Product Data Sheet SAW82F1D – Chip on Board Enable High Flux and Cost Efficient System Z Power Chip on board – ZC series SAW82F1D RoHS Product Brief Description Features and Benefits • The ZC series are LED arrays which provide High Flux and High Efficacy. • Especially it is designed for easy assembly of lighting fixtures by eliminating reflow soldering process. • It‘s thermal management is better than other power LED solutions with wide Metal area. • • • • • • • • ZC series are ideal light sources for general lighting applications including Replacement Lamps, Industrial & Commercial Lightings and other high lumen required applications. Size 10.8mm * 10.8mm Power dissipation 5.6W ErP 6-step binning High Color quality with CRI Min.80(R9>0) Uniformed Shadow Excellent Thermal management RoHS compliant Key Applications • • • Replacement Lamps – Bulb, MR16, PAR Commercial – Downlight Residential Table 1. Product Selection Table CCT [K] Part Number SAW82F1D Rev1.0, Apr 6, 2016 Color Min. Typ. Max. Cool White 4,700K 5,600K 7,000K Neutral White 3,700K 4,200K 4,700K Warm White 2,600K 3,000K 3,700K 1 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Table of Contents Index • Product Brief 1 • Table of Contents 2 • Product Performance & Characterization Guide 3 • Characteristics Graph 5 • Product Nomenclature (Labeling Information) 11 • Color Bin Structure 12 • Mechanical Dimensions 14 • Handling of Silicone Resin for LEDs 17 • Precaution For Use 18 • Company Information 21 Rev1.0, Apr 6, 2016 2 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Performance Characteristics Table 2. Electro Optical Characteristics, IF=30mA CCT (K) Part Number SAW82F1D [1] Typical Luminous Flux [2] ФV [3] [lm] Typ. Tj=25℃ Tj=85℃ 6500 715 645 4000 755 680 3000 695 625 Typical Forward Voltage [V] Tj=25℃ 188 Tj=85℃ 178 CRI [5], Ra Viewing Angle [degrees] 2Θ ½ Min. Typ. 80 120 80 120 80 120 Notes for Table 2: 1. Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color coordinate(x, y) : 0.005, CCT 5% tolerance. 2. Seoul Semiconductor maintains a tolerance of ±5% on flux and power measurements. 3. ФV is the total luminous flux output as measured with an integrating sphere. 4. Tolerance is ±3% on forward voltage measurements. 5. Tolerance is ±2 on CRI measurements. * No values are provided by real measurement. Only for reference purpose. Rev1.0, Apr 6, 2016 3 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Performance Characteristics Table 3. Absolute Maximum Characteristics, Tj=25ºC Value Parameter Symbol Unit Min. Typ. Max. Forward Current IF - 30 50 mA Power Dissipation Pd - 5.4 10 W Tj - - 125 ºC Operating Temperature Topr -40 - 85 ºC Surface Temperature TS - - 100 ºC Storage Temperature Tstg -40 - 100 ºC Thermal resistance (J to S) RthJS - 2.5 - K/W ESD Sensitivity(HBM) [2] - Junction Temperature [1] Class 2 JESD22-A114-E Notes for Table 3 : 1. At thermal Resistance, J to S means junction to COB’s metal PCB bottom. 2. At ESD Sensitivity, Class 2 is voltage level between 2000V and 4000V. 3. Thermal resistance : RthJS (Junction / solder) • LED’s properties might be different from suggested values like above and below tables if operation condition will be exceeded our parameter range. Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. • Thermal resistance can be increased substantially depending on the heat sink design/operating condition, and the maximum possible driving current will decrease accordingly. • All measurements were made under the standardized environment of Seoul Semiconductor. Rev1.0, Apr 6, 2016 4 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Characteristics Graph Fig 1. Color Spectrum, IF=30mA, Tj=25℃ Relative Radiant Power [%] 100 6500K 4000K 3000K 80 60 40 20 0 400 500 600 700 800 Wavelength [nm] Fig 2. Radiant pattern, IF=30mA, Tj=25℃ Relative Luminous Intensity [%] 100 80 60 40 20 0 -100 -75 -50 -25 0 25 50 75 100 Angular Displacement [degree] Rev1.0, Apr 6, 2016 5 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Characteristics Graph Fig 3. Forward Voltage vs. Forward Current, Tj=85℃ 60 Forward Current [mA] 50 40 30 20 10 0 150 160 170 180 190 200 Forward Voltage [V] Fig 4. Forward Current vs. Relative Luminous Flux, T j=85℃ 180 Relative Luminous Flux [%] 150 120 90 60 30 0 0 10 20 30 40 50 60 Forward Current [mA] Rev1.0, Apr 6, 2016 