nC
Qgd
Gate Drain Charge
3
tD(on)
Turn-On DelayTime
3.2
4.8
ns
tr
Turn-On Rise Time
4.1
6.2
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery time
Qrr
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
nC
26.3
40
ns
3.7
5.5
ns
IF=5A, dI/dt=100A/µs
15.5
20
Body Diode Reverse Recovery charge IF=5A, dI/dt=100A/µs
7.9
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1.0A
0.45
0.007 0.05
Irm
VR=30V
VR=30V, TJ=125°C
Maximum reverse leakage current
VR=30V, TJ=150°C
CT
Junction Capacitance
VR=15V
ns
nC
0.5
3.2
10
12
37
20
V
mA
pF
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev4: Dec 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
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AO4900
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10V
3V
25
2.5V
15
ID(A)
ID (A)
20
VDS=5V
16
4.5V
10
VGS=2V
5
12
8
125°C
4
0
0
0
1
2
3
4
0
5
0.5
1.5
2
2.5
3
1.7
Normalized On-Resistance
60
VGS=2.5V
50
RDS(ON) (mΩ)
1
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
40
30
VGS=4.5V
20
VGS=10V
10
0
5
10
15
1.6
ID=5A
1.5
VGS=10V
VGS=4.5V
1.4
1.3
VGS=2.5V
1.2
1.1
1
0.9
0.8
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
100
150
200
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
1.0E+01
70
60
1.0E+00
ID=5A
1.0E-01
50
40
IS (A)
RDS(ON) (mΩ)
25°C
125°C
30
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
25°C
20
1.0E-05
1.0E-06
10
0
2
4
6
8
10
VGS (Volts)
Figure 5: On resistance vs. Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4900
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
5
VDS=15V
ID=6.9A
Capacitance (pF)
VGS (Volts)
4
f=1MHz
VGS=0V
1250
3
2
Ciss
1000
1
750
500
Coss
250
0
0
2
4
6
8
10
0
12
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
ID (A)
10ms
0.1s
1.0
15
20
25
30
TJ(Max)=150°C
TA=25°C
30
100µs
1ms
10
40
Power (W)
10.0
5
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
Crss
1s
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
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AO4900
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
250
10
f = 1MHz
125°C
Capacitance (pF)
IF (Amps)
1
200
0.1
0.01
150
100
50
25°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
0
VF (Volts)
Figure 12: Schottky Forward Characteristics
0.7
10
15
20
25
30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
100
0.6
IF=3A
Leakage Current (mA)
VF (Volts)
5
0.5
0.4
IF=1A
0.3
0.2
10
1
VR=30V
0.1
0.01
0.001
0.1
0
25
50
75
100
125
Temperature (°C)
150
0
175
25
50
75
100
125
150
175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
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