Datasheet

AO6404
20V N-Channel MOSFET
General Description
Product Summary
• The AO6404 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating.
VDS (V) = 20V
ID = 8.6A (V GS = 10V)
RDS(ON) < 17mΩ (V GS = 10V)
RDS(ON) < 18mΩ (VGS = 4.5V)
RDS(ON) < 24mΩ (VGS = 2.5V)
RDS(ON) < 33mΩ (VGS = 1.8V)
• RoHS and Halogen-Free Compliant
ESD Rating: 2000V HBM
ESD Protected
100% UIS Tested
100% Rg Tested
TSOP6
Top View
D
Bottom View
Top View
D
1
6
D
D
2
5
D
G
3
4
S
G
S
Pin1
Orderable Part Number
AO6404
Package Type
TSOP6
Form
Tape & Reel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A
B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
Rev.5.0: April 2016
Units
V
±12
V
ID
6.8
IDM
30
W
1.28
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
2
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum
20
8.6
TA=70°C
Pulsed Drain Current
Minimum Order Quantity
3000
RθJA
RθJL
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Typ
45
70
33
°C
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO6404
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±10V
BVGSO
Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
±12
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
TJ=55°C
25
10
VGS=10V, ID=8.5A
0.75
17
20
VGS=4.5V, ID=5A
14.8
18
mΩ
VGS=2.5V, ID=4A
18.8
24
mΩ
VGS=1.8V, ID=3A
25.5
33
mΩ
1
V
2.9
A
2200
pF
VDS=5V, ID=8A
36
Diode Forward Voltage
IS=1A,VGS=0V
0.73
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Rg
Gate resistance
1810
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
Gate Source Charge
V
16
Forward Transconductance
Reverse Transfer Capacitance
1
A
VSD
Crss
µA
V
gFS
Output Capacitance
µA
13.4
TJ=125°C
Coss
Units
V
VDS=16V, VGS=0V
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
IDSS
RDS(ON)
Typ
VGS=4.5V, VDS=10V, ID=8.5A
mΩ
S
232
pF
200
pF
1.6
2.2
Ω
17.9
22
nC
1.5
nC
Qgd
Gate Drain Charge
4.7
nC
tD(on)
Turn-On DelayTime
2.5
ns
tr
Turn-On Rise Time
7.2
ns
tD(off)
Turn-Off DelayTime
49
ns
tf
trr
Body Diode Reverse Recovery Time
IF=8.5A, dI/dt=100A/µs
22
Qrr
Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs
9.8
VGS=10V, VDS=10V, RL=1.2Ω,
RGEN=3Ω
Turn-Off Fall Time
10.8
ns
27
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.5.0: April 2016
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Page 2 of 5
AO6404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10
35
30
2.5V
4.5V
VDS=5V
2V
25
30
20
ID(A)
ID (A)
25
20
15
15
125°C
10
10
VGS=1.5V
5
25°C
5
0
0
0
1
2
3
4
5
0
0.5
VDS (Volts)
Fig 1: On-Region Characteristics
30
1.5
2
2.5
1.6
ID=5A
Normalized On-Resistance
VGS=1.8V
25
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics
VGS=2.5V
20
VGS=4.5V
15
VGS=10V
10
5
VGS=4.5V
VGS=2.5V
1.4
VGS=10V
1.2
VGS=1.8V
1
0.8
0
5
10
15
20
0
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
40
10
ID=5A
35
1
25
125°C
0.1
125°C
IS (A)
RDS(ON) (mΩ
Ω)
30
20
0.01
15
25°C
0.001
10
25°C
5
0.0001
0
0
2
4
6
8
10
0.00001
0.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev.5.0: April 2016
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0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 5
AO6404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
5
VDS=10V
ID=8A
2500
Capacitance (pF)
VGS (Volts)
4
3
2
1500
1000
1
Coss
500
Crss
0
0
4
8
12
16
0
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
40
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1ms
30
10µs
Power (W)
10.0
5
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
ID (Amps)
Ciss
2000
10ms
1.0
1s
0.1s
10
TJ(Max)=150°C
TA=25°C
DC
0
0.001
0.1
0.1
20
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/(Ton+Toff)
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PDM
0.1
Ton
Toff
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev.5.0: April 2016
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Page 4 of 5
AO6404
Figure A:
Gate
Gate
Charge
Charge
Test Test
CircuitCircuit
& Waveform
& Waveforms
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B: Resistive
TestCircuit
Circuit
& Waveforms
ResistiveSwitching
Switching Test
& Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure Unclamped
C: Unclamped
Inductive
Switching
(UIS)
Test
Circuit &
Inductive
Switching
(UIS) Test
Circuit
& Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure Diode
D: Diode
Recovery
Test Circuit
& Waveforms
Recovery
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.5.0: April 2016
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5