6 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Characteristics Graph Fig 5. Relative Light Output vs. Junction Temperature, IF=30mA CCT: 3000K Relative Luminous Flux [%] 100 80 60 40 20 0 20 40 60 80 100 120 140 o Junction Temperature [ C] Fig 6. Forward Voltage vs. Junction Temperature, IF=30mA CCT: 3000K Relative forward voltage[%] 100 80 60 40 20 0 20 40 60 80 100 120 140 o Junction Temperature [ C] Rev1.0, Apr 6, 2016 7 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Characteristics Graph Fig 7. Forward Current vs. CIE x, y Shift, Tj = 85ºC CCT: 3700-7000K 0.02 Relative Variation[a.u.] CIEx CIEy 0.01 0.00 -0.01 -0.02 20 30 40 50 60 70 80 Forward Current [mA] CCT: 2600-3700K 0.02 Relative Variation[a.u.] CIEx CIEy 0.01 0.00 -0.01 -0.02 20 30 40 50 60 70 80 Forward Current [mA] Rev1.0, Apr 6, 2016 8 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Characteristics Graph Fig 8. Junction Temperature vs. CIE x, y Shift, IF=30mA CCT: 3700-7000K 0.02 Relative Variation[a.u.] CIEx CIEy 0.01 0.00 -0.01 -0.02 25 50 75 100 125 150 o Junction Temperature [ C] CCT: 2600-3700K 0.02 Relative Variation[a.u.] CIEx CIEy 0.01 0.00 -0.01 -0.02 25 50 75 100 125 150 o Junction Temperature [ C] Rev1.0, Apr 6, 2016 9 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Characteristics Graph Fig 9. Ambient Temperature vs. Maximum Forward Current, Tj(max.)=125℃ 60 Forward Current [mA] 50 40 30 20 Rth(j-a) = 6K/W Rth(j-a) = 8K/W Rth(j-a) = 10K/W 10 0 0 20 40 60 80 100 120 O Ambient Temperature Ta [ C] Rev1.0, Apr 6, 2016 10 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Product Nomenclature Table 4. Part Numbering System : X1X2X3 X4X5 X6X7 X8 Part Number Code Description Part Number Value X1 Company S X2 Package series A X3X4 Color Specification W8 X5 Series number 2 X6 Lens type F Flat X7 PCB type 1 PCB X8 Revision number D CRI 80 Table 5. Lot Numbering System : Y1Y2Y3Y4Y5Y6 – Y7Y8Y9Y10 – Y11Y12Y13 Lot Number Code Description Y1Y2 Year Y3Y4 Month Y5Y6 Day Y7Y8Y9Y10 Mass order Y11Y12Y13 Tray No. Rev1.0, Apr 6, 2016 Lot Number 11 Value www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Color Bin Structure CIE Chromaticity Diagram, IF = 20mA, Ts=85℃ 0.45 2700K 3000K 0.42 4000K 0.39 Y 5000K 0.36 6500K 0.33 ANSI ErP 6step Ellipse 0.30 0.30 0.33 0.36 0.39 0.42 0.45 0.48 X Center Point a b Ellipse Rotation Angle(degrees) 0.3370 0.02622 0.01136 57.46 0.3460 0.3590 0.03273 0.01397 57.48 0.3800 0.3800 0.03786 0.01642 53.92 GE6 0.4400 0.4030 0.03492 0.01678 53.85 HE6 0.4630 0.4200 0.02985 0.01598 57.59 CCT Rank 6500K Cx Cy AE6 0.3130 5000K CE6 4000K EE6 3000K 2700K Notes : 1. Cx and Cy are the center coordinates of the ellipse, a the length of the major axis, b the length of the minor axis and Θ the angle of the major axis as defined in IEC 60081. Rev1.0, Apr 6, 2016 12 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Color Bin Structure Table 6. Bin Code description, IF = 30mA Luminous Flux (lm) [1] Part Number Tj=25℃ Tj=85℃ Bin No. Min. Max. Min. Max. B2 630 700 561 623 B3 700 770 623 685 Color Chromaticity Coordinate @ IF = 30mA, Tj=85℃ Refer to page.12 SAW82F1D Typical Forward Voltage (V) Tj=25℃ Bin No. Min. Max. Min. Max. X5 180 190 170 180 X6 190 200 180 190 Available ranks Table 7. Ordering Information(Bin Code) Part Number Tj=85℃ CCT CIE LF rank VF rank 6000~7000K A B2 B3 X5 X6 5300~6000K B B2 B3 X5 X6 4700~5300K C B2 B3 X5 X6 3700~4200K D B2 B3 X5 X6 3700~4200K E B2 B3 X5 X6 3100~3700K F B2 B3 X5 X6 2900~3100K G B2 B3 X5 X6 2600~2900K H B2 B3 X5 X6 SAW82F1D Notes for Table 6: 1. Flux values @ 85 °C are calculated and for reference only. Rev1.0, Apr 6, 2016 13 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Mechanical Dimensions Top view Side view Marking1 < Inner Circuit Diagram> Cathode X6 Anode Notes : 1. 2. 3. All dimensions are in millimeters. Scale : none Undefined tolerance is ±0.2mm Rev1.0, Apr 6, 2016 14 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Packaging Specification Top view Side view Notes : 1. 2. 