ACT4533C Rev 1, 14-Nov-14 Wide-Input Sensorless CC/CV Step-Down DC/DC Converter FEATURES • • • • • • • APPLICATIONS 40V Input Voltage Surge 36V Steady State Operation Up to 3.5A output current Output Voltage up to 18V 125kHz Switching Frequency Eases EMI Design • Car Charger/ Adaptor • Rechargeable Portable Devices • General-Purpose CV/CC Power Supply 91% Efficiency ([email protected] at Vin=12V) ACT4533C is a wide input voltage, high efficiency ActiveCC step-down DC/DC converter that operates in either CV (Constant Output Voltage) mode or CC (Constant Output Current) mode. ACT4533C provides up to 3.5A output current at 125kHz switching frequency. GENERAL DESCRIPTION Stable with Low-ESR Ceramic Capacitors to Allow Low-Profile Designs • Integrated Over Voltage Protection • Excellent EMI Performance • Patented ActiveCC Sensorless Constant Current ActiveCC is a patented control scheme to achieve high-accuracy sensorless constant current control. ActiveCC eliminates the expensive, high accuracy current sense resistor, making it ideal for CLA applications. Control Improves Efficiency and Lowers Cost. • Resistor Programmable − Current Limit from 1.5A to 4.0A − Patented Cable Compensation from 0 to ACT4533C integrates adaptive gate drive to achieve excellent EMI performance passing EN55022 Class B EMC standard without adding additional EMI components while maintaining high conversion efficiency. 0.25Ω • ±7.5% CC Accuracy − Compensation of Input /Output Voltage Change − Temperature Compensation − Independent of inductance and Inductor DCR Protection features include cycle-by-cycle current limit, thermal shutdown, and frequency foldback at short circuit. The devices are available in a SOP8EP package and require very few external devices for operation. • 2% Feedback Voltage Accuracy • Advanced Feature Set − Integrated Soft Start − Thermal Shutdown − Secondary Cycle-by-Cycle Current Limit − Protection Against Shorted ISET Pin • SOP-8EP Package CC/CV Curve ACT4533C-001 6.0 VIN = 24V Output Voltage (V) 5.0 VIN = 18V 4.0 3.0 VIN = 12V 2.0 1.0 0.0 1.4 1.6 1.8 2.0 2.2 2.6 2.4 2.8 3.0 Output Current (A) Innovative PowerTM -1- www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT4533C Rev 1, 14-Nov-14 ORDERING INFORMATION PART NUMBER OPERATION AMBIENT TEMPERATURE RANGE OVP/EN PIN PACKAGE PINS PACKING ACT4533CYH-T -40°C to 85°C OVP SOP-8EP 8 TAPE & REEL PIN CONFIGURATION PIN DESCRIPTIONS PIN NAME DESCRIPTION 1 HSB High Side Bias Pin. This provides power to the internal high-side MOSFET gate driver. Connect a 22nF capacitor from HSB pin to SW pin. 2 IN Power Supply Input. Bypass this pin with a 10µF ceramic capacitor to GND, placed as close to the IC as possible. 3 SW 4 GND Ground. Connect this pin to a large PCB copper area for best heat dissipation. Return FB, COMP, and ISET to this GND, and connect this GND to power GND at a single point for best noise immunity. 5 FB Feedback Input. The voltage at this pin is regulated to 0.808V. Connect to the resistor divider between output and GND to set the output voltage. 6 COMP 7 OVP OVP input. If the voltage at this pin exceeds 0.8V, the IC shuts down high-side switch. 