SDWx3F1C ZC18 Rev3.0

Product Data Sheet
SDWx3F1C – Chip on Board
Enable High Flux and Cost Efficient System
Z Power Chip on board – ZC series
SDWx3F1C (SDW03F1C, SDW83F1C, SDW93F1C)
LM-80
MacAdam
3-Step
RoHS
Product Brief
Description
Features and Benefits
•
The ZC series are LED arrays which
provide High Flux and High Efficacy.
•
It is especially designed for easy
assembly of lighting fixtures by
eliminating reflow soldering process.
•
It‘s thermal management is better than
other power LED solutions with wide
Metal area.
•
•
•
•
•
•
•
•
•
•
ZC series are ideal light sources for
General Lighting applications including
Replacement Lamps, Industrial &
Commercial Lightings and other high
Lumen required applications.
Size 19mm * 19 mm
Power dissipation 18 ~ 37.6W
Wide CCT range with CRI70~90
Forward current typ 36.1V
Maximum Current 920mA
MacAdam 3-step binning
Uniformed Shadow
Excellent Thermal management
RoHS compliant
Key Applications
•
•
•
•
Commercial – Downlight
Industrial – High/Low Bay lighting
Residential
Replacement lamps – Bulb, PAR
Table 1. Product Selection Table
CCT [K]
Part Number
Color
Min.
Typ.
Max.
Cool White
4,700
-
6,000
Neutral White
3,700
-
4,700
Cool White
4,700
-
6,000
Neutral White
3,700
-
4,700
Warm White
2,600
-
3,700
Neutral White
3,700
-
4,200
Warm White
2,600
-
3,700
SDW03F1C
SDW83F1C
SDW93F1C
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Table of Contents
Index
•
Product Brief
1
•
Table of Contents
2
•
Performance Characteristics
3
•
Characteristics Graph
6
•
Color Bin Structure
14
•
Mechanical Dimensions
19
•
Packaging Specification
20
•
Product Nomenclature (Labeling Information)
22
•
Handling of Silicone Resin for LEDs
23
•
Precaution For Use
24
•
Company Information
27
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Product Performance & Characterization Guide
Table 2. Electro Optical Characteristics, Tj=25ºC
CCT (K)
Part Number
[1]
Typical Luminous Flux [2],
ФV [3] (lm)
Typical Forward Voltage,
VF [4] (V)
CRI [5],
Ra
Viewing
Angle
(degrees)
2Θ ½
Typ.
500mA
920mA*
500mA
920mA*
Min.
Typ.
5600
2669
4431
36.1
37.8
70
120
5000
2688
4462
36.1
37.8
70
120
4500
2672
4435
36.1
37.8
70
120
4000
2667
4427
36.1
37.8
70
120
5600
2460
4108
36.1
37.8
80
120
5000
2475
4133
36.1
37.8
80
120
4000
2458
4080
36.1
37.8
80
120
3500
2415
4009
36.1
37.8
80
120
3000
2410
4024
36.1
37.8
80
120
2700
2367
3952
36.1
37.8
80
120
4000
2089
3448
36.1
37.8
90
120
3500
2084
3438
36.1
37.8
90
120
3000
2058
3416
36.1
37.8
90
120
2700
1902
3157
36.1
37.8
90
120
SDW03F1C
SDW83F1C
SDW93F1C
Notes :
(1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color
coordinate : 0.005, CCT 5% tolerance.
(2) Seoul Semiconductor maintains a tolerance of ±7% on flux and power measurements.
(3) ФV is the total luminous flux output as measured with an integrating sphere.
(4) Tolerance is ±3% on forward voltage measurements.
(5) Tolerance is ±2 on CRI measurements.
* No values are provided by real measurement. Only for reference purpose.
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Product Performance & Characterization Guide
Table 3. Electro Optical Characteristics, Tj=85ºC
CCT (K) [1]
Typical Luminous Flux [2],
ФV [3] (lm)
Typical Forward Voltage,
VF [4] (V)
Typ.
