AOS Semiconductor Product Reliability Report AO4614B/AO4614BL, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com Feb 25, 2008 This AOS product reliability report summarizes the qualification result for AO4614B. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO4614B passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. V. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation Quality Assurance Information I. Product Description: The AO4614B uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4614B is Pb-free (meets ROHS & Sony 259 specifications). Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C Units 40 -40 V ±20 ±20 V 6 -5 5 -4 30 -30 2 2 1.28 1.28 -55 to 150 -55 to 150 ID TA=70°C Pulsed Drain Current Power Dissipation Max p-channel Max n-channel IDM TA=25°C TA=70°C Junction and Storage Temperature Range PD TJ, TSTG A W °C Thermal Characteristics : n-channel and p-channel Parameter Maximum Junctionto-Ambient Maximum Junctionto-Ambient Maximum Junctionto-Lead Maximum Junctionto-Ambient Maximum Junctionto-Ambient Maximum Junctionto-Lead Symbol t ≤ 10s SteadyState SteadyState t ≤ 10s SteadyState SteadyState RθJA RθJL RθJA RθJL Device Typ. Max n-ch 48 62.5 n-ch 74 110 n-ch 35 50 p-ch 48 62.5 p-ch 74 110 p-ch 35 50 Units °C/W II. Die / Package Information: AO4614B AO4614B (Green Compound) Process Standard sub-micron Standard sub-micron low voltage N+P channel process low voltage N+P channel process Package Type 8 lead SOIC 8 lead SOIC Lead Frame Cu, D/pad, Ag spot Cu, D/pad, Ag spot Die Attach Silver epoxy Silver epoxy Bond wire S: Cu 2mils; G: Au 1.3mils S: Cu 2mils; G: Au 1.3mils Mold Material Epoxy resin with silica filler Epoxy resin with silica filler Filler %( Spherical/Flake) 90/10 100/0 Flammability Rating UL-94 V-0 UL-94 V-0 Backside Metallization Ti / Ni / Ag Ti / Ni / Ag Moisture Level Up to Level 1 * Up to Level 1* Note * based on information provided by assembler and mold compound supplier III. Result of Reliability Stress for AO4614B (Standard) & AO4614BL (Green) Test Item Test Condition Time Point Solder Reflow Precondition Standard: 1hr PCT+3 cycle reflow@260°°c Green: 168hr 85°°c /85%RH +3 cycle reflow@260°°c Temp = 150°°c, Vgs=100% of Vgsmax 0hr HTGB HTRB Temp = 150°°c, Vds=80% of Vdsmax 168 / 500 hrs 1000 hrs 168 / 500 hrs 1000 hrs Lot Attribution Standard: 18 lots 1 lot (Note A*) 1 lot Total Sample size Number of Failures 2750pcs 0 82 pcs 0 77+5 pcs / lot 82 pcs 0 77+5 pcs / lot (Note A*) HAST Pressure Pot Temperature Cycle 130 +/- 2°°c, 85%RH, 33.3 psi, Vgs = 80% of Vgs max 121°°c, 29.7psi, RH=100% -65°°c to 150°°c, air to air 100 hrs Standard: 15 lots 825 pcs 0 96 hrs (Note B**) Standard: 17 lots 50+5 pcs / lot 935 pcs 0 (Note B**) 50+5 pcs / lot 250 / 500 cycles Standard: 18 lots (Note B**) 990 pcs 50+5 pcs / lot 0 III. Result of Reliability Stress for AO4614B (Standard) & AO4614BL (Green) Continues Internal Vision Cross-section X-ray DPA CSAM NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°°c bake 150°°c bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 245°°C 5 sec 15 15 leads 0 Note A: The HTGB and HTRB reliability data presents total of available AO4614B and AO4614BL burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AO4614B and AO4614BL comes from the AOS generic package qualification data. IV. Reliability Evaluation FIT rate (per billion): 64 MTTF = 1780 years In general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability group also routinely monitors the product reliability up to 1000 hr at and performs the necessary failure analysis on the units failed for reliability test(s). The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO4614B). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 7 MTTF = 10 / FIT =1.56 x 10 hrs = 1780 years / [2 (164) (500) (258)] = 64 Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s )] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K V. Quality Assurance Information Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual. Guaranteed Outgoing Defect Rate: < 25 ppm Quality Sample Plan: conform to Mil-Std-105D