diode-capacitor.pdf

Diodes &
Capacitors
www.apitech.com
Contents
API Technologies specializes in offering fully customized wafer manufacture of Pin, Lim, Step recovery &
tuning Varactor microwave diodes that are the most robust and reliable on the market. Our engineering
staff has many years of practical experience & design expertise coupled with our skilled production staff
provides OEM companies with high quality, consistent, on time microwave semi conductor products.
From R/D, through the design process, prototyping, pre-production and production, we will work with you
to guarantee the product we produce meets or exceeds your performance requirements. If you are
unsatisfied with your current product or find yourself needing a customized microwave semiconductor
and/or higher level assembly, contact us today.
Frequency Multiplier Diodes
Silicon Step Recovery Diodes
Selecting Silicon Multiplier Varactors
2
3
Tuning Varactor Diodes
Silicon Tuning Varactors
8
PIN Diodes
Fast Switching PIN Diodes
High Power PIN Diodes
Broadband PIN Diodes
Passivated PIN Diodes
Plated Heatsink PIN Diodes
Limiter PIN Diodes
16
17
18
20
21
22
MNS Chip Capacitors
23
Case Style Index
26
Equivalent Parts List
24
Frequency Multiplier Diodes
Silicon Step Recovery Diodes
A snap varactor is a silicon epitaxial device designed to store charge when conducting in the forward
direction. Conduction continues for a short time under reverse bias until the stored charge is swept out
by the reverse drive. At this point conduction ceases very abruptly. Lifetime is a measure of the time the
diode will maintain the stored charge and the snap time (transition time) is the speed at which reverse
conduction ceases.
These diodes find application in high efficiency multiplier and up/down converter applications and for
comb generators.
Specifications @ +25°C
Breakdown
Voltage
Capacitance
Thermal
Resistance
Cj-6 (pF)
(°C/W)
Minority Carrier
Lifetime (ns)
Snap Time
(ps)
Type
Number
Min
Min
Max
Max.
Min.
Typ.
Max.
Typ.
Standard
Case
Style
ML4402
15
0.20
0.45
60
7
15
50
40
30
ML4404
15
0.20
0.45
60
10
20
100
70
30
ML4405
20
0.40
0.80
45
10
20
120
90
30
ML4406
30
0.70
1.2
35
15
30
150
100
30
ML4407
45
1.0
2.5
30
35
80
200
150
30
ML4408
ML4409
60
75
2.0
3.5
4.0
8.0
25
12
50
100
150
400
500
1500
350
600
30
30
(V)
Notes
1.
Breakdown Voltage measured at IR = 10 µA
2.
Junction Capacitance measured at f = 1 MHz
3.
Minority carrier lifetime measured at IF = 10 mA
4.
Thermal resistance measurement is based on an infinite heat sink.
5.
Alternative case styles available on request.
6.
Storage / Operating Temperature
7.
Power Dissipation =
-65°C to +150°C
150°C – Tambient
Thermal Resistance
Selecting Silicon Multiplier Varactors
Selection Criteria
The use of Snap Varactor diodes results in:
•
High Efficiency
•
Both Low and High Order Multipliers
•
Comb Generation
The Snap varactor is an epitaxial diffused device designed to store charge when conducting in the
forward direction. Conduction continues for a short time under reverse bias until the stored charge is
swept out by the reserve drive. At this point conduction ceases very abruptly. The diodes minority
carrier lifetime is a measure of the time the diode will maintain the stored charge and snap time is the
speed at which reverse conduction ceases.
When selecting a multiplier diode, the following circuit parameters must be considered.
•
•
•
•
•
Input Frequency
Output Frequency
Output Bandwidth
Output Power
Circuit Type (coaxial, stripline, waveguide etc).
The choice of varactor type depends on the results required.
One thing that must be kept in mind is that efficiency; power output and bandwidth are all relative terms
and are as much a function of good multiplier design practice as diode selection.
Important Electrical Parameters
Breakdown Voltage (VB)
The minimum required breakdown voltage of the varactor can be obtained by:
VB
=
K=
=
=
=
=
=
Power out at Fout (Watts)
Input Frequency (Hertz)
Total Capacitance @ -6 Volts (F)
0.8 for N ≤ 4 (N = order of multiplication)
1.5 for N>4
Where:
Po
FIN
CT-6
K
K
Bias Resistor Selection (Rb)
The bias resistor value can be calculated by:
Rb
=
Where:
TL
N
CT-6
=
=
=
Lifetime (seconds)
Order of Multiplication
Total Capacitance @ -6 Volts (F)
Capacitance (CT)
The capacitance reactance of the varactor at the operating bias should be a minimum of 30 ohms and
preferably a maximum of 60 ohms at the output frequency (if the diode environment is 50 ohms).
Special higher power circuits can be used with lower reactances, but efficiency will suffer.
An additional constraint is imposed because this capacitance must be compatible with the required diode
thermal resistance. Thermal resistance is inversely proportional to capacitance.
Minor Carrier Lifetime (TL)
Lifetime is a measure of the time required for stored charge to be recovered. It should be long enough
for the diode to permit RF current to reach a negative peak before it ‘snaps’ back to a high impedance
state.
The lifetime of a diode should be a minimum of 10 times the length of a period of the input frequency,
i.e.
TL ≥
and
is better choice
Snap Time (TS)
The snap time or transition time in a stored charge device is the time for the diode to switch from a
conducting to a non-conducting state. This is usually measured between the 20% and 80% recovery
points. Snap time should be less than a period of the output frequency.
Package Parasitics (LS,CP)
The diode package parasitics should be small enough so that the series and parallel resonances will be
well above the maximum output frequency. Package parasitics for most common case styles are listed in
the case style index.
Thermal Resistance
The thermal resistance of the diode must be small enough to allow the diode to remain within the
maximum allowable operating temperature. It must be commensurate with the power to be dissipated,
i.e.
Θ
Where:
=
Tmax - T4
P
=
Thermal Resistance (°C/W)
Θ Tmax =
Recommended maximum allowable diode temperature (150°C)
TA
=
Heat sink maximum temperature (°C)
P
=
Power dissipated in the diode under worst case
- (Power in – Power out) (Watts)
Tuning Varactor Diodes
Ceramic Packaged Silicon Tuning Varactor Diodes
The ML4300 Series of silicon microwave tuning varactor diodes has been designed to obtain the highest
Q possible. Each device in this series has a high density silicon dioxide passivation, which results in
exceptionally low leakage currents and low post tuning drift.
This series is ideally suited for frequency tuning applications up to 20 GHz. These devices are designed
for use in solid state electronic tuning of transistor, Gunn and IMPATT oscillators. They may also be used
in tunable filters, phase shifters up and down converters and low order multipliers.
Specifications @ +25°C
Type
Number
ML4310
ML4311
ML4312
ML4313
ML4314
ML4315
ML4316
ML4317
ML4318
ML4319
ML4331
ML4332
ML4333
ML4334
ML4335
ML4336
ML4337
ML4338
ML4339
ML4340
ML4341
ML4342
ML4343
ML4351
ML4352
ML4353
ML4354
ML4355
ML4256
ML4357
ML4358
ML4259
ML4360
ML4361
ML4362
ML4363
ML4364
ML4365
Breakdown
Voltage
Volts (V)
Capacitance CT-6 (pF)
Capacitance
Ratio
Min.
Min.
Typ.
Max.
