AOS Semiconductor Product Reliability Report AO4444L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com This AOS product reliability report summarizes the qualification result for AO4444L. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO4444L passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: TM The AO4444L is fabricated with SDMOS trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. -RoHS Compliant -Halogen Free Detailed information refers to datasheet. II. Die / Package Information: AO4444L Standard sub-micron Low voltage N channel Package Type 8 leads SOIC Lead Frame Copper Die Attach Epoxy Bonding Wire Cu/Au wire Mold Material Epoxy resin with silica filler Flammability Rating UL-94 V-0 Backside Metallization Ti / Ni / Ag MSL (moisture sensitive level) Level 1 based on J-STD-020 Process Note * based on information provided by assembler and mold compound supplier III. Result of Reliability Stress for AO4444L Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c - HTGB Temp = 150 °c, Vgs=100% of Vgsmax 168hrs 500 hrs 1000 hrs Lot Attribution Total Sample size Number of Failures 29 lots 3575pcs 0 JESD22A113 77pcs 0 JESD22A108 0 JESD22A108 880pcs 0 JESD22A110 1 lot (Note A*) HTRB Temp = 150 °c, Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 1 lot (Note A*) HAST Pressure Pot Temperature Cycle Standard 77pcs / lot 77pcs 77pcs / lot 130 +/- 2°°c, 85%RH, 33.3 psi, Vgs = 80% of Vgs max 121°°c, 29.7psi, RH=100% 100 hrs 16 lots 96 hrs (Note A*) 20 lots 55 pcs / lot 1100pcs 0 JESD22A102 -65°°c to 150°°c, air to air 250 / 500 cycles (Note A*) 29 lots 55 pcs / lot 1595pcs 0 JESD22A104 (Note A*) 55 pcs / lot Note A: The reliability data presents total available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 137 MTTF = 833 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO4444L). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 6 MTTF = 10 / FIT = 7.30 x 10 hrs = 833 years / [2x2x77x168x 258] = 137 Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s )] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 K = Boltzmann’s constant, 8.617164 X 10-5eV / K