Technical Summary and Application Guidelines

Section 4: Technical Summary and
Application Guidelines
INTRODUCTION
Tantalum capacitors are manufactured from a powder of pure
tantalum metal. OxiCap® - niobium oxide capacitor is made from
niobium oxide NbO powder. The typical particle size is between
2 and 10 μm.
Figure below shows typical powders. Note the very great
difference in particle size between the powder CVs/g.
The following example uses a 220μF 6V capacitor to illustrate
the point.
C=
␧o␧r A
d
where
␧o is the dielectric constant of free space
and
(8.855 x 10-12 Farads/m)
␧r is the relative dielectric constant
= 27 for Tantalum Pentoxide
= 41 for Niobium Pentoxide
d is the dielectric thickness in meters
C is the capacitance in Farads
A is the surface area in meters
Rearranging this equation gives:
A=
4000μFV
20000μFV
50000μFV
Figure 1a. Tantalum powder
Figure 1b. Niobium Oxide powder
The powder is compressed under high pressure around a
Tantalum or Niobium wire (known as the Riser Wire) to form a
“pellet”. The riser wire is the anode connection to the capacitor.
This is subsequently vacuum sintered at high temperature
(typically 1200 - 1800°C) which produces a mechanically
strong pellet and drives off any impurities within the powder.
During sintering the powder becomes a sponge like
structure with all the particles interconnected in a huge
lattice.
This structure is of high mechanical strength and density, but
is also highly porous giving a large internal surface area (see
Figure 2).
The larger the surface area the larger the capacitance. Thus
high CV/g (capacitance voltage product per gram) powders,
which have a low average particle size, are used for low
voltage, high capacitance parts.
By choosing which powder and sinter temperature is used to
produce each capacitance/voltage rating the surface area
can be controlled.
204
Cd
␧o␧r
thus for a 220μF/6V capacitor the surface area is 346 square
centimeters, or nearly a half times the size of this page.
The dielectric is then formed over all the Tantalum or niobium
oxide surfaces by the electrochemical process of anodization.
To activate this, the “pellet” is dipped into a very weak solution
of phosphoric acid.
The dielectric thickness is controlled by the voltage applied
during the forming process. Initially the power supply is kept
in a constant current mode until the correct thickness of
dielectric has been reached (that is the voltage reaches the
‘forming voltage’), it then switches to constant voltage mode
and the current decays to close to zero.
Figure 2. Sintered Anode
Technical Summary and
Application Guidelines
The chemical equations describing the process are as
follows:
Tantalum Anode: 2 Ta → 2 Ta5+ + 10 e2 Ta5+ + 10 OH-→ Ta2O5 + 5 H2O
Niobium Oxide Anode:
2 NbO → 2 NbO3+ + 6 e2 NbO3+ + 6 OH-→ Nb2O5 + 3 H2O
Cathode:
Tantalum:
10 H2O – 10 e → 5H2 + 10 OHNiobium Oxide:
6 H2O – 6 e- → 3H2 + 6 OHThe oxide forms on the surface of the Tantalum or Niobium
Oxide but it also grows into the material. For each unit of
oxide two thirds grows out and one third grows in. It is for
this reason that there is a limit on the maximum voltage rating of Tantalum & Niobium Oxide capacitors with present
technology powders (see Figure 3).
The dielectric operates under high electrical stress. Consider
a 220μF 6V part:
Formation voltage
=
=
=
Formation Ratio x Working Voltage
3.5 x 6
21 Volts
Tantalum:
The pentoxide (Ta2O5) dielectric grows at a rate of
1.7 x 10-9 m/V
Dielectric thickness (d)
= 21 x 1.7 x 10-9
= 0.036 μm
Electric Field strength
= Working Voltage / d
= 167 KV/mm
Niobium Oxide:
The niobium oxide (Nb2O5) dielectric grows at a rate of
2.4 x 10-9 m/V
Dielectric thickness (d)
= 21 x 2.4 x 10-9
= 0.050 μm
Electric Field strength
= Working Voltage / d
= 120 KV/mm
The next stage is the production of the cathode plate.
This is achieved by pyrolysis of Manganese Nitrate into
Manganese Dioxide.
The “pellet” is dipped into an aqueous solution of nitrate and
then baked in an oven at approximately 250°C to produce
the dioxide coat. The chemical equation is:
Mn (NO3)2 → MnO2 + 2NO2 –
This process is repeated several times through varying
specific densities of nitrate to build up a thick coat over
all internal and external surfaces of the “pellet”, as shown in
Figure 4.
Tantalum
Dielectric
Oxide Film
Manganese
Dioxide
Figure 4. Manganese Dioxide Layer
The “pellet” is then dipped into graphite and silver to
provide a good connection to the Manganese Dioxide
cathode plate. Electrical contact is established by deposition
of carbon onto the surface of the cathode. The carbon
is then coated with a conductive material to facilitate connection
to the cathode termination (see Figure 5). Packaging is carried
out to meet individual specifications and customer requirements. This manufacturing technique is adhered to for the whole
range of AVX Tantalum capacitors, which can be subdivided into
four basic groups: Chip / Resin dipped / Rectangular boxed /
Axial.
Further information on production of Tantalum Capacitors
can be obtained from the technical paper “Basic Tantalum
Technology”, by John Gill, available from your local AVX
representative.
Tantalum
Dielectric
Oxide Film
Figure 3. Dielectric layer
Anode
Manganese
Dioxide
Graphite
Outer
Silver Layer
Silver
Epoxy
Cathode
Connection
Figure 5. Cathode Termination
205
Technical Summary and
Application Guidelines
SECTION 1
ELECTRICAL CHARACTERISTICS AND EXPLANATION OF TERMS
1.1 CAPACITANCE
1.2 VOLTAGE
1.1.1 Rated capacitance (CR).
1.2.1 Rated d.c. voltage (VR).
This is the nominal rated capacitance. For tantalum and
OxiCap® capacitors it is measured as the capacitance of the
equivalent series circuit at 25°C using a measuring bridge
supplied by a 0.5V rms 120Hz sinusoidal signal, free of harmonics with a bias of 2.2Vd.c.
1.1.2 Capacitance tolerance.
This is the permissible variation of the actual value of the
capacitance from the rated value. For additional reading,
please consult the AVX technical publication “Capacitance
Tolerances for Solid Tantalum Capacitors”.
1.1.3 Temperature dependence of capacitance.
TYPICAL CAPACITANCE vs. TEMPERATURE
20
NOS Series
Capacitance (%)
15
OxiCap®
10
5
MAXIMUM CATEGORY
VOLTAGE vs. TEMPERATURE
120
100
Tantalum
THJ Series
80
60
OxiCap®
40
NOS Series
20
0
75
THJ Series
85
95
105
115
150
125
175
Temperature (°C)
Tantalum
-5
1.2.3 Surge voltage (VS).
-10
-20
-50
-25
0
25
50
75
100
125
150
175
Temperature (°C)
1.1.4 Frequency dependence of the capacitance.
The effective capacitance decreases as frequency increases.
Beyond 100kHz the capacitance continues to drop until resonance is reached (typically between 0.5 - 5MHz depending
on the rating). Beyond the resonant frequency the device
becomes inductive.
TAJE227K010
CAPACITANCE vs. FREQUENCY
250
Capacitance (F)
This is the maximum voltage that may be applied continuously to a capacitor. It is equal to the rated voltage up to
+85°C (up to 40°C for TLJ, TLN, NLJ series), beyond which
it is subject to a linear derating, to 2/3 VR at 125°C for tantalum and 2/3 VR at 105°C for OxiCap®.
