AOS Semiconductor Product Reliability Report AOZ8808DI-05, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOZ8808DI-05. Review of the electrical test results confirm that AOZ8808DI-05 pass AOS quality and reliability requirements for product release. The continuous qualification testing and reliability monitoring program ensure that all outgoing products will continue to meet AOS quality and reliability standards. Table of Contents: I. II. III. IV. Product Description Package and Die information Qualification Tests Result Reliability Evaluation I. Product Description: The AOZ8808DI-05 is a transient voltage suppressor array designed to protect high speed data lines such as HDMI, USB 3.0, MDDI, SATA, and Gigabit Ethernet from damaging ESD events. -ROHS compliant -Halogen free . Details please refer to the datasheet. II. Package and Die Information: Product ID Process Package Type Lead Frame Die attach material Die bond wire MSL level AOZ8808DI-05 HV047A1 DFN2.5x1.0 Cu, NiPbAu 8290 Au, 1 mil Up to Level 1 2 III. Qualification Tests Result Test Item Test Condition Test Duration Sample Size Standard Pre-Conditioning 168hrs @85 °C /85%RH+3 cyc reflow@260°C - 3 lots (Sum of TC,PCT and HAST) JESD22-A113 Vdd= 80%Vbr max. Temp = 150°C HTRB JESD22-A108 168hrs 500hrs 4 lots 77pcs /lot '-65 °C to +150 °C, air to air (2cyc/hr) Temperature Cycle 500cycles 3 lots JESD22-A110 77pcs /lot 96hrs 121°C, 29.7psi, RH= 100% Pressure Pot 3 lots JESD22-A102 77pcs /lot '130 +/- 2°C, 85%RH, 33.3 psi, at VCC min power dissipation. HAST 100hrs 3 lot JESD22-A104 55pcs /lot IV. Reliability Evaluation FIT rate (per billion): 23 MTTF = 4957 years The presentation of FIT rate for the individual product reliability is restricted by the actual HTRB sample size of the selected product. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion device hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 7 MTTF = 10 / FIT = 4.34 x10 hrs= 4957 years 9 / [2x4x77x500x258] = 23 Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB tests H = Duration of HTRB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 258 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 3 130 deg C 150 deg C 2.59 1