8 ISET Output Current Setting Pin. Connect a resistor from ISET to GND to program the output current. Exposed Pad Heat Dissipation Pad. Connect this exposed pad to large ground copper area with copper and vias. Innovative PowerTM Power Switching Output to External Inductor. Error Amplifier Output. This pin is used to compensate the converter. -2- www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT4533C Rev 1, 14-Nov-14 ABSOLUTE MAXIMUM RATINGSc PARAMETER VALUE UNIT -0.3 to 40 V SW to GND -1 to VIN + 1 V HSB to GND VSW - 0.3 to VSW + 7 V -0.3 to + 6 V 46 °C/W Operating Junction Temperature -40 to 150 °C Storage Junction Temperature -55 to 150 °C 300 °C IN to GND FB, ISET, COMP, OVP to GND Junction to Ambient Thermal Resistance Lead Temperature (Soldering 10 sec.) c: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may affect device reliability. Innovative PowerTM -3- www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT4533C Rev 1, 14-Nov-14 ELECTRICAL CHARACTERISTICS (VIN = 12V, TA = 25°C, unless otherwise specified.) PARAMETER TEST CONDITIONS Input Voltage MIN TYP 10 Input Voltage Surge 38 V 40 V 9.7 V Input Voltage Rising VIN UVLO Hysteresis Input Voltage Falling 1.1 Standby Supply Current VFB = 1V 0.9 1.4 mA 808 824 mV 792 Internal Soft-Start Time Error Amplifier Transconductance VFB = VCOMP = 0.808V, ∆ICOMP = ± 10µA Error Amplifier DC Gain 9.4 UNIT VIN UVLO Turn-On Voltage Feedback Voltage 9.0 MAX V 400 µs 650 µA/V 4000 V/V Switching Frequency VFB = 0.808V 125 kHz Foldback Switching Frequency VFB = 0V 18 kHz Maximum Duty Cycle 86 % Minimum On-Time 290 ns COMP to Current Limit Transconductance VCOMP = 1.2V 5.1 A/V Secondary Cycle-by-Cycle Current Limit Duty = 0.5 6.8 A Slope Compensation Duty = DMAX 3.2 A 1.0 V ISET Voltage ISET to IOUT DC Room Temp Current Gain IOUT / ISET, RISET = 7.87kΩ 20000 A/A CC Controller DC Accuracy RISET = 7.87kΩ, VOUT = 4.0V 2650 mA OVP Pin Voltage OVP Pin Voltage Rising 0.8 V OVP Pin Voltage OVP Pin Voltage Falling 0.57 V 85 mΩ High-Side Switch ON-Resistance Thermal Shutdown Temperature Temperature Rising 155 °C Thermal Shutdown Temperature Hysteresis Temperature Falling 25 °C Innovative PowerTM -4- www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT4533C Rev 1, 14-Nov-14 FUNCTIONAL BLOCK DIAGRAM FOR ACT4533C FUNCTIONAL DESCRIPTION increase current to the output. Output current will increase until it reaches the CC limit set by the ISET resistor. At this point, the device will transition from regulating output voltage to regulating output current, and the output voltage will drop with increasing load. CV/CC Loop Regulation As seen in Functional Block Diagram, the ACT4533C is a peak current mode pulse width modulation (PWM) converter with CC and CV control. The converter operates as follows: The Oscillator normally switches at 125kHz. However, if FB voltage is less than 0.6V, then the switching frequency decreases until it reaches a typical value of 18kHz at VFB = 0.15V. A switching cycle starts when the rising edge of the Oscillator clock output causes the High-Side Power Switch to turn on and the Low-Side Power Switch to turn off. With the SW side of the inductor now connected to IN, the inductor current ramps up to store energy in the magnetic field. The inductor current level is measured by the Current Sense Amplifier and added to the Oscillator ramp signal. If the resulting summation is higher than the COMP voltage, the output of the PWM Comparator goes high. When this happens or when Oscillator clock output goes low, the High-Side Power Switch turns off. Over Voltage Protection The ACT4533C has an OVP pin. If the voltage at this pin exceeds 0.8V, the IC shuts down high-side switch. Thermal Shutdown The ACT4533C disables switching when its junction temperature exceeds 155°C and resumes when the temperature has dropped by 25°C. At this point, the SW side of the inductor swings to a diode voltage below ground, causing the inductor current to decrease and magnetic energy to be transferred to output. This state continues until