500mA *
500mA *
5600
2416
34.6
5000
2433
34.6
4500
2418
34.6
4000
2414
34.6
5600
2214
34.6
5000
2228
34.6
4000
2212
34.6
3500
2174
34.6
3000
2169
34.6
2700
2130
34.6
4000
1828
34.6
3500
1824
34.6
3000
1801
34.6
2700
1664
34.6
Part Number
SDW03F1C
SDW83F1C
SDW93F1C
Notes :
(1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color
coordinate : 0.005, CCT 5% tolerance.
(2) Seoul Semiconductor maintains a tolerance of ±7% on flux and power measurements.
(3) ФV is the total luminous flux output as measured with an integrating sphere.
(4) Tolerance is ±3% on forward voltage measurements.
(5) Tolerance is ±2 on CRI measurements.
* No values are provided by real measurement. Only for reference purpose.
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Product Performance & Characterization Guide
Table 4. Absolute Maximum Characteristics, Tj=25ºC
Value
Parameter
Symbol
Unit
Min.
Typ.
Max.
Forward Current
IF
-
0.5
0.92
A
Power Dissipation
Pd
-
18
37.6
W
Junction Temperature
Tj
-
-
140
ºC
Operating Temperature
Topr
-40
-
85
ºC
Surface Temperature
TS
-
-
100
ºC
Storage Temperature
Tstg
-40
-
100
ºC
Thermal resistance (J to S) [1]
RthJS
-
0.84
-
K/W
ESD Sensitivity(HBM)
-
Class 3A JESD22-A114-E
Notes :
(1) Thermal resistance : RthJS (Junction / solder)
•
LED’s properties might be different from suggested values like above and below tables if
operation condition will be exceeded our parameter range. Care is to be taken that power
dissipation does not exceed the absolute maximum rating of the product.
•
Thermal resistance can be increased substantially depending on the heat sink design/operating
condition, and the maximum possible driving current will decrease accordingly.
•
All measurements were made under the standardized environment of Seoul Semiconductor.
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Characteristics Graph
Fig 1. Color Spectrum, Tj=25℃, IF=500mA (CRI70)
120
CRI70(5000K)
CRI70(4000K)
Relative Intensity(%)
100
80
60
40
20
0
400
450
500
550
600
650
700
750
800
Wavelength (nm)
Fig 2. Color Spectrum, Tj=25℃, IF=500mA (CRI80)
120
CRI80(5000K)
CRI80(4000K)
CRI80(3000K)
Relative Intensity(%)
100
80
60
40
20
0
400
450
500
550
600
650
700
750
800
Wavelength (nm)
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Characteristics Graph
Fig 3. Color Spectrum, Tj=25℃, IF=500mA (CRI90)
120
CRI90(4000K)
CRI90(2700K)
Relative Intensity(%)
100
80
60
40
20
0
400
450
500
550
600
650
700
750
800
Wavelength (nm)
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Product Data Sheet
SDWx3F1C – Chip on Board
Characteristics Graph
Fig 4. Radiant pattern, Tj=25℃, IF=500mA
Relative Intensity (%)
100
75
50
25
0
-100
-75
-50
-25
0
25
50
75
100
Angle (Degrees)
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Product Data Sheet
SDWx3F1C – Chip on Board
Characteristics Graph
Fig 5. Forward Voltage vs. Forward Current, Tj=25℃
1.0
Voltage (A)
0.8
0.6
0.4
0.2
0.0
28
30
32
34
36
38
40
Current (V)
Fig 6. Forward Current vs. Relative Luminous Flux, T j=25℃
Relative Luminous Flux (%)
200
160
120
80
40
0
0.2
0.4
0.6
0.8
1.0
Foward Current (A)
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Characteristics Graph
Fig 7. Junction Temperature vs. Relative Light Output, IF=500mA