3. Quantity : 30pcs/Tray All dimensions are in millimeters (tolerance : ±0.3) Scale none Rev1.0, Apr 6, 2016 15 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Packaging Specification Aluminum Bag Outer Box Notes : 1. Heat Sealed after packing (Use Zipper Bag) 2. Quantity : 3Tray(90pcs) /Bag Rev1.0, Apr 6, 2016 16 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Handling of Silicone Resin for LEDs (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs without a silicone sealant, since the surface can also become scratched. (3) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of wire. (4) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. (5) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this product with acid or sulfur material in sealed space. (6) Avoid leaving fingerprints on silicone resin parts. Rev1.0, Apr 6, 2016 17 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Precaution for Use (1) Storage To avoid the moisture penetration, we recommend storing Power LEDs in a dry box with a desiccant. (2) For manual soldering Seoul Semiconductor recommends the soldering condition (ZC series product is not adaptable to reflow process) a. Use lead-free soldering b. Soldering should be implemented using a soldering equipment at temperature lower than 350°C. c. Before proceeding the next step, product temperature must be stabilized at room temperature. (3) Components should not be mounted on warped (non coplanar) portion of PCB. (4) Radioactive exposure is not considered for the products listed here in. (5) It is dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed of. (6) This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA (Isopropyl Alcohol) should be used. (7) When the LEDs are in operation the maximum current should be decided after measuring the package temperature. (8) The appearance and specifications of the product may be modified for improvement without notice. (9) Long time exposure of sun light or occasional UV exposure will cause silicone discoloration. (10) Attaching LEDs, do not use adhesive that outgas organic vapor. (11) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the reverse voltage is applied to LED, migration can be generated resulting in LED damage. (12) Please do not touch any of the circuit board, components or terminals with bare hands or metal while circuit is electrically active. Rev1.0, Apr 6, 2016 18 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Precaution for Use (13) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. The result can be a significant loss of light output from the fixture. Knowledge of the properties of the materials selected to be used in the construction of fixtures can help prevent these issues. (14) LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects. Ⅰ. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LEDs may cause the product to demonstrate unusual characteristics such as: - Increase in reverse leakage current lowered turn-on voltage - Abnormal emissions from the LED at low current The following recommendations are suggested to help minimize the potential for an ESD event. One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls: - Humidity control (ESD gets worse in a dry environment) Rev1.0, Apr 6, 2016 19 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Precaution for Use Ⅱ. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: - Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - Changes to the light output of the luminaire from component failure - Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred: - Damaged may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires. - This damage usually appears due to the thermal stress produced during the EOS event. Ⅲ. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing: - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device Rev1.0, Apr 6, 2016 20 www.seoulsemicon.com Product Data Sheet SAW82F1D – Chip on Board Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, deep UV LEDs, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT - Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich, high-brightness LEDs, mid-power LEDs, side-view LEDs, through-hole type LED lamps, custom displays, and sensors. The company is vertically integrated from epitaxial growth and chip manufacture in it’s fully owned subsidiary, Seoul Viosys, through packaged LEDs and LED modules in three Seoul Semiconductor manufacturing facilities. Seoul Viosys also manufactures a wide range of unique deep-UV wavelength devices. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice. Rev1.0, Apr 6, 2016 21 www.seoulsemicon.com