AO4952 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) on Low-Side • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application VDS Q1 30V Q2 30V ID (at VGS=10V) 11A 11A RDS(ON) (at VGS=10V) <10.5mΩ <11.5mΩ RDS(ON) (at VGS=4.5V) <15.5mΩ <16.5mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial SOIC-8 Top View Q1: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Bottom View Top View D2 G2 D2 S2/D1 S2/D1 S2/D1 G1 S1 D1 G1 D2 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C ID TA=70°C Max Q2 Units V ±20 ±20 V 11 11 30 A 9 9 Pulsed Drain Current C IDM 75 74 Avalanche Current C IAS 18 15 A Avalanche Energy L=0.1mH C EAS 16 11 mJ VDS Spike VSPIKE 36 36 V 2 2 1.3 1.3 Power Dissipation B 100ns TC=25°C PD TC=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: February 2013 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 W °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 8 AO4952 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=10mA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance 100 1.4 VGS=10V, ID=11A TJ=125°C VGS=4.5V, ID=9A gFS Forward Transconductance VSD Diode Forward Voltage IS=0.2A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=10V, VDS=15V, ID=11A 1 Units V 0.5 TJ=55°C VDS=5V, ID=11A Max 30 VDS=30V, VGS=0V IDSS Coss Typ mA ±100 nA 1.8 2.5 V 8.3 10.5 11.8 15 12.2 15.5 52 0.45 mΩ mΩ S 0.65 V 2.5 A 605 pF 275 pF 37 pF 2 3 Ω 10.2 15 nC 4.9 8 nC 2 nC Gate Drain Charge 2.3 nC tD(on) Turn-On DelayTime 5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=1.36Ω, RGEN=3Ω IF=11A, dI/dt=500A/µs 3 ns 17.5 ns 3 ns 11 ns nC 12.5 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: February 2013 www.aosmd.com Page 2 of 8 AO4952 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 5V 10V VDS=5V 7V 4.5V 60 4V 40 ID(A) ID (A) 60 40 125°C 20 20 25°C VGS=3V 0 0 0 1 2 3 4 0 5 20 2 3 4 5 6 Normalized On-Resistance 1.6 16 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 12 8 VGS=10V 4 VGS=10V ID=11A 1.4 1.2 VGS=4.5V ID=9A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 25 1.0E+01 ID=11A ID=11.5A 1.0E+00 20 125°C 15 125°C IS (A) RDS(ON) (mΩ Ω) 1.0E-01 125°C 10 1.0E-02 1.0E-03 5 25°C 1.0E-04 25°C 25°C 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: February 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 8 AO4952 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1000 VDS=15V ID=11A 800 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 600 400 Coss 2 200 0 0 Crss 0 3 6 9 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 1000.0 TA=25°C 10µs RDS(ON) limited 10.0 100us 1ms 1.0 TJ(Max)=150°C TA=25°C 0.1 100ms DC 0.0 1000 Power (W) ID (Amps) 100.0 100 10 1 0.01 0.1 1 10 100 1E-05 0.001 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.1 10 Pulse Width (s) 1000 Figure 10: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: February 2013 www.aosmd.com Page 4 of 8 AO4952 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=11A TJ=125°C VGS=4.5V, ID=9A gFS Forward Transconductance VDS=5V, ID=11A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=10V, VDS=15V, ID=11A ±100 nA 2.2 V 9 11.5 12.4 15.8 12.8 16.5 mΩ 1 V 2.5 A 40 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge 1.8 0.72 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance µA 5 1.4 1 Units V 1 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ mΩ S 542 pF 233 pF 31 pF 2 3 Ω 9 12.5 nC 4.3 6 nC 2.2 nC Gate Drain Charge 1.7 nC tD(on) Turn-On DelayTime 4 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr IF=11A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=11A, dI/dt=500A/µs Qrr VGS=10V, VDS=15V, RL=1.36Ω, RGEN=3Ω 3.5 ns 18 ns 3 ns 9.7 ns nC 11.5 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: February 2013 www.aosmd.com Page 5 of 8 AO4952 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V 40 4.5V VDS=5V 6V 40 4V 30 ID(A) ID (A) 30 3.5V 20 20 125°C 10 10 25°C VGS=3V 0 0 0 1 2 3 4 5 0 20 2 3 4 5 6 Normalized On-Resistance 1.6 16 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 12 8 VGS=10V 4 0 VGS=10V ID=11A 1.4 1.2 VGS=4.5V ID=9A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 25 ID=11A 1.0E+00 1.0E-01 125°C 15 IS (A) RDS(ON) (mΩ Ω) 20 125°C 1.0E-02 10 25°C 1.0E-03 25°C 5 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: February 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 6 of 8 AO4952 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=15V ID=11A 8 Ciss Capacitance (pF) VGS (Volts) 600 6 4 400 Coss 200 2 Crss 0 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 1000.0 TA=25°C 1000 10µs RDS(ON) limited 10.0 Power (W) ID (Amps) 100.0 100µs 1.0 1ms 10ms DC TJ(Max)=150°C TA=25°C 0.1 100 10 0.0 1 0.01 0.1 1 10 100 1E-05 0.001 0.1 10 Pulse Width (s) VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 Figure 10: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: February 2013 www.aosmd.com Page 7 of 8 AO4952 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.1.0: February 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 8 of 8