Datasheet

AO4627
30V Complementary MOSFET
General Description
Product Summary
The AO4627 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This
complementary N and P channel MOSFET configuration
is ideal for low Input Voltage inverter applications.
N-Channel
VDS= 30V
P-Channel
-30V
ID= 4.5A (VGS=10V)
-3.5A (VGS=-10V)
RDS(ON)
RDS(ON)
< 50mΩ (VGS=10V)
< 100mΩ (VGS=-10V)
< 68mΩ (VGS=4.5V)
< 165mΩ (VGS=-4.5V)
100% UIS Tested
100% Rg Tested
100% UIS Tested
100% Rg Tested
SOIC-8
D1
D2
Top View
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
G1
S2
n-channel
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
ID
TA=70°C
S1
p-channel
Max p-channel
-30
Units
V
±20
±20
V
4.5
-3.5
A
3.5
-2.5
Pulsed Drain Current C
IDM
25
-20
Avalanche Current C
IAS, IAR
8
-8
A
Avalanche energy L=0.1mH C
EAS, EAR
3
3
mJ
2
2
1.3
1.3
TA=25°C
Power Dissipation
B
PD
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 0: July 2011
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
www.aosmd.com
-55 to 150
Typ
48
74
32
W
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Page 1 of 9
AO4627
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Max
30
1
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
25
Units
V
VDS=30V, VGS=0V
IGSS
µA
±100
nA
2
2.5
V
39
50
63
78
VGS=4.5V, ID=3A
50
68
mΩ
10
1
V
2.5
A
VGS=10V, ID=4.5A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=4.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
A
0.79
mΩ
S
135
170
210
pF
VGS=0V, VDS=15V, f=1MHz
25
35
45
pF
13
23
33
pF
VGS=0V, VDS=0V, f=1MHz
1.7
3.5
5.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.05
5
nC
Qg(4.5V) Total Gate Charge
2
3
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=4.5A
VGS=10V, VDS=15V, RL=3.3Ω,
RGEN=3Ω
0.55
nC
1
nC
4.5
ns
1.5
ns
18.5
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=4.5A, dI/dt=100A/µs
7.5
Qrr
Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs
2.5
15.5
ns
10
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: July 2011
www.aosmd.com
Page 2 of 9
AO4627
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15
10V
VDS=5V
4.5V
12
4V
8
7V
ID(A)
6
ID (A)
9
3.5V
6
3
2
VGS=3V
0
25°C
0
0
1
2
3
4
5
1
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
60
Normalized On-Resistance
2
VGS=4.5V
RDS(ON) (mΩ
Ω)
125°C
4
50
40
VGS=10V
30
1.8
VGS=10V
ID=4.5A
1.6
17
5
2
VGS=4.5V
10
I =3A
1.4
1.2
D
1
0.8
0
2
4
6
8
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
10
0
110
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
ID=4.5A
1.0E+01
40
1.0E+00
IS (A)
RDS(ON) (mΩ
Ω)
90
125°C
70
1.0E-01
1.0E-02
1.0E-03
50
125°C
25°C
1.0E-04
25°C
30
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: July 2011
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 9
AO4627
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
300
VDS=15V
ID=4.5A
250
Capacitance (pF)
VGS (Volts)
8
6
4
200
Ciss
150
100
Coss
2
50
Crss
0
0
0
1
2
3
4
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
5
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
100.0
TA=25°C
10µs
RDS(ON)
limited
100
100µs
1.0
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
DC
Power (W)
ID (Amps)
10.0
10
10s
1
0.0
0.01
0.1
1
VDS (Volts)
10
100
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=90°C/W
0.1
PD
0.01
Ton
T
0.001
0.00001
Rev 0: July 2011
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
www.aosmd.com
100
1000
Page 4 of 9
AO4627
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 0: July 2011
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 5 of 9
AO4627
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
-30
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
ID(ON)
On state drain current
VDS=VGS, ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-3.5A
RDS(ON)
Typ
-5
-1.4
VGS=-4.5V, ID=-2A
VDS=-5V, ID=-3.5A
IS=-1A,VGS=0V
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
µA
±100
nA
-1.9
-2.4
V
78
100
111
140
120
165
mΩ
-1
V
-2.5
A
-20
TJ=125°C
Units
V
-1
TJ=55°C
Static Drain-Source On-Resistance
Max
A
6
-0.8
mΩ
S
155
197
240
pF
VGS=0V, VDS=-15V, f=1MHz
28
42
55
pF
15
26
37
pF
VGS=0V, VDS=0V, f=1MHz
3.5
7.2
11
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.3
5.2
nC
Qg(4.5V) Total Gate Charge
2.2
3
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=-15V, ID=-3.5A
0.7
nC
1.1
nC
7.5
ns
4.1
ns
11.8
ns
VGS=10V, VDS=-15V, RL=4Ω,
RGEN=3Ω
IF=-3.5A, dI/dt=100A/µs
11.3
Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/µs
4.4
3.8
ns
14
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: July 2011
www.aosmd.com
Page 6 of 9
AO4627
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15
-10V
VDS=-5V
-6V
-8V
12
8
-5V
6
-ID(A)
-ID (A)
9
-4.5V
4
6
125°C
-4V
2
3
25°C
VGS=-3.5V
0
0
0
1
2
3
4
5
1
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2
3
4
5
6
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
200
1.6
Normalized On-Resistance
180
160
RDS(ON) (mΩ
Ω)
VGS=-4.5V
140
120
100
80
VGS=-10V
60
40
VGS=-10V
ID=-3.5A
1.4
17
5
2
VGS=-4.5V
10
1.2
1
ID=-2A
0.8
0
2
4
6
8
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
10
0
300
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
ID=-3.5A
1.0E+01
260
40
1.0E+00
-IS (A)
RDS(ON) (mΩ
Ω)
220
180
125°C
1.0E-01
1.0E-02
125°C
25°C
140
1.0E-03
100
25°C
1.0E-04
60
1.0E-05
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: July 2011
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 9
AO4627
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
300
VDS=-15V
ID=-3.5A
250
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
200
150
100
2
50
0
0
Coss
Crss
0
1
2
3
4
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
100.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1.0
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
100
Power (W)
10.0
-ID (Amps)
0
5
10
10s
DC
0.0
1
0.01
0.1
1
-VDS (Volts)
10
100
0.00001
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: July 2011
www.aosmd.com
Page 8 of 9
AO4627
Gate Charge Test Circuit & W aveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
td(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0: July 2011
Vgs
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
www.aosmd.com
Page 9 of 9