the cycle starts again. The High-Side Power Switch is driven by logic using HSB as the positive rail. This pin is charged to VSW + 5V when the Low-Side Power Switch turns on. The COMP voltage is the integration of the error between FB input and the internal 0.808V reference. If FB is lower than the reference voltage, COMP tends to go higher to Innovative PowerTM -5- www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT4533C Rev 1, 14-Nov-14 APPLICATIONS INFORMATION CC Current Line Compensation Output Voltage Setting When operating at constant current mode, the current limit increase slightly with input voltage. For wide input voltage applications, a resistor RC may be added to compensate line change and keep output high CC accuracy, as shown in Figure 3. Figure 1: Output Voltage Setting Figure 3: Iutput Line Compensation Figure 1 shows the connections for setting the output voltage. Select the proper ratio of the two feedback resistors RFB1 and RFB2 based on the output voltage. Adding a capacitor in parallel with RFB1 helps the system stability. Typically, use RFB2 ≈ 10kΩ and determine RFB1 from the following equation: ⎛ V ⎞ R FB1 = R FB 2 ⎜ OUT − 1 ⎟ 0 . 808 V ⎝ ⎠ Inductor Selection The inductor maintains a continuous current to the output load. This inductor current has a ripple that is dependent on the inductance value: (1) Higher inductance reduces the peak-to-peak ripple current. The trade off for high inductance value is the increase in inductor core size and series resistance, and the reduction in current handling capability. In general, select an inductance value L based on ripple current requirement: CC Current Setting ACT4533C constant current value is set by a resistor connected between the ISET pin and GND. The CC output current is linearly proportional to the current flowing out of the ISET pin. The voltage at ISET is roughly 1.1V and the current gain from ISET to output is roughly 21000 (21mA/1µA). To determine the proper resistor for a desired current, please refer to Figure 2 as below. L= Curve for Programming Output CC Current Output Current vs. RISET 4500 Output Current (mA) With a selected inductor value the peak-to-peak inductor current is estimated as: ACT4533C-002 3500 3000 (2) where VIN is the input voltage, VOUT is the output voltage, fSW is the switching frequency, ILOADMAX is the maximum load current, and KRIPPLE is the ripple factor. Typically, choose KRIPPLE = 30% to correspond to the peak-to-peak ripple current being 30% of the maximum load current. Figure 2: 4000 VOUT × (VIN _VOUT ) VIN fSW ILOADMAX K RIPPLE ILPK _ PK = 2500 VOUT × (VIN _VOUT ) L × VIN × fSW (3) The peak inductor current is estimated as: 2000 1 ILPK = ILOADMAX + ILPK _ PK 2 1500 1000 (4) VIN = 24V, VOUT = 4V 500 2 6 10 14 18 22 The selected inductor should not saturate at ILPK. The maximum output current is calculated as: 26 RISET (kΩ) Innovative PowerTM -6- www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT4533C Rev 1, 14-Nov-14 APPLICATIONS INFORMATION CONT’D IOUTMAX = ILIM _ 1 I _ 2 LPK PK (5) VRIPPLE = IOUTMAX K RIPPLE RESR + LLIM is the internal current limit, which is typically 4.5A, as shown in Electrical Characteristics Table. VIN 2 28 × fSW LC OUT (6) Where IOUTMAX is the maximum output current, KRIPPLE is the ripple factor, RESR is the ESR of the output capacitor, fSW is the switching frequency, L is the inductor value, and COUT is the output capacitance. In the case of ceramic output capacitors, RESR is very small and does not contribute to the ripple. Therefore, a lower capacitance value can be used for ceramic