AO4296 100V N-Channel AlphaSGT TM General Description Product Summary • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge ID (at VGS=10V) 100V 13.5A RDS(ON) (at VGS=10V) < 8.3mΩ RDS(ON) (at VGS=4.5V) < 10.6mΩ VDS Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification for AC/DC Quick Charger SOIC-8 Top View D D D Bottom View D D G G S S S S Orderable Part Number Package Type Form Minimum Order Quantity AO4296 SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Avalanche energy L=0.1mH VDS Spike 10µs TA=25°C Power Dissipation B C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: March 2016 Steady-State Steady-State A IAS 33 A EAS 54 mJ VSPIKE 120 V 3.1 W 2.0 TJ, TSTG Symbol t ≤ 10s V 55 PD TA=70°C ±20 10.5 IDM Avalanche Current C Units V 13.5 ID TA=70°C Maximum 100 RθJA RθJL -55 to 150 Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4296 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 1.3 ±100 nA 1.75 2.3 V 6.8 8.3 12.2 14.8 10.6 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=11.5A 8.0 gFS Forward Transconductance VDS=5V, ID=13.5A 75 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=50V, ID=13.5A µA 5 VGS=10V, ID=13.5A Coss Units V VDS=100V, VGS=0V IDSS Max 0.7 mΩ mΩ S 1 V 4 A 3130 pF 245 pF 12.5 pF 1.4 2.1 Ω 42 60 nC 18.5 28 nC 7.5 nC Gate Drain Charge 4.5 nC Turn-On DelayTime 8 ns 5 ns 41 ns VGS=10V, VDS=50V, RL=3.70Ω, RGEN=3Ω 7 ns IF=13.5A, di/dt=500A/µs 28 Body Diode Reverse Recovery Charge IF=13.5A, di/dt=500A/µs 130 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: March 2016 www.aosmd.com Page 2 of 5 AO4296 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 4V 3.0V VDS=5V 40 40 4.5V 10V 30 ID (A) ID (A) 30 20 125°C 20 VGS=2.5V 10 25°C 10 0 0 0 1 2 3 4 1 5 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 2.2 10 Normalized On-Resistance 9 VGS=4.5V RDS(ON) (mΩ) 2 8 7 VGS=10V 6 5 2 VGS=10V ID=13.5A 1.8 1.6 1.4 VGS=4.5V ID=10.5A 1.2 1 0.8 4 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 1.0E+01 ID=13.5A 1.0E+00 125°C 1.0E-01 125°C 15 IS (A) RDS(ON) (mΩ) 20 1.0E-02 10 25°C 1.0E-03 5 25°C 1.0E-04 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: March 2016 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.0 Page 3 of 5 AO4296 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 VDS=50V ID=13.5A 3500 Ciss 8 Capacitance (pF) VGS (Volts) 3000 6 4 2 2500 2000 1500 1000 500 0 0 0 10 20 30 40 50 60 0 1000.0 60 80 100 TJ(Max)=150°C TA=25°C 10µs 10µs RDS(ON) limited Power (W) 100µs 1ms 1.0 0.1 40 1000 100.0 10.0 20 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Coss Crss 10ms 100 10 TJ(Max)=150°C TA=25°C DC 0.0 0.01 0.1 1 10 100 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 1 1E-05 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=75°C/W 0.1 PDM 0.01 0.001 1E-05 Single Pulse Ton 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: March 2016 www.aosmd.com Page 4 of 5 AO4296 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.1.0: March 2016 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5