V I S H AY I N T E R T E C H N O L O G Y, I N C . DIODES SMA6F5.0A thru SMA6F20A Surface-Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Very low profile – 0.95 mm • SMA footprint compatible • Peak pulse power –– 600 W at 10/1000 µs –– 4 kW (8/20 µs) • Excellent clamping capability (3 % to 9 % compared to current SMB TVS) • ESD capability –– 15 kV (air) –– 8 kV (contact) • TJ max: 175 °C • Halogen-free according to IEC 61249-2-21 definition • Environmentally friendly “green” specifications, lead (Pb)-free devices KEY APPLICATIONS • Hard disk input power line protection circuit • Hot swap PWM IC input power line protection circuit • Power supply DC output protection circuit RESOURCES • Datasheet: SMA6F5.0A thru SMA6F20A – http://www.vishay.com/ppg?89458 • For technical questions, contact [email protected] • Material categorization: For definitions of compliance, please see http://www.vishay.com/doc?99912 One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components PRODUCT SHEET 1/2 VMN-PT0322-1411 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 FEATURES SlimSMA DO-221AC V I S H AY I N T E R T E C H N O L O G Y, I N C . • Very low profile - typical height of 0.95 mm TM New Product • Ideal for automated placement New Product • Uni-directional only DIODES - 15 k - 8 kV • Meets 260 °C SMA6F5.0A thru SMA6F20A • Comp accor SMA6F5.0A thru SMA6F20A www.vishay.com www.vishay.com • Halog • Peak power: Vishay Semiconductor Vishay General Semiconductor (10 x 1000 µs) General 600 W Ppulse 600 W (10/1000 µs) P (8 x 20 µs) ® 4000 W New Product ® Transient -RANS 4 kW (8/20 µs) Surface-Mount T Z ORB MECH ® Surface Mount T RANS Z ORB Voltage Suppressors Bottom View at T = 5 5 ° C 6W P Top View Surface Mount TRANSZORB Transient Voltage Suppressors thru SMA6F20A •SMA6F5.0A ESD capability: IEC 61000-4-2 level 4 Case: D 175 °C T max. FEATURES DO-221AC TransientNew Voltage Suppressors 15 kV (air) Product Molding www.vishay.com FEATURES PRIMARY CHARACTERISTICS thru SMA6F20A •SMA6F5.0A Excellent clamping capability V 5.0 V to 20 V WM PPM PPM D M J General • Very low profile - typical height ofSemiconductor 0.95 mm - 8Vishay kV (contact) • Very low profile - typical height of 0.95 mm • Ideal for automated placement SlimSMATM SlimSMA TM ELECTRICAL CHARACTERISTICS www.vishay.com • SYMBOL • PARAMETER PRIMARY CHARACTERISTICS Stand-off voltage VWM • ELECTRICAL CHARACTERISTICS VWM 5.0 V to 20 V Breakdown voltage PARAMETER Bottom View 600 W Clamping voltage Stand-off voltage 4000 W DO-221AC Leakage current at VWM Bottom View Breakdown voltage 6 W Peak pulse current Clamping voltage 175 °C DO-221AC T Voltage temperature coefficient Leakage current at VWM ID Forward voltage drop VF IPRIMARY Peak pulse current CHARACTERISTICS PP Dynamic resistance R D TYPICAL APPLICATIONS VWM 5.0 V to 20 V T Voltage temperature coefficient VBR Top View PSYMBOL VPPM (10 x 1000 µs) C VWM P (8 x 20 µs) ID PPM Top View VP BRD at TM = 55 °C IPP VC TJ max. • SMA6F5.0A SMA6F20A •TYPICAL Meets MSLAPPLICATIONS level 1,thru per J-STD-020, LF maximum peak of placement •260 Ideal for automated Uni-directional only °C sensitive Use Vishay in electronics protection against voltage General Semiconductor IF Excellent clamping capability •Compliant Uni-directional only induced by inductive load 2002/95/EC switching andand lighting •transients to RoHS Directive in Peak pulse power: •accordance Excellent clamping capability on ICs, MOSFET, signal lines of sensor units for consumer, to WEEE 2002/96/EC - 600 W (10/1000 µs) VWM industrial, and telecommunication. •Halogen-free Peak pulse power: - 4 kW (8/20 •computer, according to IEC 61249-2-21 definition IF VBR µs) -C600 W (10/1000 µs) V ESD capability: IEC 61000-4-2 level 4 V - 15 kV (air) - 4 kW (8/20 µs) VF MECHANICAL DATA VWM D MAXIMUM RATINGS - 8 kV (contact) I Base P commer Termina J-STD-0 M3 suffi Polarity (T = 25 °C, unless otherwise noted) A • ESD VBR capability: IEC IT 61000-4-2 level 4 Case: DO-221AC (SlimSMA) • Meets level 1, per J-STD-020, LF maximum peak of V PMSL A R A M E T E R -C15 kV (air) compound meets UL 94 V-0 Vflammability rating 260Molding °C VF - 8 kV (contact) ID with a 10/1000 µs waveform Base P/N-M3 - dissipation halogen-free, RoHS and • Compliant to RoHS 2002/95/EC and compliant, in Peak pulse powerDirective IT per J-STD-020, LF maximum peak of • Meets MSL levelIPP1, accordance to WEEE 2002/96/EC commercial grade with a 8/20 µs waveform 260 °C • Halogen-free according to IEC 61249-2-21 definitionsolderable Zener Voltage Regulator Terminals: Matte tin plated leads, per with a 10/1000 µs waveform Use inV sensitive electronics protection voltage µs) 600against W PPPM (10 x 1000 Forward voltage drop F pulseand current •Peak Compliant to RoHS Directive 2002/95/EC and in J-STD-002 JESD22-B102 transients induced byµs) inductive load switching PPPM (8 x 20 4000 W and lighting PRIMARY CHARACTERISTICS with a 8/20 µs waveform IPP Dynamic resistance R WEEE DATAto M3 accordance suffix meets JESD 2012002/96/EC class 1A whisker test on ICs, DMOSFET, 6 W for consumer, MECHANICAL PD at TM signal VWM= 55 °C lines of sensor units 5.0 V to 20 V T M = 55 °C Zener Voltage Regulator to IEC 61249-2-21 ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) Case: DO-221AC (SlimSMA) 175 °CA TJ max. and telecommunication. •Power Halogen-free according definition computer, industrial, Polarity: Color band denotes cathode end dissipation SY P I PPPM (10 x 1000 µs) 600 W Molding compound V-0 flammability rating T = 25 °C MAXIMUM VC AT IPP meets RD (2) ULV94 RD (2) C AT IPP A BREAKDOWN REVERSEBase P/N-M3 - halogen-free, RoHS compliant, (3) and 4000 W T VOLTAGE LEAKAGEcommercial 10/1000 μs 8/20 μs MARKING (1) S t o r a g e t e m p e r a t u r e r a n g e grade MECHANICAL DATA TYPICAL APPLICATIONS VBR AT IT(T6 W TYPE (3) = 55 CHARACTERISTICS °C CODE(T = 25 PD at TMRATINGS ELECTRICAL °CIDunless noted) AT VWMotherwise A = 25otherwise MAXIMUM °C, against unless noted) Terminals: plated Use in sensitive electronicsA protection voltage Case: (SlimSMA) OVp rMatte atIDO-221AC iPP ng juR ntin ct(2) ion te peleads, rIa ture RraDsolderable n(2)ge MAX. per AT Vm