type. In the case of tantalum or electrolytic capacitors, the ripple is dominated by RESR multiplied by the ripple current. In that case, the output capacitor is chosen to have sufficiently low ESR. External High Voltage Bias Diode It is recommended that an external High Voltage Bias diode be added when the system has a 5V fixed input or the power supply generates a 5V output. This helps improve the efficiency of the regulator. The High Voltage Bias diode can be a low cost one such as IN4148 or BAT54. Figure 4: External High Voltage Bias Diode For ceramic output capacitor, typically choose a capacitance of about 22µF. For tantalum or electrolytic capacitors, choose a capacitor with less than 50mΩ ESR. Rectifier Diode Use a Schottky diode as the rectifier to conduct current when the High-Side Power Switch is off. The Schottky diode must have current rating higher than the maximum output current and a reverse voltage rating higher than the maximum input voltage. This diode is also recommended for high duty cycle operation and high output voltage applications. Input Capacitor The input capacitor needs to be carefully selected to maintain sufficiently low ripple at the supply input of the converter. A low ESR capacitor is highly recommended. Since large current flows in and out of this capacitor during switching, its ESR also affects efficiency. The input capacitance needs to be higher than 10µF. The best choice is the ceramic type, however, low ESR tantalum or electrolytic types may also be used provided that the RMS ripple current rating is higher than 50% of the output current. The input capacitor should be placed close to the IN and G pins of the IC, with the shortest traces possible. In the case of tantalum or electrolytic types, they can be further away if a small parallel 0.1µF ceramic capacitor is placed right next to the IC. Output Capacitor The output capacitor also needs to have low ESR to keep low output voltage ripple. The output ripple voltage is: Innovative PowerTM -7- www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT4533C Rev 1, 14-Nov-14 STABILITY COMPENSATION If RCOMP is limited to 15kΩ, then the actual cross over frequency is 6.58 / (VOUTCOUT). Therefore: Figure 5: Stability Compensation C COMP = 6 . 45 × 10 R ESRCOUT ≥ (Min c: CCOMP2 is needed only for high ESR output capacitor C COMP 2 = G EA 2 π A VEA C The second pole P2 is the output pole: I OUT fP 2 = 2 π V OUT C OUT fZ 1 = And finally, the third pole is due to RCOMP and CCOMP2 (if CCOMP2 is used): fP 3 = 1 (11) 2πR COMP C COMP2 ,0 . 006 × VOUT ) (Ω) (15) C OUT R ESRCOUT R COMP (16) RCOMP CCOMP CCOMP2c VOUT COUT 2.5V 47μF Ceramic CAP 5.6kΩ 3.3V 47μF Ceramic CAP 8.2kΩ 10nF None 5V 47μF Ceramic CAP 15kΩ 10nF None 10nF None 2.5V 220μF/10V/30mΩ 15kΩ 2.2nF 47pF 3.3V 220μF/10V/30mΩ 15kΩ 2.2nF 47pF 5V 220μF/10V/30mΩ 15kΩ 2.2nF 47pF c: CCOMP2 is needed for high ESR output capacitor. CCOMP2 ≤ 47pF is recommended. The following steps should be used to compensate the IC: CC Loop Stability STEP 1. Set the cross over frequency at 1/10 of the switching frequency via RCOMP: R COMP = _6 Typical Compensation for Different Output Voltages and Output Capacitors (9) (10) 2 π R COMP C COMP 1 . 77 × 10 C OUT Table 1: The first zero Z1 is due to RCOMP and CCOMP: 1 (14) Table 1 shows some calculated results based on the compensation method above. (8) COMP (F) Though CCOMP2 is unnecessary when the output capacitor has sufficiently low ESR, a small value CCOMP2 such as 100pF may improve stability against PCB layout parasitic effects. (7) The dominant pole P1 is due to CCOMP: fP 1 = VOUT C OUT And the proper value for CCOMP2 is: The feedback loop of the IC is stabilized by the components at the COMP pin, as shown in Figure 5. The DC loop gain of the system is determined by the following equation: 0 . 