Midium Power Transistors (50V / 3A) MP6X13 Structure NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) Features 1) Low saturation voltage VCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50mA) (1) (2) (3) (4) (5) (6) 2) High speed switching Tr.1 Tr.1 Tr.2 Tr.2 Tr.2 Tr.1 Emitter Base Collector Emitter Base Collector Applications Low Frequency Amplifier Driver Packaging specifications Type Package Code Basic ordering unit (pieces) Inner circuit MPT6 TR 1000 (6) (5) (4) Absolute maximum ratings (Ta = 25C) <It is the same ratings for the Tr.1 and Tr.2> Parameter Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage Collector current VEBO 6 V Continuous IC 3 A Pulsed ICP *1 6 A PD *2 2.0 W/Total PD *2 1.4 W/Element 150 -55 to 150 C C Power dissipation Junction temperature Range of storage temperature Tj Tstg (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 Emitter Base Collector Emitter (1) Base Collector (2) (3) *1 Pw=10ms, 1Pulse *2 Mounted on a 40 x 40 x 0.7[mm ] ceramic board. www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.11 - Rev.A MP6X13 Data Sheet Electrical characteristics (Ta = 25C) <It is the same characteristics for the Tr.1 and Tr.2> Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO 50 - - V IC= 1mA Collector-base breakdown voltage BVCBO 50 - - V IC= 100μA Emitter-base breakdown voltage BVEBO 6 - - V IE= 100μA Collector cut-off current ICBO - - 1 A VCB= 50V Emitter cut-off current IEBO - - 1 A VEB= 4V VCE(sat)*1 - 130 350 hFE 180 - 450 Parameter Collector-emitter staturation voltage DC current gain Transition frequency fT *1 - 320 - 13 - mV IC= 1A, IB= 50mA - Cob - Turn-on time ton *2 tstg *2 - 50 - ns - 450 - ns tf *2 - 80 - ns Fall time VCE= 3V, IC= 50mA VCE= 10V MHz IE=-500mA, f=100MHz Collector output capacitance Storage time Conditions pF VCB= 10V, IE=0A f=1MHz IC= 1.5A, IB1= 150mA, _ 10V IB2=-150mA, VCC~ *1 Pulsed *2 See switching time test circuit www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.11 - Rev.A MP6X13 Fig.1 Typical Output Characteristics 3.0mA 5mA Data Sheet 2.5mA Fig.2 DC Current Gain vs. Collector Current ( I ) 2.0mA 0.5 1000 Ta=25°C 1.5mA DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC[A] 0.4 0.3 1.0mA 0.2 VCE=5V 3V 100 0.5mA 0.1 Ta=25°C 0.0 10 0 0.5 1 1.5 2 1 10 Fig3. DC Current Gain vs. Collector Current ( II ) 10000 Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I ) 1000 1 COLLECTOR SATURATION VO OLTAGE : VCE(sat)[V] VCE=3V DC CURRENT G GAIN : hFE 1000 COLLECTOR CURRENT : IC[mA] COLECTOR TO EMITTER VOLTAGE :VCE[V] Ta=125°C 100 75°C 25°C -40°C Ta=25°C 0.1 IC/IB=50 20 10 0.01 0.001 10 1 10 100 1000 1 10000 10 COLLECTOR CURRENT : IC[mA] 100 1000 10000 COLLECTOR CURRENT : IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II ) Fig.6 Ground Emitter Propagation Characteristics 10000 1 VCE=3V COLLECTOR CURRENT : IC[mA] COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] 100 0.1 Ta=125°C 0.01 75°C 25°C 1000 Ta=125°C 75°C 100 25°C -40°C 10 -40°C IC/IB=20 1 0.001 1 10 100 1000 0 10000 COLLECTOR CURRENT : IC[mA] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 0.2 0.4 0.6 0.8 1 1.2 1.4 BASE TO EMITTER VOLTAGE : VBE[V] 3/5 2010.11 - Rev.A MP6X13 Data Sheet Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage Fig.8 Gain Bandwidth Product vs. Emitter Current 1000 Ta=25°C VCE=10V Ta=25°C f=1MHz IE=0A IC=0A TRANSITION FREQUENCY : fT[MHz] COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 1000 Cib 100 10 Cob 100 10 1 0.1 1 10 10 100 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) 100 1000 EMITTER CURRENT : IE[mA] Fig.9 Safe Operating Area 10 COLLECTOR CURR RENT : IC [A] 1ms 10ms 1 100ms DC （Mounted on a ceramic board） 0.1 Ta=25℃ When on element operated Single non repetitive pulse 0.01 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE[V] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.11 - Rev.A MP6X13 Data Sheet Switching time test circuit RL=7.5Ω I B1 V IN IC VCC _10V ~ IB2 Pw _50μs Pw ~ DUTY CYCLE1% I B1 BASE CURENT WAVEFORM IB2 COLLECTOR CURRENT WAVEFORM ton 90% t stg tf IC 10% www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.11 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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