CTO/CT VB
25
25
25
25
25
25
25
25
25
25
40
40
40
40
40
40
40
40
40
40
40
40
40
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
0.40
0.56
0.76
1.00
1.55
1.90
2.30
2.85
3.40
4.10
0.56
0.74
1.00
1.55
1.90
2.30
2.85
3.40
4.10
4.90
5.90
7.20
8.70
0.56
0.74
1.00
1.55
1.90
2.30
2.85
3.40
4.10
4.90
5.90
7.20
8.70
10.6
13.0
0.5
0.7
0.9
1.2
1.8
2.2
2.7
3.3
3.9
4.7
0.7
0.9
1.2
1.8
2.2
2.7
3.3
3.9
4.7
5.6
6.8
8.2
10.0
0.7
0.9
.12
.18
2.2
2.7
3.3
3.9
4.7
5.6
6.8
8.2
10.0
12.0
15.0
0.60
0.84
1.06
1.40
2.05
2.50
3.10
3.75
4.40
5.30
0.84
1.06
1.40
2.05
2.50
3.10
3.75
4.40
5.30
6.30
7.70
9.20
11.3
0.84
1.06
1.40
2.05
2.50
3.10
3.75
4.40
5.30
6.30
7.70
9.20
11.3
13.4
17.0
2.3
3.0
3.4
3.7
4.1
4.3
4.4
4.6
4.6
4.7
3.4
4.0
4.3
5.0
5.3
5.5
5.7
5.8
6.0
6.0
6.2
6.3
6.3
3.5
4.2
4.5
5.5
5.8
6.1
6.4
6.5
6.7
6.8
6.9
7.0
7.1
7.2
7.3
Notes:
1.
Alternative cast styles available on request.
2.
Storage / Operating Temperature range -65°C to +150°C
Quality
Factor
Min.
Std. Case
Style
5500
5000
5000
4800
4500
4000
4000
3500
3000
3000
4000
3800
3500
3000
2700
2700
2400
2200
2000
2000
1800
1700
1600
2300
2200
2000
1800
1700
1700
1600
1500
1400
1400
1200
1200
1000
1000
1000
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
PIN Diodes
Fast Switching PIN and NIP Diodes
The ML 4600 Series of PIN and NIP diodes are designed for control applications such as RF switching
limiting, duplexing, phase shifting, modulation and pulse forming. The yare designed to provide two
impedance states, one approaching an open circuit when reverse biased and the other a short circuit
when forward biased.
Optimised dc and RF parameters are obtained by employing high quality P on P+ and N and N+ epitaxial
silicon and careful control of device processing. The complete range of diodes is achieved by
optimisation of the diodes ‘I’ region width and junction area.
Specifications @ +25°C
Type
Number
Breakdown
Voltage (V)
Min
Typ
Capacitance
CT-10 (pF)
Typ
Max
Forward
Resistance
(Ohms)
Typ
Max
Minority
Carrier
Lifetime
(ns)
Typ
Switching
Time (ns)
Typ
Thermal
Resistance
(°C/W)
Typ
Max
Standard
Case
Style
ML4603
35
-
0.15
0.20
1.5
1.7
150
15
-
500
54
ML4606
35
-
0.35
0.40
0.9
1.0
150
15
-
500
54
ML4605
35
-
1.10
1.20
0.7
0.8
150
15
-
500
54
ML4606
100
-
0.15
0.20
1.5
1.7
350
35
-
500
54
ML4607
100
-
0.35
0.40
0.9
10
350
35
-
500
54
54
ML4608
100
-
1.10
1.20
0.7
0.8
350
35
-
500
ML4610
15
25
0.35
0.40
1.2
1.5
10
1
70
80
30
ML4611
40
60
0.30
0.35
1.3
1.5
20
2
60
70
30
ML4612
40
60
0.40
0.50
1.0
1.3
20
2
50
60
30
ML4614
70
90
0.30
0.35
1.3
1.5
60
6
50
60
30
ML4615
70
90
0.40
0.50
1.0
1.3
60
6
40
50
30
ML4617
100
120
0.30
0.35
1.3
1.5
120
12
40
50
30
ML4618
100
120
0.40
0.50
1.0
1.3
120
12
40
45
30
ML4619
100
120
0.50
0.60
0.8
1.0
120
12
35
40
30
ML4622
150
180
0.30
0.35
1.0
1.3
250
25
40
45
30
ML4623
150
180
0.40
0.50
0.8
1.0
250
25
35
40
30
ML4624
150
180
0.50
0.60
0.6
0.8
250
25
30
35
30
ML4627
200
250
0.30
0.35
1.0
1.3
400
40
35
40
30
ML4628
200
250
0.40
0.50
0.8
1.0
400
40
30
35
30
ML4629
200
250
0.5
0.60
0.6
0.8
400
40
25
30
30
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
Breakdown Voltage measured at IR = 10µA.
Junction capacitance measured at f = 1 MHz.
Minority carrier lifetime measured at If = 10 mA
Thermal resistance measurement is based on an infinite heat sink.
Forward bias series resistance measured at If = 40 mA and f = 3.3 GHz.
The following types are available as NIP diodes, add suffix ‘P’.
4610P, 4611P, 4612P, 4614P, 4615P, 4617P, 4618P, 4619P, 4622P,
4623P, 4624P, 4627P, 4628P, 4629P.
Alternative case styles available on request. The above diodes are also available in chip form.
Storage / Operating Temperature Range: -65°C to +150°C.
High Power PIN Diodes
ML 4640 and 4650 high breakdown PIN diodes exhibit low thermal resistance and are designed for use in
high power switches, receiver protectors are phase shifters from 0.1 to 18 GHz.
Specifications @ +25°C
Forward
Resistance
(Ohms)
Typ
Max
Minority
Carrier
Lifetime
(ns)
Typ
Switching
Time (ns)
Typ
Thermal
Resistance
(°C/W)
Typ
Max
Breakdown
Voltage (V)
Min
Typ
Capacitance
CT-50 (pF)
Typ
Max
ML4640
300
350
0.30
0.35
1.0
1.3
0.5
50
25
30
30
ML4641
300
350
0.40
0.45
0.8
1.0
0.75
75
20
25
30
ML4642
300
350
0.50
0.60
0.6
0.8
1.0
100
20
25
30
ML4643
300
350
0.70
0.80
0.5
0.7
1.0
100
15
20
30
ML4644
400
450
0.30
0.35
1.0
1.3
1.0
100
20
25
30
ML4645
400
450
0.40
0.45
0.8
1.0
1.5
150
20
25
30
ML4646
400
450
0.50
0.60
0.6
0.8
2.0
200
15
20
30
ML4647
400
450
0.70
0.80
0.5
0.7
2.0
200
10
15
43
Type
Number
Standard
Case
Style
ML4648
500
550
0.30
0.35
1.0
1.3
1.0
100
20
25
30
ML4649
500
550
0.40
0.45
0.8
1.0
1.5
150
15
20
30
ML4650
500
550
0.50
0.60
0.6
0.8
2.0
200
10
15
30
ML4651
500
550
0.70
0.80
0.5
0.7
20
200
10
15
43
ML4652
600
650
0.30
0.35
1.0
1.3
1.5
150
15
25
30
ML4653
600
650
0.40
0.45
0.8
1.0
2.0
200
10
20
30
ML4654
600
650
0.50
0.60
0.6
0.8
3.0
300
10
15
30
ML4655
600
650
0.70
0.80
0.5
0.7
3.0
300
7
15
43
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
Breakdown Voltage measured at IR = 10µA.
Junction capacitance measured at f = 1 MHz.
Minority carrier lifetime measured at If = 10 mA
Thermal resistance measurement is based on an infinite heat sink.
Forward bias series resistance measured at If = 40 mA and f = 3.3 GHz.
Devices are Cathode heat sink.
Alternative case styles available on request.
Storage / Operating Temperature Range: -65°C to +150°C.
Maximum Power Dissipation = 150°C - TAMBIENT
Thermal Resistance
Broadband PIN Diodes
The ML4660 and 4670 Series contain a passivated PIN diode chip mounted in shunt within a broadband
hermetically sealed package that eliminates the reliability problems associated with devices using epoxy
seals. These devices have low VSRW from 0.1 to 18 GHz and feature low insertion loss at zero or reverse
bias. This matched design eliminates the bandwidth limiting parasitics of conventional packages by
incorporating the lead and chip as part of a 50 Ohm microwave circuit.
