AOS Semiconductor Product Reliability Report AOT2608L & AOB2608L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOT2608L & AOB2608L. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOT2608L & AOB2608L pass AOS quality and reliability requirements. The released products will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOT2608L & AOB2608L uses Trench MOSFET 60V technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a soft recovery body diode. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. -RoHS Compliant -Halogen Free Details refer to the datasheet. II. Die / Package Information: AOT2608L & AOB2608L Standard sub-micron Low voltage N channel process Package Type TO220/TO263 Lead Frame Bare Cu Die Attach Soft solder Bond wire Al wire Mold Material Epoxy resin with silica filler MSL (moisture sensitive level) Level 1 based on J-STD-020 Note * based on info provided by assembler and mold compound supplier Process 2 III. Result of Reliability Stress for AOT2608L & AOB2608L Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@250°c Temp = 150°c , Vgs=100% of Vgsmax - Temp = 150°c , Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 130 +/- 2°c , 85%RH, 33.3 psi, Vgs = 80% of Vgs max 121°c , 29.7psi, RH=100% 100 hrs 96 hrs -65°c to 150°c , air to air, 250 / 500 cycles HTGB HTRB HAST Pressure Pot Temperature Cycle 168hrs 500 hrs 1000 hrs Lot Attribution Total Sample size Number of Failures Reference Standard 9 lots/package 990pcs 0 JESD22A113 2 lots 385pcs 0 JESD22A108 77 pcs / lot 385pcs 0 JESD22A108 (Note A*) 3 lots/package 77 pcs / lot 330pcs 0 JESD22A110 (Note A*) 3 lots/package 55 pcs / lot 330pcs 0 JESD22A102 (Note A*) 3 lots/package 55 pcs / lot 330pcs 0 JESD22A104 (Note A*) 55 pcs / lot 3 lots (Note A*) 2 lots 3 lots Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 7 MTTF = 16536 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOT2608L & AOB2608L). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 8 MTTF = 10 / FIT = 1.45 x 10 hrs = 16536 years / [2x (4x77x168+6x77x1000) x258] = 7 Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 3