20140318081314 6441

WSAD92-02N Product Description
20A,200V Ultrafast Dual Diode
Features
�
Ultrafast recovery time
�
Low forward voltage drop
�
Low leakage current
�
High reliability by planer design
�
Maximum Junction Temperature Range(175℃)
C
A2
A1
General Description
Winsemi's WSAD92-02N is the state of the are Ultra fast Recovery
rectifiers designed with optimized performance of forward voltage drop
and ultra fast recovery time .The planar structure and the platinum
doped
life
time,control
guarantee
the
best
overall
performance,ruggedness and reliability characteristics.
Applications
�
Switching power Supplies
�
Uninterruptable Power Supplies
�
Power Switching circuits
�
General Purpose
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VRRM
Peak Repetitive Reverse voltage
200
V
IF(AV)
Average Out Current Square wave,duty=1/2,Tc=115℃
20
A
IFSM
Repetitive Peak Surge Current
100
A
-55-~175
℃
TSTG,TJ
Operating Junction Temperature & Storage Temperature
Electeical Characteristics (Tc=25℃ unless otherwise noted)
Value
Symbol
VF
IRRM
trr
Rth(J-C)
Parameter
Test Conditions
Units
Min
Typ
Max
IF=20A
-
-
1.15
V
IF=10A,Tc=125℃
-
-
0.8
V
VR=200V
-
5
15
µA
VR=200V,Tc=150℃
-
-
4
mA
IF=20A,dlF/dt=100µs
-
-
30
ns
-
-
1.5
℃/W
Forward Voltage Dorp
Reverse Current
Reverse Recovery Time
Thermal Resistance
WT-D005-Rev.A0 Mar.2014
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[email protected] Microelectronics Co., Ltd., All right reserved.
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0314
WSAD92-02N Product Description
20A,200V Ultrafast Dual Diode
Typical performance Curves
100
Reverse Current-I R(µA)
T J=175°C
10
10
150°C
125°C
1
100°C
0 .1
25°C
0 .0 1
0 .0 0 1
T J=175°C
0
50
100
150
200
250
Reverse Voltage-V R(V)
T J=125°C
Fig.2 Reverse Characteristics
T J=25°C
15
RMS Limit
Average Power Loss (Watts)
Instantaneous Forward Current-I F (A)
100
1
12
9
D = 0 .0 1
D = 0 .0 2
D = 0 .0 5
D = 0 .1
D = 0 .2
D = 0 .5
DC
6
3
0
0
0 .1
0
0 .4
0 .8
1 .2
1 .6
Forward Voltage Drop-V F M (V)
2
3
6
9
12
15
Average Forward Current-I F(AV ) (A)
Fig.3 Forward Power Dissipation
Fig.1 Forward Characteristics
101
[°C/W] 1 0 0
1 0 -1
1 0 -3
1 0 -2
1 0 -1
100
101
102
t[sec.]
Fig.4 Transient Thermal Impedance
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WSAD92-02N Product Description
20A,200V Ultrafast Dual Diode
300
170
D C
160
100
I FSM[A]
Allwable Case Temperature(°C)
180
150
Square wave (D=0.50)
Rated Vr appllied
50
30
140
see note(1)
10
130
0
3
6
9
12
1
15
3
5
10
30
time(at 50Hz)
Average Forward Current-I F (AV ) (A )
Fig.6 Surge Capability
Fig.5 Case Temperature vs Out Current
Junction Capacitance-C T (pF)
1000
T J =25°C
100
10
1
10
100
Reverse Voltage-V R(V)
1000
Fig.7 Junction Capacitance Characteristics
(1) Formula used:Tc=TJ-(Pd+PdREV)×Rthjc;
Pd=Forward Power Loss=IF(AV)×VFM@(IF(AV)/D) (see Fig.3)
PdREV=Inverse Power Loss=VR1×IR(1-D); [email protected]=rated VR
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WSAD92-02N Product Description
20A,200V Ultrafast Dual Diode
Reverse Recovery Circuit
V R=200V
0 .0 1 Ω
L=70µH
D .U .T
di F/dt
ADJUST
D
IRFP250
G
S
se Recovery Paramet
er Test Circuit
Fig.8 Rever
Revers
Paramete
3
trr
IF
tb
ta
0
Q rr
4
2
IR R M
0.5I R R M
di(rec)M/dt
5
0.75IR R M
1
diF /dt
1.di F/dt-Rate of change of current though zero
crossing
2.I R R M -Peak reverse recovery current
3.trr-Reverse recovery time measured from zero
crossing point of negative going I Fto point where
a line passing through 0.75 I RRM and 0.50 I RRM
extrapolated to zero current
4.Qrr-Area under curve defined by trr
and IR R M
Qrr=trr IX RRM
2
5.di(rec)M/dt-Peak rate of change of
current during tb portion of trr
se Recovery Waveform and Definitions
Fig.9 Rever
Revers
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WSAD92-02N Product Description
20A,200V Ultrafast Dual Diode
TO-3P N Package Dimension
U n it:m m
A
E
F
符 号
symbol
M IX
MAX
A
3 .8
4. 2
B
2. 10
2 . 30
B1
1. 90
2 . 10
b
1 .0 0
1 . 20
D
P
c
c
B
D
1 9 .3 0
1 9 .7
E
1 4 .9
1 5 .5
e
5 . 45 ( TYP )
F
1 . 50( T Y P )
L
1 4 .0
1 5 .0
P
3. 45
3 . 85
L
B1
0 . 50( T Y P )
b
e
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WSAD92-02N Product Description
20A,200V Ultrafast Dual Diode
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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M ICROELECTRON ICS
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M ICROELECTRON ICS
Tel : +86-755-8250 6288
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