S2M

S2A THRU S2M
星合电子
Surface Mount General Purpose Silicon Rectifiers
Reverse Voltage - 50 to 1000 V
ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ
Forward Current - 2 A
FEATURES
SMB(DO-214AA)
XHH
Super fast switching time for high efficiency
Low forward voltage drop and
high current capability
0.155(3.94)
0.130(3.30)
Low reverse leakage current
0.086(2.2)
0.075(1.91)
Plastic material has UL flammability
classification 94V-0
0.187(4.76)
0.160(4.06)
0.012(0.305)
0.006(0.152)
MECHANICAL DATA
0.096(2.44)
0.083(2.13)
Case: JEDEC SMB(DO-214AA) molded plastic body
Terminals: solder plated ,solderable per MIL-STD-750,method 2026
0.008(0.203)
MAX
0.060(1.52)
0.030(0.76)
Polarity: color band denotes cathode end
Weight: 0.003ounce,0.093 gram
0.220(5.59)
0.200(5.08)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Symbols
Parameter
S2A
S2B
S2D
S2G
S2J
S2K
S2M
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V RMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
V DC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
at Ta = 65 °C
I F(AV)
2
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
I FSM
60
A
Maximum Instantaneous Forward Voltage at 2 A
VF
1.1
V
IR
5
50
μA
Cj
30
pF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
Typical Thermal Resistance
Ta = 25 °C
Ta =125 °C
1）
2）
Operating and Storage Temperature Range
RθJA
50
T j , T stg
-55 ~ +150
°C/W
°C
1）Measured at 1 MHz and applied reverse voltage of 4 V D.C
2）Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
1
ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ　ＣＯ．，ＬＴＤ．　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ
S2A THRU S2M
星合电子
Surface Mount General Purpose Silicon Rectifiers
Reverse Voltage - 50 to 1000 V
ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ
Forward Current - 2 A
Fig.2 Typical Instaneous Reverse
Characteristics
Instaneous Reverse Current ( μ A)
Average Forward Current (A)
Fig.1 Forward Current Derating Curve
2.5
2.0
1.5
1.0
0.5
Single phase half-wave 60 Hz
resistive or inductive load
0.0
25
50
75
100
125
150
175
100
T J =150°C
T J =125°C
10
T J =100°C
1.0
T J =75°C
T J =50°C
0.1
T J =25°C
0.01
0
Fig.3 Typical Forward Characteristic
Junction Capacitance ( pF)
2 5°
C
=1
TJ
TJ =
00
50
°C
°C
1.5
=1
800
Fig.4 Typical Junction Capacitance
2.0
TJ
Instaneous Forward Current (A)
600
Instaneous Reverse Voltage (V)
Ambient Temperature (°C)
1.0
0.5
0.6
400
200
100
10
T J =25°C
1
0.7
0.8
0.9
1.0
1.1
0.1
1.0
10
100
Reverse Voltage (V)
Instaneous Forward Voltage (V)
2
ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ　ＣＯ．，ＬＴＤ．　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