RENESAS BCR08AM-14A-A6

BCR08AM-14A
Triac
Low Power Use
REJ03G1200-0200
Rev.2.00
Nov 30, 2007
Features
•
•
•
•
IT (RMS) : 0.8 A
VDRM : 700 V
IFGT I, IRGT I, IRGT III : 5 mA
Planar Passivation Type
Outline
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
3
2
Applications
Washing machine, electric fan, air cleaner, other general purpose control applications
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
REJ03G1200-0200
Page 1 of 6
Rev.2.00
Nov 30, 2007
VDRM
VDSM
Voltage class
14
700
840
Unit
V
V
BCR08AM-14A
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
0.8
Unit
A
Surge on-state current
ITSM
8
A
I2 t
0.26
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
1
0.1
6
0.5
– 40 to +125
– 40 to +125
0.23
W
W
V
A
°C
°C
g
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
1.0
2.0
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 67°C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Unit
mA
V
Ι
VFGTΙ
—
—
2.0
V
ΙΙ
VRGTΙ
—
—
2.0
V
ΙΙΙ
VRGTΙΙΙ
—
—
2.0
V
Gate trigger voltageNote2
Test conditions
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 1.2 A,
Instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
IFGTΙ
—
—
5
mA
ΙΙ
IRGTΙ
—
—
5
mA
ΙΙΙ
IRGTΙΙΙ
—
—
5
mA
VGD
Rth (j-c)
0.1
—
—
—
—
50
V
°C/W
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
0.5
—
—
V/µs
Tj = 125°C
Note2
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.4 A/ms
3. Peak off-state voltage
VD = 400 V
REJ03G1200-0200
Page 2 of 6
Rev.2.00
Nov 30, 2007
Commutating voltage and current waveforms
(inductive load)
Supply
Voltage
Main
Current
Main
Voltage
(dv/dt)c
Time
(di/dt)c
Time
Time
VD
BCR08AM-14A
Performance Curves
Rated Surge On-State Current
Maximum On-State Characteristics
10
Tc = 25°C
9
Surge On-State Current (A)
On-State Current (A)
101
7
5
3
2
100
7
5
3
2
8
7
6
5
4
3
2
1
1.5
2.0
2.5
3.0
3.5
100
7
5
3
2
10–1
7
5
3
5 7 102
Gate Trigger Current vs.
Junction Temperature
VGM = 6V
103
7
5
Typical Example
PGM = 1W
PG(AV) =
0.1W
VGT
IGM =
0.5A
IFGT I, IRGT I, IRGT III
VGD = 0.1V
3 5 7 101 2 3
5 7 102 23
5 7103
3
2
102
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
Gate Trigger Voltage vs.
Junction Temperature
103
7
5
Typical Example
3
2
102
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Rev.2.00
Nov 30, 2007
102 2 3 5 7 103 2 3 5 7104 2 3 5 7105
3
Transient Thermal Impedance (°C/W)
100 (%)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
2 3
Gate Characteristics
Gate Current (mA)
REJ03G1200-0200
Page 3 of 6
5 7 101
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
7
5
3
2
2 3
On-State Voltage (V)
3
2
101
0
100
4.0
100 (%)
10–1
1.0
2
Junction to ambient
102
7
5
Junction to case
3
2
101
7
5
3
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
BCR08AM-14A
Allowable Case Temperature vs.
RMS On-State Current
2.0
160
1.8
140
1.6
1.4
1.2
1.0
0.8
0.6
360°
Conduction
Resistive,
inductive loads
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Case Temperature (°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
120
100
80
60
40
20
0
1.4
Curves apply regardless of
conduction angle
360°
Conduction
Resistive,
inductive loads
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
160
Ambient Temperature (°C)
140
120
Curves apply regardless
of conduction angle
Natural Convection
No Fins
100
80
360°
Conduction
Resistive,
inductive loads
60
40
20
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
RMS On-State Current (A)
100 (%)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
105
7 Typical Example
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature
100 (%)
Holding Current vs.
Junction Temperature.
103
7
5
Laching Current (mA)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C)
2
102
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature
REJ03G1200-0200
Page 4 of 6
Laching Current vs.
Junction Temperature
Typical Example
3
Rev.2.00
(°C)
Nov 30, 2007
(°C)
102
7
5
3
2
Distribution
T2+, G–
Typical Example
101
7
5
3
2
100
7 + +
5 T2 , G
3 Typical
2 Example
10–1
–40
0
T2– , G–
Typical Example
40
80
120
Junction Temperature
(°C)
160
BCR08AM-14A
100 (%)
160
Typical Example
140
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs)
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
Typical Example
Tj = 125°C
140
120
100
80
I Quadrant
III Quadrant
60
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Gate Trigger Current vs.
Gate Current Pulse Width
100 (%)
Commutation Characteristics
Conditions
VD = 200V
IT = 1A
τ = 500µs
Tj = 125°C
3
2
Minimum
Characteristics
Value
3
2
2
5 7 100
3
I Quadrant
2
3
6
A
Test Procedure I
V
Test Procedure II
6
A
6V
V
RG
Test Procedure III
Rev.2.00
A
6V
RG
V
Nov 30, 2007
RGT III
III
IIRGT
102
7
5
IFGT I
IRGT I
3
2
2 3
5 7 101
2 3
5 7 102
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6V
Typical Example
2
101 0
10
5 7 101
Rate of Decay of On-State
Commutating Current (A/ms)
6
103
7
5
3
III Quadrant
100
7
5
REJ03G1200-0200
Page 5 of 6
160
Rate Of Rise Of Off-State Voltage (V/µs)
101
7 Typical Example
5
10–1
10–1
Breakover Voltage vs.
Rate Of Rise Of Off-State Voltage
Junction Temperature (°C)
Gate Trigger Current (tw)
Gate Trigger Current (DC)
Critical Rate Of Rise Of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
100 (%)
Breakover Voltage vs.
Junction Temperature
RG
BCR08AM-14A
Package Dimensions
Package Name
TO-92*
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003EA-A
Previous Code

MASS[Typ.]
0.23g
Unit: mm
φ5.0Max
11.5Min
5.0Max
4.4
1.25 1.25
3.6
1.1
Circumscribed circle φ0.7
Order Code
Lead form
Straight type
Lead form
Form A8
Standard packing
Vinyl sack
Vinyl sack
Taping
Quantity
500
500
2000
Standard order code
Type name
Type name – Lead forming code
Type name – TB
Note : Please confirm the specification about the shipping in detail.
REJ03G1200-0200
Page 6 of 6
Rev.2.00
Nov 30, 2007
Standard order
code example
BCR08AM-14A
BCR08AM-14A-A6
BCR08AM-14A-TB
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