Data Sheet Super Fast Recovery Diode RF505TF6S Dimensions (Unit : mm) Series Standard Fast Recovery Structure Applications General rectification RF505 TF6S Features 1)Low switching loss 2)High current overload capacity ① ② Construction Silicon epitaxial planer ROHM : TO220NFM Absolute maximum ratings (Tc=25C) Parameter Symbol VRM Repetitive peak reverse voltage VR Reverse voltage Average rectified forward current Io Forward current surge peak IFSM Junction temperature Storage temperature Tj Tstg Electrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage ① Manufacture Year ② Manufacture Week Conditions Duty≤0.5 Direct voltage 60Hz half sin wave, Resistance load, Tc=125°C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Conditions Min. IF=5A Limits 600 600 5 Unit V V A 80 A 150 55 to 150 C C Typ. Max. Unit － 1.3 1.7 V Reverse current IR VR=600V － 0.03 10 μA Reverse recovery time trr IF=0.5A,IR=1A,Irr=0.25×I R － 22 30 ns Rth(j-c) junction to case － － 3 °C/W Thermal resistance www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A Data Sheet RF505TF6S 1000000 100 Tj=125°C 100000 Tj=150°C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 10 1 Tj=25°C 0.1 0.01 Tj=150°C Tj=125°C 10000 1000 100 Tj=25°C 10 1 0.001 0 500 1000 1500 2000 0 2500 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 100 200 300 400 600 1500 1000 IF=5A Tj=25°C FORWARD VOLTAGE:VF(mV) f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 500 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 100 10 1400 1300 1200 AVE:1247mV 1100 1 1000 0 5 10 15 20 25 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1000 180 100 AVE:22.4nA 10 f=1MHz VR=0V Tj=25°C CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT : IR(nA) VR=600V Tj=25°C 1 160 140 AVE:150.2pF 120 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A 200 30 IF=0.5A IR=1A Irr=0.25*IR Tj=25°C REVERSE RECOVERY TIME:trr(ns) 1cyc IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet RF505TF6S 8.3ms 150 AVE:136.5A 25 20 AVE:22.0ns 15 10 5 0 100 trr DISPERSION MAP IFSM DISPERSION MAP 1000 1000 IFSM 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 8.3ms 1cyc 100 10 t 100 10 1 10 100 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 100 30 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 AVE：19.9kV 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ Rth(j-a) Rth(j-c) 1 0.1 0.001 ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 3/4 2011.10 - Rev.A Data Sheet RF505TF6S Io 0A VR 0V 8 D.C. D=0.2 4 7 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) FORWARD POWER DISSIPATION:Pf(W) D=0.5 half sin wave 5 D=t/T VR=480V Tj=150°C D=0.8 D=0.8 6 T D.C. 8 7 D=0.1 D=0.05 3 2 6 D=0.5 5 half sin wave 4 1 3 D=0.2 2 D=0.1 D=0.05 1 0 0 0 2 4 6 8 0 10 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 8 30 60 90 120 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) 9 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t 9 D.C. 0A D=0.8 0V Io VR t 7 T D=0.5 6 D=t/T VR=480V Tj=150°C 5 half sin wave 4 D=0.2 3 D=0.1 2 D=0.05 1 0 0 30 60 90 120 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A