These PIN devices are intended for microstrip and stripline control circuits as well as for direct
replacements for existing non-hermetic epoxy encapsulated devices. They can function as power
switches, limiters, phase-shifters, attenuators and duplexers. The package flexibility allows the use of
high power, high voltage PIN chips that can switch up to 5 kW peak RF power or thin PINs that can
switch in less than 10 nanoseconds.
Specifications @ +25°C
Type
Number
Freq.
Range
(GHz)
Insertion Loss (dB)
Isolation
(dB)
Switching
Time
(ns)
Breakdown
Voltage (V)
Thermal
Resistance
(°C/W)
Typ
Max
Heatsink
Polarity
Case
Styles
Typ
Max
Min
Typ
Min
Typ
ML4660
0.1 - 18.0
1.0
1.5
20
25
1
15
25
80
100
Cathode
144,114,115,116
ML4661
0.1 - 12.0
0.5
0.7
20
25
2
40
60
60
80
Cathode
144,114,115,116
ML4662
0.1 - 12.0
0.5
0.7
20
25
2
40
60
40
60
Anode
144,114,115,116
ML4663
0.1 - 12.0
0.5
07
20
25
6
70
90
60
80
Cathode
144,114,115,116
ML4664
0.1 - 12.0
0.5
0.7
20
25
6
70
90
30
40
Anode
144,114,115,116
ML4665
0.1 - 12.0
0.5
0.7
20
25
12
100
120
30
40
Cathode
144,114,115,116
ML4666
0.1 - 12.0
0.5
0.7
20
25
12
100
120
20
30
Anode
144,114,115,116
ML4667
0.1 - 12.0
0.5
0.7
20
25
25
150
180
30
40
Cathode
144,114,115,116
ML4668
0.1 - 12.0
0.5
0.7
20
25
25
150
180
15
25
Anode
144,114,115,116
ML4669
0.1 - 12.0
0.7
1.0
20
25
40
200
250
25
35
Cathode
144,114,115,116
ML4670
0.1 - 12.0
0.7
1.0
20
25
40
200
250
15
25
Anode
144,114,115,116
ML4671
0.1 - 12.0
0.7
1.0
20
25
50
300
250
25
30
Cathode
144,114,115,116
ML4672
0.1 - 12.0
0.7
1.0
20
25
100
400
450
20
25
Cathode
144,114,115,116
ML4673
0.1 - 12.0
0.7
1.0
20
25
100
500
550
20
25
Cathode
144,114,115,116
ML4674
0.1 - 12.0
0.7
1.0
20
25
150
600
650
15
25
Cathode
144,114,115,116
Notes:
1.
2.
3.
4.
5.
Breakdown Voltage measured at IR = 10µA.
Switching time is 10% to 90% detected RF as measured with standard M/A-COM Ltd driver.
Alternative case style available on request.
Storage / Operating Temperature:
-65°C to +150°C
Maximum Power Dissipation
=
150°C – TAMBIENT
Thermal Resistance
Typical Performance
Silicon Dioxide Passivated Chip PIN Diodes
The ML 4P 100 Series of passivated PIN diode chips are produced using modern processing techniques.
Each chip type has an optimally tailored profile and sputtered gold metallisation. Implicit in our
processing techniques are diode uniformity and quality. Our unique total in-house capability allows for a
broad spectrum of epitaxial resistivities and thickness for specific design requirements. Multiple mesa
chips can also be supplied upon request.
Specifications @ +25°C
Type
Number
ML4P 150
ML4P 151
ML4P 152
ML4P 153
ML4P 154
ML4P 155
ML4P 157
ML4P 158
ML4P 159
ML4P 160
ML4P 161
ML4P 162
ML4P 163
ML4P 164
ML4P 165
ML4P 166
ML4P 167
ML4P 168
ML4P 169
ML4P 170
Max
Series
Resistance
(Ohms)
Max.
Minority
Carrier
Lifetime
(ns)
Typ
Reverse
Recovery
Time (ns)
Typ.
Thermal
Resistance
(°C/W) Max
0.10 @ -10V
[email protected] -10V
[email protected] -10V
[email protected] -10V
[email protected] -10V
[email protected] -10V
[email protected] -50V
[email protected] -50V
[email protected] -50V
[email protected] -50V
[email protected] -50V
[email protected] -50V
[email protected] -50V
[email protected] -50V
[email protected] -50V
[email protected] -50V
[email protected] -50V
[email protected] -50V
[email protected] -50V
[email protected] -50V
.15
2.0
1.2
0.9
1.0
2.0
1.5
1.2
1.0
1.9
1.2
1.2
1.0
25
2.0
1.5
1.2
1.5
1.2
1.0
10
10
10
10
10
15
50
60
65
80
90
100
120
150
170
190
220
350
370
380
2
2
2
2
2
4
6
6
7
8
9
10
15
10
20
20
30
40
40
40
60
60
50
40
35
55
50
40
35
60
45
30
25
100
80
45
30
30
30
20
Breakdown
Voltage
Volts (V)
Junction
Capacitance
(pF)
Min.
20
30
30
30
30
40
60
60
60
100
100
100
100
200
200
200
200
500
500
500
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
Breakdown Voltage measured at IR = 10µA.
Junction capacitance measured at f = 1 MHz
Series resistance is measured at a forward current of 100 mA and a frequency of 3.3 GHz.
Minority carrier lifetime is determined with If = 10 mA and IR = 6 mA at the 90% recovery point.
Reverse recovery time is measured at the 90% recovery point with If = 200 mA and IR = 200
mA.
Devices are cathode heat sink, for anode heat sinks please contact the factory.
Alternative case styles available on request.
Storage / Operating temperature = -65°C to +150°C.
High CW Power Plated Heatsink PIN an NIP Diodes
This series of PIN and NIP diodes apply our unique plated heat sink (PHS) process in order to reduce
bother thermal resistance and series resistance. The reduced series resistance makes the low
capacitance versions ideally suited to high frequency operations. The low value of thermal resistance
ensure high C.W. power handling whilst maintaining the fast switching speed.
Specifications @ +25°C
Type
Number
Breakdown
Voltage (V)
Min
Typ
Capacitance
CT-50 (pF)
Typ
Max
Forward
Resistance
(Ohms)
Typ
Max
ML4609
ML4613
ML4616
ML4620
ML4621
ML4626
ML4630
ML4631
15
40
70
100
100
150
200
200
0.40
0.40
0.40
0.40
0.50
0.50
0.40
0.50
0.8
0.8
0.8
0.8
0.6
0.5
0.6
0.5
25
60
90
120
120
200
250
250
0.50
0.50
0.50
0.50
0.60
0.60
0.50
0.60
1.0
1.0
1.0
1.0
0.8
0.7
0.8
0.7
Minority
Carrier
Lifetime
(ns)
Typ
Switching
Time (ns)
Typ
10
20
60
120
120
250
400
400
1
2
6
12
12
25
40
40
Thermal
Resistance
(°C/W)
Typ
Max
40
35
30
25
20
15
15
12
50
40
35
30
25
20
20
15
Standard
Case
Style
30
30
30
30
30
30
30
30
Notes:
1.
2.
3.
4.
5.
6.
7.
Breakdown Voltage measured at IR = 10µA.
Junction capacitance measured at f = 1 MHz
Minority carrier lifetime measured at If = 10 mA.
Thermal resistance measurement is based on an infinite heat sink.
Forward bias series resistance measured at IF – 100 mA and f-= 3.3 GHz.
Switching time is 10% to 90% detected RF as measured with standard API Technologies driver.
Alternative case styles available on request.
Silicon Limiter PIN Diode
The ML 4200 Series is a range of oxide passivated silicon mesa diodes designed for limiter applications,
especially those requiring low turn-on.
