SS52F THRU SS520F 星合电子 Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ SMAF FEATURES Cathode Band Top View • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications 0.110(2.80) 0.094(2.40) 0.059(1.50) 0.051(1.30) 0.150(3.80) 0.128(3.25) 0.012(0.30) 0.006(0.15) 0.055(1.40) 0.035(0.90) 0.047(1.20) 0.028(0.70) MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg 0.00086oz 0.199(5.05) 0.179(4.40) Dimensions in inches and (millimeters) Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS52F SS54F SS56F SS58F SS510F SS512F SS515F SS520F Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 5.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 150 A Max Instantaneous Forward Voltage at 5 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance 1） Typical Thermal Resistance 2） 0.45 0.55 0.70 0.85 1.0 50 IR Cj Operating Junction Temperature Range Storage Temperature Range VF mA 500 800 V pF RθJA 55 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C 1） Measured 2） at 1MHz and applied reverse voltage of 4 V D.C. P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas. 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ ＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ SS52F THRU SS520F 星合电子 Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ Fig.2 Typical Reverse Characteristics Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve Average Forward Current (A) 7.0 100LFM 6.0 5.0 4.0 3.0 2.0 Single phase half-wave 60 Hz resistive or inductive load 1.0 0.0 25 50 75 100 125 150 10 4 SS54F/SS520F 10 1 T J =25°C 10 0 0 40 20 60 80 100 Percent of Rated Peak Reverse Voltage（%） Fig.4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic 1000 Junction Capacitance ( pF) 10 1.0 0.1 SS52F SS54F SS56F/SS58F SS510F/SS520F 0.01 0 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 200 100 50 SS52F/SS54F SS54F/SS520F SS56F-SS520F 20 10 0.1 10 1 100 Instaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance 8.3 ms Single Half Sine Wave (JEDEC Method) 80 60 SS54F~SS520F 40 20 00 1 T J =25°C T J =25°C 500 1.8 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) T J =75°C 10 2 Ambient Temperature (°C) Peak Forward Surage Current (A) T J =100°C 10 3 10 100 Number of Cycles at 60Hz 200 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ ＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