Relative luminous flux (%)
120
100
80
60
40
20
0
25
50
75
100
125
150
o
Junction Temperature ( C)
Fig 8. Junction Temperature vs. Forward Voltage, IF=500mA
0.5
Foward Voltage (V)
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
25
50
75
100
125
150
o
Junction Temperature( C)
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Characteristics Graph
Fig 9. Junction Temperature vs. CIE X, Y Shift, IF=500mA (CRI70)
0.03
CIE X(5000K)
CIE Y(5000K)
Relative Variation
0.02
0.01
0.00
-0.01
-0.02
-0.03
20
40
60
80
100
120
140
o
Jinction Temperature( C)
Fig 10. Junction Temperature vs. CIE X, Y Shift, IF=500mA (CRI90)
0.03
CIE X(3000K)
CIE Y(3000K)
Relative Variation
0.02
0.01
0.00
-0.01
-0.02
-0.03
20
40
60
80
100
120
140
o
Junction Temperature( C)
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Characteristics Graph
Fig 11. Junction Temperature vs. CIE X, Y Shift, IF=500mA (CRI80)
0.03
CIE X(5000K)
CIE Y(5000K)
Relative Variation
0.02
0.01
0.00
-0.01
-0.02
-0.03
20
40
60
80
100
120
140
o
Junction Temperature ( C)
0.03
CIE X(3000K)
CIE Y(3000K)
Relative Variation
0.02
0.01
0.00
-0.01
-0.02
-0.03
20
40
60
80
100
120
140
o
Junction Temperature ( C)
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Characteristics Graph
Fig 12. Surface Temperature vs. Maximum Forward Current, Tj(max.)=140℃
Maximum Current (A)
1.2
0.8
0.4
0.0
20
40
60
80
100
120
o
Surface Temperature ( C)
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Color Bin Structure
Table 7. Bin Code description
Luminous Flux (lm)
@ IF = 500mA
Part Number
SDW03F1C
Bin Code
Min.
Max.
H1
1800
2400
H2
2400
2900
J1
2900
3400
G2
1600
1800
H1
1800
2400
H2
2400
2900
J1
2900
3400
G2
1600
1800
Refer to
page.15~18
H1
1800
2400
H2
2400
2900
Bin Code
Min.
Max.
E
34.0
38.0
F
38.0
40.0
E
34.0
38.0
F
38.0
40.0
E
34.0
38.0
F
38.0
40.0
Refer to
page.15~18
SDW83F1C
SDW93F1C
Typical Forward Voltage (Vf)
@ IF = 500mA
Color
Chromaticity
Coordinate
@ IF = 500mA
Refer to
page.15~18
Available ranks
Table 8. Ordering Information(Bin Code)
Part
Number
CCT
CIE
LF rank
VF rank
5300~6000K
B
H1
H2
J1
E
F
4700~5300K
C
H1
H2
J1
E
F
4200~4700K
D
H1
H2
J1
E
F
3700~4200K
E
H1
H2
J1
E
F
5300~6000K
B
G2
H1
H2
J1
E
F
4700~5300K
C
G2
H1
H2
J1
E
F
3700~4200K
E
G2
H1
H2
J1
E
F
3200~3700K
F
G2
H1
H2
J1
E
F
2900~3700K
G
G2
H1
H2
J1
E
F
2600~2900K
H
G2
H1
H2
J1
E
F
3700~4200K
E
G2
H1
H2
E
F
3200~3700K
F
G2
H1
H2
E
F
2900~3200K
G
G2
H1
H2
E
F
2600~2900K
H
G2
H1
H2
E
F
SDW03F1C
SDW83F1C
SDW93F1C
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Color Bin Structure
CIE Chromaticity Diagram
0.42
Y
0.39
0.36
0.33
0.33
0.36
0.39
0.42
0.45
0.48
X
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Product Data Sheet
SDWx3F1C – Chip on Board
Color Bin Structure
CIE Chromaticity Diagram, Tj=25℃, IF=500mA
0.38
4700K
5000K
C1
5300K
C0
0.36
5600K
B1
C2
B0
B3
C4
B2
B5
Y
6000K
0.34
C3
C5
B4
0.32
0.32
0.34
0.36
X
B0
B1
B2
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3207
0.3462
0.3292
0.3539
0.3212
0.3389
0.3212
0.3389
0.3293
0.3461
0.3217
0.3316
0.3293
0.3461
0.3373
0.3534
0.3293
0.3384
0.3292
0.3539
0.3376
0.3616
0.3293
0.3461
B3
B4
B5
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3293
0.3461
0.3217
0.3316
0.3293