Use of special silane grown silicon, together with differential etching and gold diffusion techniques,
produces thin base diodes of low series resistance and closely controlled minority carrier lifetime.
Combined with low inductance packaging, these properties allow operation over a broad frequency range
up to 18 GHz. Hermetic sealing and oxide passivation provide rugged reliable diodes capable of
withstanding stringent environmental requirements.
Specifications @ +25°C
Type
Number
ML4202
Breakdown
Voltage (V)
Min
Typ
Capacitance
CJO (pF)
Min
Max
Forward
Resistance
(Ohms)
Typ
Max.
Thermal
Resistance
(°C/W)
Max
Minority
Carrier
Lifetime (ns)
Typ.
Max.
Standard
Case Styles
ML4204
15
15
25
25
0.30
0.20
0.35
0.25
0.8
1.0
1.0
1.2
60
70
15
15
30
30
ML4206
15
25
0.10
0.15
1.2
1.5
80
10
30
ML4207
50
60
0.30
0.35
0.8
1.0
50
20
30
ML4208
ML4209
50
50
60
60
0.20
0.10
0.25
0.15
1.0
1.2
1.2
1.5
60
70
20
15
30
30
Typical Limiter Performance
Type Number
Peak PIN @
10µs (W) Max
Threshold
(dB)
Typ
Leakage POUT
(dBm) Typ
CW PIN (W)
Max.
Recovery Time
(ns) Typ
ML4202
ML4204
ML4206
ML4207
ML4208
ML4209
200
150
100
400
300
200
10
10
10
15
15
15
24
23
22
29
28
27
3
2
2
4
3
3
15
15
10
20
10
15
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
Breakdown Voltage measured at IR = 10uA.
Forward bias resistance at 40 mA measured at 3.3 GHz.
Junction capacitance measured at 1 MHz.
Minority carrier lifetime at IF = 10 mA and If = 1.7
Threshold is defined as the input power at which
as limiter has 1 dB additional insertion loss over
IR
its 0 dBm value (1 dB compression).
Typical limiter performance at 1.0 GHz.
Alternative case styles available on request.
Storage / Operating Temperature Range: -65°C to +150°C.
MNS Microwave Chip Capacitors
The ML4M Series of MNS (metal-nitride-silicon) silicon chip capacitors are designed specifically for high
reliability and repeatable performance in microwave circuit applications. These devices utilise a low
pressure chemical vapour desposition (LPCVD) technique that results in a very dense uniform nitride
layer. These devices exhibit higher and improved ruggedness over similar MOS, MIS and ceramic
capacitors. Sputtered gold contacts are used to provide a highly reliable metal-to-semiconductor adhesion
and an easily bondable metal pad on each side of the capacitor chip. API Technologies MNS capacitors
have shown no measurable capacitance change when subjected to the rated standoff voltage at 150°C.
The ML4M Series of chip capacitors is an excellent choice for use in hybrid microwave circuits up to Kuband, where low loss, high reliability, small size and temperature stability are prime concerns.
These chip capacitors are suited for applications requiring dc blocks, coupling capacitors, bypass
capacitors, capacitive loads and tuning elements of oscillators, multipliers and filters.
Specifications @ +25°C
Type Number
Capacitance
(pF) ± 10%
Standoff Voltage
Rating (V) Max.
Chip Style
Nominal Top
Contact Diameter
(Mils)
ML4M2001
ML4M2002
ML4M2005
ML4M1010
ML4M2010
ML4M1020
ML4M2020
ML4M1030
ML4M2030
ML4M1040
ML4M2040
ML4M1050
ML4M2050
ML4M1060
ML4M2060
ML4M1080
ML4M2080
ML4M1100
ML4M2100
ML4M1125
ML4M2125
ML4M1150
ML4M2150
ML4M1200
ML4M2200
ML4M1250
ML4M2250
ML4M1300
ML4M2300
ML4M1600
ML4M2600
1
2
5
10
10
20
20
30
30
40
40
50
50
60
60
80
80
100
100
125
125
150
150
200
200
250
250
300
300
600
600
200
200
200
100
200
100
200
100
200
100
200
100
200
100
200
100
200
100
200
100
200
100
200
100
200
100
200
100
200
100
200
132
132
132
132
132
132
132
132
132
132
199
132
199
199
199
199
199
199
200
199
200
200
200
200
201
200
201
201
263
263
267
3.5
4.5
6.0
6.0
8.0
11.0
11.5
11.0
14.0
13.0
16.0
14.0
18.0
16.0
20.0
18.0
23.0
20.0
26.0
22.0
29.0
25.0
31.5
28.0
36.0
32.0
41.0
35.0
45.0
48.0
64.0
Chip Capacitor with Square Bonding Pads
Type Number
Capacitance
(pF) ± 10%
Max Standoff Voltage
Rating (V)
Chip Style
ML4M3010
ML4M3020
ML4M3030
ML4M3040
ML4M3050
ML4M3060
ML4M3070
ML4M3080
ML4M3100
ML4M3150
10
20
30
40
50
60
70
80
100
150
200
200
200
200
100
100
50
100
50
50
350
351
352
353
354
355
356
357
358
359
Chip Styles
Chip
Style
132
199
200
201
263
267
Note:
Notes:
6.
7.
0.51
0.08
0.9
0.10
0.94
0.10
1.19
0.10
0.010
0.10
5% capacitance tolerance is
available on request.
Other capacitance and standoff
voltage values are available on
request.
Capacitance measured at 1 MHz.
Temperature coefficient of
capacitance is nominally 180
PPM/°C
Device failure may occur if standoff
voltage ratio is exceeded.
Operating temperature -55°C to
+200°C
Storage temperature -55°C to
+225°C
Dimension
Min
Inches
Max
A
B
0.018
-
357
C
A
B
C
358
353
5.
0.024
0.006
0.031
0.005
0.041
0.005
0.051
0.005
0.060
0.005
0.070
0.005
0.021
0.005
0.009
0.021
0.005
0.012
0.021
0.005
0.015
0.023
0.005
0.017
0.023
0.005
0.018
0.021
0.005
0.14
352
4.
0.130
0.003
0.020
0.0004
0.037
0.004
0.047
0.004
0.004
0.004
Millimeters
Min
Max
0.013
0.018
0.018
0.020
0.020
0.018
-
351
3.
A
B
A
B
A
B
A
B
A
B
A
B
Max
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
350
2.
Min
0.61
0.15
0.79
0.13
1.04
0.13
1.30
0.13
1.52
0.13
1.78
0.13
For ‘C’ dimension on above case styles, see specification.
Chip
Style
1.
