Data Sheet Schottky Barrier Diode RB425D Applications Low power rectification Dimensions (Unit : mm) Land size figure (Unit : mm) ＋0.1 2.9±0.2 各リードとも Each lead has same dimension 同寸法 0.4 －0.05 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 1.0MIN. ＋0.2 1.6－0.1 2.8±0.2 0.95 ＋0.1 0.15 －0.06 (3) 0.8MIN. 0～0.1 (1) 0.95 0.8±0.1 0.95 1.1±0.2 0.01 1.9±0.2 SMD3 0.3～0.6 (2) Construction Silicon epitaxial planer 2.4 1.9 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 Io IFSM Tj Tstg 3.2±0.1 5.5±0.2 3.5±0.05 Limits 40 40 100 1 125 40 to 125 Symbol VRM VR 0～0.5 3.2±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature φ1.05MIN 4.0±0.1 3.2±0.1 8.0±0.2 1.75±0.1 4.0±0.1 1.35±0.1 Unit V V mA A °C °C (*1) Rating of per diode：Io/2 Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Conditions Symbol VF 1 VF 2 IR1 Min. Typ. Max. Unit - - 0.55 0.34 30 V V μA IF=100mA IF=10mA VR=10V Ct1 - 6 - pF VR=10V , f=1MHz 1/3 2011.04 - Rev.B Data Sheet RB425D 10000 REVERSE CURRENT:IR(uA) Ta=75℃ 1 Ta=25℃ Ta=-25℃ 0.1 0.01 0 100 200 300 400 500 1000 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 450 440 430 300 290 280 270 AVE:281.5mV 260 420 7 6 5 AVE:6.09pF 4 3 2 1 1cyc Ifsm 15 8.3ms 10 5 AVE:5.50A Ct DISPERSION MAP 10 AVE:2.548uA 5 20 15 10 5 AVE:6.20ns 0 trr DISPERSION MAP 15 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 5 0 1000 Ifsm t 10 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 IFSM DISPERSION MAP 15 0.1 15 30 0 0 10 20 IR DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 8 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ f=1MHz VR=10V n=10pcs 9 Ta=25℃ VR=10V n=10pcs 0 20 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 30 25 VF DISPERSION MAP VF DISPERSION MAP 20 30 REVERSE CURRENT:IR(uA) 460 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ IF=10mA n=30pcs D2 AVE:439.5mV CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 35 310 Ta=25℃ IF=100mA n=30pcs D1 FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 470 10 1 0.01 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD CURRENT:IF(mA) 10 100 Ta=125℃ Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 2/3 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=1mA 10 1ms IF=10mA time 300us 1 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 2011.04 - Rev.B Data Sheet RB425D 0.07 Per chip 0.06 DC REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.08 D=1/2 0.06 Sin(θ＝180) 0.04 0.3 Per chip Per chip AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.1 0.05 0.04 Sin(θ＝180) 0.03 D=1/2 DC 0.02 0.02 0.01 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 0A 0V 0.25 0.2 Io t DC T VR D=t/T VR=15V Tj=125℃ 0.15 D=1/2 0.1 0.05 Sin(θ＝180) 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Per chip 0A 0V 0.25 0.2 Io t DC T 0.15 VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 0.05 Sin(θ＝180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A