0
-15
200
150
This is the highest voltage that may be applied to a capacitor for
short periods of time in circuits with minimum series resistance of
33Ohms (CECC states 1kΩ). The surge voltage may be applied
up to 10 times in an hour for periods of up to 30 seconds at a
time. The surge voltage must not be used as a parameter in the
design of circuits in which, in the normal course of operation, the
capacitor is periodically charged and discharged.
85°C Tantalum
Rated Voltage
Surge Voltage
VR
VS
2
2.5
3
4
5
6.3
10
16
20
25
35
50
2.7
3.3
3.9
5.2
6.5
8
13
20
26
32
46
65
85°C OxiCap®
Rated Voltage
Surge Voltage
VR
VS
100
50
0
100
1000
10000
100000
1000000
Frequency (Hz)
For individual part number please refer to SpiTan Software for frequency
and temperature behavior found on AVX Corporation website.
206
1.2.2 Category voltage (VC).
Rated Voltage (%)
The capacitance of a tantalum capacitor varies with temperature. This variation itself is dependent to a small extent on
the rated voltage and capacitor size.
This is the rated d.c. voltage for continuous operation up to
85°C (up to 40°C for TLJ, TLN, NLJ series).
Operating voltage consists of the sum of DC bias voltage and
ripple peak voltage. The peak voltage should not exceed the
category voltage. For recommended voltage (application) derating refer to figure 2c of the SECTION 3.
1.8
2.5
4
6.3
10
2.3
3.3
5.2
8
13
125°C Tantalum*
Category Voltage Surge Voltage
VC
VS
1.3
1.7
2
2.7
3.3
4
7
10
13
17
23
33
1.7
2.2
2.6
3.4
4
5
8
13
16
20
28
40
105°C OxiCap®
Category Voltage Surge Voltage
VC
VS
1.2
1.7
2.7
4
7
1.6
2.2
3.4
5
8
*For THJ 175°C Category & Surge voltage see THJ section on pages 160-163.
061316
Technical Summary and
Application Guidelines
The solid Tantalum and OxiCap® capacitors have a limited
ability to withstand voltage and current surges. This is in
common with all other electrolytic capacitors and is due to
the fact that they operate under very high electrical stress
across the dielectric. For example a 6 volt tantalum capacitor
has an Electrical Field of 167 kV/mm when operated at rated
voltage. OxiCap® capacitors operate at electrical field significantly less than 167 kV/mm.
It is important to ensure that the voltage across the terminals
of the capacitor never exceeds the specified surge voltage
rating.
Solid tantalum capacitors and OxiCap® have a self healing
ability provided by the Manganese Dioxide semiconducting
layer used as the negative plate. However, this is limited in
low impedance applications. In the case of low impedance
circuits, the capacitor is likely to be stressed by current surges.
Derating the capacitor increases the reliability of the component. (See Figure 2b page 214). The “AVX Recommended
Derating Table” (page 216) summarizes voltage rating
for use on common voltage rails, in low impedance applications for both Tantalum and OxiCap® capacitors.
In circuits which undergo rapid charge or discharge a
protective resistor of 1Ω/V is recommended. If this is
impossible, a derating factor of up to 70% should be used
on tantalum capacitors. OxiCap® capacitors can be used
with derating of 20% minimum.
In such situations a higher voltage may be needed than is
available as a single capacitor. A series combination should
be used to increase the working voltage of the equivalent
capacitor: For example, two 22μF 25V parts in series is equivalent to one 11μF 50V part. For further details refer to J.A. Gill’s
paper “Investigation into the Effects of Connecting Tantalum
Capacitors in Series”, available from AVX offices worldwide.
NOTE:
While testing a circuit (e.g. at ICT or functional) it is likely that
the capacitors will be subjected to large voltage and current
transients, which will not be seen in normal use. These
conditions should be borne in mind when considering the
capacitor’s rated voltage for use. These can be controlled by
ensuring a correct test resistance is used.
1.2.5 Reverse voltage and Non-Polar operation.
The values quoted are the maximum levels of reverse voltage
which should appear on the capacitors at any time. These
limits are based on the assumption that the capacitors are
polarized in the correct direction for the majority of their
working life. They are intended to cover short term reversals
of polarity such as those occurring during switching transients of during a minor portion of an impressed waveform.
Continuous application of reverse voltage without normal
polarization will result in a degradation of leakage current. In
conditions under which continuous application of a reverse
061316
voltage could occur two similar capacitors should be used in
a back-to-back configuration with the negative terminations
connected together. Under most conditions this combination
will have a capacitance one half of the nominal capacitance
of either capacitor. Under conditions of isolated pulses or
during the first few cycles, the capacitance may approach
the full nominal value. The reverse voltage ratings are designed
to cover exceptional conditions of small level excursions into
incorrect polarity. The values quoted are not intended to
cover continuous reverse operation.
The peak reverse voltage applied to the capacitor must not
exceed:
10% of the rated d.c. working voltage to a maximum of
1.0v at 25°C
3% of the rated d.c. working voltage to a maximum of
0.5v at 85°C
1% of the rated d.c. working voltage to a maximum of
0.1v at 125°C (0.1v at 150°C THJ Series)
Note: Capacitance and DF values of OxiCap® may exceed
specification limits under these conditions.
LEAKAGE CURRENT vs. BIAS VOLTAGE
10
8
6
Leakage Current (A)
1.2.4 Effect of surges
4
2
0
-2
-4
-6
-8
-10
-20
0
20
40
60
80
100
Applied Voltage (Volts)
TAJD336M006
TAJD476M010
TAJD336M016
TAJC685M020
1.2.6 Superimposed A.C. Voltage (Vr.m.s.) Ripple Voltage.
This is the maximum r.m.s. alternating voltage; superimposed on a d.c. voltage, that may be applied to a capacitor.
The sum of the d.c. voltage and peak value of the
superimposed a.c. voltage must not exceed the category
voltage, v.c.
Full details are given in Section 2.
1.2.7 Forming voltage.
This is the voltage at which the anode oxide is formed. The
thickness of this oxide layer is proportional to the formation voltage for a capacitor and is a factor in setting the rated voltage.
207
Technical Summary and
Application Guidelines
1.3 DISSIPATION FACTOR AND
TANGENT OF LOSS ANGLE (TAN D)
1.4 IMPEDANCE, (Z) AND EQUIVALENT
SERIES RESISTANCE (ESR)
1.3.1 Dissipation factor (D.F.).
1.4.1 Impedance, Z.
This is the ratio of voltage to current at a specified frequency.
Dissipation factor is the measurement of the tangent of the
loss angle (tan ␦) expressed as a percentage. The measurement of DF is carried out using a measuring bridge that
supplies a 0.5V rms 120Hz sinusoidal signal, free of
harmonics with a bias of 2.2Vdc. The value of DF is temperature
and frequency dependent.
Note: For surface mounted products the maximum allowed
DF values are indicated in the ratings table and it is important
to note that these are the limits met by the component
AFTER soldering onto the substrate.
1.3.2 Tangent of Loss Angle (tan ␦).
This is a measurement of the energy loss in the capacitor. It
is expressed, as tan ␦ and is the power loss of the capacitor
divided by its reactive power at a sinusoidal voltage of specified frequency. Terms also used are power factor, loss factor
and dielectric loss. Cos (90 - ␦) is the true power factor. The
measurement of tan ␦ is carried out using a measuring
bridge that supplies a 0.5V rms 120Hz sinusoidal signal, free
of harmonics with a bias of 2.2Vdc.
1.3.3 Frequency dependence of Dissipation Factor.
Dissipation Factor increases with frequency as shown in the
typical curves that are for tantalum and OxiCap® capacitors
identical:
Typical DF vs Frequency
DF Multiplier
50
Three factors contribute to the impedance of a Tantalum capacitor; the resistance of the semiconductor layer; the capacitance
value and the inductance of the electrodes and leads.
