AO4900 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4900 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4900 is Pbfree (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, I F = 3A, VF=0.5V@1A UIS TESTED! Rg,Ciss,Coss,Crss Tested D2 S2/A G2 S1 G1 1 2 3 4 D2/K D2/K D1 D1 8 7 6 5 K A G2 SOIC-8 S2 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current AF TA=70°C B ID IDM VKA Schottky reverse voltage TA=25°C Continuous Forward Current AF Pulsed Forward Current D1 TA=70°C B G1 S1 MOSFET TA=70°C Power Dissipation Avalanche Current B ±12 6.9 V 5.8 A 40 IF Repetitive avalanche energy 0.3mH B Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET A t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Maximum Junction-to-Lead C Thermal Characteristics Schottky Steady-State Steady-State Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient Maximum Junction-to-Lead C A Steady-State Alpha Omega Semiconductor, Ltd. Steady-State PD Units V IFM TA=25°C Schottky 30 30 3 V 2 A 2 40 2 1.44 1.44 W IAR 15 A EAR 34 mJ TJ, TSTG -55 to 150 -55 to 150 °C Typ Max Units 48 62.5 74 35 110 40 47.5 62.5 71 32 110 40 Symbol RθJA RθJL RθJA RθJL °C/W °C/W www.aosmd.com AO4900 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=4.5V, VDS=5V 25 TJ=55°C 5 100 nA 1.4 V 22.6 27 33 40 VGS=4.5V, ID=6.0A 27 32 mΩ VGS=2.5V, ID=5A 42 50 mΩ TJ=125°C gFS Forward Transconductance VSD Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current IS VDS=5V, ID=5A 12 Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A 16 0.71 DYNAMIC PARAMETERS Ciss Input Capacitance Coss µA 1 VGS=10V, ID=6.9A Static Drain-Source On-Resistance Max Units V VDS=30V, VGS=0V IDSS RDS(ON) Typ 846 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=6.9A S 1 V 3 A 1050 pF 96 0.7 mΩ pF 67 94 pF 1.4 2 Ω 9.6 12 nC 1.65 nC Qgd Gate Drain Charge 3 tD(on) Turn-On DelayTime 3.2 4.8 ns tr Turn-On Rise Time 4.1 6.2 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery time Qrr VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω nC 26.3 40 ns 3.7 5.5 ns IF=5A, dI/dt=100A/µs 15.5 20 Body Diode Reverse Recovery charge IF=5A, dI/dt=100A/µs 7.9 SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1.0A 0.45 0.007 0.05 Irm VR=30V VR=30V, TJ=125°C Maximum reverse leakage current VR=30V, TJ=150°C CT Junction Capacitance VR=15V ns nC 0.5 3.2 10 12 37 20 V mA pF A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev4: Dec 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. www.aosmd.com AO4900 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 3V 25 2.5V 15 ID(A) ID (A) 20 VDS=5V 16 4.5V 10 VGS=2V 5 12 8 125°C 4 0 0 0 1 2 3 4 0 5 0.5 1.5 2 2.5 3 1.7 Normalized On-Resistance 60 VGS=2.5V 50 RDS(ON) (mΩ) 1 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 40 30 VGS=4.5V 20 VGS=10V 10 0 5 10 15 1.6 ID=5A 1.5 VGS=10V VGS=4.5V 1.4 1.3 VGS=2.5V 1.2 1.1 1 0.9 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature (°C) Figure 4: On resistance vs. Junction Temperature 1.0E+01 70 60 1.0E+00 ID=5A 1.0E-01 50 40 IS (A) RDS(ON) (mΩ) 25°C 125°C 30 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 25°C 20 1.0E-05 1.0E-06 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage Alpha Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4900 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 5 VDS=15V ID=6.9A Capacitance (pF) VGS (Volts) 4 f=1MHz VGS=0V 1250 3 2 Ciss 1000 1 750 500 Coss 250 0 0 2 4 6 8 10 0 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 ID (A) 10ms 0.1s 1.0 15 20 25 30 TJ(Max)=150°C TA=25°C 30 100µs 1ms 10 40 Power (W) 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C RDS(ON) limited Crss 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. www.aosmd.com AO4900 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 250 10 f = 1MHz 125°C Capacitance (pF) IF (Amps) 1 200 0.1 0.01 150 100 50 25°C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 0 VF (Volts) Figure 12: Schottky Forward Characteristics 0.7 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 100 0.6 IF=3A Leakage Current (mA) VF (Volts) 5 0.5 0.4 IF=1A 0.3 0.2 10 1 VR=30V 0.1 0.01 0.001 0.1 0 25 50 75 100 125 Temperature (°C) 150 0 175 25 50 75 100 125 150 175 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. www.aosmd.com