Datasheet T6 Deep Red-B

STDRG16A-T6 Deep Red-B
Applicable for automotive exterior light
T6 Deep Red-B
STDRG16AB
RoHS
AEC-Q101
Product Brief
Description
Features and Benefits
•
This White Colored surface-mount LED
comes in standard package dimension.
Package Size: 3.3x4.0x1.9mm
•
It has a substrate made up of a molded
plastic reflector sitting on top of a lead
frame.
•
•
•
•
•
•
•
The die is attached within the reflector
cavity and the cavity is encapsulated by
silicone.
•
Key Applications
•
•
The package design coupled with
careful selection of component
materials allow these products to
perform with high reliability.
Rev3.1, Feb 16, 2016
Deep Red Color PLCC6 (630nm)
ESD min 2kV
MSL 2 Level
Viewing angle 120℃
AEC-Q101 Qualified
RoHS compliant
1
Automotive Exterior Lighting
Stop tail Lamp, CHMSL
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STDRG16A-T6 Deep Red-B
Table of Contents
Index
•
Product Brief
1
•
Table of Contents
2
•
Performance Characteristics
3
•
Characteristics Graph
5
•
Color Bin Structure
11
•
Reliability Test
12
•
Mechanical Dimensions
13
•
Material Structure
14
•
Emitter Tape & Reel Packaging
15
•
Product Nomenclature (Labeling Information)
17
•
Recommended Solder Pad
18
•
Reflow Soldering Characteristics
19
•
Handling of Silicone Resin for LEDs
20
•
Precaution For Use
21
•
Company Information
24
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STDRG16A-T6 Deep Red-B
Performance Characteristics
Table 1. Electro Optical Characteristics, IF =140mA , Ta = 25ºC, RH30%
Value
Parameter1
Symbol
Unit
Min
Typ
Max
1.90
2.28
2.65
V
10
uA
7,100
mcd
Forward Voltage [1]
VF
Reverse Current [5]
IR
(VR=5V)
Luminous Intensity [2] [1]
IV
Luminous Flux
ΦV
15,400
mlm
Peak Wavelength
Wp
640
nm
Dominant Wavelength [1]
Wd
2,800
627
5,000
630
639
nm
2θ1/2
120
deg.
Optical Efficiency
ηop
49.2
lm/W
Spectral Bandwidth 50%

16
nm
Rth JA
110
℃/W
Rth JS
60
℃/W
Temperature coefficient of VF
-10℃ ≤ T ≤ 100 ℃
TCv
-2.17
mV/℃
Temperature coefficient of W d
-10℃ ≤ T ≤ 100 ℃
TCx
0.08
nm/℃
Luminous Intensity Phi V / IV
∂Ω
Viewing Angle
[3]
Thermal resistance [4]
3.0
3.1
lm/cd
Notes :
(1) Tolerance : VF :±0.1V, IV :±7%, W d :±0.5nm
(2) The luminous intensity IV was measured at the peak of the spatial pattern which may not be
aligned with the mechanical axis of the LED package.
(3) Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity
(4) Thermal resistance = Rth JA : Junction/ambient , Rth JS : Junction/solder point
(5) Not designed for reverse operation
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STDRG16A-T6 Deep Red-B
Performance Characteristics
Table 2. Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power Dissipation (Ta=25℃)
Pd
550
mW
Forward Current (Ta=25℃)
IF
200
mA
Peak Forward Current
(t≤ 1 μsec,D≤1/10,Ta=25℃)
IFM
1000
mA
Operating Temperature
Topr
-40 ~ +110
℃
Storage Temperature
Tstg
-40 ~ +110
℃
Junction Temperature
Tj
125
℃
Soldering Temperature
Tsld
Reflow Soldering : 260 ℃ for 10sec.
Hand Soldering : 315 ℃ for 4sec.
ESD (HBM)
(R=1.5kΩ, C= 100pF)
Min 2
kV
Notes :
•
•
LED’s properties might be different from suggested values like above and below tables if
operation condition will be exceeded our parameter range. Care is to be taken that power
dissipation does not exceed the absolute maximum rating of the product.
All measurements were made under the standardized environment of Seoul Semiconductor.
