V I S H AY I N T E R T E C H N O L O G Y, I N C . TVS Diodes Vishay General Semiconductor TVS = Transient Voltage Suppressor P P P P P P P P P P P P P P P P P P P P P P P P|P P|P P P|P P P P P P SM5S10AT to SM5S43AT | SM5A27T SM6S10AT to SM6S43AT | SM6A27T 5KP8.5A to 5KP188A 5KASMC10A to 5KASMC43A SMC5K10A to SMC5K20A SM8S10AT to SM8S43AT | SM8A27T P Click to view datasheet Surge power at tp = 10/1000 µs 1/2 SELECTOR GUIDE THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 +185 ºC +175 ºC +150 ºC Temperature Range Package Name -65 ºC -55 ºC Uni- / BiDirectional 700 V 400 V 500 V 300 V 200 V 100 V 70 V 40 V 50 V 30 V 20 V 10 V 7V 4V 5V 3V AEC-Q101 yes yes yes yes yes yes yes yes 4000 W 5000 W 6000 W 7000 W P 3000 W P P P P P P P P P 2000 W P P P P P P P yes yes yes yes yes yes / no yes / no yes no yes yes yes yes yes no no yes yes no yes yes yes / no yes yes / no yes yes yes yes no no yes yes 1000 W P P P P P P P P 700 W P P P P P P P P P P P yes yes / no yes / no yes no yes yes yes yes 400 W 500 W P P P no yes yes yes yes yes MSP3V3, MSP5.0A MSMP6.0A to MSMP20A BZD27C7V5P to BZD27C200P SMF5V0A to SMF58A TPSMP6.8 to TPSMP6.8A P4KE530, P4KE550 P4SMA100A to P4SMA540A P4SMA100CA to P4SMA220CA SMAJ85A to SMAJ188A SMAJ85CA to SMAJ188CA SMAJ530, SMAJ550 TPSMP7.5A to TPSMP12A BZG04-8V2 to BZG04-220 P4KE6.8A to P4KE540A P4KE6.8CA to P4KE440CA VTVS5V0ASMF to VTVS63GSMF SMP3V3, SMP5.0A to SMP36A P4SMA6.8A to P4SMA91A P4SMA6.8CA to P4SMA91CA SMAJ5.0A to SMAJ78A SMAJ5.0CA to SMAJ78CA TPSMP13A to TPSMP43A TPSMA6.8A to TPSMA43A SA5.0A to SA170A SA5.0CA to SA170CA SMA5J5.0A to SMA5J40A SMA5J5.0CA to SMA5J40CA P6KE6.8A to P6KE540A P6KE6.8CA to P6KE540CA SMA6J5.0A to SMA6J28A SMA6F5.0A to SMA6F20A P6SMB6.8A to P6SMB540A P6SMB6.8CA to P6SMB220CA SMBJ3V3 SMBJ5.0A to SMBJ188A SMBJ5.0CA to SMBJ188CA SMBJ5.0D to SMBJ188D SMBJ5.0CD to SMBJ120CD TPSMB6.8A to TPSMB43 TA6F6.8A to TA6F51A LVB14A SMB8J5.0CA to SMB8J40CA SMB10J5.0A to SMB10J40A 1.5KE6.8A to 1.5KE540A 1N6267A to 1N6303A 1.5KE6.8CA to 1.5KE440CA 1.5SMC6.8A to 1.5SMC540A 1.5SMC6.8CA to 1.5SMC220CA SMCJ5.0A to SMCJ188A SMCJ5.0CA to SMCJ188CA SMPC5.0A to SMPC36A SMPC22AN to SMPC85AN TPC11CA to TPC36CA TPSMC6.8A to TPSMC47A TPC6.8A to TPC51A SMC3K22CA to SMC3K78CA 3KASMC10A to 3KASMC43A 300 W P P P P P P no 200 W P P P P P P P P P P P Gray slashes: Not AEC-Q101 qualified Surge power at tp = 10/1000 µs (blue and gray bars) Axis located at bottom of table Stand-Off and Clamping Voltage Device Name 100 W P P * Standard Epoxy Type www.vishay.com/diodes/protection-tvs-esd/ Black slashes: AEC-Q101 qualified Technology Result example: Max. clamping voltage VC at tp = 10/1000 µs Stand-off or reverse working voltage VRWM of VWM TransZorb® MicroSMP MicroSMP TransZorb TransZorb DO-219AB (SMF) TransZorb DO-219AB (SMF) PAR® DO-220AA (SMP) DO-204AL (DO-41) TransZorb DO-214AC (SMA) TransZorb DO-214AC (SMA) TransZorb DO-214AC (SMA) TransZorb DO-214AC (SMA) TransZorb DO-214AC (SMA) TransZorb PAR DO-220AA (SMP) DO-214AC (SMA) TransZorb DO-204AL (DO-41) TransZorb DO-204AL (DO-41) TransZorb DO-219AB (SMF) TransZorb DO-220AA (SMP) TransZorb DO-214AC (SMA) TransZorb DO-214AC (SMA) TransZorb DO-214AC (SMA) TransZorb DO-214AC (SMA) TransZorb PAR DO-220AA (SMP) DO-214AC (SMA) PAR DO-204AC (DO-15) TransZorb DO-204AC (DO-15) TransZorb DO-214AC (SMA) TransZorb DO-214AC (SMA) TransZorb DO-204AC (DO-15) TransZorb DO-204AC (DO-15) TransZorb DO-214AC (SMA) TransZorb DO-221AC (SlimSMA) TransZorb DO-214AA (SMB) TransZorb DO-214AA (SMB) TransZorb DO-214AA (SMB) TransZorb DO-214AA (SMB) TransZorb DO-214AA (SMB) TransZorb DO-214AA (SMB) TransZorb DO-214AA (SMB) TransZorb DO-214AA (SMB) PAR DO-221AC (SlimSMA) PAR DO-214AA (SMB) TransZorb DO-214AA (SMB) TransZorb DO-214AA (SMB) TransZorb 1.5KE TransZorb 1.5KE TransZorb 1.5KE TransZorb DO-214AB (SMC) TransZorb DO-214AB (SMC) TransZorb