808 V A VEA G COMP I OUT 6 STEP 3. If the output capacitor’s ESR is high enough to cause a zero at lower than 4 times the cross over frequency, an additional compensation capacitor CCOMP2 is required. The condition for using CCOMP2 is: c A VDC = _ The constant-current control loop is internally compensated over the 1500mA-3500mA output range. No additional external compensation is required to stabilize the CC current. 2 π V OUT C OUT f SW 10 G EA G COMP × 0 . 808 V (12) Output Cable Resistance Compensation STEP 2. Set the zero fZ1 at 1/4 of the cross over frequency. If RCOMP is less than 15kΩ, the equation for CCOMP is: To compensate for resistive voltage drop across the charger's output cable, the ACT4533C integrates a simple, user-programmable cable voltage drop compensation using the impedance at the FB pin. Use the curve in Figure 6 to choose the proper feedback resistance values for cable compensation. RFB1 is the high side resistor of voltage divider. = 5 . 12 × 10 7 VOUT C OUT C COMP = 2 . 83 × 10 R COMP Innovative PowerTM (Ω) 5 (F) (13) -8- www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT4533C Rev 1, 14-Nov-14 STABILITY COMPENSATION CONT’D In the case of high RFB1 used, the frequency compensation needs to be adjusted correspondingly. As show in Figure 7, adding a capacitor in paralleled with RFB1 or increasing the compensation capacitance at COMP pin helps the system stability. single point for best noise immunity. Connect exposed pad to power ground copper area with copper and vias. 4) Use copper plane for power GND for best heat dissipation and noise immunity. 5) Place feedback resistor close to FB pin. Figure 6: Cable Compensation at Various Resistor Divider Values 6) Use short trace connecting HSB-CHSB-SW loop Figure 8 shows an example of PCB layout. Delta Output Voltage vs. Output Current Delta Output Voltage (mV) 400 350 =3 1 300 R FB 250 R FB 1 200 R FB1 150 R FB1 100 =2 00 40 =2 k ACT4533C-003 450 k 00k = 15 0k RFB1 = 100k 50 RFB1 = 51k 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 Output Current (A) Figure 7: Frequency Compensation for High RFB1 VOUT RFB1 Comp 1nF FB RFB2 RCOMP CCOMP CFFD CCOMP2 Figure 8: PCB Layout Figure 9 gives one typical car charger application schematic and associated BOM list. PC Board Layout Guidance When laying out the printed circuit board, the following checklist should be used to ensure proper operation of the IC. 1) Arrange the power components to reduce the AC loop size consisting of CIN, IN pin, SW pin and the schottky diode. 2) Place input decoupling ceramic capacitor CIN as close to IN pin as possible. CIN is connected power GND with vias or short and wide path. 3) Return FB, COMP and ISET to signal GND pin, and connect the signal GND to power GND at a Innovative PowerTM -9- www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT4533C Rev 1, 14-Nov-14 Figure 9: Typical Application Circuit for 5V/2.4A Car Charger with OVP Circuit Table 2: BOM List for 5V/2.4A Car Charger ITEM REFERENCE DESCRIPTION MANUFACTURER QTY 1 U1 IC, ACT4533CYH, SOP-8EP Active-Semi 1 2 C1 Capacitor, Electrolytic, 47µF/50V, 6.3х7mm Murata, TDK 1 3 C2 Capacitor, Ceramic, 10µF/50V, 1206, SMD Murata, TDK 1 4 C3 Capacitor, Ceramic, 2.2nF/25V, 0603, SMD Murata, TDK 1 5 C4 Capacitor, Ceramic, 22nF/50V, 1206, SMD Murata, TDK 1 6 C5 Capacitor, Ceramic, 1nF/25V, 0603, SMD Murata, TDK 1 7 C6 