At high frequencies the inductance of the leads becomes
a limiting factor. The temperature and frequency behavior
of these three factors of impedance determine the behavior
of the impedance Z. The impedance is measured at 25°C
and 100kHz.
1.4.2 Equivalent Series Resistance, ESR.
Resistance losses occur in all practical forms of capacitors.
These are made up from several different mechanisms,
including resistance in components and contacts, viscous
forces within the dielectric and defects producing bypass
current paths. To express the effect of these losses they are
considered as the ESR of the capacitor. The ESR is frequency
dependent and can be found by using the relationship;
tan δ
ESR =
2πfC
Where f is the frequency in Hz, and C is the capacitance in
farads.
The ESR is measured at 25°C and 100kHz.
ESR is one of the contributing factors to impedance, and
at high frequencies (100kHz and above) it becomes the
dominant factor. Thus ESR and impedance become almost
identical, impedance being only marginally higher.
5
Tantalum
1.4.3 Frequency dependence of Impedance and ESR.
OxiCap®
1
0.1
0.1
1
10
100
Frequency (kHz)
1.3.4 Temperature dependence of Dissipation
Factor.
ESR and Impedance both increase with decreasing frequency.
At lower frequencies the values diverge as the extra contributions to impedance (due to the reactance of the capacitor)
become more significant. Beyond 1MHz (and beyond the
resonant point of the capacitor) impedance again increases
due to the inductance of the capacitor. Typical ESR and
Impedance values are similar for both tantalum and niobium
oxide materials and thus the same charts are valid for both
for Tantalum and OxiCap® capacitors.
Dissipation factor varies with temperature as the typical curves
show. These plots are identical for both Tantalum and OxiCap®
capacitors. For maximum limits please refer to ratings tables.
Typical ESR vs Frequency
Typical DF vs Temperature
1.7
1.6
1.5
1.4
1.3
1.2
1.1
Tantalum
1
0.9
0.8
-55
-5
ESR Multiplier
DF Multiplier
1.8
OxiCap®
45
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0.1
OxiCap®
Tantalum
1
10
Frequency (kHz)
100
1000
95
Temperature (Celsius)
208
061316
Technical Summary and
Application Guidelines
Typical Impedance vs Frequency
1.5.2 Temperature dependence of the leakage
current.
Impedance Multiplier
100
The leakage current increases with higher temperatures;
typical values are shown in the graph. For operation between
85°C and 125°C, the maximum working voltage must be
derated and can be found from the following formula.
Vmax = 1- (T - 85) x VR
125
where T is the required operating temperature.
10
OxiCap®
Tantalum
1
0.1
0.1
1
10
100
1000
LEAKAGE CURRENT vs. TEMPERATURE
Frequency (kHz)
At 100kHz, impedance and ESR behave identically and
decrease with increasing temperature as the typical curves
show.
100
Leakage current
ratio I/IR20
1.4.4 Temperature dependence of the Impedance
and ESR.
10
1
Typical 100kHz ESR vs Temperature
0.1
Change in ESR
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
-40
-20
0
20
40
60
80
100
125
150 175
Temperature (°C)
1.5.3 Voltage dependence of the leakage current.
OxiCap®
The leakage current drops rapidly below the value corresponding to the rated voltage VR when reduced voltages are applied.
The effect of voltage derating on the leakage current is shown in
the graph. This will also give a significant increase in the reliability for any application. See Section 3.1 (page 214) for details.
Tantalum
1
0.9
0.8
-55 -40
-20
0
20
40
60
80
Temperature (Celsius)
100
125
150
LEAKAGE CURRENT vs. RATED VOLTAGE
1
1.5 D.C. LEAKAGE CURRENT
1.5.1 Leakage current.
The leakage current is dependent on the voltage applied,
the elapsed time since the voltage was applied and the
component temperature. It is measured at +20°C with the
rated voltage applied. A protective resistance of 1000Ω
is connected in series with the capacitor in the measuring
circuit. Three to five minutes after application of the rated
voltage the leakage current must not exceed the maximum
values indicated in the ratings table. Leakage current is
referenced as DCL (for Direct Current Leakage). The default
maximum limit for DCL Current is given by DCL = 0.01CV,
where DCL is in microamperes, and C is the capacitance
rating in microfarads, and V is the voltage rating in volts. DCL
of tantalum capacitors vary within arrange of 0.01 - 0.1CV or
0.5μA (whichever is the greater). And 0.02 - 0.1CV or 1.0μA
(whichever is the greater) for OxiCap® capacitors.
Reforming of Tantalum or OxiCap® capacitors is unnecessary
even after prolonged storage periods without the application
of voltage.
061316
Leakage Current
ratio I/IVR
Typical
Range
0.1
0.01
0
20
40
60
80
100
Rated Voltage (VR) %
For input condition of fixed application voltage and including
median curve of the Leakage current vs. Rated voltage graph
displayed above we can evaluate following curve.
209
Technical Summary and
Application Guidelines
Leakage current multiplier
LEAKAGE CURRENT MULTIPLIER vs. VOLTAGE DERATING
for FIXED APPLICATION VOLTAGE VA
1.4
1.5.4 Ripple current.
The maximum ripple current allowed is derived from the power
dissipation limits for a given temperature rise above ambient
temperature (please refer to Section 2, pages 211-212).
1.2
1.6 SELF INDUCTANCE (ESL)
1
0.8
The self-inductance value (ESL) can be important for
resonance frequency evaluation. See figure below typical ESL
values per case size.
0.6
Optimal
range
0.4
0.2
TAJ/TMJ/TPS/TRJ/THJ/TLJ/TCJ/TCQ/TCR/NLJ/NOJ/NOS
0
0
10
20
30
40
50
60
70
80
90
100
Application voltage VA to rated voltage VR ratio (%)
We can identify the range of VA/VR (derating) values with minimum actual DCL as the “optimal” range. Therefore the minimum DCL is obtained when capacitor is used at 25 to 40 %
of rated voltage - when the rated voltage of the capacitor is
2.5 to 4 times higher than actual application voltage.
For additional information on Leakage Current, please consult the AVX technical publication “Analysis of Solid Tantalum
Capacitor Leakage Current” by R. W. Franklin.
Case
Size
A
B
C
D
E
F
G
TAC/TLC/TPC
Case
Size
A
B
D
E
H
I
J
K
L
M
R
T
U
V
Z
210
Typical Self
Inductance
value (nH)
1.8
1.8
2.2
2.4
2.5
2.2
1.8
Typical SelfInductance
value (nH)
1.5
1.6
1.4
1.0
1.4
1.3
1.2
1.1
1.2
1.3
1.4
1.6
1.3
1.5
1.1
Case
Size
H
K
N
P
R
S
T
Typical Self
Inductance
value (nH)
1.8
1.8
1.4
1.4
1.4
1.8
1.8
TCM/TPM
TRM/NOM
Case
Size
D
E
V
Y
Typical SelfInductance
value (nH)
1.0
2.5
2.4
1.0
Case
Size
U
V
W
X
Y
5
Typical Self
Inductance
value (nH)
2.4
2.4
2.2
2.4
2.4
2.4
TLN/TCN/J-CAPTM
Case
Size
Typical SelfInductance
value (nH)
K
L
M
N
S
T
X
3
4
6
1.0
1.0
1.3
1.3
1.0
1.0
1.8
2.0
2.2
2.5
061316
Technical Summary and
Application Guidelines
SECTION 2
A.C. OPERATION, RIPPLE VOLTAGE AND RIPPLE CURRENT
2.1 RIPPLE RATINGS (A.C.)
In an a.c. application heat is generated within the capacitor
by both the a.c. component of the signal (which will depend
upon the signal form, amplitude and frequency), and by the
d.c. leakage. For practical purposes the second factor is
insignificant. The actual power dissipated in the capacitor is
calculated using the formula:
P = I2 R
and rearranged to I = SQRT (P⁄R) .....(Eq. 1)
where
I = rms ripple current, amperes
R = equivalent series resistance, ohms
U = rms ripple voltage, volts
P = power dissipated, watts
Z = impedance, ohms, at frequency under
consideration
Maximum a.c. ripple voltage (Umax).
