DS315W

DS32W THRU DS320W
星合电子
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 3.0A
ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ
SOD-123FL
FEATURES
1.8± 0.1
１．０±0.2
Cathode Band
Top View
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
1.2± 0.25
0.10-0.30
2.8±0.2
0.6±0.25
MECHANICAL DATA
• Case: SOD-123FL
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:15mg 0.00048oz
3.7±0.2
Dimensions in millimeters
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Symbols
Parameter
DS32W
DS34W
DS36W
DS38W
DS310W
DS312W
DS315W
DS320W
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
20
40
60
80
100
120
150
200
V
Maximum RMS voltage
V RMS
14
28
42
56
70
84
105
140
V
Maximum DC Blocking Voltage
V DC
20
40
60
80
100
120
150
200
V
Maximum Average Forward Rectified Current
I F(AV)
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
I FSM
Max Instantaneous Forward Voltage at 3 A
Maximum DC Reverse Current
T a = 25°C
at Rated DC Reverse Voltage
T a =100°C
Typical Junction Capacitance 1）
Typical Thermal Resistance
2）
Operating Junction Temperature Range
Storage Temperature Range
A
3.0
80
70
A
VF
0.55
IR
0.5
10
0.3
5
mA
Cj
250
160
pF
0.70
0.85
0.95
V
RθJA
40
°C/W
Tj
-55 ~ +125
°C
T stg
-55 ~ +150
°C
1） Measured
2）
at 1MHz and applied reverse voltage of 4 V D.C.
P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas.
1
ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ　ＣＯ．，ＬＴＤ．　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ
DS32W THRU DS320W
星合电子
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 3.0A
ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ
Fig.2 Typical Reverse Characteristics
Instaneous Reverse Current ( μA)
Fig.1 Forward Current Derating Curve
Average Forward Current (A)
3.5
100LFM
3.0
2.5
2.0
1.5
1.0
Single phase half-wave 60 Hz
resistive or inductive load
0.5
0.0
25
50
75
100
125
150
10 4
DS32W/DS34W
DS36W-DS320W
10
1
T J =25°C
10 0
0
40
20
60
80
100
Percent of Rated Peak Reverse Voltage（%）
Fig.4 Typical Junction Capacitance
Fig.3 Typical Forward Characteristic
500
Junction Capacitance ( pF)
20
10
1.0
DS32W/DS34W
DS36W/DS38W
DS310W/DS312W
DS315W/DS320W
0.1
0
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
100
50
DS32W/DS34W
20
DS36W-DS320W
10
0.1
10
1
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Fig.6- Typical Transient Thermal Impedance
8.3 ms Single Half Sine Wave
(JEDEC Method)
80
60
DS32W~DS38W
DS310W~DS312W
40
20
00
1
T J =25°C
200
1.8
Transient Thermal Impedance（ °C /W）
Instaneous Forward Current (A)
T J =75°C
10 2
Ambient Temperature (°C)
Peak Forward Surage Current (A)
T J =100°C
10 3
10
100
Number of Cycles at 60Hz
200
100
10
1
0.01
0.1
1
10
100
t, Pulse Duration（sec）
2
ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ　ＣＯ．，ＬＴＤ．　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