Product Data Sheet STW9Q14B – Mid-Power LED Enabling the best lm/W in Mid Power Range Mid-Power LED - 5630 Series STW9Q14B (Neutral, Warm) RoHS Product Brief Description Features and Benefits • This White Colored surface-mount LED comes in standard package dimension. Package Size: 5.6x3.0x0.9mm • It has a substrate made up of a molded plastic reflector sitting on top of a lead frame. • • • • • The die is attached within the reflector cavity and the cavity is encapsulated by silicone. • Market Standard 5630 Package Size High Color Quality, CRI Min. 90 Wide CCT range 2600~4500K RoHS compliant Key Applications • • • • The package design coupled with careful selection of component materials allow these products to perform with high reliability. Interior lighting General lighting Indoor and outdoor displays Architectural / Decorative lighting Table 1. Product Selection Table CCT Part Number Color Min. Typ. Max. STW9Q14B Neutral White 3700K 4200K 4500K STW9Q14B Warm White 2600K 3000K 3700K Rev2.1, Dec 1, 2015 1 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Table of Contents Index • Product Brief 1 • Table of Contents 2 • Performance Characteristics 3 • Characteristics Graph 5 • Color Bin Structure 11 • Mechanical Dimensions 16 • Material Structure 17 • Recommended Solder Pad 18 • Reflow Soldering Characteristics 19 • Emitter Tape & Reel Packaging 20 • Product Nomenclature 22 • Handling of Silicone Resin for LEDs 23 • Precaution For Use 24 • Company Information 26 Rev2.1, Dec 1, 2015 2 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Performance Characteristics Table 2. Electro Optical Characteristics, IF=100mA, Tj=25ºC, RH30% Part Number CCT (K) [1] 4000 STW8Q14BE 3500 3000 2700 Luminous Flux [3] CRI IV (cd) ФV (lm) Ra RANK Typ. 4500 Luminous Intensity [2] Min Max Min Max Min. S0 9.0 9.5 27.6 29.1 90 S5 T0 T5 U0 9.5 10.0 10.5 11.0 10.0 10.5 11.0 11.7 29.1 30.6 32.1 33.6 30.6 32.1 33.6 35.7 90 90 90 90 S0 S5 9.0 9.5 9.5 10.0 27.6 29.1 29.1 30.6 90 90 T0 10.0 10.5 30.6 32.1 90 T5 10.5 11.0 32.1 33.6 90 U0 11.0 11.7 33.6 35.7 90 S0 9.0 9.5 27.0 28.5 90 S5 9.5 10.0 28.5 30.0 90 T0 10.0 10.5 30.0 31.5 90 T5 10.5 11.0 31.5 33.0 90 U0 11.0 11.7 33.0 35.1 90 R5 8.5 9.0 25.5 27.0 90 S0 9.0 9.5 27.0 28.5 90 S5 9.5 10.0 28.5 30.0 90 T0 10.0 10.5 30.0 31.5 90 R5 8.5 9.0 25.5 27.0 90 S0 9.0 9.5 27.0 28.5 90 S5 9.5 10.0 28.5 30.0 90 Notes : (1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. (2) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. (3) The lumen table is only for reference. Rev2.1, Dec 1, 2015 3 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Performance Characteristics Table 3. Absolute Maximum Ratings, IF=100mA, Tj= 25ºC, RH30% Value Parameter Symbol Unit Min. Typ. Max. Forward Current IF - 100 160 mA Forward Voltage[1] VF (100mA) 2.9 3.2 3.4 V Reverse Voltage Vr - 0.9 1.2 V Luminous Intensity (4,000 K) [1] Iv (100mA) - 9.5 (28.5) - cd (lm) Ra 90 - 100 - [1] Color Rendering Index Viewing Angle [2] 2Θ1/2 120 Power Dissipation Pd - - 560 mW Junction Temperature Tj - - 125 ºC Operating Temperature Topr - 40 - + 85 ºC Storage Temperature Tstg - 40 - + 100 ºC RθJ-S - 18 - ℃/W - - - 5000 V Thermal resistance (J to ESD Sensitivity(HBM) S) [3] [4] Notes : (1) Tolerance : VF :±0.1V, IV :±7%, Ra :±2, x,y :±0.005 (2) Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity (3) Thermal resistance : RthJS (Junction / solder) (4) A zener diode is included for ESD Protection. • • LED’s properties might be different from suggested values like above and below tables if operation condition will be exceeded our parameter range. Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. All measurements were made under the standardized environment of Seoul Semiconductor. Rev2.1, Dec 1, 2015 4 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Characteristics Graph Fig 1. Color Spectrum, IF=100mA, Tj = 25ºC, RH30% Relative Emission Intensity 1.0 0.5 0.0 300 400 500 600 700 800 Wavelength [nm] Fig 2. Viewing Angle Distribution, Ta=25℃ 0 30 -30 60 -60 90 -90 Rev2.1, Dec 1, 2015 5 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Characteristics Graph Fig 3. Forward Voltage vs. Forward Current, Tj=25ºC Forward Current(mA) 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward Voltage [V] Fig 4. Forward Current vs. Relative Luminous Flux, Tj=25ºC 1.6 Relative Luminous Flux 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 Forward Current [mA] Rev2.1, Dec 1, 2015 6 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Characteristics Graph Fig 5. Forward Current vs. CIE X, Y Shift, Tj = 25ºC (2600K~3200K) 0.402 0.400 20mA 0.398 y 60mA 100mA 150mA 0.396 200mA 0.394 0.392 0.408 0.409 0.410 0.411 0.412 0.413 0.414 x Rev2.1, Dec 1, 2015 7 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Characteristics Graph Fig 6. Relative Light Output vs. Junction Temperature, IF=100mA 1.2 Relative Luminousity Flux 1.0 0.8 0.6 0.4 0.2 0.0 25 50 75 100 125 o Junction Temperature Ta[ C] Fig 7. Junction Temperature vs. Relative Forward Voltage, IF=100mA 1.2 Forward Voltage [V] 1.0 0.8 0.6 0.4 0.2 0.0 20 40 60 80 100 120 o Junction Temperature Ta[ C] Rev2.1, Dec 1, 2015 8 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Characteristics Graph Fig 8. Chromaticity Coordinate vs. Junction Temperature, IF=100mA (2600K~3200K) 0.412 0.408 25 0.404 y 45 65 0.400 85 105 125 0.396 0.392 0.416 0.417 0.418 0.419 0.420 0.421 0.422 x Rev2.1, Dec 1, 2015 9 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Characteristics Graph Fig 9. Maximum Forward Current vs. Ambient Temperature 200 180 Forward Current IF[mA] 160 140 o RthJ-A=100 C/W 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 O Ambient temperature Ta( C) Rev2.1, Dec 1, 2015 10 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Color Bin Structure Table 4. Bin Code description, IF = 100mA Color Chromaticity Coordinate Luminous Intensity (cd) Part Number STW8Q14BE Bin Code Min. Max. R5 8.5 S0 Typical Forward Voltage (Vf) Bin Code Min. Max. 9.0 Y3 2.9 3.0 9.0 9.5 Z1 3.0 3.1 S5 9.5 10.0 Z2 3.1 3.2 T0 10.0 10.5 Z3 3.2 3.3 T5 10.5 11.0 A1 3.3 3.4 U0 11.0 11.7 A2 3.4 3.5 U7 11.7 12.5 Refer to page.12 Table 5. Intensity rank distribution CCT CIE IV Rank 4,200 ~ 4,700K D R5 S0 S5 T0 T5 U0 U7 3,700 ~ 4,200K E R5 S0 S5 T0 T5 U0 U7 3,200 ~ 3,700K F R5 S0 S5 T0 T5 U0 U7 2,900 ~ 3,200K G R5 S0 S5 T0 T5 U0 U7 2,600 ~ 2,900K H R5 S0 S5 T0 T5 U0 U7 Available ranks *Notes : (1) All measurements were made under the standardized environment of Seoul Semiconductor In order to ensure availability, single color rank will not be orderable. Rev2.1, Dec 1, 2015 11 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram, IF = 100mA, Tj=25ºC 0.46 0.44 2700K 2900K H0 3200K G1 3500K 3700K CIE Y H1 3000K 0.42 2600K 0.40 4000K 4200K 0.38 D1 D3 0.36 F3 E2 G4 F2 E0 G3 G2 F0 H3 H2 F1 E1 4500K G0 G5 H4 H5 F5 E3 F4 E5 E4 D5 0.34 0.32 0.36 0.38 0.40 0.42 0.44 0.46 0.48 0.50 CIE X *Notes : • Energy Star binning applied to all 2600~7000K. • Measurement Uncertainty of the Color Coordinates : ± 0.005 Rev2.1, Dec 1, 2015 12 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram, IF = 100mA, Tj = 25ºC 4200K 4700K 0.38 D1 CIE Y D3 0.36 D5 0.34 0.34 0.36 0.38 CIE X D1 D3 D5 CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3641 0.3804 0.3625 0.3711 0.3608 0.3616 0.3625 0.3711 0.3608 0.3616 0.359 0.3521 0.3714 0.3775 0.3692 0.3677 0.367 0.3578 0.3736 0.3874 0.3714 0.3775 0.3692 0.3677 Rev2.1, Dec 1, 2015 13 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram, IF = 100mA, Tj = 25ºC 0.42 3200K 3500K 3700K 0.40 4000K F0 F3 E1 4200K CIE Y F1 E0 F2 F5 E3 0.38 F4 E2 E5 E4 0.36 0.36 0.37 0.38 0.39 0.40 0.41 0.42 0.43 CIE X E0 E1 E2 CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3736 0.3874 0.3869 0.3958 0.3714 0.3775 0.3714 0.3775 0.3842 0.3855 0.3692 0.3677 0.3842 0.3855 0.397 0.3935 0.3813 0.3751 0.3869 0.3958 0.4006 0.4044 0.3842 0.3855 E3 E4 E5 CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3842 0.3855 0.3692 0.3677 0.3813 0.3751 0.3813 0.3751 0.367 0.3578 0.3783 0.3646 0.3934 0.3825 0.3783 0.3646 0.3898 0.3716 0.397 0.3935 0.3813 0.3751 0.3934 0.3825 CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3996 0.4015 0.4146 0.4089 0.396 0.3907 0.396 0.3907 0.4104 0.3978 0.3925 0.3798 0.4104 0.3978 0.4248 0.4048 0.4062 0.3865 0.4146 0.4089 0.4299 0.4165 0.4104 0.3978 CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4104 0.3978 0.3925 0.3798 