QBH 855

Model # QBH-855
RF/Microwave Amplifier
Features
• Frequency Range: 10 – 100 MHz
• Low Noise Figure: 1.9 dB
• Environmental Screening Available
Technical Specifications
Absolute Maximum (No Damage) Ratings
Sustained Voltage (Vdc)
+17 volts
Pulsed (Transient) Voltage (V)
+17 volts
Operating Temperature
-55 to +125 °C
Storage Temperature
-65 to +150 °C
2.6 Max.
Maximum Input Drive (Vrms)
+1.1
+15
+13 Min.
Thermal Rise, Junction-Case
+30 °C
3rd Order Intercept (dBm)
+27
---
2nd Order Intercept (dBm)
+40
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Reverse Isolation (dB)
55
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In
1.3:1
2.0:1
Out
1.2:1
1.5:1
DC Current (mA)
+35
+40
DC Voltage (V)
+15
+15
Typical
+25 ºC
Min/Max
55ºC to +85 ºC
10 – 100 MHz
10 – 100 MHz
39
37 Min.
Gain Flatness (dB)
+/- 0.6
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Noise Figure (dB)
1.9
Power Out (dBm)
Characteristic
Frequency (MHz)
Gain (dB)
VSWR
Note:
•
•
•
Specifications are guaranteed when tested in a 50 Ohm system.
Specifications indicated as typical are not guaranteed.
Outline drawing below to be used for reference only.
Outline Drawing (TO-8)
Linear S-Parameter Data
Rev Date: 7/24/2014
© API Technologies Corp. Proprietary Information
Page # 1
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www.apitech.com
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micro.apitech.com
|
+1.888.553.7531
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[email protected]
Model # QBH-855
Typical Performance Data
Rev Date: 7/24/2014
© API Technologies Corp. Proprietary Information
Page # 2
|
www.apitech.com
|
micro.apitech.com
|
+1.888.553.7531
|
[email protected]