2SD1781K Transistors Medium Power Transistor (32V, 0.8A) 2SD1781K zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0~0.1 2.8±0.2 1.6+0.2 −0.1 (1) 0.4 +0.1 −0.05 zStructure Epitaxial planar type NPN silicon transistor +0.1 0.15 −0.06 0.3~0.6 (3) All terminals have same dimensions ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : AF∗ (1) Emitter (2) Base (3) Collector ∗ Denotes hFE zAbsolute maximum ratings (Ta=25qC) Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V IC 0.8 A (DC) ICP 1.5 A (Pulse) PC 200 mW Parameter Collector current Collector power dissipation Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗ ∗ Single pulse Pw=100ms Rev.A 1/3 2SD1781K Transistors zElectrical characteristics (Ta=25qC) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 40 − − V Collector-emitter breakdown voltage BVCEO 32 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50μA ICBO − − 0.5 μA VCB=20V VEB=4V Parameter Collector cutoff current Conditions IC=50μA IEBO − − 0.5 μA VCE(sat) − 0.1 0.4 V IC/IB=500mA/50mA hFE 120 − 390 − VCE=3V, IC=100mA Transition frequency fT − 150 − MHz Output capacitance Cob − 15 − pF Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio zPackaging specifications and hFE hFE 2SD1781K QR hFE values are classified as follows : Taping Item Q R Code T146 hFE 120 to 270 180 to 390 Basic ordering unit (pieces) 3000 Package Type VCE=5V, IE= −50mA, f=100MHz VCB=10V, IE=0A, f=1MHz zElectrical characteristic curves COLLECTOR CURRENT : IC (mA) 200 100 50 20 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 1000 400 1mA 900μA 300 800μA 700μA 600μA 200 500μA 400μA 300μA 100 200μA 100μA 0 VCE=5V Tc=25°C 0 2 4 6 IB=0μA 8 10 500 DC CURRENT GAIN : hFE Ta=25°C VCE=6V 500 COLLECTOR CURRENT : IC (mA) 1000 Ta=100°C 200 100 50 20 10 1 Grounded emitter output characteristics 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 25°C −55°C Fig.3 DC current gain vs. collector current Rev.A 2/3 2SD1781K Ta=25°C 500 200 100 IC/IB=50 50 20 20 10 10 5 1 2 5 10 20 50 100 200 500 1000 1000 500 200 Ta=100°C 25°C −55°C 100 50 20 10 5 1 Ta=25°C f=1MHz IE=0A 20 10 5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5 10 20 50 100 200 500 1000 50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Fig.5 Collector-emitter saturation voltage vs. collector current ( EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.4 Collector-emitter saturation voltage vs. collector current ( ) 50 2 Ta=25°C VCE=5V 500 200 100 50 20 10 −1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 100 1000 lC/lB=10 TRANSITION FREQUENCY : fT (MHz) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Transistors −2 −5 −10 −20 −50 −100 −200 EMITTER CURRENT : IE (mA) Fig.6 ) Gain bandwidth product vs. emitter current Ta=25°C f=1MHz IC=0A 200 100 50 20 10 5 0.1 0.2 0.5 1.0 2.0 5.0 10 EMITTER TO BASE VOLTAGE : VEB (V) Fig.8 Emitter input capacitance vs. emitter-base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1