0.4062 0.3865 0.4062 0.3865 0.3889 0.369 0.4017 0.3751 0.4198 0.3931 0.4017 0.3751 0.4147 0.3814 0.4248 0.4048 0.4062 0.3865 0.4198 0.3931 F0 F1 F3 Rev2.1, Dec 1, 2015 F2 F4 14 F5 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram, IF = 100mA, Tj = 25ºC 0.44 2500K 2700K 2900K 3000K 0.42 H1 H0 3200K G1 CIE Y G0 H3 H2 G3 G2 0.40 H5 H4 G5 G4 0.38 0.42 0.44 0.46 0.48 CIE X G0 G1 G2 CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4299 0.4165 0.443 0.4212 0.4248 0.4048 0.4248 0.4048 0.4374 0.4093 0.4198 0.3931 0.4374 0.4093 0.4499 0.4138 0.4317 0.3973 0.443 0.4212 0.4562 0.426 0.4374 0.4093 G3 G4 G5 CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4374 0.4093 0.4198 0.3931 0.4317 0.3973 0.4317 0.3973 0.4147 0.3814 0.4259 0.3853 0.4436 0.4015 0.4259 0.3853 0.4373 0.3893 0.4499 0.4138 0.4317 0.3973 0.4436 0.4015 CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4562 0.426 0.4687 0.4289 0.4499 0.4138 0.4499 0.4138 0.462 0.4166 0.4436 0.4015 0.462 0.4166 0.474 0.4194 0.4551 0.4042 0.4687 0.4289 0.481 0.4319 0.462 0.4166 CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.462 0.4166 0.4436 0.4015 0.4551 0.4042 0.4551 0.4042 0.4373 0.3893 0.4483 0.3919 0.4666 0.4069 0.4483 0.3919 0.4593 0.3944 0.474 0.4194 0.4551 0.4042 0.4666 0.4069 H0 H1 H3 Rev2.1, Dec 1, 2015 H2 H4 15 H5 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Mechanical Dimensions Top View Bottom View *[1] Cathode Mark 1.9±0.1 A C N.C 0.95±0.15 3.00 N.C 5.60 Slug 0.20 Side View Circuit Cathode Anode 1 2 0.90 ESD Protection Device (1) All dimensions are in millimeters. (2) Scale : none (3) Undefined tolerance is ±0.1mm (4) The LED package has two Cathode Marks. Rev2.1, Dec 1, 2015 *[1] 16 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Material Structure Parts No. Name Description Materials ① LEAD FRAME Metal Copper Alloy (Silver Plated) ② Chip Source Blue LED GaN on Sapphire ③ Wire Metal Gold Wire ④ Encapsulation Silicone +Phosphor ⑤ Body Thermo Plastic Heat-resistant Polymer ⑥ Zener Diode Si - Rev2.1, Dec 1, 2015 17 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Recommended Solder Pad Notes : (1) All dimensions are in millimeters. (2) Scale : none (3) This drawing without tolerances are for reference only. (4) Undefined tolerance is ±0.1mm. Rev2.1, Dec 1, 2015 18 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Reflow Soldering Characteristics IPC/JEDEC J-STD-020 Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (Tsmax to Tp) 3° C/second max. 3° C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (Tsmin to Tsmax) (ts) 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183 °C 60-150 seconds 217 °C 60-150 seconds Peak Temperature (Tp) 215℃ 260℃ Time within 5°C of actual Peak Temperature (tp)2 10-30 seconds 20-40 seconds Ramp-down Rate 6 °C/second max. 6 °C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Caution (1) Reflow soldering is recommended not to be done more than two times. In the case of more than 24 hours passed soldering after first, LEDs will be damaged. (2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable, suitable tools must be used. (3) Die slug is to be soldered. (4) When soldering, do not put stress on the LEDs during heating. (5) After soldering, do not warp the circuit board. Rev2.1, Dec 1, 2015 19 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Emitter Tape & Reel Packaging 15.4±1.0 180 13±0.3 60 2 22 13 ( Tolerance: ±0.2, Unit: mm ) (1) Quantity : Max 3,500pcs/Reel (2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm (3) Adhesion Strength of Cover Tape Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape at the angle of 10˚ to the carrier tape. (4) Package : P/N, Manufacturing data Code No. and Quantity to be indicated on a damp proof Package. Rev2.1, Dec 1, 2015 20 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Emitter Tape & Reel Packaging Reel Aluminum Bag Outer Box * Please refer to the next page for the 'Labeling Information' and 'Product Nomenclature'. Rev2.1, Dec 1, 2015 21 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Product Nomenclature Table 6. Part Numbering System : X1X2X3X4X5X6X7X8X9 Part Number Code Description Part Number Value X1 Company S X2 Top View LED series T