S3A THRU S3M 星合电子 Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ Forward Current - 3 A FEATURES SMC-DO-214AB XHH Super fast switching time for high efficiency Low forward voltage drop and high current capability 0.245(6.22) 0.220(5.59) Low reverse leakage current Plastic material has UL flammability 0.128(3.25) 0.108(2.75) classification 94V-0 0.280(7.11) 0.260(6.60) 0.012(0.305) 0.006(0.152) MECHANICAL DATA 0.103(2.62) 0.079(2.00) Case： Molded Plastic Polarity:Color band denotes cathode 0.008(0.203) MAX 0.060(1.52) 0.030(0.76) Weight: 0.007 ounces,0.21 grams 0.320(8.13) 0.305(7.75) Mounting position: Any Dimensions in inches and (millimeters) Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols S3A S3B S3D S3G S3J S3K S3M Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at Ta = 65 °C I F(AV) 3 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 100 A Maximum Instantaneous Forward Voltage at 3 A VF 1.2 V IR 5 250 μA Cj 53 pF RθJA 13 47 °C/W Parameter Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance Typical Thermal Resistance Ta = 25 °C Ta =125 °C 1） 2） Operating and Storage Temperature Range T j , T stg -55 ~ +150 °C 1）Measured at 1 MHz and applied reverse voltage of 4 V D.C 2）Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ ＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ S3A THRU S3M 星合电子 Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ Forward Current - 3 A Fig.2 Typical Instaneous Reverse Characteristics Instaneous Reverse Current ( μ A) Average Forward Current (A) Fig.1 Forward Current Derating Curve 3.0 2.4 1.8 1.2 0.6 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 100 T J =150°C T J =125°C 10 T J =100°C 1.0 T J =75°C T J =50°C 0.1 T J =25°C 0.01 0 Fig.3 Typical Forward Characteristic Junction Capacitance ( pF) 2 5° C TJ = °C 00 TJ =1 50 °C 0.5 =1 800 Fig.4 Typical Junction Capacitance 1.0 TJ Instaneous Forward Current (A) 600 Instaneous Reverse Voltage (V) Ambient Temperature (°C) 0.2 0.1 0.6 400 200 100 10 T J =25°C 1 0.7 0.8 0.9 1.0 1.1 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ ＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