Inches
Dimension
354
355
356
359
Millimeters
Min
Max
0.46
0.46
0.46
0.51
0.51
0.46
-
0.53
0.13
0.23
0.53
0.013
0.30
0.53
0.13
0.38
0.58
0.13
0.43
0.58
0.13
0.46
0.53
0.13
0.36
0.021
0.005
0.46
-
0.53
0.13
0.020
-
0.011
0.023
0.005
0.017
0.51
-
0.28
0.58
0.13
0.43
A
B
0.018
-
0.021
0.005
0.46
-
0.53
0.13
C
A
B
C
0.018
-
0.013
0.021
0.005
0.016
0.46
-
0.33
0.53
0.13
0.41
Case Style Index
3
11
Dim
Inches
Min
Max
Millimeters
Min
Max
A
B
0.800
0.292
0.840
0.296
20.32
7.42
21.34
7.52
C
D
E
F
G
H
J
K
L
M
0.246
0.753
0.180
0.193
0.047
0.222
0.195
0.092
0.030
0.020
0.250
0.783
0.190
0.199
0.057
0.240
0.215
0.094
0.045
0.030
6.25
19.13
4.57
4.90
1.19
5.64
4..95
2.34
0.76
0.51
6.35
19.89
4.83
5.05
1.45
6.10
5.46
2.39
1.17
0.76
Dim
A
B
C
D
E
F
Inches
Min
Max
0.734
0.215
0.147
0.011
0.031
42°C
0.766
0.220
0.028
0.033
48°
Millimeters
Min
Max
18.64
5.46
3.73
0.28
0.79
42°
19.46
5.59
0.71
0.84
48°
CP 0.12 pF Typical
LS 0.50 nH Typical
30
31
Dim
Inches
Min
Max
Millimeters
Min
Max
A
B
0.800
0.292
0.840
0.296
20.32
7.42
21.34
7.52
C
D
E
F
G
H
0.246
0.753
0.180
0.193
0.047
0.222
0.250
0.783
0.190
0.199
0.057
0.240
6.25
19.13
4.57
4.90
1.19
5.64
6.35
19.89
4.83
5.05
1.45
6.10
GaAs:
CP 0.18 µF Typical
LS 0.60 mm Typical
Dim
A
B
C
D
Inches
Min
Max
0.119
0.085
0.016
0.077
0.127
0.097
0.024
0.083
Millimeters
Min
Max
3.02
2.16
0.41
1.96
3.23
2.46
0.61
2.11
CP 0.18 pF Typical
LS 0.60 nH Typical
Silicon:
CP 0.18 pF Typical
LS 0.40 mm Typical
32
33
Dim
A
B
C
D
Inches
Min
Max
0.119
0.055
0.077
-
0.125
0.065
0.083
0.025
Millimeters
Min
Max
3.02
1.40
1.96
-
Dim
3.18
1.65
2.11
0.64
A
B
C
D
E
F
CP 0.12 pF Typical
LS 0.50 nH Typical
34
Inches
Min
Max
0.058
0.050
0.029
0.048
0.022
0.024
0.062
0.060
0.031
0.052
0.028
0.026
Millimeters
Min
Max
1.47
1.27
0.74
1.22
0.56
0.61
1.57
1.52
0.79
1.32
0.71
0.66
36
Dim
Inches
Min
Max
Millimeters
Min
Max
A
B
0.798
-
0.824
0.240
20.26
-
20.93
6.10
C
D
E
F
G
H
J
K
L
M
0.205
0.092
0.246
0.292
0.180
0.100
0.067
0.195
0.246
0.050
0.215
0.096
0.250
0.296
0.190
0.199
0.250
0.056
5.21
2.34
6.25
7.42
4.57
2.54
1.70
4.95
6.25
1.27
5.46
2.44
6.35
7.52
4.83
5.05
6.35
1.42
Dim
A
B
C
D
E
F
G
Inches
Min
Max
0.119
0.143
0.060
0.060
0.077
0.086
0.125
0.163
0.064
0.064
0.025
0.083
0.090
Millimeters
Min
Max
3.02
3.63
1.52
1.52
1.96
2.18
3.18
4.14
1.63
1.63
0.64
2.11
2.44
GaAs:
Silicon:
CP 0.18 µF Typical
CP 0.18 pF Typical
LS 0.60 mm Typical
LS 0.40 mm Typical
43
54
Dim
Inches
Min
Max
Millimeters
Min
Max
A
B
C
D
E
F
G
0.255
0.765
0.440
0.460
0.708
0.212
020 x 45° Ref
0.119
0.131
50 Ref
0.025
0.035
6.48
6.73
11.18
11.68
5.28
5.38
0.51 x 45° Ref
3.02
3.33
50 Ref
0.64
0.89
Dim
Inches
Min
Max
Millimeters
Min
Max
56
Dim
A
B
C
D
Inches
Min
Max
0.145
0.068
0.014
1.000
0.165
0.075
0.016
1.500
Millimeters
Min
Max
3.68
1.72
0.35
25.40
4.19
1.91
0.41
38.10
CP 0.05 pF Typical
LS 1.00 nH Typical
81
A
B
0.766
-
0.797
0.240
19.46
-
C
D
E
F
G
H
J
K
L
M
0.130
0.145
0.180
0.097
0.155
0.180
0.185
0.030
0.095
-
Ref
0.155
0.190
0.165
0.165
0.190
0.195
0.046
0.105
0.030
3.30
3.68
4.57
2.34
3.94
4.57
4.70
0.76
7.41
-
20.12
6.10
Dim
Ref
3.94
4.83
2.39
4.19
4.83
4.95
1.17
2.67
0.76
A
B
C
D
E
F
G
Inches
Min
Max
0.072
0..038
0.010
0.012
0.009
0.003
0.029
0.078
0.043
0.020
0.035
Millimeters
Min
Max
1.83
0.97
0.25
0.30
0.23
0.08
0.74
1.98
1.09
0.51
0.89
CP 0.20 pF Typical
LS 0.50 nH Typical
CP 0.35 pF Typical
LS 0.30 nH Typical
81A
91
Dim
Inches
Min
Max
A
0.072
0.078
B
0.038
0.043
C
0.010
0.020
D
0.012
E
0.009
F
0.003
G
0.029
0.035
CP = 0.20 pF Typical
LS = 0.50 nH Typical
Millimeters
Min
Max
1.83
0.33
0.25
0.30
0.23
0.008
0.74
Dim
1.98
0.51
0.51
0.89
92
Inches
Min
Max
A
0.119
0.127
B
0.115
0.129
C
0.060
0.064
D
0.060
0.062
E
0.077
0.083
F
0.016
0.024
G
0.055
0.065
CP = 0.30 pF Typical
LS = 0.40 nH Typical
Millimeters
Min
Max
3.02
2.92
1.52
1.52
1.96
0.41
1.40
3.23
3.28
1.63
1.57
2.11
0.61
1.65
93
Dim
Inches
Min
Max
A
0.119
0.127
B
0.174
0.194
C
0.060
0.064
D
0.077
0.083
E
0.060
0.062
F
0.016
0.024
G
0.055
0.065
CP = 0.30 pF Typical
LS = 0.40 nH Typical
Millimeters
Min
Max
3.02
4.42
1.53
1.96
1.52
0.41
1.40
3.23
4.93
1.63
2.11
1.57
0.61
1.65
Dim
Inches
Min
Max
A
0.059
0.069
B
0.070
0.080
C
0.047
0.053
D
0.015
E
0.040
0.050
F
0.040
0.010
G
0.024
0.026
CP = 0.15 pF Typical
LS = 0.17 nH Typical
Millimeters
Min
Max
1.50
1.78
1.19
1.02
0.10
0.61
1.75
2.03
1.35
0.38
1.27
0.25
0.66
94
95
Dim
A
B
C
D
Inches
Min
Max
0.078
0.040
0.047
0.086
0.050
0.015
0.053
Millimeters
Min
Max
1.98
1.02
1.19
Dim
2.18
1.27
0.38
1.35
CP = 0.15 pF Typical
LS = 0.17 nH Typical
96
97
Dim
A
B
C
D
E
F
G
Inches
Min
Max
0.078
0.070
0.047
0.040
0.024
0.004
-
0.086
0.080
0.053
0.050
0.026
0.010
0.015
Millimeters
Min
Max
1.98
1.78
1.19
1.02
0.61
0.10
-
Inches
Min
Max
A
0.078
0.086
B
0.100
0.110
C
0.024
0.026
D
0.015
E
0.040
0.050
F
0.004
0.010
G
0.029
0.031
H
0.047
0.053
CP = 0.15 pF Typical
LS = 0.17 nH Typical
CP = 0.15 pF Typical
