P50N
06
WF
WFP
50N0
annel MOS
FET
Silicon N-Ch
Cha
OSF
Features
■ RDS(on)(Max 22mΩ)@VGS=10V
■ Ultra-low Gate Charge(Typical 31nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's trench Layout
-based
process .This
Compared
power
drivers
for
mproves the performances
with standard parts form various sources.All of these
MOSFETs
regulators ,
technology
are designed
switching
for
applications in switching
convertors, motor and relay drivers ,and
high power bipolar switching transistors demanding
high speed and low gate drive power.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
60
V
Continuous Drain Current(@Tc=25℃)
50
A
Continuous Drain Current(@Tc=100℃)
38
A
200
A
± 25
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
480
mJ
EAR
Repetitive Avalanche Energy
(Note1)
13
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
5.8
V/ ns
Total Power Dissipation(@Tc=25℃)
130
W
Derating Factor above 25℃
1.3
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
RQJC
RQCS
RQJA
Parameter
Thermal Resistance , Junction -to -Case
Case-to-Sink,Flat, Greased Surface
Thermal Resistance , Junction-to -Ambient
Value
Units
Min
Typ
Max
-
-
0.96
℃/W
-
0.5
-
℃/W
-
-
62.5
℃/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
P50N
06
WF
WFP
50N0
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±20
-
-
V
VDS=60V,VGS=0V
-
-
1
µA
VDS=60V,Tc=125℃
-
-
250
µA
V(BR)DSS
ID=250 µA,VGS=0V
60
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=25A
-
20
22
mΩ
Forward Transconductance
gfs
VDS=25V,ID=25A
-
22
-
S
Input capacitance
Ciss
VDS=25V,
-
1180
1540
Reverse transfer capacitance
Crss
VGS=0V,
-
65
90
Output capacitance
Coss
f=1MHz
-
440
580
VDD=30V,
-
15
40
ID=25A ，
-
105
220
-
60
130
-
65
140
-
31
41
-
8
-
-
13
-
Gate-source breakdown voltage
Drain cut -off current
Drain -source breakdown voltage
IDSS
Rise time
tr
Turn-on time
ton
Switching time
Fall time
tf
Turn-off time
toff
Total gate charge(gate-source
ns
RG=25Ω，
VGS=10V
pF
(Note4,5)
VDD=48V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=50A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
50
A
Pulse drain reverse current
IDRP
-
-
-
200
A
Forward voltage(diode)
VDSF
IDR=50A,VGS=0V
-
-
1.5
V
Reverse recovery time
trr
IDR=50A,VGS=0V,
-
52
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
75
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=0.5mH IAS=50A,VDD=25V,VGS=10V ,Starting TJ=25℃
3.ISD≤50A,di/dt≤380A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
P50N
06
WF
WFP
50N0
Fig.1 Transfer characteristics
Fig.3 Typical Capacitance vs
Drain Current
Fig.2 On -state Characteristics
Fig.4 On -resistance Variation vs
Drain current and gate Voltage
Fig.5 On- resistance variation vs
Fig.6 Gate charge Characteristics
Junction Temperature
3/7
Steady, keep you advance
P50N
06
WF
WFP
50N0
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain current vs
Case Temperature
Fig.9 Transient Thermal Response Curve
4/7
Steady, keep you advance
P50N
06
WF
WFP
50N0
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
5/7
Steady, keep you advance
P50N
06
WF
WFP
50N0
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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P50N
06
WF
WFP
50N0
20 Pa
cka
ge Dim
ension
TO-2
-22
Pac
kage
Dime
Unit:mm
7/7
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