Capacitor, Ceramic, 10µF/10V, 0603, SMD Murata, TDK 1 8 C7 Capacitor, Electrolytic, 220uF/10V, 6.3х7mm Murata, TDK 1 9 L1 Inductor, 40µH, 3.5A, 20%, DIP Sunlord 1 10 D1 Diode, Schottky, 40V/5A, SK54BL Diodes 1 11 R1 Chip Resistor, 7.87kΩ, 0603, 1% Murata, TDK 1 12 R2 Chip Resistor, 51kΩ, 0603, 1% Murata, TDK 1 13 R3 Chip Resistor, 15kΩ, 0603, 5% Murata, TDK 1 14 R4 Chip Resistor, 9.76kΩ, 0603, 1% Murata, TDK 1 15 R5 Chip Resistor, 100kΩ, 0603, 1% Murata, TDK 1 16 R6 Chip Resistor, 15kΩ, 0603, 1% Murata, TDK 1 Innovative PowerTM - 10 - www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT4533C Rev 1, 14-Nov-14 Figure 10: Typical Application Circuit for 12V/2.4A Car Charger with OVP Circuit Table 3: BOM List for 12V/2.4A Car Charger ITEM REFERENCE DESCRIPTION MANUFACTURER QTY 1 U1 IC, ACT4533CYH, SOP-8EP Active-Semi 1 2 C1 Capacitor, Electrolytic, 47µF/50V, 6.3х7mm Murata, TDK 1 3 C2 Capacitor, Ceramic, 10µF/50V, 1206, SMD Murata, TDK 1 4 C3 Capacitor, Ceramic, 2.2nF/25V, 0603, SMD Murata, TDK 1 5 C4 Capacitor, Ceramic, 22nF/50V, 1206, SMD Murata, TDK 1 6 C5 Capacitor, Ceramic, 1nF/25V, 0603, SMD Murata, TDK 1 7 C6 Capacitor, Ceramic, 10µF/16V, 0603, SMD Murata, TDK 1 8 C7 Capacitor, Electrolytic, 220uF/16V, 6.3х7mm Murata, TDK 1 9 L1 Inductor, 66µH, 3.5A, 20%, DIP Sunlord 1 10 D1 Diode, Schottky, 40V/5A, SK54BL Diodes 1 11 R1 Chip Resistor, 7.87kΩ, 0603, 1% Murata, TDK 1 12 R2 Chip Resistor, 160kΩ, 0603, 1% Murata, TDK 1 13 R3 Chip Resistor, 15kΩ, 0603, 5% Murata, TDK 1 14 R4,R6 Chip Resistor, 11.5kΩ, 0603, 1% Murata, TDK 2 15 R5 Chip Resistor, 200kΩ, 0603, 1% Murata, TDK 1 Innovative PowerTM - 11 - www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT4533C Rev 1, 14-Nov-14 TYPICAL PERFORMANCE CHARACTERISTICS (Schematic as shown in Figure 9, Ta = 25°C, unless otherwise specified) Efficiency vs. Load current Switching Frequency vs. Input Voltage ACT4533C-004 100 85 VIN =18V Switching Frequency (kHz) Efficiency (%) 90 VIN =24V 80 75 70 65 VOUT = 5V 60 140 135 130 125 120 115 110 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 10 3.6 15 20 30 35 Input Voltage (V) Switching Frequency vs. Feedback Voltage CC Current vs. Temperature CC Current (mA) 90 60 30 40 ACT4533C-007 ACT4533C-006 120 2780 VOUT = 5V VIN = 12V IISET = 2.65A 2740 2700 2660 2620 0 0 100 200 300 400 500 600 700 800 2580 900 10 -20 40 CC Current vs. Input Voltage Maximum CC Current (A) 9.0 2750 2700 2650 20 25 30 35 8.0 7.0 6.0 5.0 4.0 3.0 10 40 Input Voltage (V) Innovative PowerTM 130 ACT4533C-009 ACT4533C-008 2800 15 100 Maximum Peak Current vs. Duty Cycle 2850 2660 10 70 Temperature (°C) Feedback Voltage (mV) CC Current (mA) 25 Load Current (A) 150 Switching Frequency (kHz) ACT4533C-005 VIN =12V 95 145 20 30 40 50 60 70 80 90 Duty Cycle - 12 - www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT4533C Rev 1, 14-Nov-14 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (Schematic as shown in Figure 9, Ta = 25°C, unless otherwise specified) Standby Current vs. Input Voltage (FB=1V) Feedback Voltage vs. Input Voltage 0.818 Standby Supply Current (mA) Shutdown Current (µA) 1060 1020 980 940 900 8 12 16 20 24 28 32 36 ACT4533C-011 ACT4533C-010 1100 0.815 0.812 0.809 0.806 0.803 0.800 40 8 12 16 24 28 32 36 40 Input Voltage (V) Input Voltage (V) Reverse Leakage Current (VIN Floating) Start up into CC mode 120 ACT4533C-013 ACT4533C-012 160 Reverse Leakage Current (µA) 20 VOUT = 5V RLORD = 1.5Ω IISET = 2.65A VIN = 12V 80 CH1 40 CH2 0 0 1 2 3 4 5 CH1: VOUT, 2V/div CH2: IOUT, 1A/div TIME: 400µs/div VOUT (V) Start up into CC mode ACT4533C-015 ACT4533C-014 VOUT = 