RB411D Diodes Schottky barrier diode RB411D zApplications Low current rectification zExternal dimensions (Unit : mm) zLand size figure (Unit : mm) 1.9 0.4 ＋0.1 －0.05 2.9±0.2 各リードとも Each lead has same dimension 同寸法 1.0MIN. ＋0.2 1.6－0.1 2.8±0.2 0.95 ＋0.1 0.15－0.06 (3) 2.4 zFeatures 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 0.8MIN. 0～0.1 (1) 0.95 zConstruction Silicon epitaxial planar 0.8±0.1 0.95 SMD3 0.3～0.6 (2) zStructure 1.1±0.2 0.01 1.9±0.2 ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code zTaping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 3.2±0.1 3.5±0.05 3.2±0.1 5.5±0.2 0～0.5 φ1.05MIN 4.0±0.1 3.2±0.1 8.0±0.2 1.75±0.1 4.0±0.1 1.35±0.1 zAbsolute maximum ratings (Ta = 25°C) Sym bol Lim its Unit R evers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current（ *1 ） VRM VR Io 40 20 500 V V mA Forward current s urge peak （ 60Hz・ 1cyc ）（ *1 ） J unction tem perature S torage tem perature IFSM Tj Ts tg 3 125 -40 to +125 ℃ Param eter A ℃ (*1) Rating of per diode zElectrical characteristics (Ta = 25°C) Param eter Forwarad voltage Sym bol Min. Typ. Max. Unit VF 1 - - 0.50 V Conditions IF =500m A VF 2 - - 0.30 V IF =10m A Revers e current IR 1 - - 30 µA VR =10V Capacitance between term inal Ct1 - 20 - pF VR =10V , f=1MHz Rev.B 1/3 RB411D Diodes zElectrical characteristic curves (Ta = 25°C) 1000 10000 Ta=25℃ 100 Ta=125℃ f=1MHz Ta=75℃ Ta=-25℃ 10 1 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 100 200 300 400 500 1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 30 250 420 410 400 AVE:405.6mV σ:3.0258mV 390 240 230 220 210 AVE:402.4mV 16 14 12 10 8 6 4 0 VF DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP 30 20 22 21 20 19 18 AVE:18.35pF 1cyc Ifsm 15 8.3ms 10 5 AVE:5.70A 16 20 15 10 5 AVE:6.20ns 0 15 0 Ct DISPERSION MAP trr DISPERSION MAP IFSM DISRESION MAP 10 15 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 1cyc 5 1000 Ifsm t 10 5 0 0 1 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 RESERVE RECOVERY TIME:trr(ns) 23 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ f=1MHz VR=0V n=10pcs 24 17 AVE:4.67uA 2 200 25 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 30 Ta=25℃ VR=10V n=30pcs 18 AVE:218.0mV 380 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 Ta=25℃ IF=10mA n=30pcs REVERSE CURRENT:IR(uA) Ta=25℃ IF=500mA n=30pcs FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 430 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 0.1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD CURRENT:IF(mA) 100 REVERSE CURRENT:IR(uA) 1000 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board 10 IM=1mA 1ms IF=10mA time 300us 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1000 1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS Rev.B 1000 2/3 RB411D Diodes D=1/2 0.3 Sin(θ＝180) DC 0.2 0.1 0.0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.4 FORWARD POWER DISSIPATION:Pf(W) 1.5 0.2 0.5 0.15 0.1 D=1/2 DC Sin(θ＝180) 0.05 1 Io t DC T VR D=t/T VR=10V Tj=125℃ D=1/2 0.5 Sin(θ＝180) 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0A 0V 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.5 Io 0A 0V t 1 DC T VR D=t/T VR=10V Tj=125℃ D=1/2 0.5 Sin(θ＝180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1