From the Ohms’ law equation:
Umax = IR .....(Eq. 2)
Where P is the maximum permissible power dissipated as
listed for the product under consideration (see tables).
However care must be taken to ensure that:
1. The d.c. working voltage of the capacitor must not be
exceeded by the sum of the positive peak of the applied
a.c. voltage and the d.c. bias voltage.
2. The sum of the applied d.c. bias voltage and the negative
peak of the a.c. voltage must not allow a voltage reversal
in excess of the “Reverse Voltage”.
Historical ripple calculations.
Previous ripple current and voltage values were calculated
using an empirically derived power dissipation required to
give a 10°C (30°C for polymer) rise of the capacitors body
temperature from room temperature, usually in free air. These
values are shown in Table I. Equation 1 then allows the maximum ripple current to be established, and Equation 2, the
maximum ripple voltage. But as has been shown in the AVX
article on thermal management by I. Salisbury, the thermal
conductivity of a Tantalum chip capacitor varies considerably
depending upon how it is mounted.
Table I: Power Dissipation Ratings (In Free Air)
TAJ/TMJ/TPS/TPM/TRJ/TRM/THJ/TLJ/TLN/TCJ/TCM/TCN
J-CAPTM/TCQ/TCR/NLJ/NOJ/NOS/NOM Series Molded Chip
Max. power dissipation (W)
Tantalum
Polymer
TCJ
TAJ/TMJ/TPS
TCN
Case
TPM J-CAPTM TCM
TRJ/THJ
TLN
Size
TRM
TLJ
TCQ
TCR
A
0.075
—
—
0.100
—
B
0.085
—
—
0.125
—
C
0.110
—
—
0.175
—
D
0.150
—
0.255 0.225 0.355
E
0.165
—
0.270 0.250 0.410
F
0.100
—
—
0.150
—
G
0.070
0.060
—
0.100
—
H
0.080
0.070
—
0.100
—
K
0.065
0.055
—
0.090
—
L
0.070
0.060
—
0.095
—
M
—
0.040
—
0.080
—
N
0.050
0.040
—
0.080
—
P
0.060
—
—
0.090
—
R
0.055
—
—
0.085
—
S
0.065
0.055
—
0.095
—
T
0.080
0.070
—
0.100
—
U
0.165
—
—
0.380
—
V
0.250
—
0.285 0.360 0.420
W
0.090
—
—
0.130
—
X
0.100
—
—
0.175
—
Y
0.125
0.115 0.210 0.185 0.310
3
—
—
—
0.145
—
4
—
0.165
—
0.190
—
5
—
—
—
0.160
—
6
—
0.230
—
—
—
061316
OxiCap®
NLJ
NOJ
NOS
NOM
0.090
0.102
0.132
0.180
0.198
0.120
0.084
0.096
0.078
0.084
—
—
0.072
0.066
0.078
0.096
—
0.300
0.108
0.120
0.150
—
—
—
—
—
—
—
—
0.324
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
TACmicrochip® Series
Case
Size
A
B
D
E
H
I
J
K
L
M
Q
R
T
U
V
X
Z
Max. power
dissipation (W)
0.040
0.040
0.035
0.010
0.040
0.035
0.020
0.015
0.025
0.030
0.040
0.045
0.040
0.035
0.035
0.040
0.020
NLJ/NOJ/NOS/NOM
Temperature correction factor
for ripple current
Temp. °C
Factor
+25
1.00
+55
0.95
+85
0.90
+105
0.40
+125
0.40
(NOS,NOM)
TAJ/TPS/TPM/TRJ/TRM/THJ/TLJ/TLN
Temp ºC
up to 25°C
+55
+85
+105
+115
+125
+175 (THJ)
+200 (THJ)
Correction Factor
for ripple current
1.00
0.95
0.90
0.65
0.49
0.40
0.20
0.10
Correction Factor
for Power Dissipation
1.00
0.90
0.81
0.42
0.24
0.16
0.04
0.01
Max. Temperature
rise ºC
10
9
8.1
4.2
2.4
1.6
0.4
0.1
TCJ/TCM/TCN/J-CAPTM/TCQ/TCR
Temp ºC
up to 45°C
+85
+105
+125
Correction Factor
for ripple current
1.00
0.70
0.45
0.25
Correction Factor
for Power Dissipation
1.00
0.49
0.20
0.06
Max. Temperature
rise ºC
30
15
6
1.8
211
Technical Summary and
Application Guidelines
A piece of equipment was designed which would pass sine
and square wave currents of varying amplitudes through a
biased capacitor. The temperature rise seen on the body for
the capacitor was then measured using an infra-red probe.
This ensured that there was no heat loss through any thermocouple attached to the capacitor’s surface.
Results for the C, D and E case sizes
70
Temperature rise (C)
60
50
40
100KHz
1 MHz
30
20
0
0.00
C case
60
50
D case
40
30
20
10
0
0
0.20
E case
0.1
0.2
0.3
0.4
0.5
Several capacitors were tested and the combined results are
shown above. All these capacitors were measured on FR4
board, with no other heat sinking. The ripple was supplied at
various frequencies from 1kHz to 1MHz.
As can be seen in the figure above, the average Pmax value
for the C case capacitors was 0.11 Watts. This is the same
as that quoted in Table I.
The D case capacitors gave an average Pmax value 0.125
Watts. This is lower than the value quoted in the Table I by
0.025 Watts. The E case capacitors gave an average Pmax of
0.200 Watts that was much higher than the 0.165 Watts
from Table I.
If a typical capacitor’s ESR with frequency is considered, e.g.
figure below, it can be seen that there is variation. Thus for a
set ripple current, the amount of power to be dissipated by
the capacitor will vary with frequency. This is clearly shown in
figure in top of next column, which shows that the surface
temperature of the unit raises less for a given value of ripple
current at 1MHz than at 100kHz.
The graph below shows a typical ESR variation with frequency.
Typical ripple current versus temperature rise for 100kHz and
1MHz sine wave inputs.
50.00
40.00
100KHz
30.00
1 MHz
20.00
10.00
0.00
0.00
0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40
FR
A Tantalum capacitor is being used in a filtering application,
where it will be required to handle a 2 Amp peak-to-peak,
200kHz square wave current.
A square wave is the sum of an infinite series of sine waves
at all the odd harmonics of the square waves fundamental
frequency. The equation which relates is:
ISquare = Ipksin (2πƒ) + Ipksin (6πƒ) + Ipksin (10πƒ) + Ipksin (14πƒ) +...
Thus the special components are:
Frequency
200 KHz
600 KHz
1 MHz
1.4 MHz
1000
10000
Frequency (Hz)
100000
1000000
Peak-to-peak current
(Amps)
2.000
0.667
0.400
0.286
RMS current
(Amps)
0.707
0.236
0.141
0.101
Let us assume the capacitor is a TAJD686M006
Typical ESR measurements would yield.