DO-214AB (SMC) TransZorb DO-214AB (SMC) TransZorb TO-277A (SMPC) TransZorb TO-277A (SMPC) TransZorb TO-277A (SMPC) PAR DO-214AB (SMC) PAR PAR TO-277A (SMPC) DO-214AB (SMC) TransZorb DO-214AB (SMC) PAR PAR DO-218AC PAR DO-218AC P600 TransZorb DO-214AB (SMC) PAR DO-214AB (SMC) TransZorb PAR DO-218AC * For definitions of compliance, please see www.vishay.com/doc?99912 For technical questions, contact: [email protected] VMN-SG2192-1604 www.vishay.com/doc?49477 V I S H AY I N T E R T E C H N O L O G Y, I N C . TVS Diodes Vishay General Semiconductor Package Dimensions and Footprint (in millimeters) DO-214AB (SMC-J) TO-277A (SMPC) DO-214AA (SMB-J) 7.9 DO-221AC (SlimSMA™) DO-220AA (SMP) DO-219AB (SMF) MicroSMP 1.1 2.3 5.9 DO-214AC (SMA) 6.5 4.6 4.7 wire length min. 25.4 on both sides 6.7 wire length min. 25.4 on both sides 8.4 wire length min. 25.4 on both sides 8.9 0.8 DO-204AC (DO-15) 1.5KE Devices with this logo fulfill the automotive requirements such as: • Manufactured in an ISO/TS 16949 certified facility 1.1 5 Terminations are lead (Pb)-free wire length min. 25.4 on both sides 3.1 Compliant to RoHS Directive 2011/65/EU 2.4 DO-218AC 0.8 DO-204AL (DO-41) P600 Automotive grade 8Ds Change control / safe launch policy Maverick product policy Error-proofing * The diodes are electrically tested and qualified according the stress test conditions described in the Automotive Electronics Council (AEC) qualification plan (Q101). TVS Diodes and Temperature TVS diodes are avalanche breakdown diodes made of silicon. The avalanche breakdown voltage depends on the design of the diode (doping profile) and the temperature of the p-n junction. But it is independent from the size of the diode. Any current passing through the diode causes thermal power to heat the diode up. The avalanche breakdown voltage rises with a temperature coefficient of about ~ 0.1 %/K. At higher currents the low series resistance causes an additional voltage drop and contribution to the so-called “clamping voltage” of the diode. This is the major reason for increasing the clamping voltage during a surge pulse. Uni-Directional or 1.3 • • • • 8.9 • AEC-Q101 qualified* Bi-Directional A simple diode consists of a “p-doped” and an “n-doped” silicon layer. The junction between both is called the “p-n junction”. Such a diode passes a “forward current” from the p-layer, or the “anode”, to the n-layer, or the “cathode,” with a low “forward voltage” drop. In the opposite direction, the “reverse direction”, the p-n junction is blocked, so that only a very low “leakage current” can flow from the cathode to the anode. At the moment when the applied “reverse voltage” generates a critical electric field in the p-n junction, an “avalanche breakdown” starts. Diodes with just one p-n junction are “uni-directional avalanche breakdown diodes” and are called “uni-directional diodes.” Diodes with three layers, such as p/n/p or n/p/n, have two p-n junctions so that an avalanche breakdown can occur in both directions. These are called “bi-directional diodes.” Technology Short? or Open? PAR® stands for Passivated Anisotropic Rectifier technology. Diodes made with this technology offer high reliability with a maximum junction temperature (Tj) up to 185 °C. PAR devices are the first choice for automotive applications. During operation, when a high current passes the p-n junction, the diode gets hot. If the diode gets too hot the silicon in the p-n junction can melt (electrical overstress (EOS)) and the resistivity drops down. The diode gets usually “shorted.” But if the energy is just high enough, the diode can also be cracked or exploded. This can cause an open circuit. TransZorb® is a product series recommend for general applications. 2/2 SELECTOR GUIDE THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VMN-SG2192-1604 www.vishay.com/doc?49477