AOS Semiconductor Product Reliability Report AOZ8809DI-05, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOZ8809DI-05. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOZ8809DI-05 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monitored for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Reliability Stress Test Summary and Results Reliability Evaluation I. Product Description: The AOZ8809 is a transient voltage suppressor array designed to protect high speed data lines such as HDMI, USB 3.0, MDDI, SATA, and Gigabit Ethernet from damaging ESD events. This device incorporates eight surge rated, low capacitance steering diodes and a TVS in a single package. During transient conditions, the steering diodes direct the transient to either the positive side of the power supply line or to ground. The AOZ8809 provides a typical line-to-line capacitance of 0.25 pF and low insertion loss up to 6 GHz providing greater signal integrity making it ideally suited for HDMI 1.3 or USB 3.0 applications , such as Digital TVs, DVD players, computing, set-top boxes and MDDI applications in mobile computing devices. The AOZ8809 comes in a RoHS compliant and Halogen Free 2.5 mm x 1.0 mm x 0.55 mm DFN10 package Details refer to the datasheet. II. Die / Package Information: Process Package Type Lead Frame Die Attach Bonding Mold Material Moisture Level AOZ8809DI-05 Standard sub-micron Ultra-Low Capacitance TVS Diode DFN2.5x1.0 10 Leads Bare Cu Ag Epoxy Cu wire Epoxy resin with silica filler Up to Level 1 2 III. Reliability Stress Test Summary and Results Test Item Test Condition Time Point Total Sample size Number of Failures Reference Standard HTRB Temp = 150°C , Vdd=80% of Vbrmax 168 / 500 / 1000 hours 924 pcs 0 JESD22-A108 MSL Precondition 168hr 85°C/85%RH + 3 cycle reflow@260°C (MSL 1) - 2772 pcs 0 JESD22-A113 HAST 130°C , 85%RH, 33.3 psi, Vdd = 80% of Vbrmax 96 hours 924 pcs 0 JESD22-A110 Autoclave 121°C , 29.7psia, RH=100% 96 hours 924 pcs 0 JESD22-A102 Temperature Cycle -65°C to 150°C , air to air, 250 / 500 cycles 924 pcs 0 JESD22-A104 Note: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 6.10 MTTF = 18700 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 6.10 9 MTTF = 10 / FIT = 18700 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 259 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 3