S3AF THRU S3MF 星合电子 Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ Forward Current - 3 A SMAF FEATURES XH • For surface mounted applications • Low profile package • Glass Passivated Chip Juntion • Easy to pick and place • Lead free in comply with EU RoHS 2011/65/EU directives Cathode Band Top View 0.110(2.80) 0.094(2.40) 0.059(1.50) 0.051(1.30) 0.150(3.80) 0.128(3.25) 0.012(0.30) 0.006(0.15) 0.055(1.40) 0.035(0.90) 0.047(1.20) 0.028(0.70) MECHANICAL DATA • C ase: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg 0.00086oz 0.199(5.05) 0.179(4.40) Dimensions in inches and (millimeters) Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols S3AF S3BF S3DF S3GF S3JF S3KF S3MF Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at Ta = 65 °C I F(AV) 3 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 100 A Maximum Instantaneous Forward Voltage at 3 A VF 1.2 V IR 5 250 μA Cj 53 pF RθJA 13 47 °C/W Parameter Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance Typical Thermal Resistance Ta = 25 °C Ta =125 °C 1） 2） Operating and Storage Temperature Range T j , T stg -55 ~ +150 °C 1）Measured at 1 MHz and applied reverse voltage of 4 V D.C 2）Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ ＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ S3AF THRU S3MF 星合电子 Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ Forward Current - 3 A Fig.2 Typical Instaneous Reverse Characteristics Instaneous Reverse Current ( μ A) Average Forward Current (A) Fig.1 Forward Current Derating Curve 3.0 2.4 1.8 1.2 0.6 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 100 T J =150°C T J =125°C 10 T J =100°C 1.0 T J =75°C T J =50°C 0.1 T J =25°C 0.01 0 Fig.3 Typical Forward Characteristic Junction Capacitance ( pF) 2 5° C TJ = °C 00 TJ =1 50 °C 0.5 =1 800 Fig.4 Typical Junction Capacitance 1.0 TJ Instaneous Forward Current (A) 600 Instaneous Reverse Voltage (V) Ambient Temperature (°C) 0.2 0.1 0.6 400 200 100 10 T J =25°C 1 0.7 0.8 0.9 1.0 1.1 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ ＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