0.3384
0.3293
0.3384
0.3222
0.3243
0.3294
0.3306
0.3369
0.3451
0.3294
0.3306
0.3366
0.3369
0.3373
0.3534
0.3293
0.3384
0.3369
0.3451
C0
C1
C2
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3376
0.3616
0.3463
0.3687
0.3373
0.3534
0.3373
0.3534
0.3456
0.3601
0.3369
0.3451
0.3456
0.3601
0.3539
0.3669
0.3448
0.3514
0.3463
0.3687
0.3552
0.3760
0.3456
0.3601
C3
C4
C5
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3456
0.3601
0.3369
0.3451
0.3448
0.3514
0.3448
0.3514
0.3366
0.3369
0.3440
0.3428
0.3526
0.3578
0.3440
0.3428
0.3514
0.3487
0.3539
0.3669
0.3448
0.3514
0.3526
0.3578
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Product Data Sheet
SDWx3F1C – Chip on Board
Color Bin Structure
CIE Chromaticity Diagram, Tj=25℃, IF=500mA
3700K
0.40
4000K
E22
4200K
E21 E11
4500K
0.38
Y
E10
D22
4700K
E24
D21 D11
E23
D10
0.36
D24
D23
0.34
0.34
ANSI
MacAdam 3-STEP
MacAdam 4-STEP
0.36
0.38
0.40
X
3-STEP
4-STEP
D10
E10
D11
E11
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3589
0.3685
0.3764
0.3713
0.3560
0.3557
0.3746
0.3689
0.3665
0.3742
0.3793
0.3828
0.3580
0.3697
0.3784
0.3841
0.3637
0.3622
0.3890
0.3887
0.3681
0.3771
0.3914
0.3922
0.3573
0.3579
0.3854
0.3768
0.3645
0.3618
0.3865
0.3762
ANSI
D21
D22
D23
D24
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3528
0.3599
0.3628
0.3732
0.3601
0.3587
0.3511
0.3466
0.3548
0.3736
0.3641
0.3805
0.3645
0.3618
0.3528
0.3599
0.3641
0.3805
0.3736
0.3874
0.3663
0.3699
0.3570
0.3631
0.3628
0.3732
0.3703
0.3728
0.3703
0.3728
0.3560
0.3558
0.3580
0.3697
0.3663
0.3699
0.3670
0.3578
0.3601
0.3587
0.3570
0.3631
0.3681
0.3771
0.3590
0.3521
0.3590
0.3521
E21
E22
E23
E24
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3703
0.3726
0.3890
0.3842
0.3670
0.3578
0.3784
0.3647
0.3736
0.3874
0.3914
0.3922
0.3703
0.3726
0.3806
0.3725
0.3871
0.3959
0.3849
0.3881
0.3765
0.3765
0.3865
0.3762
0.3849
0.3881
0.3871
0.3959
0.3746
0.3689
0.3890
0.3842
0.3784
0.3841
0.4006
0.4044
0.3806
0.3725
0.3952
0.3880
0.3765
0.3765
0.3952
0.3880
0.3784
0.3647
0.3898
0.3716
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Product Data Sheet
SDWx3F1C – Chip on Board
Color Bin Structure
CIE Chromaticity Diagram, Tj=25℃, IF=500mA
0.44
3000K
0.42
3500K
0.40
H22
H11
G22
G21
F22
3700K
Y
H21
3200K
2600K
2700K
2900K
H10
G11
G10
F21
F11
F10
G24
G23
H24
H23
F24
0.38
F23
ANSI
MacAdam 3-STEP
MacAdam 4-STEP
0.36
0.38
0.40
0.42
0.44
0.46
0.48
X
3-STEP
F10
4-STEP
G10
H10
F11
G11
H11
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.4006
0.3829
0.4267
0.3946
0.4502
0.4020
0.3981
0.3800
0.4243
0.3922
0.4477
0.3998
0.4051
0.3954
0.4328
0.4079
0.4576
0.4158
0.4040
0.3966
0.4324
0.4100
0.4575
0.4182
0.4159
0.4007
0.4422
0.4113
0.4667
0.4180
0.4186
0.4037
0.4451
0.4145
0.4697
0.4211
0.4108
0.3878
0.4355
0.3977
0.4588
0.4041
0.4116
0.3865
0.4361
0.3964
0.4591
0.4025
ANSI
F21
F22
F23
F24
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.4148
0.3996
0.3943
0.4013
0.4040
0.4113
0.4090
0.4015
0.3853
0.3887
0.3966
0.4002
0.4013
0.3943
0.3889
0.4018
0.4049
0.3981
0.3887
0.3853
0.3690
0.3752
0.3833
0.3800
0.4223
0.4153
0.4116
0.4049
0.4018
0.4147
0.3990
0.3955
0.3865
0.3833
0.3752
0.3814
0.4299
0.4148
0.4113
0.4186
0.4153
0.4223
0.4165
0.4090
0.4002
0.4037