200 KHz
600 KHz
1 MHz
1.4 MHz
0.1
0.45 0.50
Example
(TPSE107M016R0100)
ESR (Ohms)
1.20
70.00
Frequency
ESR vs. FREQUENCY
1
212
1.00
60.00
Power (Watts)
0.01
100
0.40
0.60
0.80
RMS current (Amps)
If I 2R is then plotted it can be seen that the two lines are in
fact coincident, as shown in figure below.
Temperature Rise (C)
Temperature rise ( o C)
10
100
90
80
70
Typical ESR
(Ohms)
0.120
0.115
0.090
0.100
Power (Watts)
Irms2 x ESR
0.060
0.006
0.002
0.001
Thus the total power dissipation would be 0.069 Watts.
From the D case results shown in figure top of previous
column, it can be seen that this power would cause the
capacitors surface temperature to rise by about 5°C.
For additional information, please refer to the AVX technical
publication “Ripple Rating of Tantalum Chip Capacitors” by
R.W. Franklin.
061316
Technical Summary and
Application Guidelines
2.2 OxiCap® RIPPLE RATING
OxiCap® capacitors showing 20% higher power dissipation
allowed compared to tantalum capacitors as a result of twice
higher specific heat of niobium oxide compared to Tantalum
powders. (Specific heat is related to energy necessary to
heat a defined volume of material to a specified temperature.)
2.3 THERMAL MANAGEMENT
The heat generated inside a tantalum capacitor in a.c.
operation comes from the power dissipation due to ripple
current. It is equal to I2R, where I is the rms value of the
current at a given frequency, and R is the ESR at the same
frequency with an additional contribution due to the leakage
current. The heat will be transferred from the outer surface by
conduction. How efficiently it is transferred from this point is
dependent on the thermal management of the board.
The power dissipation ratings given in Section 2.1 (page 211)
are based on free-air calculations. These ratings can be
approached if efficient heat sinking and/or forced cooling
is used.
In practice, in a high density assembly with no specific
thermal management, the power dissipation required to give
a 10°C (30°C for polymer) rise above ambient may be up to
a factor of 10 less. In these cases, the actual capacitor temperature should be established (either by thermocouple
probe or infra-red scanner) and if it is seen to be above this
limit it may be necessary to specify a lower ESR part or a
higher voltage rating.
Please contact application engineering for details or contact
the AVX technical publication entitled “Thermal Management
of Surface Mounted Tantalum Capacitors” by Ian Salisbury.
Thermal Dissipation from the Mounted Chip
ENCAPSULANT
LEAD FRAME
TANTALUM
ANODE
COPPER
SOLDER
PRINTED CIRCUIT BOARD
Thermal Impedance Graph with Ripple Current
THERMAL IMPEDANCE GRAPH
C CASE SIZE CAPACITOR BODY
TEMPERATURE DEG C
140
121 C\WATT
120
100
236 C\WATT
80
60
40
20
73 C\WATT
X
X
X
X - RESULTS OF RIPPLE CURRENT TEST - RESIN BODY
0
0
0.1 0.2 0.3
0.4
0.5 0.6
0.7 0.8 0.9
1.0
1.1 1.2 1.3
1.4
POWER IN UNIT CASE, DC WATTS
= PCB MAX Cu THERMAL
061316
= PCB MIN Cu AIR GAP
= CAP IN FREE AIR
213
Technical Summary and
Application Guidelines
SECTION 3
RELIABILITY AND CALCULATION OF FAILURE RATE
3.1 STEADY-STATE
Both Tantalum and Niobium Oxide dielectric have essentially
no wear out mechanism and in certain circumstances is
capable of limited self healing. However, random failures can
occur in operation. The failure rate of Tantalum capacitors will
decrease with time and not increase as with other electrolytic
capacitors and other electronic components.
Figure 1. Tantalum and OxiCap® Reliability Curve
The graph, Figure 2a, shows the relationship between
voltage derating (the ratio between applied and rated
voltage) and the failure rate. The graph gives the correction
factor FU for any operating voltage.
Figure 2a. Correction factor to failure rate FV for voltage
derating of a typical component (60% con. level).
10.0
FV Correction Factor
1.0
Infant
Mortalities
®
ap
0.1
iC
Ox
/
lum
nta
Ta
0.01
0.001
0.0001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Applied Voltage/Rated Voltage
Infinite Useful Life
214
Figure 2b. Gives our recommendation for voltage derating
for tantalum capacitors to be used in typical applications.
40
Operating Voltage (V)
The useful life reliability of the Tantalum and OxiCap® capacitors
in steady-state is affected by three factors. The equation from
which the failure rate can be calculated is:
F = FV x FT x FR x FB
where FV is a correction factor due to operating
voltage/voltage derating
FT is a correction factor due to operating
temperature
FR is a correction factor due to circuit series
resistance
FB is the basic failure rate level
Base failure rate.
Standard Tantalum conforms to Level M reliability (i.e.
1%/1000 hrs) or better at rated voltage, 85°C and 0.1Ω/volt
circuit impedance.
FB = 1.0% / 1000 hours for TAJ, TPS, TPM, TCJ, TCQ,
TCM, TCN, J-CAPTM, TAC
0.5% / 1000 hours for TCR, TMJ, TRJ, TRM, THJ and NOJ
0.2% / 1000 hours for NOS and NOM
TLJ, TLN, TLC and NLJ series of tantalum capacitors are defined
at 0.5 x rated voltage at 85°C due to the temperature derating.
FB = 0.2%/1000 hours at 85°C and 0.5xVR with 0.1Ω/V
series impedance with 60% confidence level.
Operating voltage/voltage derating.
If a capacitor with a higher voltage rating than the maximum
line voltage is used, then the operating reliability will be
improved. This is known as voltage derating.
30
Specified Range
in General Circuit
20
10
Specified Range in
Low Impedance Circuit
0
4 6.3
10
16 20
25
Rated Voltage (V)
35
50
Figure 2c. Gives voltage derating recommendations for
tantalum capacitors as a function of circuit impedance.
Working Voltage/Rated Voltage
Useful life reliability can be altered by voltage
derating, temperature or series resistance
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.01
OxiCap®, Tantalum Polymer TCJ, TCN, J-CAP TM
Recommended Range Tantalum
0.1
1.0
10
100
Circuit Resistance (Ohm/V)
1000
10000
041316
Technical Summary and
Application Guidelines
Operating Temperature.
If the operating temperature is below the rated temperature
for the capacitor then the operating reliability will be improved
as shown in Figure 3. This graph gives a correction factor FT
for any temperature of operation.
Figure 3: Correction factor to failure rate FR for ambient
temperature T for typical component
(60% con. level).
10000.0
FT Correction Factor
1000.0
NOS
100.0
Tantalum
NOJ
10.0
1.0
0.1
0.01
0
20
40
60
80
100
120
140
160
180
200
Temperature (ºC)
Circuit Impedance.
All solid Tantalum and/or niobium oxide capacitors require
current limiting resistance to protect the dielectric from surges.
A series resistor is recommended for this purpose. A lower
circuit impedance may cause an increase in failure rate,
especially at temperatures higher than 20°C. An inductive low
impedance circuit may apply voltage surges to the capacitor
and similarly a non-inductive circuit may apply current surges
to the capacitor, causing localized over-heating and failure.
The recommended impedance is 1 Ω per volt. Where this is
not feasible, equivalent voltage derating should be used
(See MIL HANDBOOK 217E). The graph, Figure 4, shows
the correction factor, FR, for increasing series resistance.
Figure 4. Correction factor to failure rate FR for series
resistance R on basic failure rate FB for a typical component
(60% con. level).
