2N4851-2N4853 PN UNIJUNCTION TRANSISTOR High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit PD 300 mW RMS emitter current Ie 50 mA Peak-pulse emitter current ie 1.5 Amp Emitter reverse voltage VB2E 30 Volts Interbase voltage VB2B1 35 Volts Operating junction temperature range TJ -65 to +125 °C Storage temperature range Tstg -65 to +200 °C RMS power dissipation ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Rating Intrinsic standoff ratio (VB2B1 = 10 V) Part number Symbol Min Typ Max Unit η 0.56 0.70 - 0.75 0.85 - RBB 4.7 - 9.1 kΩ 2N4851, 2N4852 2N4853 IEB2O - - 2N4851, 2N4852 2N4853 IP - - 2 0.4 2.0 4.0 6.0 - - VOB1 3.0 5.0 6.0 - - Volts f(max) - 0.25 - MHz 2N4851 2N4852, 2N4853 Interbase resistance (VB2B1 = 3 V, IE = 0) Emitter reverse current (VB2E = 30 V) Peak point emitter current (VB2B1 = 25 V) Valley point current (VB2B1 = 20 V, RB2 = 100Ω) Base one peak pulse voltage (V1 = 20V) Maximum frequency of oscillation 2N4851 2N4852 2N4853 2N4851 2N4852 2N4853 IV 100 50 nA µA mA Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N4851-2N4853 PN UNIJUNCTION TRANSISTOR MECHANICAL CHARACTERISTICS Case TO-18 Marking Alpha-numeric Pin out See below Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N4851-2N4853 PN UNIJUNCTION TRANSISTOR Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N4851-2N4853 PN UNIJUNCTION TRANSISTOR Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N4851-2N4853 PN UNIJUNCTION TRANSISTOR Rev. 20150306