2SB1690 Transistors General purpose amplification(−12V, −2A) 2SB1690 zApplications Low frequency amplifier Deiver zExternal dimensions (Unit : mm) TSMT3 1.0MAX zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. −180mV at IC= −1A / IB= −50mA 2.9 0.85 0.4 0.7 1.6 2.8 (3) 0.3~0.6 0~0.1 (2) (1) 0.95 0.95 1.9 0.16 (1) Base (2) Emitter Each lead has same dimensions (3) Collector zPackaging specifications Package Type Taping Code TL Basic ordering unit (pieces) 3000 2SB1690 zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO −15 V Collector-emitter voltage VCEO −12 V Emitter-base voltage VEBO −6 V IC −2 A ICP −4 A ∗1 0.5 W ∗2 1 W ∗3 Parameter Collector current Collector power dissipation PC Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Single pulse Pw=1ms ∗2 Each terminal mounted on a recommended land ∗3 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −15 − − V IC=−10µA Collector-emitter breakdown viltage BVCEO −12 − − V IC=−1mA Emitter-base breakdown voltage BVEBO −6 − − V IE=−10µA ICBO − − −100 nA VCB=−15V VEB=−6V Parameter Collector cutoff current Emitter cutoff current Collerctor-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Pulsed IEBO − − −100 nA VCE(sat) − −120 −180 mV hFE 270 − 680 − fT − 360 − MHz Cob − 15 − pF Conditions IC=−1A, IB=−50mA VCE=−2V, IC=−200mA ∗ VCE=−2V, IE=200mA, f=100MHz∗ VCB=−10V, IE=0mA, f=1MHz Rev.B 1/2 2SB1690 Transistors BASE SATURATION VOLTAGE : VBE(sat) : (V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) DC CURRENT GAIN : hFE 10 VCE=−2V PULSED Ta=100°C 25°C −40°C 100 0.001 0.01 0.1 1 10 1 0.1 0.01 0.001 0.001 TRANSITION FREQUENCY : fT : (MHz) COLLECTOR CURRENT IC : (A) 0.1 1 10 Ta=100°C 25°C −40°C 0.1 0.01 0.001 1 0.1 IC/IB=50/1 IC/IB=20/1 IC/IB=10/1 0.01 0.001 0.001 BASE TO EMITTER VOLTAGE : VBE (V) 0.1 1 1 10 IC=20 IB1=-20IB2 Ta=25°C tstg f=100MHz 10 EMITTER CURRENT : IE (A) Fig.4 Grounded emitter propagation characteristics 0.1 1000 100 0.01 0.01 Fig.3 Collector-emitter saturation voltage vs. collector current Ta=25°C VCE=−2V f=100MHz 10 0.001 Ta=25°C PULSED COLLECTOR CURRENT : IC (A) 1000 1 EMITTER INPUT CAPACITANCE:Cib (pF) COLLECTOR OUTPUT CAPACITANCE:Cob(pF) 0.01 Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs.collector current VCE=−2V PULSED 0.5 Ta=100°C 1 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current 0 −40°C 25°C Ta=100°C 25°C −40°C COLLECTOR CURRENT : IC (A) 10 IC/IB=20 PULSED SWITCHING TIME : (ns) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat): (V) zElectrical characteristic curves Fig.5 Gain bandwidth product vs. emitter current tr 100 tf tdon 10 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.6 Switching time 1000 Ta=25°C IE=0mA f=1MHz cib 100 cob 10 0.1 1 10 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.B 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1