LS = 0.17 nH Typical
101
A
0.078
0.086
B
0.070
0.080
C
0.024
0.026
D
0.015
E
0.040
0.050
F
0.040
0.010
G
0.047
0.053
CP = 0.15 pF Typical
LS = 0.17 nH Typical
Dim
2.18
2.03
1.35
1.27
0.66
0.25
0.38
Inches
Min
Max
Millimeters
Min
Max
1.98
1.78
0.61
1.02
0.10
1.19
2.18
2.03
0.66
0.35
1.22
0.25
1.35
Millimeters
Min
Max
1.98
2.54
0.61
1.02
0.10
0.74
1.19
2.18
2.79
0.66
0.38
1.27
0.25
0.79
1.35
103
Dim
A
B
C
D
E
F
Inches
Min
Max
0.155
0.205
0.120
0.045
0.165
0.225
0.030
0.130
0.030
Ref
Millimeters
Min
Max
3.94
5.21
3.05
1.15
Dim
4.19
5.72
0.76
3.30
0.76
Ref
108
A
B
C
D
E
F
Inches
Min
Max
0.119
0.188
0.016
0.058
0.098
0.009
0.127
0.208
0.024
0.071
0.102
0.011
Millimeters
Min
Max
3.02
4.78
0.41
1.47
2.49
0.23
3.23
5.28
0.61
1.80
2.59
0.28
109
Dim
A
B
C
D
E
F
Inches
Min
Max
0.119
0.085
0.077
0.975
0.002
0.077
0.127
0.097
0.083
1.025
0.004
0.083
Millimeters
Min
Max
3.02
2.16
1.96
24.77
0.05
1.96
3.23
2.46
2.11
25.04
0.09
2.11
111
Dim
A
B
C
D
E
F
G
H
Inches
Min
Max
0.119
0.188
0.098
0.57
0.016
0.009
0.025
0.015
CP 0.27 pF Typical
LS 0.30 nH Typical
0.127
0.208
0.102
0.071
0.024
0.011
0.045
0.025
Millimeters
Min
Max
3.02
4.78
2.49
1.45
0.41
0.23
0.64
0.38
3.23
5.28
2.59
1.80
0.61
0.28
1.14
0.64
Dim
Inches
Min
Max
A
0.259
0.267
B
0.436
0.456
C
0.0277
0.033
D
0.118
0.134
E
0.207
0.213
F
0.317
0.323
G
40°
50°
H
0.193
0.199
J
0.110
0.130
CP = 0.75 pF Typical
LS = 0.75 nH Typical
Millimeters
Min
Max
6.58
11.07
0.69
3.00
5.26
8.05
40°
4.90
2.79
6.78
11.58
0.84
3.40
5.41
8.20
50°
5.05
3.30
108
109
Dim
A
B
C
D
E
F
G
Inches
Min
Max
0.139
0.205
0.074
0.120
450° x
0.149
0.225
0.030
0.084
0.130
0.025
0.020
Millimeters
Min
Max
3.53
5.21
1.88
3.05
45° x
Dim
3.78
5.72
0.76
2.13
3.30
0.64
0.51
115
A
B
C
D
E
F
G
H
J
K
L
Inches
Min
Max
0.380
0.120
0.030
0.058
0.205
0.050
0.025
0.131
0.635
0.002
0.255
0.400
0.140
0.060
0.072
0.070
0.035
0.137
0.695
0.006
Millimeters
Min
Max
9.65
3.05
0.76
1.47
5.21
1.27
0.64
3.33
16.13
0.05
6.48
10.16
3.56
1.52
1.83
1.78
0.89
3.48
17.65
0.152
116
Dim
A
B
C
D
E
F
Inches
Min
Max
0.120
0.002
0.058
0.030
0.660
0.255
0.140
0.006
0.072
0.060
0.670
Millimeters
Min
Max
3.05
0.05
1.47
0.76
16.76
Dim
6.48
3.56
0.15
1.83
1.52
17.01
118
A
B
C
D
E
Inches
Min
Max
0.090
0.032
0.095
0.003
0.018
0.110
0.038
0.105
0.005
0.022
Millimeters
Min
Max
2.29
0.81
2.41
0.08
0.46
2.79
0.96
2.67
0.13
0.56
119
Dim
A
B
C
D
E
F
G
H
Inches
Min
Max
0.098
0.165
0.008
0.014
0.008
0.015
0.025
0.048
0.102
0.185
0.012
0.018
0.012
0.025
0.045
0.052
Millimeters
Min
Max
2.49
4.19
0.20
0.36
0.20
0.38
0.64
1.22
Dim
2.59
4.70
0.30
0.46
.0.31
0.64
1.14
1.32
A
B
C
D
E
F
G
H
Inches
Min
Max
0.078
0.190
0.009
0.060
0.070
0.060
25°
0.060
0.086
0.210
0.015
0.064
0.082
0.064
35°
0.064
CP 0.22 pF Typical
CP 0.15 pF Typical
LS 0.16 nH Typical
LS 0.50 nH Typical
120
Millimeters
Min
Max
1.98
4.83
0.23
1.52
1.78
1.52
25°
1.52
2.18
5.33
0.38
1.63
2.08
1.63
35°
1.63
128
Dim
A
B
C
Inches
Min
Max
0.051
0.040
-
CP 0.13 pF Typical
LS 0.40 nH Typical
0.055
0.050
0.015
Millimeters
Min
Max
1.30
1.02
-
1.40
1.27
0.38
Dim
A
B
C
D
E
F
G
H
Inches
Min
Max
0.077
0.4545
0.022
0.047
0.0295
0.002
0.010
0.0015
CP 0.23 pF Typical
LS 0.20 nH Typical
0.083
0.0675
0.028
0.053
0.0325
0.007
0.015
0.0030
Millimeters
Min
Max
1.96
1.384
0.56
1.19
0.749
0.05
0.25
0.038
2.11
1.715
0.71
1.35
0.826
0.18
0.38
0.076
130
131
Dim
A
B
Inches
Min
Max
0.075
0.0085
0.095
0.0105
Millimeters
Min
Max
1.90
0.021
Dim
2.41
0.026
132
A
B
Inches
Min
Max
0.030
0.0085
0.035
0.0105
Millimeters
Min
Max
0.76
0.216
0.83
0.260
134
Dim
A
B
Inches
Min
Max
0.020
0.003
0.024
0.006
Millimeters
Min
Max
0.50
0.06
Dim
0.61
0.15
135
A
B
Inches
Min
Max
0.0135
0.0035
0.0165
0.065
Millimeters
Min
Max
0.34
0.09
137
Dim
A
B
C
Inches
Min
Max
0.013
0.004
0.001
0.017
0.006
-
Millimeters
Min
Max
0.33
0.10
0.23
Dim
0.43
0.15
-
A
B
C
D
E
Inches
Min
Max
0.090
0.095
0.003
0.018
0.110
0.050
0.105
0.005
0.022
Millimeters
Min
Max
2.29
2.41
0.08
0.46
CP 0.05 pF Typical
138
144
Dim
A
B
C
D
E
F
G
H
J
Inches
Min
Max
0.113
0.140
0.016
0.027
0.015
0.068
0.025
0.018
0.015
0.118
0.145
0.019
0.034
0.025
0.070
0.045
0.022
0.025
Millimeters
Min
Max
2.87
3.56
0.41
0.69
0.38
1.73
0.64
0.46
0.38
Dim
3.00
3.68
0.48
0.86
0.64
1.78
1.14
0.56
0.64
A
B
C
D
E
F
G
H
J
K
CP 0.18 pF Typical
Inches
Min
Max
0.405
0.240
0.120
0.155
0.195
0.015
0.092
0.075
0.056
0.075
0.415
0.260
0.130
0.165
0.215
0.035
0.100
0.085
0.066
0.085
Millimeters
Min
Max
10.16
6.10
3.05
3.94
4.95
0.38
2.34
1.91
1.42
1.91
LS 0.10 nH Typical
148
155
Dim
A
B
C
D
E
F
G
H
Inches
Min
Max
0.113
0.167
0.018
0.040
0.015
0.035
0.025
0.048
0.118
0.187
0.022
0.052
0.025
0.045
0.035
0.052
Millimeters
Min
Max
2.87
4.24
0.46
1.02
0.38
0.89
0.64
1.2
Dim
3.00
4.75
0.56
1.32
0.64
1.14
0.89
1.32
A
B
C
D
E
F
G
H
Inches
Min
Max
0.43
0.026
0.022
0.007
0.029
0.024
0.010
0.001
CP 0.26 pF Typical
CP 0.13 pF Typical
LS 0.16 nH Typical
LS 0.17 nH Typical