0.3955
0.3990
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.4223
0.4299
0.4430
0.4387
0.4324
0.4284
0.3990
0.4165
0.4212
0.4122
0.4100
0.4011
0.4406
0.4451
0.4387
0.4430
0.4562
0.4468
0.4055
0.4145
0.4122
0.4212
0.4260
0.4077
0.4147
0.4223
0.4284
0.4243
0.4302
0.4259
0.3814
0.3990
0.4011
0.3922
0.3943
0.3853
0.4259
0.4302
0.4361
0.4406
0.4468
0.4373
0.3853
0.3943
0.3964
0.4055
0.4077
0.3893
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.4468
0.4562
0.4687
0.4636
0.4575
0.4526
0.4077
0.4260
0.4289
0.4197
0.4182
0.4090
0.4644
0.4697
0.4636
0.4687
0.4810
0.4703
0.4118
0.4211
0.4197
0.4289
0.4319
0.4132
0.4373
0.4468
0.4526
0.4477
0.4534
0.4483
0.3893
0.4077
0.4090
0.3998
0.4012
0.3919
0.4483
0.4534
0.4591
0.4644
0.4703
0.4593
0.3919
0.4012
0.4025
0.4118
0.4132
0.3944
G21
G22
H21
G23
H22
Rev3.0, Dec 2, 2015
G24
H23
18
H24
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Product Data Sheet
SDWx3F1C – Chip on Board
Mechanical Dimensions
Circuit
S2
Cathode
Ts
X 12
X 12
X 12
X 12
Anode
Notes :
(1) All dimensions are in millimeters.
(2) Scale : none
(3) Undefined tolerance is ±0.2mm
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Packaging Specification
Notes :
(1) Quantity : 20pcs/Tray
(2) All dimensions are in millimeters (tolerance : ±0.3)
(3) Scale none
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Packaging Specification
Notes :
(1) Heat Sealed after packing (Use Zipper Bag)
(2) Quantity : 3Tray(60pcs) /Bag
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Product Nomenclature
Table 5. Part Numbering System : X1X2X3 X4X5 X6X7 X8
Part Number Code
Description
Part Number
Value
X1
Company
S
X2
Package series
D
X3X4
Color Specification
W0
CRI 70
W8
CRI 80
W9
CRI 90
X5
Series number
3
X6
Lens type
F
Flat
X7
PCB type
1
PCB
X8
Revision number
C
New COB type
Table 6. Lot Numbering System : Y1Y2Y3Y4Y5Y6 – Y7Y8Y9Y10 – Y11Y12Y13
Lot Number Code
Description
Y1Y2
Year
Y3Y4
Month
Y5Y6
Day
Y7Y8Y9Y10
Mass order
Y11Y12Y13
Tray No.
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Handling of Silicone Resin for LEDs
(1) During processing, mechanical stress on the surface should be minimized as much as possible.
Sharp objects of all types should not be used to pierce the sealing compound.
(2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs
without a silicone sealant, since the surface can also become scratched.
(3) Silicone differs from materials conventionally used for the manufacturing of LEDs.
These conditions must be considered during the handling of such devices. Compared to standard
encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As
mentioned previously, the increased sensitivity to dust requires special care during processing.
In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning
solution must be applied to the surface after the soldering of wire.
(4) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are
used, it must be
assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not
recommended. Ultrasonic cleaning may cause damage to the LED.
(5) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this
product with acid or sulfur material in sealed space.
(6) Avoid leaving fingerprints on silicone resin parts.