5V RLORD = 1.5Ω IISET = 2.65A VIN = 24V SW vs. Output Voltage Ripples VIN = 12V VOUT = 5V IOUT = 2.4A CH1 CH1 CH2 CH2 CH1: VOUT Ripple, 20mV/div CH2: SW, 10V/div TIME: 4µs/div CH1: VOUT, 2V/div CH2: IOUT, 1A/div TIME: 400µs/div Innovative PowerTM - 13 - www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT4533C Rev 1, 14-Nov-14 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (Schematic as shown in Figure 9, Ta = 25°C, unless otherwise specified) SW vs. Output Voltage Ripple Start up with VIN ACT4533C-017 ACT4533C-016 VIN = 24V VOUT = 5V IOUT = 2.4A VIN = 12V VOUT = 5V IOUT = 2.4A CH1 CH1 CH2 CH2 CH1: VIN, 5V/div CH2: VOUT, 2V/div TIME: 400µs//div CH1: VRIPPLE, 50mV/div CH2: SW, 10V/div TIME: 4µs/div Load transient (80mA-1A-80mA) Start up with VIN VIN = 12V VOUT = 5V IISET = 2.65A ACT4533C-019 ACT4533C-018 VIN = 24V VOUT = 5V IOUT = 2.4A CH1 CH1 CH2 CH2 CH1: VIN, 10V/div CH2: VOUT, 2V/div TIME: 400µs//div CH1: VOUT, 50mV/div CH2: IOUT, 1A/div TIME: 400µs//div Output Short test Load transient (1A-2.4A-1A) VIN = 12V VOUT = 5V IISET = 2.65A CH1 ACT4533C-021 CH1 ACT4533C-020 24V VVININ==24V 5V OUT==5V VVOUT = 2.65A I ISET IISET = 2.65A CH2 CH2 CH1: VOUT, 100mV/div CH2: IOUT, 1A/div TIME: 400µs//div Innovative PowerTM CH1: VOUT, 2V/div CH2: IL, 1A/div TIME: 100µs//div - 14 - www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT4533C Rev 1, 14-Nov-14 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (Schematic as shown in Figure 9, Ta = 25°C, unless otherwise specified) Output Short test Output Short Recovery ACT4533C-023 ACT4533C-022 VIN = 24V VOUT = 5V IISET = 2.65A CH1 VIN = 12V VOUT = 5V IISET = 2.65A CH1 CH2 CH2 CH1: VOUT, 2V/div CH2: IL, 1A/div TIME: 400µs//div CH1: VOUT, 2V/div CH2: IL, 1A/div TIME: 100µs//div Output Short Recovery OVP Test (Start up with FB=0) VIN = 12V VOUT = 5V IISET = 2.65A ACT4533C-025 ACT4533C-024 VIN = 24V VOUT = 5V IISET = 2.65A CH1 CH1 CH2 CH2 CH1: VIN, 5V/div CH2: VOUT, 2V/div TIME: 10ms//div CH1: VOUT, 2V/div CH2: IL, 1A/div TIME: 400µs//div EN/OVP Test ACT4533C-026 CH1 CH2 CH1: VEN/OVP, 1V/div CH2: VOUT, 2V/div TIME: 20ms//div Innovative PowerTM - 15 - www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT4533C Rev 1, 14-Nov-14 PACKAGE OUTLINE SOP-8EP PACKAGE OUTLINE AND DIMENSIONS SYMBOL DIMENSION IN MILLIMETERS DIMENSION IN INCHES MIN MAX MIN MAX A 1.350 1.700 0.053 0.067 A1 0.000 0.100 0.000 0.004 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 D 4.700 5.100 0.185 0.200 D1 3.202 3.402 0.126 0.134 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 E2 2.313 2.513 0.091 0.099 e 1.270 TYP 0.050 TYP L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° Note: 1. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15mm per end. 2. Dimension E does not include interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.25mm per side. Active-Semi, Inc. reserves the right to modify the circuitry or specifications without notice. Users should evaluate each product to make sure that it is suitable for their applications. Active-Semi products are not intended or authorized for use as critical components in life-support devices or systems. Active-Semi, Inc. does not assume any liability arising out of the use of any product or circuit described in this datasheet, nor does it convey any patent license. Active-Semi and its logo are trademarks of Active-Semi, Inc. For more information on this and other products, contact [email protected] or visit http://www.active-semi.com. is a registered trademark of Active-Semi. Innovative PowerTM - 16 - www.active-semi.com Copyright © 2014 Active-Semi, Inc.