166
0.047
0.034
0.028
0.010
0.031
0.026
0.016
0.002
Millimeters
Min
Max
1.09
0.66
0.56
0.18
0.74
0.61
0.25
0.03
168
Dim
A
B
C
D
E
F
Inches
Min
Max
0.043
0.026
0.029
0.001
0.010
0.006
0.047
0.033
0.031
0.002
0.016
0.008
Millimeters
Min
Max
1.09
0.66
0.74
0.03
0.25
0.15
1.19
0.84
0.79
0.05
0.41
0.20
Dim
A
B
C
D
E
F
G
H
Inches
Min
Max
0.079
0.084
0.008
0.028
0.028
0.024
0.024
0.049
CP 0.13 pF Typical
CP 0.23 pF Typical
LS 0.16 nH Typical
LS 0.20 nH Typical
0.081
0.096
0.010
0.032
0.032
0.026
0.026
0.051
Millimeters
Min
Max
2.01
2.13
0.20
0.71
0.71
0.61
0.61
1.24
186
188
Dim
A
B
C
D
E
Inches
Min
Max
0.094
0.031
0.019
0.0025
0.130
0.102
0.044
0.021
0.0035
0.170
Millimeters
Min
Max
2.39
0.79
0.48
0.06
3.30
Dim
2.59
1.12
0.53
0.08
4.32
191
A
B
C
D
E
F
Inches
Min
Max
0.055
0.024
0.007
0.007
0.017
0.020
0.060
0.030
0.014
0.027
Millimeters
Min
Max
1.40
0.61
0.18
0.18
0.43
0.51
1.52
0.76
0.36
0.69
255
Dim
A
B
C
D
E
F
Inches
Min
Max
0.078
0.048
0.038
0.015
0.027
0.045
0.082
0.059
0.042
0.019
0.034
0.055
Millimeters
Min
Max
1.98
1.22
0.97
0.38
0.69
1.14
Dim
2.08
1.50
1.07
0.48
0.86
1.40
A
B
Inches
Min
Max
0.075
0.045
0.085
0.055
Millimeters
Min
Max
1.90
1.14
2.16
1.40
CP 0.36 pF Typical
LS 0.10 nH Typical
259
270
Dim
Inches
Min
Max
Millimeters
Min
Max
A
B
0.595
0.166
0.650
0.170
15.11
4.22
15.37
4.32
C
D
E
F
G
H
J
K
L
M
0.115
0.214
0.428
0.048
0.045
0.091
0.032
0.200
0.061
0.004
0.125
0.219
0.438
0.052
0.055
0.95
0.036
0.071
0.006
2.92
5.44
10.87
1.22
1.14
2.31
0.81
5.08
1.55
0.10
3.18
5.56
11.13
1.32
1.39
2.41
0.91
1.80
0.15
273
Dim
A
B
C
D
E
F
G
Inches
Min
Max
0.094
0.094
0.019
0.013
0.200
0.025
0.0027
0.102
0.102
0.021
0.017
0.035
0.0033
Millimeters
Min
Max
2.39
2.39
0.48
0.33
5.08
0.64
0.069
2.59
2.59
0.53
0.43
0.89
0.084
275
Dim
A
B
C
D
E
F
G
Inches
Min
Max
0.120
0.198
0.120
0.110
0.015
0.030
0.130
0.218
0.130
0.120
0.025
0.025
0.040
Millimeters
Min
Max
3.05
5.03
3.05
2.79
0.38
0.76
Dim
3.30
5.54
3.30
3.05
0.64
0.64
1.02
276
A
B
C
D
E
F
G
H
Inches
Min
Max
0.113
0.159
0.048
0.033
0.025
0.018
0.035
0.015
0.118
0.179
0.052
0.044
0.035
0.022
0.045
0.025
Millimeters
Min
Max
2.87
4.04
1.22
0.48
0.64
0.46
0.89
0.38
3.00
4.55
1.32
1.12
0.89
0.56
1.14
0.64
280
Dim
A
B
C
D
E
F
G
Inches
Min
Max
0.040
0.040
0.051
0.240
0.015
0.060
0.050
0.015
0.055
0.005
0.260
0.025
Millimeters
Min
Max
1.02
1.02
1.30
6.10
0.38
1.53
1.27
0.38
1.40
0.13
6.60
0.64
Dim
A
B
C
D
E
F
G
Inches
Min
Max
0.125
0.090
0.063
0.0095
0.010
0.008
0.100
0.067
0.0105
0.015
0.014
0.0013
Millimeters
Min
Max
3.18
2.29
1.60
0.24
0.25
0.019
2.54
1.70
0.27
0.38
0.36
0.032
Equivalent Parts List
The majority of C.V. register and commercial microwave diodes can be provided depending on demand.
API Technologies also provides a second source of direct equivalents to other manufacturer’s devices, the
majority of which are approved for space use. A comprehensive equivalents list is provided below.
Part Number
IN 5719*
Diode Description
Silicon PIN
API Technologies Equivalent
ML4622-54
5082-0132
5082-0300
5082-0320
5082-0335
5082-0523
5082-0800
5082-0805
5082-0810
5082-0830
5082-0835
5082-0885
5082-3001*
5082-3042*
5082-3043*
5082-3077*
5082-3101
5082-3102
5082-3141*
5082-3188
5082-3201
5082-3202
5082-3303
5082-3304
AH 152
AH 153
AH 154
AH155
AH 156
AH 160
AH 161
AH 162
AH 163
AH 164
AH 165
AH 166
AH 167
AH 168
AH 169
Silicon Multiplier Varactor (Step Recovery)
Silicon Multiplier Varactor (Step Recovery)
Silicon Multiplier Varactor (Step Recovery)
Silicon Multiplier Varactor (Step Recovery)
Silicon Multiplier Varactor (Step Recovery)
Silicon Multiplier Varactor (Step Recovery)
Silicon Multiplier Varactor (Step Recovery)
Silicon Multiplier Varactor (Step Recovery)
Silicon Multiplier Varactor (Step Recovery)
Silicon Multiplier Varactor (Step Recovery)
Silicon Multiplier Varactor (Step Recovery)
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
GaAs Abrupt Junction Tuning Varactor
GaAs Abrupt Junction Tuning Varactor
GaAs Abrupt Junction Tuning Varactor
GaAs Abrupt Junction Tuning Varactor
GaAs Abrupt Junction Tuning Varactor
GaAs Abrupt Junction Tuning Varactor
GaAs Abrupt Junction Tuning Varactor
GaAs Abrupt Junction Tuning Varactor
GaAs Abrupt Junction Tuning Varactor
GaAs Abrupt Junction Tuning Varactor
GaAs Abrupt Junction Tuning Varactor
GaAs Abrupt Junction Tuning Varactor
GaAs Abrupt Junction Tuning Varactor
GaAs Abrupt Junction Tuning Varactor
GaAs Abrupt Junction Tuning Varactor
ML4406-30
ML4409-111
ML4405-111
ML4404-30
ML4405-30
ML4409-111
ML4408-30
ML4407-30
ML4406-30
ML4402-30
ML4402-120
ML4627-54
ML4614-54
ML4611-54
ML4611-54
ML4627P-94
ML4630-94
ML4663-144
ML4605-54
ML4627P-30
ML4630-30
ML4627-30
ML4640-30
ML4512-30
ML4512-30
ML4513-30
ML4514-30
ML4515-30
ML4532-30
ML4532-30
ML4533-30
ML4534-30
ML4533-30
ML4552-30
ML4552-30
ML4553-30
ML4554-30
ML4555-30
Equivalent Parts List
Part Number
Diode Description