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Precaution for Use
(1) Storage
To avoid the moisture penetration, we recommend storing Power LEDs in a dry box with a
desiccant.
(2) For manual soldering
Seoul Semiconductor recommends the soldering condition
(ZC series product is not adaptable to reflow process)
a. Use lead-free soldering
b. Soldering should be implemented using a soldering equipment at temperature lower than 350°C.
c. Before proceeding the next step, product temperature must be stabilized at room temperature.
(3) Components should not be mounted on warped (non coplanar) portion of PCB.
(4) Radioactive exposure is not considered for the products listed here in.
(5) It is dangerous to drink the liquid or inhale the gas generated by such products when chemically
disposed of.
(6) This device should not be used in any type of fluid such as water, oil, organic solvent and etc.
When washing is required, IPA (Isopropyl Alcohol) should be used.
(7) When the LEDs are in operation the maximum current should be decided after measuring the
package temperature.
(8) The appearance and specifications of the product may be modified for improvement without
notice.
(9) Long time exposure of sun light or occasional UV exposure will cause silicone discoloration.
(10) Attaching LEDs, do not use adhesive that outgas organic vapor.
(11) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the
reverse voltage is applied to LED, migration can be generated resulting in LED damage.
(12) Please do not touch any of the circuit board, components or terminals with bare hands or metal
while circuit is electrically active.
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Precaution for Use
(13) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures
can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic
energy. The result can be a significant loss of light output from the fixture. Knowledge of the
properties of the materials selected to be used in the construction of fixtures can help prevent
these issues.
(14) LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is
a list of suggestions that Seoul Semiconductor purposes to minimize these effects.
Ⅰ. ESD (Electro Static Discharge)
Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come
into contact. While most ESD events are considered harmless, it can be an expensive problem in
many industrial environments during production and storage. The damage from ESD to an LEDs may
cause the product to demonstrate unusual characteristics such as:
- Increase in reverse leakage current lowered turn-on voltage
- Abnormal emissions from the LED at low current
The following recommendations are suggested to help minimize the potential for an ESD event.
One or more recommended work area suggestions:
- Ionizing fan setup
- ESD table/shelf mat made of conductive materials
- ESD safe storage containers
One or more personnel suggestion options:
- Antistatic wrist-strap
- Antistatic material shoes
- Antistatic clothes
Environmental controls:
- Humidity control (ESD gets worse in a dry environment)
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Precaution for Use
Ⅱ. EOS (Electrical Over Stress)
Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is
subjected to a current or voltage that is beyond the maximum specification limits of the device.
The effects from an EOS event can be noticed through product performance like:
- Changes to the performance of the LED package
(If the damage is around the bond pad area and since the package is completely encapsulated
the package may turn on but flicker show severe performance degradation.)
- Changes to the light output of the luminaire from component failure
- Components on the board not operating at determined drive power
Failure of performance from entire fixture due to changes in circuit voltage and current across total
circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed
to electrical overstress as the failure modes have been investigated to vary, but there are some
common signs that will indicate an EOS event has occurred:
- Damaged may be noticed to the bond wires (appearing similar to a blown fuse)
- Damage to the bond pads located on the emission surface of the LED package
(shadowing can be noticed around the bond pads while viewing through a microscope)
- Anomalies noticed in the encapsulation and phosphor around the bond wires.
- This damage usually appears due to the thermal stress produced during the EOS event.
Ⅲ. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing:
- A surge protection circuit
- An appropriately rated over voltage protection device
- A current limiting device
Rev3.0, Dec 2, 2015
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Product Data Sheet
SDWx3F1C – Chip on Board
Company Information
Published by
Seoul Semiconductor © 2013 All Rights Reserved.
Company Information
Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of
light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage
and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than
10,000 patents globally, while offering a wide range of LED technology and production capacity in
areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs.
The company’s broad product portfolio includes a wide array of package and device choices such as
Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type
LEDs as well as custom modules, displays, and sensors.
Legal Disclaimer
Information in this document is provided in connection with Seoul Semiconductor products. With
respect to any examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party. The appearance and specifications of the product can be changed
to improve the quality and/or performance without notice.
Rev3.0, Dec 2, 2015
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