MIN. MAX. 25 °CMAXIMUM 85 °C MAX. MAX. Ce D C AT PP 1 7 5 ° C TJ max. BREAKDOWN and inductive load switching and lighting PARtransients AMETERinduced by DEVICE SYJESD22-B102 Mcompound BOL VUL ALU E UNrating IT REVERSEJ-STD-002 -4 (3) Molding meets 94 flammability V mA μA V V A V A V-0 /°C T VOLTAGE meets JESD whisker test 10 LEAKAGEM3 suffix onDEVICE ICs, MOSFET, signal lines of sensor units for Notes 10/1000 μs 201 class 1A 8/20 μs MARKING (1) consumer, AT I V TYPE Base 68.0 P/N-M3 halogen-free, compliant, and (3)5.0 µs waveform SMA6F5.0A 6AE 6.40 BR 7.07 T with 10 a 10/1000 150ID AT375 0.031 -13.4 298 600 0.021 RoHS 5.7 VWM CODE (1) 9.2 computer, industrial, and telecommunication. (1)denotes Polarity: Color band cathode Non-repetitive current pulse,end per fig. 3 and derated above Peak pulse power dissipation P63.2 W T A = 25 °C per fig. 2. PPM 0.033 commercial gradeMAX. SMA6F6.0A 6AG 6.70 MAX. 7.41 10 600 1500 6.0 (2)MAX. 9.5 13.7 290 0.022 5.9 MIN. 25 °C 85 °C MAX. TYPICAL APPLICATIONS PPPM (8 x 20 µs) DEVICE DEVICE with a 8/20 µs waveform 40infinite 00 Power dissipation mounted on heatsink -4/°C 6AK 7.20 V 7.96 10 100 μA 250 6.5 10.2 58.8 0.038 14.5 0.024 mA V (3)Terminals: V Matte V tin276 A plated 106.1 leads, solderable per Use SMA6F6.5A in sensitive electronics protection with against voltage PowerAdissipation mounted on minimum recommended pad layout a 10/1000 µs waveform MAXIMUM RATINGS (T = 25 °C, unless noted) SMA6F7.5A 6AP 8.33 9.21 1 otherwise 50 125 7.5 11.8 50.8 0.051 17.0 235 0.033 6.5 SMA6F5.0A 6AE 6.40 7.07 10 150 375 5.0 9.2 68.0 0.031 13.4 298 0.021 5.7 A (1) J-STD-002 Peak pulse current IPPM and JESD22-B102 See next table A transients induced by inductive load switching and lighting SMA6F8.0A 6AR 8.89 9.83 1 a 8/20 20 µs 1500 50 8.0 12.8 0.063 18.2 220 0.038 waveform SMA6F6.0A 7.41 with 600 6.0 SY 9.5 63.2 meets 0.033 JESD 13.7 290 class 0.022 1A Uwhisker 5.9 PARMOSFET, AMETER signal6AG MBO L46.9 V ALUE201 N7.0 IT M3 suffix test on ICs, lines of6.70 sensor units10for consumer, SMA6F8.5A 6AT 9.4 10.4 1 20 50 8.5 13.3 58.8 45.1(2) 0.038 0.064 14.5 18.7 205 0.024 0.040 7.3 SMA6F6.5A 6AK 7.20 7.96 10 100 250 6.5 10.2 276 with 600denotes6cathode6.1 = 55 °Cµs waveform P TMa 10/1000 computer, industrial, and telecommunication. D Polarity: Color band end (1) Peak pulse power dissipation W SMA6F10A 6AX 11.1 12.3 1 1.0 5.0 10 P15.7 38.2 0.089 19.6 184 0.040 7.8 PPM 9.21 1 50 125 7.5 11.8 50.8 0.051 17.0 235 0.033 6.5 W with a 8/20 µ°sCwaveform 4000 PD (3) 0.063 13.5 TA1= 25 1.0 5.0 11 17.2 46.9 34.8 0.107 18.2 21.5 172 1.0 0.047 8.1 9.83 20 50 8.0 12.8 220 0.038 7.0 with a 10/1000 µs waveform 14.7 1 0.2 1.0 12 18.8 157 0.056 10.4 20 50 8.5 13.3(1) 31.9 45.1 0.064See23.5 18.7 205 0.040 7.3 - 65 to + 175 A8.3 TSTG 0.128 IPPM next table MAXIMUM RATINGS (TA13.2 = 2514.3 °C, unless 0.2 otherwise noted) °C SMA6F12AHD 6BF 1.0 12 18.5 157 8.4 SMA6F10A 6AX 11.1 12.3 with a1 8/20 µs 1.0waveform 5.0 10 15.7 32.4 38.2 0.130 0.089 22.9 19.6 184 0.055 0.040 7.8 Op aSMA6F13A tA inM g EjuTnEcR tion tempera6BG ture rang e - 55 to 175 J B0.153 PD (2) 34.8 6 PeArR SYTM OL 21.5 A+LU E 8.1 UNIT 14.4 15.9 TM =155 °C 1.0 0.2 1.0 13 20.4 29.4 23.9 147 V 0.064 8.4 SMA6F11A 6AZ 12.2 13.5 5.0 11 17.2 0.107 172 0.047 W Power dissipation 6BM 16.7 18.5 125 °C 0.2 1.0 15 23.6 8.8 SMA6F12A 6BE 13.3 14.7 TA =with 12 18.8 31.9 0.201 0.128 27.7 23.5 157 0.075 0.056 8.3 PD (3) 25.4 1.0 123 Notes SMA6F15A a 10/1000 µs waveform 600 (1) SMA6F16A 6BP per fig. 17.8 19.7 16perRevision: 25.22. 