2SA1759 Transistors High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (−400V, −0.1A) 2SA1759 zDimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = −400V) 2) Low saturation voltage, typically VCE (sat)= −0.2V at IC / IB = −20mA / −2mA. 3) High switching speed, typically tf = 1µs at Ic =100mA. 4) Wide SOA (safe operating area). 5) Complements the 2SC4505. MPT3 1.5 2.5 4.0 0.5 4.5 1.6 (2) (3) 1.0 (1) 0.5 0.4 1.5 0.4 0.4 1.5 3.0 (1)Base (2)Collector (3)Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit VCBO VCEO VEBO −400 −400 −7 −0.1 V V V A(DC) −0.2 A(Pulse) Collector-base voltage Collector-emitter voltage Emitter-base voltage IC Collector current 0.5 PC Collector power dissipation Junction temperature Storage temperature W ∗2 2 150 −55 to +150 Tj Tstg ∗1 °C °C ∗1 Single pulse, Pw=100ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO −400 −400 −7 − − − − − − − − −0.2 − − − −10 V V V µA −10 −0.5 µA V hFE fT − 82 − − − 12 −1.5 180 − V − MHz Cob ton − 13 − pF VCB= −10V , IE=0A , f=1MHz − 0.7 − µs IC= −100mA RL=1.5kΩ tstg − 1.8 − µs IB1= −IB2= −10mA tf − 1 − µs VCC~ −150V Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time BVEBO ICBO IEBO Conditions IC= −50µA IC= −1mA IE= −50µA VCB= −400V VEB= −6V IC= −20mA, IB= −2mA IC= −20mA, IB= −2mA VCE= −10V , IC= −10mA VCE= −10V , IE=10mA , f=5MHz Rev.B 1/3 2SA1759 Transistors zPackaging specifications and hFE Type 2SA1759 Package hFE MPT3 P AH∗ Marking Code T100 3000 Basic ordering unit (pieces) ∗ Denotes hFE zElectrical characteristics (Ta=25°C) A −3m A m −2.5 −60 −2mA mA −1.5 −1mA −40 A −0.5m −20 1 2 3 4 −1 m A −0.7mA −80 −0.6mA −60 −0.5mA −0.4mA −40 −0.3mA −0.2mA −20 IB=0 0 0 −200 −0.8mA COLLECTOR TO EMITTER VOLTAGE : VCE (V) −50 −20 −10 −5 −2 10 20 30 40 0.4 0.6 −1 IB=−0.1mA 0 0 5 VCE=−5V −100 25°C −25°C −5mA −0.9mA Ta=100 °C −80 Ta=25°C COLLECTOR CURRENT : IC (mA) −100 Ta=25°C −3.5mA −4.5mA −4mA COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −100 −0.5 50 0 0.2 0.8 1.0 1.2 1.4 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1000 Ta=25°C 100 5V 50 20 10 5 DC CURRENT GAIN : hEF VCE=−10V 200 DC CURRENT GAIN : hEF VCE=−10V 500 500 Ta=100°C 200 −25°C 50 20 10 5 2 2 1 −0.5 −1 1 −0.5 −1 −2 −5 −10 −20 −50 −100 −200 25°C 100 −2 −5 −10 −20 −50 −100 −200 −5 −2 Ta=−25°C −1 −0.5 25°C −0.2 VBE(sat) 100°C Ta=100°C VCE(sat) −0.1 25°C −25°C −0.05 −0.02 −0.01 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage Base-emitter saturation voltage vs. Collector current 1000 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE :VCE(sat) (V) BASE SATURATION VOLTAGE :VBE(sat) (V) IC/IB=10V Ta=25°C VCE=−10V 500 200 100 50 20 10 5 2 1 0.5 1 2 5 10 20 50 Ta=25°C −5 −2 −1 −0.5 IC/IB=20 −0.2 −0.1 10 −0.05 −0.02 −0.01 −0.5 −1 −2 −5 −10 −20 −50 −100 −200 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs.collector current ( Ι ) Fig.5 DC current gain vs.collector current ( ΙΙ ) −10 −10 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 100 200 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth products vs. emitter current Fig.6 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 Ground emitter output characteristics ( Ι ) Fig.2 Ground emitter output characteristics ( ΙΙ ) Fig.3 Ground emitter propagation characteristis 1000 Ta=25°C f=1MHz IE=0A 500 200 100 50 20 10 5 2 1 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.9 Collector output capacitance vs. collector-base voltage Rev.B 2/3 2SA1759 COLLECTOR CURRENT : IC (mA) −1000 −500 −200 Pw=10ms∗ Ic Max. (Pulse∗) −100 100ms∗ DC −50 −20 −10 −5 Ta=25°C (When mounted on a −2 40×40×0.7mm ceramic board) −1 ∗Single nonrepetitive pulse −1 −2 −5 −10 −20 −50 −100 −200 TRANSIENT THERMAL RESISTANCE : Rth(°C/W) Transistors −500 −1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area RL=1.5kΩ 100000 (1)When mounted on a 40×40×0.7mm ceramic board. (2)Unmounted 10000 1000 (2) 100 (1) 10 1 0.1 0.001 0.01 1 0.1 10 100 1000 PULSE WIDTH : Pw (s) Fig.11 Transient thermal resistance IB2 Base current waveform IB2 TUT VCC=−150V Collector current waveform 10% IC 90% VBB ton tstg tf Fig.12 Switching characteristics mesurement circuits Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1