Circuit
resistance
ohms/volt
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0.1
FR
0.07
0.1
0.2
0.3
0.4
0.6
0.8
1.0
For circuit impedances below 0.1 ohms per volt, or for any
mission critical application, circuit protection should be
considered. An ideal solution would be to employ an AVX
SMT thin-film fuse in series.
041316
Example calculation.
Consider a 12 volt power line. The designer needs about
10μF of capacitance to act as a decoupling capacitor near a
video bandwidth amplifier. Thus the circuit impedance will be
limited only by the output impedance of the board’s power
unit and the track resistance. Let us assume it to be about
2 Ohms minimum, i.e. 0.167 Ohms/Volt. The operating
temperature range is -25°C to +85°C.
If a 10μF 16 Volt capacitor was designed in the operating
failure rate would be as follows.
a) FT = 1.0 @ 85°C
b) FR = 0.85 @ 0.167 Ohms/Volt
c) FV = 0.08 @ applied voltage/rated
voltage = 75%
d) FB = 1%/1000 hours, basic failure rate level
Thus
F = 1.0 x 0.85 x 0.08 x 1 = 0.068%/1000 Hours
If the capacitor was changed for a 20 volt capacitor, the
operating failure rate will change as shown.
FV = 0.018 @ applied voltage/rated voltage = 60%
F = 1.0 x 0.85 x 0.018 x 1 = 0.0153%/1000 Hours
3.2 Dynamic.
As stated in Section 1.2.4 (page 207), the solid capacitor has
a limited ability to withstand voltage and current surges.
Such current surges can cause a capacitor to fail. The
expected failure rate cannot be calculated by a simple
formula as in the case of steady-state reliability. The two
parameters under the control of the circuit design engineer
known to reduce the incidence of failures are derating and
series resistance.
The table below summarizes the results of trials carried out
at AVX with a piece of equipment, which has very low series
resistance with no voltage derating applied. That is if the
capacitor was tested at its rated voltage. It has been tested
on tantalum capacitors, however the conclusions are valid
for both tantalum and OxiCap® capacitors.
Results of production scale derating experiment
Capacitance
and Voltage
47μF 16V
100μF 10V
22μF 25V
Number of
units tested
1,547,587
632,876
2,256,258
50% derating
applied
0.03%
0.01%
0.05%
No derating
applied
1.1%
0.5%
0.3%
As can clearly be seen from the results of this experiment,
the more derating applied by the user, the less likely the
probability of a surge failure occurring.
It must be remembered that these results were derived from
a highly accelerated surge test machine, and failure rates in
the low ppm are more likely with the end customer.
A commonly held misconception is that the leakage current
of a Tantalum capacitor can predict the number of failures
which will be seen on a surge screen. This can be disproved
by the results of an experiment carried out at AVX on 47μF
215
Technical Summary and
Application Guidelines
10V surface mount capacitors with different leakage
currents. The results are summarized in the table below.
Leakage current vs number of surge failures.
Again, it must be remembered that these results were
derived from a highly accelerated surge test machine,
and failure rates in the low ppm are more likely with the end
customer.
Standard leakage range
0.1 μA to 1μA
Over Catalog limit
5μA to 50μA
Classified Short Circuit
50μA to 500μA
Number tested
10,000
Number failed surge
25
10,000
26
10,000
25
OxiCap® capacitor is less sensitive to an overloading stress
compared to Tantalum and so a 20% minimum derating is
recommended. It may be necessary in extreme low impedance
circuits of high transient or ‘switch-on’ currents to derate the
voltage further. Hence in general a lower voltage OxiCap® part
number can be placed on a higher rail voltage compared to the
tantalum capacitor – see table below.
AVX recommended derating table.
Voltage Rail
(V)
3.3
5
8
10
12
15
>24
216
Rated Voltage of Cap (V)
Tantalum
OxiCap®
6.3
4
10
6.3
16
10
20
–
25
–
35
–
Series Combination
–
For further details on surge in Tantalum capacitors refer
to J.A. Gill’s paper “Surge in Solid Tantalum Capacitors”,
available from AVX offices worldwide.
An added bonus of increasing the derating applied in a
circuit, to improve the ability of the capacitor to withstand
surge conditions, is that the steady-state reliability is
improved by up to an order. Consider the example of a
6.3 volt capacitor being used on a 5 volt rail.
The steady-state reliability of a Tantalum capacitor is affected by
three parameters; temperature, series resistance and voltage
derating. Assume 40°C operation and 0.1 Ohms/Volt series
resistance.
The capacitors reliability will therefore be:
Failure rate = FU x FT x FR x 1%/1000 hours
= 0.15 x 0.1 x 1 x 1%/1000 hours
= 0.015%/1000 hours
If a 10 volt capacitor was used instead, the new scaling factor
would be 0.006, thus the steady-state reliability would be:
Failure rate = FU x FT x FR x 1%/1000 hours
= 0.006 x 0.1 x 1 x 1%/1000 hours
= 6 x 10-4 %/1000 hours
So there is an order improvement in the capacitors steadystate reliability.
041316
Technical Summary and
Application Guidelines
SECTION 4
RECOMMENDED SOLDERING CONDITIONS
Both Tantalum and OxiCap® are lead-free system compatible
components, meeting requirements of J-STD-020 standard.
The maximum conditions with care: Max. Peak Temperature:
260ºC for maximum 10s, 3 reflow cycles. 2 cycles are
allowed for F-series capacitors.
Small parametric shifts may be noted immediately after
reflow, components should be allowed to stabilize at room
temperature prior to electrical testing.
SnPb soldering:
Pre-heating: 50-165ºC/90–120sec.
Max. Peak Temperature: 240-250ºC
Time of wave: 3-5sec.(max.10sec.)
The upper side temperature of the board should not
exceed +150ºC.
GENERAL LEAD-FREE NOTES
RECOMMENDED REFLOW PROFILE
The following should be noted by customers changing from
lead based systems to the new lead free pastes.
a) The visual standards used for evaluation of solder joints will
need to be modified as lead-free joints are not as bright as
with tin-lead pastes and the fillet may not be as large.
b) Resin color may darken slightly due to the increase in temperature required for the new pastes.
c) Lead-free solder pastes do not allow the same self alignment as lead containing systems. Standard mounting
pads are acceptable, but machine set up may need to be
modified.
Note: TCJ, TCM, TCN, J-CAPTM, TCQ, TCR, F38, TLN and
F98 series are not dedicated to wave soldering.
Lead-free soldering:
Pre-heating: 150±15ºC/60–120sec.
Max. Peak Temperature: 245±5ºC
Max. Peak Temperature Gradient: 2.5ºC/sec.
Max. Time above 230ºC: 40sec. max.
SnPb soldering:
Pre-heating: 150±15ºC/60–90sec.
Max. Peak Temperature: 220±5ºC
Max. Peak Temperature Gradient: 2ºC/sec.
Max. Time above solder melting point: 60sec.
RECOMMENDED HAND SOLDERING
Recommended hand soldering condition:
Tip Diameter
Selected to fit Application
Max. Tip Temperature
+370°C
Max. Exposure Time
3s
Anti-static Protection
Non required
Note: TCJ, TCM, TCN, J-CAPTM, TCQ, TCR, F38, TLN and
F98 series are not dedicated to hand soldering.
RECOMMENDED WAVE SOLDERING
Lead-free soldering:
Pre-heating: 50-165ºC/90-120sec.
Max. Peak Temperature: 250-260ºC
Time of wave: 3-5sec.(max. 10sec.)
041316
217
Technical Summary and
Application Guidelines
SECTION 5
TERMINATIONS
5.1 Basic Materials
Two basic materials are used for termination leads: Nilo
42 (Fe58Ni42) and copper. Copper lead frame is mainly
used for products requiring low ESR performance, while
Nilo 42 is used for other products. The actual status of
basic material per individual part type can be checked
with AVX.
