SD106WS Silicon Epitaxial Planar Diode FEATURES Pb z Low turn-on voltage z Fast switching z This device is protected by a PN junction guard ring against Lead-free excessive voltage,such as electrostatic discharge z Ideal for precaution of MOS device ,steering ,biasing , and coupling diodes for fast switching and low logic level application z Microminiature plastic package SOD-323 APPLICATIONS z High speed switching ORDERING INFORMATION Type No. Marking Package Code SD106WS S21 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage VRM 30 V Peak forward Current IFM 200 mA IFSM 1 A Power dissipation Ptot 250 mW Thermal resistance junction to ambient air RθjA 500 ℃/W Junction temperature Tj 150 ℃ Storage temperature TSTG -65 to +150 ℃ Forward surge current ２０１４－０３ ０１版 @tp=10ms ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ SD106WS Silicon Epitaxial Planar Diode ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Reverse breakdown voltage VR 30 Typ. Max. Unit Conditions V IR=100μA 260 Forward voltage VF IF=2mA 320 mV 420 490 550 IF=15mA IF=100mA IF=200mA Reverse current IR 5 μA VR=30V Capacitance between terminals CT 15 pF VR=10V,f=1MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified ２０１４－０３ ０１版 ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ SD106WS Silicon Epitaxial Planar Diode PACKAGE OUTLINE Plastic surface mounted package SOD-323 K SOD-323 C A B D H E J Dim Min Max A 1.60 1.80 B 1.20 1.40 C 0.9 Max D 0.30 Typical E 0.22 0.42 H 0.02 0.1 J K 0.1 Typical 2.55 2.75 All Dimensions in mm SOLDERING FOOTPRINT 0.63 0.83 1.60 2.85 Unit ：mm PACKAGE INFORMATION Device Package Shipping SD106WS SOD-323 3000/Tape&Reel ２０１４－０３ ０１版 ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