32.4 23.8 0.229 29.5 119 0.055 0.082 8.8 (1) Non-repetitive Peak pulse dissipation P23-Nov-11 W SMA6F12AHD 13.2 14.3 1 above 0.2 T A 1.0 18.5 157 8.4 1 PPM0.130 3 and derated = 25 °C12 fig. - 6522.9 to + 175 Sto rage tepower mcurrent peratu re rpulse, ang6BF e TSTG w i t h a 8 / 2 0 µ s w a v e f o r m 4000 (2) Power SMA6F17A 6BR 18.9 20.9 1 0.2 1.0 17 26.7 22.5 0.259 31.4 111 within 0.095 9.0 SMA6F13A 6BG 14.4 heatsink 15.9 13 20.4 For 29.4technical 0.153 23.9 147 0.064 8.4 questions your °C region: [email protected], Di dissipation mounted on infinite Operating junction temperature range TJ - 55 to + 175 (3) Power SMA6F18A 6BT 20.0 22.1 1 a New 0.2pad Product 1.0µs waveform 18 28.3 21.2 0.292 102 9.2 SMA6F15A 6BM 16.7 18.5 15 23.6 THIS 25.4DOCUMENT 0.201 33.2 27.7 IS SUBJECT 123 0.109 0.075 TO CHANGE 8.8 with 10/1000 dissipation mounted on minimum recommended layout WITHOUT NOTICE. THE PROD (1) Peak pulse current I next table A Notes PPM SUBJECT TO8.8 SPECIFIC DISCLAIMERS, SET FORTH SMA6F20A 6BV 22.2 24.5 1 0.2 1.0 20 31.4 19.1 0.361 36.8 ARE 93See 0.132 9.4 SMA6F16A 6BP 17.8 19.7 16 25.2 23.8 0.229 29.5 119 0.082 a 8/20 µs°C waveform (1) Non-repetitive current pulse, per fig. 3 and deratedwith above T A = 25 per fig. 2. SMA6F17A 6BR 18.9 20.9 1 0.2 1.0 17 26.7 22.5 0.259 31.4 111 0.095 9.0 Notes (2) Power dissipation mounted on infinite heatsink (1) Pulse test: t 50 ms 50.2 5 °C 1.0 PD (2) 6 T p 6BT on minimum 20.0 recommended 22.1 1 M =pad 18 28.3 21.2 0.292 33.2 102 0.109 9.2 (3)SMA6F18A Power dissipation mounted layout www.vishay.com W Power (2) To dissipation calculate maximum clamping voltage at other surge currents, use following formula: V = RD x36.8 IPP + VBR max.0.132 CL max. (3) SMA6F20A 6BV 22.2 24.5 1 0.2 1.0 20 31.4 19.1 0.361 93 9.4 T A = 25 ° C PD 1.0 (3) To calculate V vs. junction temperature, use following formula: V at T = V at 25 °C x (1 + T x (T 25)) BR BR J BR J Notes - 65 to + 175 St(1)orage temperature range TSTG Pulse test: tp TO 50 ms IMMUNITY STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS °C (2) To calculate maximum clamping voltage at other surge currents, use following formula: V max. = R x I + V max. CHARACTERISTICS (TA = 25 °C unless otherwise noted) CL TJ D PP BR - 55 to + 175 OpeTHERMAL raAtin jun°C ctiounless n tempotherwise erature rannoted) ge =g25 (T (3) To calculate VBR vs. junction temperature, use following formula: VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25)) PARAMETER VALUE CLASS UNIT TEST TYPE TEST SYMBOL CONDITIONS SYMBOL VALUE NotesSTANDARD (1) Typical thermalcurrent resistance, junction to ambient RJA 150 °C/W (1) Non-repetitive > 8 kV Human body model (contact mode) pulse, per fig. 3 and derated above T = 25 °C per fig. 2. Revision: 23-Nov-11 Document Number: 89458 A 1 THERMAL 4 IEC 61000-4-2 CHARACTERISTICS (TA = 25 °C unless otherwise C = 150noted) pF, R(2)= 330 VC (2) Power dissipation mounted on infinite heatsink 20 °C/W Typical thermal resistance, junction to mount R JM Human body model (air discharge mode) > 15 kV For technical questions within your region: [email protected], [email protected], [email protected] PARAMETER SYMBOL VALUE Document Number: UNIT89458 (3) Power Revision: 23-Nov-11 mounted on minimum recommended pad 1layout dissipation Notes THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT For technical questions within to your region: [email protected], [email protected], [email protected] thermal resistance, junction ambient RJA (1) AT www.vishay.com/doc?91000 150 °C/W (1) Typical ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Mounted on minimum recommended pad layout THIS DOCUMENT IS SUBJECT TO(Example) CHANGE WITHOUT NOTICE. THE PRODUCTS(2)DESCRIBED HEREIN AND THIS DOCUMENT (2) ORDERING Mounted on infinite heatsink INFORMATION 20 °C/W Typical thermal resistance, to mount AREjunction SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH R ATJM www.vishay.com/doc?91000 PowerSMA6F7.5A dissipation 6AP SMA6F11A 6AZ SMA6F8.0A 6AR SMA6F8.5A 6AT StoraSMA6F12A g e tepulse mpercurrent ature range6BE Peak 8.33 12.2 8.89 13.3 9.4 SMA6F5.0A thru SMA6F20A Revision 23-Nov-11 Vishay General Semiconductor PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE Notes (1) Mounted on minimum recommended pad layout SMA6F5.0A-M3/6A 0.032 6A 3500 7" diameter plastic tape and reel Revision: 23-Nov-11 Document Number: 89458 (2) 2 Mounted on infinite heatsink SMA6F5.0A-M3/6B 0.032your region: [email protected], 6B 14 000 13" diameter plastic tape and reel For technical questions within [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CHARACTERISTICS CURVES Document Number: 89458 2 RATINGS AND Revision: 23-Nov-11 For°C technical your region: [email protected], [email protected], [email protected] (TA = 25 unless questions otherwisewithin noted) Revision:THIS 23-Nov-11 Document Number: 89458 1 DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE2/2 PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT PRODUCT SHEET VMN-PT0322-1411 10 urrent (% IRSM) Power (kW) ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH150 AT www.vishay.com/doc?91000 For100 technical questions within your region: [email protected], [email protected], [email protected] TJ = 25 °C tr = 10 μs Pulse Width (td) isAND THIS DOCUMENT THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS tr = 8 μs DESCRIBED HEREIN defined as the Point THIS DOCUMENT IS SUBJECT TOARE CHANGE WITHOUT NOTICE. THE PRODUCTSSET DESCRIBED HEREIN THISthe DOCUMENT ARE SUBJECT TO SPECIFIC SUBJECT TO SPECIFIC DISCLAIMERS, FORTH AT www.vishay.com/doc?91000 Peak Value AND Where Peak Current IPPM decays to 50 % of IPPM DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 100