5.2 Termination Finishes – Coatings
Three terminations plating are available. Standard plating
material is pure matte tin (Sn). Gold or tin-lead (SnPb) are
available upon request with different part number suffix
designations.*
5.2.1. Pure matte tin is used as the standard coating
material meeting lead-free and RoHS requirements. AVX carefully monitors the latest findings
on prevention of whisker formation. Currently
used techniques include use of matte tin electrodeposition, nickel barrier underplating and
recrystallization of surface by reflow. Terminations
are tested for whiskers according to NEMI recommendations and JEDEC standard requirements.
Data is available upon request.
5.2.2. Gold Plating is available as a special option* mainly for hybrid assembly using conductive glue.
5.2.3. Tin-lead (90%Sn 10%Pb) electroplated termination finish is available as a special option* upon
request.
* Some plating options can be limited to specific part types.
Please check availability of special options with AVX.
218
Technical Summary and
Application Guidelines
SECTION 6
MECHANICAL AND THERMAL PROPERTIES OF CAPACITORS
6.1 Acceleration
98.1m/s2 (10g)
6.2 Vibration Severity
10 to 2000Hz, 0.75mm of 98.1m/s2 (10g)
6.3 Shock
Trapezoidal Pulse, 98.1m/s2 for 6ms.
6.4 Adhesion to Substrate
IEC 384-3. minimum of 5N.
6.5 Resistance to Substrate Bending
The component has compliant leads which reduces the risk of
stress on the capacitor due to substrate bending.
PAD DIMENSIONS:
Case Size
A
Series
SMD ‘J’
Lead &
OxiCap®
(excluding
F-series)
6.6 Soldering Conditions
Dip soldering is permissible provided the solder bath temperature is ⱕ 270°C, the solder time ⬍ 3 seconds and the circuit
board thickness ⱖ 1.0mm.
6.7 Installation Instructions
The upper temperature limit (maximum capacitor surface temperature) must not be exceeded even under the most unfavorable conditions when the capacitor is installed. This must be considered particularly when it is positioned near components which
radiate heat strongly (e.g. valves and power transistors).
Furthermore, care must be taken, when bending the wires, that
the bending forces do not strain the capacitor housing.
6.8 Installation Position
No restriction.
6.9 Soldering Instructions
Fluxes containing acids must not be used.
6.9.1 Guidelines for Surface Mount Footprints
Component footprint and reflow pad design for
AVX capacitors.
The component footprint is defined as the maximum board area
taken up by the terminators. The footprint dimensions are given by
A, B, C and D in the diagram, which corresponds to W, max., A
max., S min. and L max. for the component. The footprint is symmetric about the center lines.
The dimensions x, y and z should be kept to a minimum to reduce
rotational tendencies while allowing for visual inspection of the component and its solder fillet.
Dimensions PS (c for F-series) (Pad Separation) and PW (a for
F-series) (Pad Width) are calculated using dimensions x and z.
Dimension y may vary, depending on whether reflow or wave
soldering is to be performed.
For reflow soldering, dimensions PL (b for positive terminal of
F-series; b' for negative terminal of F-series) (Pad Length), PW (a)
(Pad Width), and PSL (Pad Set Length) have been calculated. For
wave soldering the pad width (PWw) is reduced to less than the
termination width to minimize the amount of solder pick up while
ensuring that a good joint can be produced. In the case of mounting conformal coated capacitors, excentering (Δc) is needed to
except anode tab [ ].
D
C
z
B
Y
x
PW
A
PL
NOTE:
These recommendations (also in compliance
with EIA) are guidelines only. With care and
control, smaller footprints may be considered
for reflow soldering.
PS
PSL
Nominal footprint and pad dimensions for each case size are given
in the following tables:
061316
TACmicrochip®
Series
B
C
D
E
F
G
H
K
L
N
P
R
S
T
U
V
W
X
Y
Z
5
A
B
C
D
E
H
I
J
K
L
M
Q
R
S
T
U
V
Z
PSL
4.00
4.00
6.50
8.00
8.00
6.50
4.00
4.00
4.00
4.00
2.70
2.70
2.70
4.00
4.00
8.00
8.00
6.50
8.00
8.00
8.00
8.00
4.40
4.70
4.40
4.40
0.90
3.20
4.40
2.80
2.20
2.80
3.20
3.20
3.20
4.40
4.70
3.20
4.40
2.80
millimeters (inches)
PL
(0.157)
(0.157)
(0.256)
(0.315)
(0.315)
(0.256)
(0.157)
(0.157)
(0.157)
(0.157)
(0.106)
(0.106)
(0.106)
(0.157)
(0.157)
(0.315)
(0.315)
(0.256)
(0.315)
(0.315)
(0.315)
(0.315)
(0.173)
(0.185)
(0.173)
(0.173)
(0.035)
(0.126)
(0.173)
(0.110)
(0.087)
(0.110)
(0.126)
(0.126)
(0.126)
(0.173)
(0.185)
(0.126)
(0.173)
(0.110)
1.40
1.40
2.00
2.00
2.00
2.00
1.40
1.40
1.40
1.40
0.95
0.95
0.95
1.40
1.40
2.00
2.00
2.00
2.00
2.00
2.00
2.00
1.60
1.70
1.60
1.60
0.30
1.30
1.60
1.10
0.90
1.10
1.30
1.30
1.30
1.60
1.70
1.30
1.60
1.10
PS
(0.055)
(0.055)
(0.079)
(0.079)
(0.079)
(0.079)
(0.055)
(0.055)
(0.055)
(0.055)
(0.037)
(0.037)
(0.037)
(0.055)
(0.055)
(0.079)
(0.079)
(0.079)
(0.079)
(0.079)
(0.079)
(0.079)
(0.063)
(0.067)
(0.063)
(0.063)
(0.012)
(0.051)
(0.063)
(0.043)
(0.035)
(0.043)
(0.051)
(0.051)
(0.051)
(0.063)
(0.067)
(0.051)
(0.063)
(0.043)
1.20
1.20
2.50
4.00
4.00
2.50
1.20
1.20
1.20
1.20
0.80
0.80
0.80
1.20
1.20
4.00
4.00
