Data Sheet Schottky Barrier Diode RB168M150 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 3.5±0.2 ① 2.6±0.1 3.05 Features 1)Small power mold type. (PMDU) 2)High reliability PMDU Construction Silicon epitaxial planer Structure 0.9±0.1 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping dimensions (Unit : mm) 1.81±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1) Business frequence, R-road, Tc=110°C max. Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. IR Limits 150 150 1 30 150 - 55 to +150 φ1.0±0.1 3.71±0.1 1.5MAX Unit V V A A °C °C Min. Typ. Max. Unit - 0.76 0.84 V - 0.11 20 μA 1/4 8.0±0.2 φ1.55±0.05 4.0±0.1 0.25±0.05 1.75±0.1 2.0±0.05 3.5±0.05 4.0±0.1 Conditions IF=1A VR=150V 2011.09 - Rev.A 1 1000 Ta=150°C Ta=125°C Ta=75°C 0.1 Ta=25°C 10 Ta=75°C 1 Ta=25°C 0.1 0.01 Ta=−25°C 0.001 Ta=−25°C 0.01 Ta=125°C Ta=150°C 100 REVERSE CURRENT:IR(µA) FORWARD CURRENT:IF(A) Data Sheet RB168M150 0.0001 200 400 600 800 1000 0 50 100 1000 800 FORWARD VOLTAGE:VF(mV) f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 100 Ta=25°C IF=1A n=30pcs 790 780 770 AVE:756.9mV 760 750 10 0 5 10 15 20 25 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 120 Ta=25°C VR=150V n=30pcs 150 AVE:106.8nA 100 Ta=25°C f=1MHz VR=0V n=10pcs 115 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 200 110 105 100 AVE:95.0pF 95 90 50 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.09 - Rev.A Data Sheet RB168M150 30 200 PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) IFSM 175 8.3ms 8.3ms 1cyc 150 125 100 AVE:78.0A 75 50 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 AVE:7.8ns 10 5 0 IFSM DISPERSION MAP trr DISPERSION MAP 1000 1000 IFSM 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 8.3ms 1cyc 100 t 100 10 10 1 10 1 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1.5 1000 Rth(j-a) 100 Rth(j-c) 10 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Mounted on epoxy board 1 Sin(θ＝180) DC 0.5 1 D=1/2 0.1 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1000 0 3/4 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 2011.09 - Rev.A Data Sheet RB168M150 VR t T DC D=t/T VR=75V Tj=150°C DC 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io 0A 0V 2 2 1 D=1/2 Sin(θ＝180) 0.5 1.5 D=1/2 1 Sin(θ＝180) 0.5 0 0 0 50 100 0 150 50 100 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) ELECTROSTATIC DISCHARGE TEST ESD(KV) 5 4 3 2 1 0 AVE:1.18kV AVE:0.62kV C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A