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Product Data Sheet
STDRG16A-T6 Deep Red-B
Characteristics Graph
Fig 1. Color Spectrum, IF = 140mA, Ta = 25ºC, RH30%
Relative Emission Intensity
1.0
0.8
0.6
0.4
0.2
0.0
400
450
500
550
600
650
700
750
Wavelength [nm]
Fig 2. Viewing Angle Distribution, IF = 140mA
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Product Data Sheet
STDRG16A-T6 Deep Red-B
Characteristics Graph
Fig 3. Forward Voltage vs. Forward Current , Ta = 25ºC
220
200
Forward Current [mA]
180
160
140
120
100
80
60
40
20
0
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
Forward Voltage [V]
Fig 4. Forward Current vs. Relative Luminous Intensity, Ta = 25ºC
△IV = IV / IV(140mA)
1.6
1.4
1.2
IV
1.0
0.8
▷
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160 180 200 220
Forward Current [mA]
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Product Data Sheet
STDRG16A-T6 Deep Red-B
Characteristics Graph
Fig 5. Forward Current vs. Wd Shift , Ta = 25ºC
0.6
△Wd = Wd - Wd(140mA)
0.4
0.2
Wd
0.0
-0.2
▷
-0.4
-0.6
-0.8
-1.0
0
20
40
60
80 100 120 140 160 180 200 220
Forward Current [mA]
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Product Data Sheet
STDRG16A-T6 Deep Red-B
Characteristics Graph
Fig 6. Relative Light Output vs. Junction Temperature, IF = 140mA
△IV = IV / IV(25℃)
1.6
1.4
1.2
IV
1.0
▷
0.8
0.6
0.4
0.2
0.0
-60 -40 -20
0
20
40
60
80
100 120 140
Junction Temperature [℃]
Fig 7. Junction Temperature vs. Forward Voltage shift, IF = 140mA
△VF = VF - VF(25℃)
0.25
0.20
0.15
VF
0.10
0.05
▷
0.00
-0.05
-0.10
-0.15
-0.20
-60 -40 -20
0
20
40
60
80
100 120 140
Junction Temperature [℃]
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Product Data Sheet
STDRG16A-T6 Deep Red-B
Characteristics Graph
Fig 8. Dominant wavelength shift vs. Junction Temperature, IF = 140mA
△Wd = Wd - Wd(25℃)
10
8
6
Wd
4
2
0
▷
-2
-4
-6
-60 -40 -20
0
20
40
60
80
100 120 140
Junction Temperature [℃]
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Product Data Sheet
STDRG16A-T6 Deep Red-B
Characteristics Graph
Fig 9. Maximum Forward Current vs. Temperature
Ta
Maximum Forward Current IF [mA]
200
TA
150
TS
100
TA temp : Ambient
TS temp : Solder point
50
0
-40
-20
0
20
40
60
80
100
120
A [℃]
Temperature
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STDRG16A-T6 Deep Red-B
Color Bin Structure
Table 3. Bin Code description Ta = 25ºC, IF=140mA
Luminous Intensity ( mcd)
Part Number
Forward Voltage (VF)
Dominant Wavelength (nm)
Bin
Code
Min.
Max.
Bin
Code
Min.
Max.
Bin
Code
Min.
Max.
a
2800
3550
P
627
639
z
1.90
2.05
0
3550
4500
a
2.05
2.20
1
4500
5600
b
2.20
2.35
2
5600
7100
c
2.35
2.50
d
2.50
2.65
STDRG16AB
Available ranks
Not yet available ranks
*Notes :
(1) All measurements were made under the standardized environment of Seoul Semiconductor
In order to ensure availability, single color rank will not be orderable.
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STDRG16A-T6 Deep Red-B
Reliability Test
Test Item
Standard
Test Method
Test Condition
Duration
/ Cycle
Number
Of Test
External Visual
JESD22 B-101
Visual inspection
-
77
D.P.A
AEC-Q101-004
Random Sample H3TRB,HAST,TC
-
5
Vibration
JESD22 B-103
0.06 inch displacement,
20 to 100 Hz,
50 g 100 Hz to 2kHz,
4 times
30
ESD
JESD22 A-114
Human-body mode,
R=1.5㏀, C = 100pF
3 times
Negative/
Positive
30
Physical Dimension
JESD22 B-100
Verify physical dimensions against
device mechanical drawing
3 times
30
Mechanical Shock
JESD22 B-104
1500 g's for 0.5 ms,
5 blows, 3 orientations
3 times
30
Parametric Verification
JESD22 A-108
25℃, 1000 hours @200mA
1000hrs
77
Temperature cycling
JESD22 A-104
Tc= -40°∼100°C, 30 min. dwell,
5 min transfer, 1000 cycles
1000hrs
77
Power Temperature Cycle
JESD22 A-105
Ta=-40℃~85℃, If =125mA,
20 min dwell / 20 min transition
(1 hour cycle), 2 min ON / 2 min OFF
1000hrs
77
High Humidity High Temp.
