WFP540
Silicon N-Channel MOSFET
Features
□
33A,100V,RDS(on)(Max0.044Ω)@VGS=10V
□
Ultra-low Gate charge(Typical 25nC)
□
Fast Switching Capability
□
100%Avalanche Tested
□
Isolation Voltage (VISO=4000V AC)
□ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe, DMOS technology. this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche
suited
characteristics .This devices is specially well
for half bridge and
electronic
lamp ballast,
full bridge resonant
topology line a
high efficiency switched
mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
Units
Drain Source Voltage
100
V
Continuous Drain Current(@Tc=25℃)
33*
A
Continuous Drain Current(@Tc=100℃)
23*
A
132
*
±30
A
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
435
mJ
EAR
Repetitive Avalanche Energy
(Note1)
12.7
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
6.0
V/ ns
Total Power Dissipation(@Tc=25℃)
127
W
Derating Factor above 25℃
0.85
W/℃
-40~150
℃
300
℃
PD
TJ,Tstg
TL
(Note1)
Junction and Storage Temperature
Channel Temperature
V
*Drain current limited by junction temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
1.18
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
W/T-F002-Rev.A/0 Sep.2012
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WFP540
Electrical Characteristics(Tc=25℃)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Symbol
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=100V,VGS=0V,Tc=25℃
-
-
1
µA
VDS=80V,Tc=150℃
-
-
10
µA
ID=250 µA,VGS=0V
100
-
-
V
-
0.11
-
V/℃
4
V
IDSS
Drain -source breakdown voltage
V(BR)DSS
Breakdown Voltage Temperature
∆BVDSS/∆
Coefficient
TJ
ID=250 µA, referenced to
25℃
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=16.5A
-
-
Forward Transconductance
gfs
VDS=40V,ID=16.5A
-
22
-
Input capacitance
Ciss
VDS=25V,
-
1150
1500
Reverse transfer capacitance
Crss
VGS=0V,
-
62
80
Output capacitance
Coss
f=1MHz
-
320
420
VDD=50V,
-
195
400
Td(on)
ID=33A
-
15
40
tf
RG=25Ω
-
110
230
-
80
170
-
38
51
-
7.5
-
-
18
-
Turn-On Rise time
Switching
Turn-On time
time
Turn-Off Fall time
Turn-Off
time
Total gate charge(gate-source
tr
VDD=80V,
Qg
plus gate-drain)
Ω
S
pF
ns
(Note4,5)
Td(off)
0.044
VGS=10V,
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=33A
(Note4,5)
nC
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
33
A
Pulse drain reverse current
IDRP
-
-
-
132
A
Forward voltage(diode)
VDSF
IDR=7.5A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=7.5A,VGS=0V,
-
80
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
0.22
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=0.6mH IAS=33A,VDD=25V,RG=25Ω,Starting TJ=25℃
3.ISD≤33.A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WFP540
Typical Characteristics
3/7
Steady, keep you advance
WFP540
4/7
Steady, keep you advance
WFP540
TO-220
Package Dimension
Unit:mm
5/7
Steady, keep you advance