API Technologies Equivalent
BBY24-S1
BBY25-S1
BBY33-BB-2
BBY33DA-2
BXY18A2
BXY18AB2
BXY18AB6
BXY42BA-3
BXY42BA-5
BXY42BA-6
BXY43A
BXY43B
BXY43C
BXY44K
CLA 3131-01
CLA 3131-02
CLA 3132-01
CLA 3132-02
CLA 3134-01
CLA 3134-02
CLA 3135-01
CLA 3135-02
CSB 7002-01
CSB 7002-02
CSB 7002-03
CSB 7002-04
CSB 7002-05
CSB 7002-06
CSB 7002-07
CSB 7003-01
CSB 7003-02
CSB 7003-03
CSB 7003-04
CSB 7201-01
CSB 7201-02
CSB 7201-03
DC 2011-2652
DC 4301-4375
DH 252
DH 256
DH 267
DH 292
Silicon Abrupt Junction Tuning Varactor
Silicon Abrupt Junction Tuning Varactor
Silicon Abrupt Junction Tuning Varactor
Silicon Abrupt Junction Tuning Varactor
Silicon Multiplier Varactor (Step Recovery)
Silicon Multiplier Varactor (Step Recovery)
Silicon Multiplier Varactor (Step Recovery)
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon Limiter
Silicon Limiter
Silicon Limiter
Silicon Limiter
Silicon Limiter
Silicon Limiter
Silicon Limiter
Silicon Limiter
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PIN
PIN Diode
Tuning Varactor
Silicon Multiplier Varactor
Silicon Multiplier Varactor
Silicon Multiplier Varactor
Silicon Multiplier Varactor
ML4364
ML4365
ML4317-119
ML4314-30
ML4405-120
ML4405-120
ML4404-120
ML4611-276
ML4611-119
ML4611-30
ML4622-276
ML4622-276
ML4623-276
ML4627-276
ML4204
ML4202
ML4208
ML4207
ML4206
ML4204
ML4209
ML4208
ML4614
ML4614
ML4615
ML4615
ML4611
ML4611
ML4612
ML4617
ML4617
ML4618
ML4619
ML4627
ML4628
ML4629
ML4407
ML4406
ML4404
ML4405
Equivalent Parts List
Part Number
Diode Description
API Technologies Equivalent
DH 401
DH 402
DH 403
DH 404
DH 405
DH 407
DH 408
DH 409
DH 531
DH 532
DH 601
DH 602
DH 603
DH 604
DH 622
DH 623
DH624
DH 625
DH 740
DH 741
DH 741
DH 743
DH 744
DH 745
DH 746
DH 747
DH 7812A
DH 7813A
DH 790
DH 791
DH 792
DH 793
DH 793
DH 794
DH 795
DH 801
DH 802 or 80050
DH 803 or 80052
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
ML4619
ML4624
ML4629
ML4641
ML4623
ML4642
ML4642
ML4643
ML4612
ML4615
ML4202
ML4202
ML4207
ML4207
ML4204
ML4204
ML4204
ML4206
ML4331/ML4332
ML4333
ML4334
ML4336
ML4338
ML4339
ML4340
ML4341
ML4342
ML4343
ML4311/ML4312
ML4313
ML4314
ML4316
ML4316
ML4318
ML4319
ML4642
ML4650
ML4651
PIN
PIN
PIN
PIN
PIN
PIN
PIN
PIN
PIN
PIN
Limiter
Limiter
Limiter
Limiter
Limiter
Limiter
Limiter
Limiter
Abrupt Junction
Abrupt Junction
Abrupt Junction
Abrupt Junction
Abrupt Junction
Abrupt Junction
Abrupt Junction
Abrupt Junction
Abrupt Junction
Abrupt Junction
Abrupt Junction
Abrupt Junction
Abrupt Junction
Abrupt Junction
Abrupt Junction
Abrupt Junction
Abrupt Junction
PIN
PIN
PIN
Tuning
Tuning
Tuning
Tuning
Tuning
Tuning
Tuning
Tuning
Tuning
Tuning
Tuning
Tuning
Tuning
Tuning
Tuning
Tuning
Tuning
Varactor
Varactor
Varactor
Varactor
Varactor
Varactor
Varactor
Varactor
Varactor
Varactor
Varactor
Varactor
Varactor
Varactor
Varactor
Varactor
Varactor
Equivalent Parts List
Part Number
Diode Description
API Technologies Equivalent
DSA 6925
DSA 6925A
DSA 6928
DSA 6928A
DSA 6928B
DVB 6100-A
DVB 6100-C
DVB 6103-D
DVB 6104-B
DVB 6104-C
DVE 4575-B
DVE 4575-C
DVE 4575-D
DVE 4575-E
DVE 4575-F
DVE 4575-G
DVE 4575-H
DVE 4551-B
DVE 4551-C
DVE 4551-D
DVC 4551-E
DVE 4551-F
DVE 4551-G
DVE 4551-H
DVE 6953-B
DVE 6953-C
DVE 6953-C
DVE 6953-D
DVE 6953-E
DVE 6953-F
DVE 6953-G
DVE 6953-H
DVE 6953-J
DVE 6953-K
DVH 6731-01
DVH 6731-02
DVH 6731-03
DVH 6731-04
DVH 6731-05
DVH 6741-02
DVH 6741-03
DVH 6741-04
DVH 6741-05
DVH 6761-02
DVH 6761-03
DVH 6761-04
DVH 6761-05
MH 151
MH 153
VBC
VKT
VSA
VSE
VUE
Silicon PIN
Silicon PIN
Silicon PIN
Silicon PINJ
Silicon PIN
Silicon Multiplier Varactor (Step
Silicon Multiplier Varactor (Step
Silicon Multiplier Varactor (Step
Silicon Multiplier Varactor (Step
Silicon Multiplier Varactor (Step
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
GaAs Abrupt Tuning Varactor
Silicon Abrupt Tuning Varactor
Silicon Abrupt Tuning Varactor
Silicon Abrupt Tuning Varactor
Silicon Abrupt Tuning Varactor
Silicon Abrupt Tuning Varactor
Silicon Abrupt Tuning Varactor
Silicon Abrupt Tuning Varactor
Silicon Abrupt Tuning Varactor
Silicon Abrupt Tuning Varactor
Silicon Abrupt Tuning Varactor
Silicon Abrupt Tuning Varactor
Silicon Abrupt Tuning Varactor
Silicon Abrupt Tuning Varactor
Silicon PIN
Silicon PIN
Tuning Varactor
Tuning Varactor
Tuning Varactor
Multiplier Varactor
Multiplier Varactor
ML4649-30
ML4650-30
ML4649-56
ML4650-56
ML4651-56
ML4404-30
ML4405-30
ML4408-30
ML4409-30
ML4409-30
ML4512-96
ML4512-96
ML4513-96
ML4513-96
ML4514-96
ML4515-96
ML4515-96
ML4512-30
ML4512-30
ML4513-30
ML4513-30
ML4514-30
ML4515-30
ML4515-30
ML4532-96
ML4532-96
ML4532-96
ML4533-96
ML4533-96
ML4534-96
ML4534-96
ML4535-96
ML4536-96
ML4537-96
ML4310-30
ML4310-30
ML4311-30
ML4312-30
ML4313-30
ML4331-30
ML4331-30
ML4332-30
ML4351-30
ML4351-30
ML4351-30
ML4352-30
ML4353-30
ML4669
ML4670
On Application
Recovery)
Recovery)
Recovery)
Recovery)
Recovery)