Operating Life
JESD22 A-101
85℃/85% RH, @ 125mA
1000hrs
77
High Temperature
Operating Life
JESD22 A-108C
Ta= 100°C, If =75mA
1000hrs
77
Low Temperature
Operating Life
JESD22 A-108C
Ta= -40°C, If = 200mA
1000hrs
77
Low Temperature
Storage Life
JESD22 A-119
Ta=-40°C, non-operating
1000hrs
77
High Temperature
Storage Life
JESD22 A-103B
Ta=100°C, non-operating
1000hrs
77
Thermal Shock
JESD22 A-104
-40°C ~ 100°C,
20 min. dwell, <10 second transfer,
1000 cycles
1000hrs
77
Criteria for Judging the Damage
Criteria for Judgment
Item
Symbol
Condition
MIN
MAX
Forward Voltage
VF
IF =140mA
-
Initial × 1.2
Luminous Intensity
IV
IF =140mA
Initial × 0.8
-
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STDRG16A-T6 Deep Red-B
Mechanical Dimensions / Material Structure
Top View
Bottom View
A
NC
A
A
C
A
Package Mark
Side View
Circuit
ESD Protection Device
Package
Mark
(1) All dimensions are in millimeters.
(2) Scale : none
(3) Undefined tolerance is ±0.05mm
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STDRG16A-T6 Deep Red-B
Mechanical Dimensions / Material Structure
②
④
③
⑥
⑤
①
Parts No.
Name
Description
Materials
①
LEAD FRAME
Metal
Copper Alloy
(Gold Plated)
②
Chip Source
Blue LED
GaN on Sapphire
③
Wire
Metal
Gold Wire
④
Encapsulation
Silicone
+Phosphor
⑤
Body
PPA
Heat-resistant Polymer
⑥
ESD Protection Device
Si
-
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STDRG16A-T6 Deep Red-B
Emitter Tape & Reel Packaging
Packag
e Mark
15.4±1.0
180
13±0.3
60
2
22
13
( Tolerance: ±0.2, Unit: mm )
(1) Quantity : Max 900pcs/Reel
(2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm
(3) Adhesion Strength of Cover Tape
Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape
at the angle of 10˚ to the carrier tape.
(4) Package : P/N, Manufacturing data Code No. and Quantity to be indicated on a damp proof Package.
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STDRG16A-T6 Deep Red-B
Emitter Tape & Reel Packaging
Reel
Aluminum Bag
Outer Box
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STDRG16A-T6 Deep Red-B
Product Nomenclature
Table 5. Part Numbering System : X1X2X3X4X5X6X7X8 X9
Part Number Code
Description
Part Number
Value
X1
Company
S
SSC
X2
Package Type
T
TOP LED
X3X4
Color
DR
Deep Red
X5
Package series
G
T6 Series
X6
Number of Chip
1
1 Chip
X7
Number of Pin
6
6 Pin
X8X9
Product Revision
AB
-
Table 6. Lot Numbering System :Y1Y2Y3Y4Y5Y6Y7Y8Y9Y10–Y11Y12Y13Y14Y15Y16Y17
Lot Number Code
Description
Y1Y2
Year
Y3
Month
Y4Y5
Day
Y6
Top View LED series
Y7Y8Y9Y10
Mass order
Y11Y12Y13Y14Y15Y16Y17
Internal Number
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Lot Number
17
Value
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STDRG16A-T6 Deep Red-B
Recommended Solder Pad
Notes :
(1) All dimensions are in millimeters.
(2) Scale : none
(3) This drawing without tolerances are for reference only.
(4) Undefined tolerance is ±0.1mm.
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STDRG16A-T6 Deep Red-B
Reflow Soldering Characteristics
IPC/JEDEC J-STD-020
Table 7.
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate (Tsmax to Tp)
3° C/second max.
3° C/second max.
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-180 seconds
Time maintained above:
- Temperature (TL)
- Time (tL)
183 °C
60-150 seconds
217 °C
60-150 seconds
Peak Temperature (Tp)
215℃
260℃
Time within 5°C of actual Peak
Temperature (tp)2
10-30 seconds
20-40 seconds
Ramp-down Rate
6 °C/second max.
6 °C/second max.
Time 25°C to Peak Temperature
6 minutes max.
8 minutes max.
Caution
(1) Reflow soldering is recommended not to be done more than two times. In the case of more than
24 hours passed soldering after first, LEDs will be damaged.
(2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable,
suitable tools must be used.
(3) Die slug is to be soldered.
(4) When soldering, do not put stress on the LEDs during heating.
(5) After soldering, do not warp the circuit board.
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STDRG16A-T6 Deep Red-B
Handling of Silicone Resin for LEDs
(1) During processing, mechanical stress on the surface should be minimized as much as possible.
Sharp objects of all types should not be used to pierce the sealing compound.
(2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs
without a silicone sealant, since the surface can also become scratched.
(3) When populating boards in SMT production, there are basically no restrictions regarding the form of
the pick and place nozzle, except that mechanical pressure on the surface of the resin must be
prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector
area.
(4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions
must be considered during the handling of such devices. Compared to standard encapsulants,
silicone is generally softer, and the surface is more likely to attract dust.