X3X4 Color Specification W8 CRI 80 X5 Package series Q Q series X6X7 Characteristic code 14 X8X9 Revision BE Table 7. Lot Numbering System :Y1Y2Y3Y4Y5Y6Y7Y8Y9Y10–Y11Y12Y13Y14Y15Y16Y17 Lot Number Code Description Y1Y2 Year Y3 Month Y4Y5 Day Y6 Top View LED series Y7Y8Y9Y10 Mass order Y11Y12Y13Y14Y15Y16Y17 Internal Number Rev2.1, Dec 1, 2015 Lot Number 22 Value www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Handling of Silicone Resin for LEDs (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs without a silicone sealant, since the surface can also become scratched. (3) When populating boards in SMT production, there are basically no restrictions regarding the form of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector area. (4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of components. (5) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. (6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this. product with acid or sulfur material in sealed space. Rev2.1, Dec 1, 2015 23 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Precaution for Use (1) Storage To avoid the moisture penetration, we recommend store in a dry box with a desiccant . The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of RH50%. (2) Use Precaution after Opening the Packaging Use proper SMT techniques when the LED is to be soldered dipped as separation of the lens may affect the light output efficiency. Pay attention to the following: a. Recommend conditions after opening the package - Sealing - Temperature : 5 ~ 30℃ Humidity : less than RH60% b. If the package has been opened more than 4 week(MSL_2a) or the color of the desiccant changes, components should be dried for 10-12hr at 60±5℃ (3) Do not apply mechanical force or excess vibration during the cooling process to normal temperature after soldering. (4) Do not rapidly cool device after soldering. (5) Components should not be mounted on warped (non coplanar) portion of PCB. (6) Radioactive exposure is not considered for the products listed here in. (7) Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed of. (8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA (Isopropyl Alcohol) should be used. (9) When the LEDs are in operation the maximum current should be decided after measuring the package temperature. (10) The appearance and specifications of the product may be modified for improvement without notice. (11) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration. (12) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. The result can be a significant loss of light output from the fixture. Knowledge of the properties of the materials selected to be used in the construction of fixtures can help prevent these issues. (13) Attaching LEDs, do not use adhesives that outgas organic vapor. (14) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the reverse voltage is applied to LED, migration can be generated resulting in LED damage. Rev2.1, Dec 1, 2015 24 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Precaution for Use (15) LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects. a. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LEDs may cause the product to demonstrate unusual characteristics such as: - Increase in reverse leakage current Lowered turn-on voltage - Abnormal emissions from the LED at low current The following Recommendations are suggested to help minimize the potential for an ESD event: One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic Wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls - Humidity control (ESD gets worse in a dry environment) b. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) Changes to the light output of the luminaire from component failure Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred. - Damaged may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires. - This damage usually appears due to the thermal stress produced during the EOS event. c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device Rev2.1, Dec 1, 2015 25 www.seoulsemicon.com Product Data Sheet STW9Q14B – Mid-Power LED Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice. Rev2.1, Dec 1, 2015 26 www.seoulsemicon.com