2.50
4.00
4.00
4.00
4.00
1.20
1.30
1.20
1.20
0.30
0.60
1.20
0.60
0.40
0.60
0.60
0.60
0.60
1.20
1.30
0.60
1.20
0.60
PW
(0.047)
(0.047)
(0.098)
(0.157)
(0.157)
(0.098)
(0.047)
(0.047)
(0.047)
(0.047)
(0.031)
(0.031)
(0.031)
(0.047)
(0.047)
(0.157)
(0.157)
(0.098)
(0.157)
(0.157)
(0.157)
(0.157)
(0.047)
(0.051)
(0.047)
(0.047)
(0.012)
(0.024)
(0.047)
(0.024)
(0.016)
(0.024)
(0.024)
(0.024)
(0.024)
(0.047)
(0.051)
(0.024)
(0.047)
(0.024)
1.80
2.80
2.80
3.00
3.00
2.80
1.80
2.80
1.80
2.80
1.60
1.60
1.60
1.80
2.80
3.70
3.70
2.80
3.00
3.00
3.70
3.00
1.80
3.00
1.80
1.80
0.30
1.50
1.80
1.00
0.70
1.00
1.00
1.50
1.50
1.80
3.00
1.50
1.80
0.70
(0.071)
(0.110)
(0.110)
(0.118)
(0.118)
(0.110)
(0.071)
(0.110)
(0.071)
(0.110)
(0.063)
(0.063)
(0.063)
(0.071)
(0.110)
(0.145)
(0.145)
(0.110)
(0.118)
(0.118)
(0.145)
(0.118)
(0.071)
(0.118)
(0.071)
(0.071)
(0.012)
(0.059)
(0.071)
(0.039)
(0.028)
(0.039)
(0.039)
(0.059)
(0.059)
(0.071)
(0.118)
(0.059)
(0.071)
(0.028)
PWw
0.90 (0.035)
1.60 (0.063)
1.60 (0.063)
1.70 (0.067)
1.70 (0.067)
1.60 (0.063)
0.90 (0.035)
1.60 (0.063)
0.90 (0.035)
1.60 (0.063)
0.80 (0.031)
0.80 (0.031)
0.80 (0.031)
0.90 (0.035)
1.60 (0.063)
1.80 (0.071)
1.80 (0.071)
1.60 (0.063)
1.70 (0.067)
1.70 (0.067)
1.80 (0.071)
1.70 (0.067)
0.90 (0.035)
1.50 (0.059)
0.90 (0.035)
0.90 (0.035)
N/A
0.075 (0.003)
0.90 (0.035)
0.50 (0.019)
0.35 (0.014)
0.50 (0.019)
0.50 (0.019)
0.075 (0.003)
0.075 (0.003)
0.90 (0.035)
1.50 (0.059)
0.075 (0.003)
0.90 (0.035)
0.35 (0.014)
Note: SMD ‘J’ Lead = TAJ, TMJ, TPS, TPM, TRJ, TRM, THJ, TLJ, TCJ, TCM, TCQ, TCR
PW
PLP
PAD DIMENSIONS:
Case Size
Series M
TLN, TCN
& J-CAPTM
Undertab
N
K
S
L
T
X
3
4
6
PS
PSL
PLN
millimeters (inches)
PSL
PLP
PS
PLN
PW+
PW
2.50 (0.098)
2.50 (0.098)
3.60 (0.142)
3.60 (0.142)
3.90 (0.154)
3.90 (0.154)
7.70 (0.303)
7.70 (0.303)
7.70 (0.303)
15.20 (0.598)
1.05 (0.041)
1.05 (0.041)
1.35 (0.053)
1.35 (0.053)
1.35 (0.053)
1.35 (0.053)
2.20 (0.087)
2.20 (0.087)
2.20 (0.087)
2.65 (0.104)
0.40 (0.016)
0.40 (0.016)
0.90 (0.035)
0.90 (0.035)
1.00 (0.039)
1.00 (0.039)
2.10 (0.083)
2.10 (0.083)
2.10 (0.083)
9.90 (0.390)
1.05 (0.041)
1.05 (0.041)
1.35 (0.053)
1.35 (0.053)
1.55 (0.061)
1.55 (0.061)
3.40 (0.134)
3.40 (0.134)
3.40 (0.134)
2.65 (0.104)
1.00 (0.039)
1.00 (0.039)
1.30 (0.051)
1.30 (0.051)
2.50 (0.098)
2.50 (0.098)
3.25 (0.128)
4.75 (0.187)
4.75 (0.187)
5.50 (0.217)
1.00 (0.039)
1.00 (0.039)
1.30 (0.051)
1.30 (0.051)
2.10 (0.083)
2.10 (0.083)
3.25 (0.128)
4.75 (0.187)
4.75 (0.187)
5.50 (0.217)
PAD DIMENSIONS F-SERIES:
millimeters (inches)
Center of nozzle
c
-
+
b´
Case Size
U
Series
a
(0.014)
(0.026)
(0.035)
(0.039)
(0.051)
(0.091)
(0.091)
(0.098)
(0.055)
(0.067)
(0.071)
(0.102)
(0.102)
c
a
b
b
M
S
F38, F91,
P
F92, F93,
A
F97, F98
B
C
N
R·P
Q·S
F95,
AUDIO F95
A
Conformal
T
B
0.35
0.65
0.90
1.00
1.30
2.30
2.30
2.50
1.40
1.70
1.80
2.60
2.60
0.40
0.70
0.70
1.10
1.40
1.40
2.00
2.00
0.60
0.70
0.70
0.70
0.80
(0.016)
(0.028)
(0.028)
(0.043)
(0.055)
(0.055)
(0.079)
(0.079)
(0.024)
(0.028)
(0.028)
(0.028)
(0.032)
F72
Conformal
R·M
5.80 (0.228)
1.20 (0.047)
F75
Conformal
U·C
D
R
3.00 (0.118)
4.10 (0.161)
5.80 (0.228)
1.20 (0.047)
1.20 (0.047)
1.20 (0.047)
b'
0.40
0.70
0.70
1.10
1.40
1.40
2.00
2.00
0.50
0.60
0.60
0.60
0.70
(0.016)
(0.028)
(0.028)
(0.043)
(0.055)
(0.055)
(0.079)
(0.079)
(0.020)
(0.024)
(0.024)
(0.024)
(0.028)
Δc*
c
0.40
0.60
0.80
0.40
1.00
1.30
2.70
4.00
0.70
1.10
1.10
1.20
1.10
(0.016)
(0.024)
(0.032)
(0.016)
(0.039)
(0.051)
(0.106)
(0.157)
(0.028)
(0.043)
(0.043)
(0.047)
(0.043)
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.20 (0.008)
0.20 (0.008)
0.20 (0.008)
0.20 (0.008)
0.20 (0.008)
1.20 (0.047)
3.90 (0.154)
0.50 (0.020)
1.20 (0.047)
1.20 (0.047)
1.20 (0.047)
3.30 (0.130)
3.90 (0.154)
3.90 (0.154)
0.50 (0.020)
0.50 (0.020)
0.50 (0.020)
*In the case of mounting conformal coated capacitors, excentering (Δc)
is needed to except anode tab [ ].
219
Technical Summary and
Application Guidelines
6.10 PCB Cleaning
PAD DIMENSIONS SMD HERMETIC:
Ta chip capacitors are compatible with most PCB
board cleaning systems.
If aqueous cleaning is performed, parts must be allowed
to dry prior to test. In the event ultrasonics are used power
levels should be less than 10 watts per/litre, and care must
be taken to avoid vibrational nodes in the cleaning bath.
millimeters (inches)
PW
PLP
Case Size
PS
PSL
PSL
PL
PS
PW
PWW
9
13.20 (0.520)
2.40 (0.094)
8.40 (0.331)
11.80 (0.465)
N/A
THH
J-lead only
I
13.00 (0.512)
3.80 (0.150)
5.40 (0.213)
5.30 (0.210)
N/A
THH
Undertab only
I
10.60 (0.417)
3.00 (0.118)
4.60 (0.181)
4.00 (0.157)
N/A
SERIES
TCH & THH
J-lead only
PW
PKW
+
-
+
-
PL
PS
EPOXY
TAJ/TMJ/TPS/TPM/TRJ/TRM/THJ
TLJ/TLN/TCJ/TCM/TCN/J-CAPTM
TCQ/TCR/NLJ/NOJ/NOS/NOM
UL RATING
OXYGEN INDEX
UL94 V-0
35%
SECTION 8: QUALIFICATION
APPROVAL STATUS
PK
PW
SECTION 7: EPOXY FLAMMABILITY
DESCRIPTION
STYLE
Surface mount
capacitors
TAJ
SPECIFICATION
CECC 30801 - 005 Issue 2
CECC 30801 - 011 Issue 1
PL
PSL
Case Size
PSL
PL
PS
PKW
PW
PK
11.00(0.433)
1.70(0.067)
7.60(0.300)
10.60(0.417)
3.00(0.118)
4.60(0.181)
SERIES
TCH & THH
Undertab only
220
9
061316