As mentioned previously, the increased sensitivity to dust requires special care during processing.
In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning
solution must be applied to the surface after the soldering of components.
(5) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are used,
it must be assured that these solvents do not dissolve the package or resin.
Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED.
(6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this.
product with acid or sulfur material in sealed space.
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Precaution for Use
(1) Storage
To avoid the moisture penetration, we recommend store in a dry box with a desiccant.
The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of
RH50%.
(2) Use Precaution after Opening the Packaging
Use proper SMT techniques when the LED is to be soldered dipped as separation of the lens may
affect the light output efficiency.
Pay attention to the following:
a. Recommend conditions after opening the package
- Sealing
- Temperature : 5 ~ 30℃ Humidity : less than RH60%
b. If the package has been opened more than 1 year (MSL_2) or the color of the desiccant
changes, components should be dried for 10-12hr at 65±5℃
(3) Do not apply mechanical force or excess vibration during the cooling process to normal
temperature after soldering.
(4) Do not rapidly cool device after soldering.
(5) Components should not be mounted on warped (non coplanar) portion of PCB.
(6) Radioactive exposure is not considered for the products listed here in.
(7) Gallium arsenide is used in some of the products listed in this publication.
These products are dangerous if they are burned or shredded in the process of disposal.
It is also dangerous to drink the liquid or inhale the gas generated by such products when
chemically disposed of.
(8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc.
When washing is required, IPA (Isopropyl Alcohol) should be used.
(9) When the LEDs are in operation the maximum current should be decided after measuring
the package temperature.
(10) ) LEDs must be stored properly to maintain the device. We recommend to store the products in
sealed container with a nitrogen atmosphere
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STDRG16A-T6 Deep Red-B
Precaution for Use
(11) The appearance and specifications of the product may be modified for improvement without
notice.
(12) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration.
(13) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures
can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic
energy. The result can be a significant loss of light output from the fixture. Knowledge of the
properties of the materials selected to be used in the construction of fixtures can help prevent
these issues.
(14) Attaching LEDs, do not use adhesives that outgas organic vapor.
(15) The driving circuit must be designed to allow forward voltage only when it is ON or OFF.
If the reverse voltage is applied to LED, migration can be generated resulting in LED damage.
(16) Similar to most Solid state devices;
LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS).
Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects.
a. ESD (Electro Static Discharge)
Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come
into contact. While most ESD events are considered harmless, it can be an expensive problem in
many industrial environments during production and storage. The damage from ESD to an LEDs may
cause the product to demonstrate unusual characteristics such as:
- Increase in reverse leakage current lowered turn-on voltage
- Abnormal emissions from the LED at low current
The following recommendations are suggested to help minimize the potential for an ESD event.
One or more recommended work area suggestions:
- Ionizing fan setup
- ESD table/shelf mat made of conductive materials
- ESD safe storage containers
One or more personnel suggestion options:
- Antistatic wrist-strap
- Antistatic material shoes
- Antistatic clothes
Environmental controls:
- Humidity control (ESD gets worse in a dry environment)
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STDRG16A-T6 Deep Red-B
Precaution for Use
b. EOS (Electrical Over Stress)
Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is
subjected to a current or voltage that is beyond the maximum specification limits of the device.
The effects from an EOS event can be noticed through product performance like:
- Changes to the performance of the LED package
(If the damage is around the bond pad area and since the package is completely encapsulated
the package may turn on but flicker show severe performance degradation.)
- Changes to the light output of the luminaire from component failure
- Components on the board not operating at determined drive power
Failure of performance from entire fixture due to changes in circuit voltage and current across total
circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed
to electrical overstress as the failure modes have been investigated to vary, but there are some
common signs that will indicate an EOS event has occurred:
- Damaged may be noticed to the bond wires (appearing similar to a blown fuse)
- Damage to the bond pads located on the emission surface of the LED package
(shadowing can be noticed around the bond pads while viewing through a microscope)
- Anomalies noticed in the encapsulation and phosphor around the bond wires
- This damage usually appears due to the thermal stress produced during the EOS event
c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing:
- A surge protection circuit
- An appropriately rated over voltage protection device
- A current limiting device
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STDRG16A-T6 Deep Red-B
Company Information
Published by
Seoul Semiconductor © 2013 All Rights Reserved.
Company Information
Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of
light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage
and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than
10,000 patents globally, while offering a wide range of LED technology and production capacity in
areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs.
The company’s broad product portfolio includes a wide array of package and device choices such as
Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type
LEDs as well as custom modules, displays, and sensors.
Legal Disclaimer
Information in this document is provided in connection with Seoul Semiconductor products. With
respect to any examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party. The appearance and specifications of the product can be changed
to improve the quality and/or performance without notice.
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