Capabilities Brochure

V I S H AY I N T E R T E C H N O L O G Y, I N C .
esd protection and emi filter arrays
INTRODUCTION
With the increasing use of integrated circuits in mobile and wired communication devices
and consumer products, it is more important than ever to protect sensitive electronics from
high transient voltages or unintentional frequencies. High-voltage spikes with various waveforms and durations can damage or even destroy electronic circuits, and the interference of
unintentional frequencies can influence the system in a negative way.
These transient voltages have various sources. One of the most common types is electrostatic discharge (ESD). For example, a person can inadvertently discharge accumulated
static electricity on a phone merely by touching the device. A sudden power surge can also
occur when lightning strikes a power line, potentially harming devices connected to the line.
ESD protection diodes combined with an electromagnetic interference (EMI) filter network
serve as unobtrusive but strong “bodyguards” against these hazards. Protection devices
such as very fast Zener and Avalanche diodes draw a very low leakage current when placed
in front of sensitive electronic gates. But above the defined voltage working range, any transient voltage that approaches the breakdown voltage will be short-circuited by the diodes so
it cannot reach the gate.
Vishay offers a wide range of surface-mount, plastic packaged protection diodes, arrays,
and EMI filters designed especially for space-sensitive electronic products such as mobile
electronics.
One of the World’s Largest Manufacturers of
Discrete Semiconductors and Passive Components
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d
V I S H AY I N T E R T E C H N O L O G Y, I N C .
esd protection and emi filter arrays
How ESD Protection Diodes Work
Equivalent Circuitry of an ESD Protection Diode
80
I
70
ESD
40
Ideal Z-diode with
junction capacitance
Forward
Current
Reverse
Clamping Range
Reverse
Working Range
In this range the diode
behaves like a closed
switch characterized by:
In this range the diode
behaves like an open
switch characterized by:
–
–
–
–
–
–
–
–
Breakdown voltage (VBR)
Clamping voltage (VC)
Peak pulse current (IPP)
Maximum peak pulse
current (IPPM)
– Peak pulse power
Rs = Series resistance
VBR
50
Ls = Series inductance made by
bond wires & package leads
VBR + VRS
VBR + VRS + VLS
Voltage drop at a protection diode during 8kV ESD
60
Typical Current Voltage Diagram of an ESD
Protection Diode
VC
Capacitance (CD)
Leakage current (IR)
Applied reverse voltage (VR)
Maximum appliable reverse
working voltage (VRWM)
VBR VRWM
VR
30
IR
Reverse
Voltage
Inductive voltage component
Forward
Voltage
VF
Forward
Clamping Range
20
The diode behaves
like a closed switch
and clamps voltage
transients close to
ground level.
Resistive voltage component
10
V BR = Avalanche breakdown level
0
IF
0
10
20
30
40
50
60
70
80
– Forward voltage (VF)
– Forward current (IF)
90
IPP
Time axis (ns)
The clamping voltage of an ESD protection diode is
determined by three major components:
IPPM
Reverse Curren
nt
• Zener or avalanche breakdown voltage level:
VBR = defined by chip design
• Voltage drop at the series resistance of the diode:
VRs = IESD * RS
• Voltage drop at the bondwire and lead inductance:
VLs = L S * (dIESD /dt)
How EMI Filters Work
LWire
Out
In
Ground
One EMI filter channel is
made of a symmetrical π
device with two identical
Perspective)Z-diodes and a resistor Expand Appearance,
between the input and Rotate 2º
output pin.
R
In
ZD
ZD
Cd
Out
LGND
Out
Ground
Within the voltage working
range the Z-diodes can be
Out considered as a voltage
In
dependent capacitance.
Ground
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LWire
RLine
Cd
In
For higher frequencies in the
GHz range, wire inductances
and particularly the ground
inductance have an influence
on the filter performance.
R
Cd
Out
Cd
Ground
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esd protection and emi filter arrays
Bode Diagram
The most important characteristics for a filter is its signal attenuation over the frequency, the relation of the output to the
input signal. The result depends on the source and load impedances and is usually defined with 50 Ω.
In
Out
LWire
ZSource
VIN
LWire
RLine
Cd
Cd
VOUT
High Frequency
Current
LGND
ZLoad
Low Frequency
Current
Ground
VOUT
VIN
In the low-frequency
range,the whole signal
current is flowing across the
series resistance RLine and
the load impedance ZLoad .
Above the cut-off frequency
(f 3dB), the diode capacitance
Cd shorts the signal to
ground. The higher the
frequency, the lower the
“short-impedance” to
ground.
[log]
1
f3 dB
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It is the ground
inductance
LGND which
lets the “short
impedance” grow
again.
The increasing
impedance of the
line inductances
LWire blocks the
incoming EMI
signal.
frequency [log]
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V I S H AY I N T E R T E C H N O L O G Y, I N C .
esd protection and emi filter arrays
Basic ESD Protection Functions
An ESD protection device with a BiAs clamping characteristic clamps
transient voltage signals:
BiAs
BiAs
BiAs
BiAs Bidirectional
Asymmetrical
BiSy
BiAs
An ESD protection device with a BiSy clamping characteristic clamps
transient voltage signals:
BiSy
BiSy
Uni
BiSy
• at different voltage levels
• in a positive direction just above the Zener or avalanche breakdown
levels
• in negative direction just below the ground level
• like a single Z-Diode with forward and reverse modes
BiSy Bidirectional
Symmetrical
• in positive and negative directions
• at the same voltage levels in both directions
• like two equal Z-Diodes with a common cathode in series
Uni
Uni
An EMI filter device filters with:
BUS
Uni
BUS
BUS
EMI Filters
•
•
•
•
low-pass characteristic
low attenuation of low-frequency data signals
high attenuation of high frequencies
additional overvoltage protection
BUS
EMI
EMI
EMI
For further
information...
...please contact
...please visit
[email protected]
[email protected]
http://www.vishay.com/diodes/protection-tvs-esd/arrays/
http://www.vishay.com/diodes/protection-tvs-esd/emi-filter/
EMI
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NOTES
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esd protection and emi filter arrays
NOTES
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esd protection and emi filter arrays
NOTES
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V I S H AY I N T E R T E C H N O L O G Y, I N C .
esd protection and emi filter arrays
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