Datasheet

AO4264E
60V N-Channel AlphaSGT TM
General Description
Product Summary
VDS
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Low Gate Charge
• ESD protected
Applications
ID (at VGS=10V)
60V
13.5A
RDS(ON) (at VGS=10V)
< 9.8mΩ
RDS(ON) (at VGS=4.5V)
< 13.5mΩ
Typical ESD protection
HBM Class 2
100% UIS Tested
100% Rg Tested
• High efficiency power supply
• Secondary synchronus rectifier
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
PIN1
S
S
S
S
PIN1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AO4264E
SO-8
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche energy
VDS Spike
G
Power Dissipation B
L=0.3mH
C
10µs
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev.1.0: May 2016
17
A
EAS
43
mJ
72
V
3.1
Steady-State
Steady-State
W
2.0
TJ, TSTG
Symbol
t ≤ 10s
A
IAS
PD
Junction and Storage Temperature Range
V
54
VSPIKE
TA=70°C
±20
10.5
IDM
Avalanche Current C
Units
V
13.5
ID
TA=70°C
Maximum
60
RθJA
RθJL
-55 to 150
Typ
31
59
16
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°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4264E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
VGS=10V, ID=13.5A
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=13.5A
VSD
Diode Forward Voltage
IS=1A, VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
VGS=4.5V, ID=11.5A
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
f=1MHz
µA
2.4
V
8
9.8
12.5
15.0
10.5
13.5
0.72
VGS=0V, VDS=30V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
±10
1.8
48
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
µA
5
1.4
0.6
Units
V
1
TJ=55°C
RDS(ON)
Max
60
VDS=60V, VGS=0V
IDSS
Coss
Typ
mΩ
mΩ
S
1
V
4
A
1100
pF
300
pF
28
pF
1.2
2.0
Ω
14.5
25
nC
7
13
nC
Qg(4.5V)
Total Gate Charge
Qgs
Gate Source Charge
2.5
nC
Qgd
Gate Drain Charge
3.5
nC
tD(on)
Turn-On DelayTime
6.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=13.5A, di/dt=500A/µs
Body Diode Reverse Recovery Time
VGS=10V, VDS=30V, ID=13.5A
VGS=10V, VDS=30V, RL=2.2Ω,
RGEN=3Ω
3.5
ns
22
ns
3
ns
IF=13.5A, di/dt=500A/µs
18.5
ns
nC
59
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.10.: May 2016
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Page 2 of 5
AO4264E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
4.5V
VDS=5V
3.5V
50
50
6V
40
ID (A)
ID (A)
40
30
3V
20
30
125°C
20
VGS=2.5V
10
25°C
10
0
0
0
1
2
3
4
1
5
3
4
5
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
14
Normalized On-Resistance
1.8
12
RDS(ON) (mΩ)
2
VGS=4.5V
10
8
VGS=10V
6
1.6
VGS=10V
ID=13.5A
1.4
1.2
VGS=4.5V
ID=11.5A
1
0.8
4
0
3
6
9
12
0
15
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
35
1.0E+01
ID=13.5A
30
1.0E+00
125°C
1.0E-01
20
IS (A)
RDS(ON) (mΩ)
25
125°C
1.0E-02
15
25°C
1.0E-03
10
5
1.0E-04
25°C
0
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.10.: May 2016
4
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0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
1.0
Page 3 of 5
AO4264E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
VDS=30V
ID=13.5A
Ciss
1200
Capacitance (pF)
VGS (Volts)
8
6
4
2
900
600
Coss
300
0
Crss
0
0
3
6
9
12
15
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
60
TJ(Max)=150°C
TA=25°C
100µs
1ms
10ms
TJ(Max)=150°C
TA=25°C
Power (W)
ID (Amps)
40
10µs
1.0
0.1
30
1000
10µs
10.0
20
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
RDS(ON)
limited
10
100
10
DC
0.0
0.01
0.1
1
VDS (Volts)
10
100
1
0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PDM
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.10.: May 2016
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Page 4 of 5
AO4264E
Figure
A: Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS) Test
Unclamped
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.10.: May 2016
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5